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    • 4. 发明授权
    • Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line
    • 通过对所选择的字线施加比毗邻所选字线的字线更高的电压电平来对非易失性闪存器件进行编程的方法
    • US08248853B2
    • 2012-08-21
    • US12590701
    • 2009-11-12
    • Jae Duk LeeSoon Moon JungJung Dal Choi
    • Jae Duk LeeSoon Moon JungJung Dal Choi
    • G11C11/34
    • G11C16/10G11C11/5628G11C16/0483G11C16/3418G11C16/3427
    • In a method of programming a non-volatile memory device, a first voltage is applied to a selected word line corresponding to a selected memory cell transistor of a selected transistor string to be programmed; a second voltage is applied to a neighboring word line neighboring the selected word line and corresponding to a neighboring transistor of the selected transistor string, wherein the first voltage is greater than the second voltage, the application of the first and second voltages to the selected and neighboring word lines respectively causing electrons to be generated by an electric field formed between the neighboring transistor and the selected memory cell transistor, the electrons accelerating toward the selected memory cell transistor and injecting into a charge storage layer of the selected memory cell transistor; wherein the neighboring transistor is positioned between the selected memory cell transistor and one of a ground select transistor and a string select transistor, and the first voltage is applied to unselected word lines corresponding to unselected memory cell transistors of the selected transistor string positioned between the selected memory cell transistor and the other of the ground select transistor and the string select transistor.
    • 在编程非易失性存储器件的方法中,将第一电压施加到对应于要编程的所选择的晶体管串的选定存储单元晶体管的选定字线; 第二电压被施加到与所选择的字线相邻并且对应于所选择的晶体管串的相邻晶体管的相邻字线,其中第一电压大于第二电压,将第一和第二电压施加到所选择的和 分别使相邻的晶体管与所选择的存储单元晶体管之间形成的电场产生电子的相邻字线,电子向所选择的存储单元晶体管加速并注入到所选存储单元晶体管的电荷存储层中; 其中所述相邻晶体管位于所选择的存储单元晶体管和接地选择晶体管和串选择晶体管中的一个之间,并且所述第一电压被施加到对应于所选择的晶体管串的未选择存储单元晶体管的未选择字线, 存储单元晶体管和另一个接地选择晶体管和串选择晶体管。
    • 5. 发明申请
    • MANHOLE COVER
    • 男子封面
    • US20110268501A1
    • 2011-11-03
    • US13143085
    • 2009-12-29
    • Jae Duk Lee
    • Jae Duk Lee
    • E02D29/14
    • E02D29/14
    • The present invention relates to a manhole cover which has an upper body and a lower body coupled to each other to maintain balance, to endure loads applied from an external source in a stable manner, to protect the inside of the manhole from the ingress of rainwater, and to enable the upper body to be stably fixed inside the lower body. To accomplish the above-described aim, the key technical features of the present invention relate to a manhole cover, comprising: a lower body, the inside of which is hollow, with a spiral rib formed along the inner surface of the hollow space, and a convex-concave portion formed on the upper surface of the spiral rib; an upper body which is coupled inside the lower body, and the inside of which is hollow, with a spiral rib and a convex-concave portion formed along the outer surface thereof to correspond to the spiral rib and the convex-concave portion of the lower body, and a stepped portion formed at the upper surface thereof; a cover mounted in the stepped portion of the upper body to protect the inside of the upper body from the introduction of foreign objects; and a waterproofing means removably arranged inside the upper body to protect the inside of the manhole from the ingress of rainwater.
    • 本发明涉及一种人孔盖,其具有彼此联接以保持平衡的上主体和下体,以稳定地承受从外部源施加的载荷,以保护人孔内部免受雨水的侵入 并且能够使上身稳定地固定在下身内。 为了实现上述目的,本发明的关键技术特征涉及一种人孔盖,包括:下体,其内部为中空,沿着中空空间的内表面形成螺旋肋,以及 形成在所述螺旋肋的上表面上的凸凹部; 上体,其联接在下体内部,其内部为中空的,具有沿其外表面形成的螺旋肋和凸凹部,以对应于螺旋肋和下部的凸凹部 主体和形成在其上表面的台阶部分; 安装在上身的阶梯部分中的盖子,用于保护上身的内部不引入异物; 以及可拆卸地布置在上身内部的防水装置,以保护人孔内部免受雨水的侵入。