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31. 发明授权

US09490228B2 Anisotropic conductive film including conductive adhesive layer and semiconductor device connected by the same 有权
标题翻译：各向异性导电膜包括导电粘合剂层和与其相连的半导体器件
公开(公告)号：US09490228B2
公开(公告)日：2016-11-08
申请号：US14229003
申请日：2014-03-28
申请人： Kyoung Soo Park , Soon Young Kwon , Ji Yeon Kim , Young Woo Park , Jae Sun Han , Ja Young Hwang
发明人： Kyoung Soo Park , Soon Young Kwon , Ji Yeon Kim , Young Woo Park , Jae Sun Han , Ja Young Hwang
IPC分类号： H01L23/00 , C09J9/02 , C09J7/00 , C09J11/00 , H05K3/32 , C08K7/16 , C08K9/02
CPC分类号： H01L24/29 , C08K7/16 , C08K9/02 , C09J7/00 , C09J7/10 , C09J9/02 , C09J11/00 , C09J2201/36 , C09J2201/602 , C09J2203/326 , C09J2205/102 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/13013 , H01L2224/16225 , H01L2224/27003 , H01L2224/271 , H01L2224/29082 , H01L2224/29083 , H01L2224/2919 , H01L2224/2929 , H01L2224/29311 , H01L2224/29316 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29366 , H01L2224/29371 , H01L2224/29387 , H01L2224/2939 , H01L2224/29411 , H01L2224/29416 , H01L2224/29424 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/29464 , H01L2224/29466 , H01L2224/29471 , H01L2224/29499 , H01L2224/32225 , H01L2224/81191 , H01L2224/81903 , H01L2224/83192 , H01L2224/83203 , H01L2224/83851 , H01L2924/07802 , H01L2924/15788 , H05K3/323 , Y10T428/24959 , Y10T428/25 , Y10T428/28 , Y10T428/2848 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×105/d2 to 10.0×105/d2 (particles) per square millimeter (mm2) (where d is a diameter of the conductive particles in μm).
摘要翻译：各向异性导电膜包括导电性粘合剂层，其包含导电性粒子和绝缘性粒子，以及不含导电性粒子的绝缘性粘合剂层。在各向异性导电膜中，导电性粘接剂层的导电性粒子和绝缘性粒子的总粒子密度为7.0×10 5 / d 2〜10 10×10 6（粒子）/平方毫米（mm 2）（d为直径的导电粒子）。

32. 发明授权

US09431415B2 Semiconductor device with vertical memory 有权
标题翻译：具有垂直存储器的半导体器件
公开(公告)号：US09431415B2
公开(公告)日：2016-08-30
申请号：US14534352
申请日：2014-11-06
申请人： Yoo-cheol Shin , Young-woo Park , Jae-duk Lee
发明人： Yoo-cheol Shin , Young-woo Park , Jae-duk Lee
IPC分类号： H01L27/115 , H01L29/66 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11578 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
摘要翻译：半导体器件包括：衬底上的外围电路区域，外围电路区域上的多晶硅层，多晶硅层上的存储单元阵列区域，与外围电路区域重叠，外围电路区域在存储单元阵列区域的下方，存储单元阵列区域上的上互连层，以及通过存储单元阵列区域和多晶硅层的垂直接触，垂直接触将上互连层连接到外围电路区域。

33. 发明申请

US20160093637A1 METHOD OF FABRICATING MEMORY DEVICE 有权
标题翻译：制造存储器件的方法
公开(公告)号：US20160093637A1
公开(公告)日：2016-03-31
申请号：US14832285
申请日：2015-08-21
申请人： Jae-goo LEE , Young-woo PARK
发明人： Jae-goo LEE , Young-woo PARK
IPC分类号： H01L27/115 , H01L21/28 , H01L21/311
CPC分类号： H01L27/11582 , H01L21/28282 , H01L27/11575
摘要： A method of fabricating a memory device includes alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on a substrate, forming a channel hole by etching the insulating layers and the sacrificial layers to expose a partial region of the substrate, forming a channel structure in the channel hole, forming an opening by etching the insulating layers and the sacrificial layers to exposed a portion of the substrate, forming a plurality of side openings that include first side openings and a second side opening by removing the sacrificial layers through the opening, forming gate electrodes to fill the first side openings, and forming a blocking layer to fill the second side opening.
摘要翻译：一种制造存储器件的方法包括在衬底上交替堆叠多个绝缘层和多个牺牲层，通过蚀刻绝缘层和牺牲层形成通道孔，以暴露衬底的部分区域，形成通道通道孔中的结构，通过蚀刻绝缘层和牺牲层形成开口以暴露基板的一部分，通过开口去除牺牲层，形成包括第一侧开口和第二侧开口的多个侧开口形成栅电极以填充第一侧开口，以及形成阻挡层以填充第二侧开口。

