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31. 发明申请

US20130063800A1 MIRROR DRIVING APPARATUS, METHOD OF DRIVING SAME AND METHOD OF MANUFACTURING SAME 有权
标题翻译：反射器驱动装置，其驱动方法及其制造方法
公开(公告)号：US20130063800A1
公开(公告)日：2013-03-14
申请号：US13608901
申请日：2012-09-10
申请人： Takayuki NAONO
发明人： Takayuki NAONO
IPC分类号： G02B26/10 , H01L21/02
CPC分类号： G02B26/0858 , G02B26/08
摘要： An aspect of the present invention provides a mirror driving apparatus, including: a mirror section having a reflecting surface which reflects light; a pair of piezoelectric actuator sections arranged on either side of the mirror section; coupling sections which respectively connect one end of each of the piezoelectric actuator sections to an end portion of the mirror section which is distant from an axis of rotation of the mirror section in a direction along the reflecting surface and perpendicular to the axis of rotation; a fixing section which supports another end of each of the piezoelectric actuator sections; and a perpendicular movement suppressing structure which suppresses translational motion of the axis of rotation of the mirror section in a direction perpendicular to the reflecting surface, one end of the perpendicular movement suppressing structure being connected to the fixing section and another end thereof being connected to the mirror section.
摘要翻译：本发明的一个方面提供了一种镜驱动装置，包括：具有反射光的反射面的镜部; 布置在镜部分两侧的一对压电致动器部分; 耦合部分分别将每个压电致动器部分的一端连接到反射镜部分的沿着反射表面的方向并且垂直于旋转轴线的方向远离镜部分的旋转轴线的端部; 固定部分，其支撑每个压电致动器部分的另一端; 以及垂直移动抑制结构，其抑制所述镜部的旋转轴线在与所述反射面垂直的方向上的平移运动，所述垂直移动抑制结构的一端与所述固定部连接，所述垂直移动抑制结构的另一端与镜面部分。

32. 发明申请

US20110316937A1 PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID EJECTION APPARATUS 有权
标题翻译：压电薄膜，压电装置和液体喷射装置
公开(公告)号：US20110316937A1
公开(公告)日：2011-12-29
申请号：US13168302
申请日：2011-06-24
申请人： Takami ARAKAWA , Takayuki Naono , Takamichi Fujii
发明人： Takami ARAKAWA , Takayuki Naono , Takamichi Fujii
IPC分类号： B41J2/045 , C04B35/491
CPC分类号： H01L41/1876 , B41J2/14233 , B41J2202/03 , C04B35/493 , C04B2235/3255 , C04B2235/3298 , C04B2235/768 , C04B2235/79 , H01L41/0805 , H01L41/0973 , H01L41/316
摘要： A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTil-c)l-dBd]Oe, (P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a
摘要翻译：压电膜具有由多个柱状晶体构成的柱状晶体结构，并含有下述式（P）表示的钙钛矿氧化物作为主要成分：PbaAb [（ZrcTil-c）l-dBd] Oe，（P）其中Pb和A是A位元素，A是选自Bi，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb中的至少一种元素，Lu，Ca，Sr和Ba; Zr，Ti和B是B位元素，B是选自Nb，Ta和Sb中的至少一种元素; a是铅的量，b是元素A的量，c是Zr / Ti比，d是元素B的量，e是氧的量; a，b和d的值满足<1，a +b≥1，0

33. 发明授权

US07816842B2 Patterned inorganic film formed of an inorganic material on a metal film having a surface which includes a plurality of surface-oxidized areas, piezoelectric device having the patterned inorganic film, and process for producing the inorganic film 有权
标题翻译：在具有多个表面氧化区域的表面的金属膜上由无机材料形成的图案化无机膜，具有图案化无机膜的压电装置，以及制造无机膜的方法
公开(公告)号：US07816842B2
公开(公告)日：2010-10-19
申请号：US12054996
申请日：2008-03-25
申请人： Takayuki Naono , Takamichi Fujii
发明人： Takayuki Naono , Takamichi Fujii
IPC分类号： H01L41/187 , H01L41/16
CPC分类号： B41J2/161 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1646 , B41J2202/21 , H01L41/0973 , H01L41/1876 , H01L41/316 , H01L41/332 , Y10T29/42 , Y10T29/49128 , Y10T29/49155 , Y10T428/24917
摘要： An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas.
摘要翻译：由具有包含表面氧化区域的表面的金属膜上的由无机材料形成的无机膜。表面氧化区域被表面氧化到不同程度。例如，表面氧化区域是一个或多个低表面氧化区域和一个或多个高表面氧化区域。无机膜包括分别形成在表面氧化区域上的区域，并且该区域根据不同程度的表面氧化具有不同的晶体结构。例如，可以通过除去在高表面氧化的表面上形成的无机膜的部分来制造由布置在金属膜的表面的一个或多个低表面氧化区域上的一个或多个突出部分构成的图案化无机膜地区

