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31. 发明申请

US20050078143A1 Ink jet head and ink jet printing apparatus having the head 有权
标题翻译：具有头部的喷墨头和喷墨打印设备
公开(公告)号：US20050078143A1
公开(公告)日：2005-04-14
申请号：US10957686
申请日：2004-10-05
申请人： Masako Shimomura , Tadayoshi Inamoto , Kazunari Ishizuka , Ryoichiro Kurobe , Yohei Sato , Akihiko Shimomura , Isao Imamura
发明人： Masako Shimomura , Tadayoshi Inamoto , Kazunari Ishizuka , Ryoichiro Kurobe , Yohei Sato , Akihiko Shimomura , Isao Imamura
IPC分类号： B41J2/14 , B41J2/16 , B41J2/015
CPC分类号： B41J2/1603 , B41J2/14024 , B41J2/14072 , B41J2/1623 , B41J2/1629
摘要： An ink jet head has a head substrate including discharge elements for discharging ink, with an electric wiring board being electrically connected to the head substrate, in which the periphery of the head substrate is sealed with a first sealant, and an electric splice between the head substrate and the electric wiring board is sealed with a second sealant. The first and second sealants contain the same base resin and curing agent, and the second sealant shows higher hardness than the first sealant after curing. This ink jet head is free from problems such as cavities and fissures at the boundary of the two sealants caused by a difference in linear expansion coefficients.
摘要翻译：喷墨头具有包括用于排出墨水的排出元件的头基板，其中电接线板与头基板电连接，其中头基板的周边用第一密封剂密封，以及在头部之间的电接头基板和电布线板用第二密封剂密封。第一和第二密封剂含有相同的基础树脂和固化剂，并且第二密封剂在固化后显示比第一密封剂更高的硬度。该喷墨头在线性膨胀系数的差异下，在两个密封剂的边界处没有诸如空腔和裂缝的问题。

32. 发明授权

US5500663A Recording ink container with an air vent valve 失效
标题翻译：用排气阀记录油墨容器
公开(公告)号：US5500663A
公开(公告)日：1996-03-19
申请号：US20412
申请日：1993-02-22
申请人： Toshihiko Ujita , Kazuhiro Nakajima , Yohei Sato , Shuichi Murakami
发明人： Toshihiko Ujita , Kazuhiro Nakajima , Yohei Sato , Shuichi Murakami
IPC分类号： B41J2/175
CPC分类号： B41J2/17596 , Y10T137/7772 , Y10T137/7894
摘要： A recording ink container having an air vent valve including a supporting means with a first opening, a first thin film with a second opening for covering the first opening, a second thin film for covering the second opening, and sealing means between the thin films. The valve functions to release air from the container through the first opening, and to permit the introduction of air into the container through the second opening with pressures of predetermined levels.
摘要翻译：一种具有排气阀的记录油墨容器，包括具有第一开口的支撑装置，具有用于覆盖第一开口的第二开口的第一薄膜，用于覆盖第二开口的第二薄膜和薄膜之间的密封装置。该阀用于通过第一开口从容器中释放空气，并允许通过具有预定水平的压力的第二开口将空气引入容器。

33. 发明授权

US10199240B2 Substrate processing method, substrate processing apparatus, and storage medium 有权
公开(公告)号：US10199240B2
公开(公告)日：2019-02-05
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

34. 发明授权

US08592781B2 Method and apparatus for quantitative evaluation of wall zeta-potential, and method and apparatus for quantitative visualization of surface modification pattern 有权
标题翻译：壁ζ电位定量评估方法和装置，以及表面修饰图案定量可视化的方法和装置
公开(公告)号：US08592781B2
公开(公告)日：2013-11-26
申请号：US13120041
申请日：2009-09-25
申请人： Yohei Sato , Yutaka Kazoe , Shu Miyakawa
发明人： Yohei Sato , Yutaka Kazoe , Shu Miyakawa
IPC分类号： G01N21/64
CPC分类号： G01N21/648 , G01K11/20 , G01K2213/00 , G01N2021/6421
摘要： A first and a second fluorescent dye are mixed into a solution, the first dye being positively ionized in the solution and the second dye being negatively ionized in the solution and having different fluorescence wavelengths from the first dye. The solution is flown onto a measured surface, and the surface is excited with an evanescent wave to produce a fluorescence intensity distribution of two colors. A fluorescence intensity of the surface is measured using a two-dimensional imaging element, the element providing a fluorescence intensity of each color separated from the other colors, thereby calculating a ratio of the fluorescence intensities of the colors. Using an equation expressing a relationship between the ratio of fluorescence intensities and a wall zeta potential, the ratio is converted to a two-dimensional distribution of wall zeta potentials. This achieves visualizing in real time and quantitatively evaluating the two-dimensional distribution of wall zeta potentials, and surface modifications.
摘要翻译：将第一和第二荧光染料混合到溶液中，第一染料在溶液中被正离子化，第二染料在溶液中被负电离并具有与第一染料不同的荧光波长。将溶液流到测量的表面上，并用ev逝波激发表面以产生两种颜色的荧光强度分布。使用二维成像元件测量表面的荧光强度，所述二维成像元件提供与其它颜色分离的每种颜色的荧光强度，由此计算颜色的荧光强度的比率。使用表示荧光强度比和壁ζ电位之间关系的方程，将该比率转化为壁ζ电位的二维分布。这实现了实时可视化，并定量评估了壁ζ电位的二维分布和表面修饰。