34. 发明申请

US20150372101A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150372101A1
公开(公告)日：2015-12-24
申请号：US14662919
申请日：2015-03-19
申请人： Jae Goo LEE , Young Woo PARK
发明人： Jae Goo LEE , Young Woo PARK
IPC分类号： H01L29/417 , H01L29/423 , H01L27/115 , H01L29/49 , H01L29/788 , H01L29/792 , H01L23/528
CPC分类号： H01L27/11556 , H01L27/11519 , H01L27/11548 , H01L27/11565 , H01L27/11575 , H01L27/11582 , H01L29/4975 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device including a substrate, channels, a gate stack, and a pad separating region. The substrate has a pad region adjacent to a cell region. The channels extend in a direction crossing an upper surface of the substrate in the cell region. The gate stack includes a plurality of gate electrode layers spaced apart from each other on the substrate and enclosing the channels in the cell region. The pad separating region separates the gate stack into two or more regions in the pad region. The gate electrode layers have different lengths in the pad region.
摘要翻译：一种半导体器件，包括衬底，沟道，栅叠层和衬垫分离区。衬底具有与单元区域相邻的衬垫区域。通道在与单元区域中的基板的上表面交叉的方向上延伸。栅极堆叠包括在衬底上彼此间隔开的多个栅极电极层，并且包围电池区域中的沟道。焊盘分离区域将焊盘区分离成焊盘区域中的两个或更多个区域。栅极电极层在焊盘区域中具有不同的长度。

35. 发明授权

US09200058B2 Dual antagonist for TNF-α and IL-21 for preventing and treating autoimmune diseases 有权
标题翻译：用于预防和治疗自身免疫性疾病的TNF-α和IL-21的双重拮抗剂
公开(公告)号：US09200058B2
公开(公告)日：2015-12-01
申请号：US13635874
申请日：2011-03-18
申请人： Young Woo Park , Ki Won Jo , Srok Ho Yoo , Jung Yu , Sun-Ha Yoon , Ji Hyun Park , Eun Jung Song , Jong-Ho Lee , Min Ji Seo , Sun Jung Cho , Mi La Cho , Ho Youn Kim , Mi Kyung Park , Hye Jwa Oh , Jin Sil Park , Yun Ju Woo , Jae Kyeong Byun , Jun Geol Ryu
发明人： Young Woo Park , Ki Won Jo , Srok Ho Yoo , Jung Yu , Sun-Ha Yoon , Ji Hyun Park , Eun Jung Song , Jong-Ho Lee , Min Ji Seo , Sun Jung Cho , Mi La Cho , Ho Youn Kim , Mi Kyung Park , Hye Jwa Oh , Jin Sil Park , Yun Ju Woo , Jae Kyeong Byun , Jun Geol Ryu
IPC分类号： C07K14/715
CPC分类号： C07K14/7151 , C07K14/7155 , C07K2319/00
摘要： The present invention relates to TNFR2-IL21R fusion protein acting as a double-antagonist to TNF-alpha (α) and IL-21. The composition containing the double antagonist to TNF-α and Il-21 (TNFR2-IL21R fusion protein), known as major causes of autoimmune rheumatoid arthritis, one of autoimmune diseases, can reduce the secretion of inflammatory cytokine, increase the secretion of anti-inflammatory cytokine, and suppress the differentiation of osteoclasts better than single proteins such as TNFR2-Fc and IL21R-Fc. The TNFR2-IL21R fusion protein of the present invention has not only excellent treatment effect on arthritis in CIA mouse model not also excellent treatment effect on autoimmune rheumatoid arthritis by increasing the expression of Treg, the immune suppressive cells. Therefore, the TNFR2-IL21R fusion protein of the present invention can be effectively used as an active ingredient for the composition for the prevention and treatment of autoimmune disease.
摘要翻译：本发明涉及作为TNF-α（α）和IL-21的双重拮抗剂的TNFR2-IL21R融合蛋白。含有TNF-α和II-21（TNFR2-IL21R融合蛋白）的双重拮抗剂的组合物，被称为自身免疫性类风湿性关节炎的主要原因（自身免疫性疾病之一）可以减少炎性细胞因子的分泌，炎性细胞因子，并且比单一蛋白如TNFR2-Fc和IL21R-Fc更好地抑制破骨细胞的分化。本发明的TNFR2-IL21R融合蛋白不仅对CIA小鼠模型的关节炎具有优异的治疗作用，而且通过增加免疫抑制细胞Treg的表达，对自身免疫性类风湿性关节炎也不是很好的治疗效果。因此，本发明的TNFR2-IL21R融合蛋白可以有效地用作预防和治疗自身免疫性疾病的组合物的活性成分。

36. 发明授权

US09150650B2 Human monoclonal antibody neutralizing vascular endothelial growth factor receptor and use thereof 有权
标题翻译：人单克隆抗体中和血管内皮生长因子受体及其用途
公开(公告)号：US09150650B2
公开(公告)日：2015-10-06
申请号：US12664226
申请日：2007-06-26
申请人： Jin-San Yoo , Weon-Sup Lee , Sang-Ryeol Shim , Mi-Hee Park , Jeong-Eun Kang , Do-Yun Kim , Joon Chul Lee , Dong-Heon Lee , Too-Hyon Cho , Sam-Sook Sul , Young-Guen Kwon , Bo-Jeong Pyun , Kwi-Hwa Kim , Chae-Ok Yun , Nahm-Ju Kim , Jae-Won Jeon , Dong-Sup Lee , Young-Woo Park , Geun-Bae Rha , Hyun-Sook Jang , Hyeon-Mi Yoo , Sung-Woo Kim , Se-mi Kim , Sang-Seok Koh
发明人： Jin-San Yoo , Weon-Sup Lee , Sang-Ryeol Shim , Mi-Hee Park , Jeong-Eun Kang , Do-Yun Kim , Joon Chul Lee , Dong-Heon Lee , Too-Hyon Cho , Sam-Sook Sul , Young-Guen Kwon , Bo-Jeong Pyun , Kwi-Hwa Kim , Chae-Ok Yun , Nahm-Ju Kim , Jae-Won Jeon , Dong-Sup Lee , Young-Woo Park , Geun-Bae Rha , Hyun-Sook Jang , Hyeon-Mi Yoo , Sung-Woo Kim , Se-mi Kim , Sang-Seok Koh
IPC分类号： C12P21/08 , C07K16/28 , C07K16/30 , G01N33/574 , A61K39/00
CPC分类号： C07K16/2863 , A61K2039/505 , C07K16/30 , C07K16/3023 , C07K16/3046 , C07K2317/21 , C07K2317/565 , C07K2317/622 , C07K2317/73 , C07K2317/76 , C07K2317/92 , C07K2319/00 , G01N33/574
摘要： The present invention relates to human monoclonal antibodies neutralizing vascular endothelial growth factor receptor and the use thereof. More specifically, relates to human ScFv molecules neutralizing vascular endothelial growth factor receptor, and a composition for inhibiting angiogenesis and a composition for treating cancer, which contain the human ScFv molecules. The disclosed monoclonal antibody neutralizing vascular endothelial growth factor receptor shows excellent neutralizing ability in living cells, compared to that of a commercially available antibody against vascular endothelial growth factor receptor, and shows the ability to neutralize vascular endothelial growth factor receptor not only in humans, but also in mice and rats. Thus, the monoclonal antibody will be useful in anticancer studies and will be highly effective in cancer treatment.
摘要翻译：本发明涉及中和血管内皮生长因子受体的人单克隆抗体及其应用。更具体地，涉及中和血管内皮生长因子受体的人ScFv分子，以及含有人ScFv分子的抑制血管发生的组合物和治疗癌症的组合物。与市售的针对血管内皮生长因子受体的抗体相比，公开的单克隆抗体中和血管内皮生长因子受体显示出优异的活细胞中和能力，并且显示出不仅在人体中中和血管内皮生长因子受体的能力，而且也在老鼠和老鼠。因此，单克隆抗体可用于抗癌研究，并且在癌症治疗中将是非常有效的。