35. 发明申请

US20130019905A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS 有权
标题翻译：半导体基板和超临界干燥装置的超临界干燥方法
公开(公告)号：US20130019905A1
公开(公告)日：2013-01-24
申请号：US13420870
申请日：2012-03-15
申请人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B3/10 , F26B3/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

36. 发明申请

US20120304485A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理方法，基板处理装置和存储介质
公开(公告)号：US20120304485A1
公开(公告)日：2012-12-06
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： F26B7/00
CPC分类号： H01L21/67028 , B08B7/0021 , H01L21/02057 , H01L21/02101
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
摘要翻译：一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷，将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。

37. 发明申请

US20120247516A1 SUPERCRITICAL DRYING METHOD AND APPARATUS FOR SEMICONDUCTOR SUBSTRATES 有权
标题翻译：超临界干燥方法和半导体基板的设备
公开(公告)号：US20120247516A1
公开(公告)日：2012-10-04
申请号：US13369970
申请日：2012-02-09
申请人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
发明人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
IPC分类号： B08B3/00 , F26B25/14 , F26B25/06
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译：根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。房间包含SUS。对室的内壁面进行电解抛光。

38. 发明申请

US20120240426A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20120240426A1
公开(公告)日：2012-09-27
申请号：US13231956
申请日：2011-09-13
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
IPC分类号： F26B7/00 , F26B21/14
CPC分类号： H01L21/02101 , H01L21/02068 , H01L21/67017 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
摘要翻译：根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中，在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力房间。预定温度不低于75℃，但低于醇的临界温度。

39. 发明申请

US20120118332A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20120118332A1
公开(公告)日：2012-05-17
申请号：US13052232
申请日：2011-03-21
申请人： Yohei SATO , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
发明人： Yohei SATO , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
IPC分类号： B08B3/10 , B08B7/00
CPC分类号： H01L21/67034
摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.
摘要翻译：在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中用水溶性有机溶剂润湿。然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

40. 发明申请

US20120074974A1 Test Unit and Test System 审中-公开
标题翻译：测试单元和测试系统
公开(公告)号：US20120074974A1
公开(公告)日：2012-03-29
申请号：US13375588
申请日：2010-05-27
申请人： Yohei Sato , Kenichi Kataoka
发明人： Yohei Sato , Kenichi Kataoka
IPC分类号： G01R1/04 , G01R1/067
CPC分类号： G01R31/2887 , G01R31/3025 , H01L2924/0002 , H01L2924/00
摘要： A test unit to be used with a tester that tests an electrical characteristic of a circuit formed in a wafer includes a tester a board electrically connected to the tester; a first wireless port mounted on a lower surface of the tester board and electrically connected to the tester; a probe board that includes a probe to be in contact with an electrode pad of the electronic circuit, and is configured so that the probe board may be transferred along with the wafer into the system box while the probe and the electrode pad are in contact with each other; a second wireless port that is mounted on an upper surface of the probe board and electrically connected to the probe, and carries out contactless transmission/reception with the first wireless port; a chuck plate that is away from the tester board, and holds the probe board and the wafer; and a flexible expandable chamber that may be inflated by introducing gas thereinto.
摘要翻译：与测试晶片中形成的电路的电特性的测试器一起使用的测试单元包括：测试器，电连接到测试器; 安装在测试器板的下表面上并电连接到测试器的第一无线端口; 探针板，其包括与电子电路的电极焊盘接触的探针，并且被构造成使得探针板可以与晶片一起转移到系统箱中，同时探针和电极焊盘与彼此; 第二无线端口，其安装在所述探针板的上表面上并电连接到所述探针，并且与所述第一无线端口执行非接触式发送/接收; 离开测试器板的夹盘，并保持探针板和晶片; 以及可以通过将气体引入其而膨胀的柔性可膨胀室。

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