37. 发明授权

US09048240B2 Anisotropic conductive film and electronic device including the same 有权
标题翻译：各向异性导电膜和包括其的电子器件
公开(公告)号：US09048240B2
公开(公告)日：2015-06-02
申请号：US13728215
申请日：2012-12-27
申请人： Young Woo Park , Nam Ju Kim , Kyoung Soo Park , Joon Mo Seo , Kyung Il Sul , Dong Seon Uh , Arum Yu , Hyun Min Choi
发明人： Young Woo Park , Nam Ju Kim , Kyoung Soo Park , Joon Mo Seo , Kyung Il Sul , Dong Seon Uh , Arum Yu , Hyun Min Choi
IPC分类号： H01B1/00 , H01L23/48 , H01L23/538 , C09J9/02 , C08G59/22 , C08G59/24 , H01L23/00 , C08L63/00
CPC分类号： H01L23/538 , C08G59/226 , C08G59/245 , C08K2201/001 , C08K2201/011 , C09J9/02 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L2224/16225 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29366 , H01L2224/29371 , H01L2224/29386 , H01L2224/2939 , H01L2224/29393 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/32225 , H01L2224/73204 , H01L2924/07802 , H01L2924/07811 , H01L2924/15788 , H01L2924/00 , C08L63/00 , C08K3/36 , C08K3/10
摘要： An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.
摘要翻译：电子器件包括各向异性导电膜作为连接材料，各向异性导电膜由各向异性导电膜形成组合物形成。各向异性导电膜形成组合物包括多环芳族环的环氧树脂，芴环氧树脂，纳米二氧化硅和导电颗粒。

38. 发明授权

US09035192B2 Anisotropic conductive adhesive composite and film, and circuit connecting structure including the same 有权
标题翻译：各向异性导电胶复合膜及电路连接结构包括相同
公开(公告)号：US09035192B2
公开(公告)日：2015-05-19
申请号：US12974476
申请日：2010-12-21
申请人： Gyu Ho Lee , Young Woo Park , Il Rae Cho , Young Hun Kim , Kyoung Soo Park , Jin Seong Park , Dong Seon Uh , Kyung Jin Lee , Kwang Jin Jung
发明人： Gyu Ho Lee , Young Woo Park , Il Rae Cho , Young Hun Kim , Kyoung Soo Park , Jin Seong Park , Dong Seon Uh , Kyung Jin Lee , Kwang Jin Jung
IPC分类号： H05K1/09 , C09J11/04 , C09J9/02 , H05K3/32 , C08K3/00 , C08K9/02
CPC分类号： C09J11/04 , C08K3/017 , C08K9/02 , C09J9/02 , H05K3/323 , H05K2201/0218
摘要： An anisotropic conductive adhesive composite and film include a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.
摘要翻译：各向异性导电粘合剂复合物和膜包括粘合剂和分散在粘合剂中的导电颗粒。导电颗粒包括铜芯颗粒和涂覆在相应的铜芯颗粒的表面上的金属涂层。

39. 发明申请

US20150129878A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150129878A1
公开(公告)日：2015-05-14
申请号：US14534352
申请日：2014-11-06
申请人： Yoo-cheol SHIN , Young-woo PARK , Jae-duk LEE
发明人： Yoo-cheol SHIN , Young-woo PARK , Jae-duk LEE
IPC分类号： H01L27/115 , H01L23/532 , H01L29/04 , H01L23/528 , H01L29/16
CPC分类号： H01L27/11578 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
摘要翻译：半导体器件包括：衬底上的外围电路区域，外围电路区域上的多晶硅层，多晶硅层上的存储单元阵列区域，与外围电路区域重叠，外围电路区域在存储单元阵列区域的下方，存储单元阵列区域上的上互连层，以及通过存储单元阵列区域和多晶硅层的垂直接触，垂直接触将上互连层连接到外围电路区域。

40. 发明申请

US20150097222A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150097222A1
公开(公告)日：2015-04-09
申请号：US14505180
申请日：2014-10-02
申请人： Do-hyun Lee , Jae-duk Lee , Young-woo Park , Yung-hwan Son
发明人： Do-hyun Lee , Jae-duk Lee , Young-woo Park , Yung-hwan Son
IPC分类号： H01L27/115
CPC分类号： H01L27/1157 , H01L27/11524 , H01L27/11556 , H01L27/11582 , H01L29/7889 , H01L29/7926
摘要： A semiconductor device is provided. A channel layer is formed on a substrate. The channel layer is extended in a first direction substantially perpendicular to an upper surface of the substrate. A ground selection line is formed on a first region of the channel layer. A plurality of word lines is formed on a second region of the channel layer. A plurality of string selection lines is formed on a third region of the channel layer. The second region of the channel layer includes a first conductivity type dopant. The first, second and third regions of the channel layer are disposed along the first direction.
摘要翻译：提供半导体器件。在衬底上形成通道层。沟道层在基本上垂直于衬底的上表面的第一方向上延伸。地线选择线形成在沟道层的第一区域上。多个字线形成在沟道层的第二区域上。多个串选择线形成在沟道层的第三区域上。沟道层的第二区域包括第一导电型掺杂剂。沟道层的第一，第二和第三区域沿着第一方向设置。

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