34. 发明申请

US20100214369A1 Piezoelectric film, method for forming piezoelectric film, piezoelectric device and liquid discharge device 有权
标题翻译：压电薄膜，压电薄膜的形成方法，压电元件和液体排出装置
公开(公告)号：US20100214369A1
公开(公告)日：2010-08-26
申请号：US12656737
申请日：2010-02-16
申请人： Takayuki Naono , Yoshiki Morita , Yoshikazu Hishinuma , Takamichi Fujii
发明人： Takayuki Naono , Yoshiki Morita , Yoshikazu Hishinuma , Takamichi Fujii
IPC分类号： H01L41/18 , B41J2/045 , H01L41/22 , B32B3/02 , C23C16/513 , C23C14/34
CPC分类号： H01L41/316 , B41J2/14233 , B41J2/161 , B41J2/1642 , B41J2/1646 , H01L41/0805 , H01L41/0973 , H01L41/1876
摘要： A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d31 greater than 150 pC/N and a breakdown voltage of 80 V or more, which is defined by an applied voltage that results in a current value of 1 μA or more.
摘要翻译：本发明的压电膜的表面粗糙度值PV为170.0nm以下，由膜表面上的最大高度（峰值P）与最小高度（谷值V）之间的差定义，压电常数d31大于150pC / N，击穿电压为80V以上，其由施加的电压定义，导致电流值为1μA以上。

35. 发明申请

US20100123368A1 FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER 有权
标题翻译：膜形成方法，膜形成装置，压电膜，压电装置，液体放电装置和压电超声波传感器
公开(公告)号：US20100123368A1
公开(公告)日：2010-05-20
申请号：US12618324
申请日：2009-11-13
申请人： Takamichi FUJII , Takayuki Naono , Takami Arakawa
发明人： Takamichi FUJII , Takayuki Naono , Takami Arakawa
IPC分类号： C23C14/34 , H05H1/24 , C23C16/54 , B32B9/00 , B67D7/02 , H01L41/24 , H01L41/187 , G10K9/122 , B41J2/045
CPC分类号： B41J2/155 , B41J2/14233 , C23C14/0036 , C23C14/088 , C23C14/3407 , C23C14/3471 , H01J37/32935 , H01J37/3299 , H01J37/34 , H01J37/3444 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/316 , Y10T29/42 , Y10T428/31504
摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
摘要翻译：当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

36. 发明申请

US20100090154A1 FILM DEPOSITING APPARATUS, A FILM DEPOSITING METHOD, A PIEZOELECTRIC FILM, AND A LIQUID EJECTING APPARATUS 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法，压电薄膜和液体喷射装置
公开(公告)号：US20100090154A1
公开(公告)日：2010-04-15
申请号：US12508623
申请日：2009-07-24
申请人： Takayuki Naono , Takamichi Fujii
发明人： Takayuki Naono , Takamichi Fujii
IPC分类号： H01L41/18 , C23C16/448 , H05H1/24 , C23C16/00
CPC分类号： C23C14/34 , C23C14/088 , H01J37/32091 , H01J37/32541 , H01J37/3438 , H01L41/1876 , H01L41/316
摘要： A film depositing apparatus comprises: a process chamber; a gas supply source for supplying the process chamber with gases necessary for film deposition; an evacuating unit for evacuating the interior of the process chamber; a target holder placed within the process chamber for holding a target; a substrate holder for holding a deposition substrate within the process chamber in a face-to-face relation with the target holder; a power supply unit for supplying electric power between the target holder and the substrate holder to generate a plasma within the process chamber; and an anode provided between the target holder and the substrate holder so as to surround the outer periphery of the side of the substrate holder that faces the target holder, the anode comprising at least one plate member for capturing ions in the plasma generated within the process chamber.
摘要翻译：一种成膜设备包括：处理室; 用于向处理室供应用于膜沉积所需的气体的气体供应源; 用于抽出处理室内部的排气单元; 放置在处理室内用于保持目标的目标支架; 衬底保持器，用于以与目标保持器的面对面关系将沉积衬底保持在处理室内; 电源单元，用于在所述目标保持器和所述基板保持器之间提供电力，以在所述处理室内产生等离子体; 以及设置在所述目标保持器和所述基板保持器之间的阳极，以围绕所述基板支架的面向所述目标支架的所述一侧的外周，所述阳极包括至少一个用于捕获在所述工艺中产生的等离子体中的离子的板构件房间。

37. 发明申请

US20090057135A1 SPUTTERING METHOD AND APPARATUS 有权
标题翻译：喷溅方法和装置
公开(公告)号：US20090057135A1
公开(公告)日：2009-03-05
申请号：US12197902
申请日：2008-08-25
申请人： Takamichi FUJII , Takayuki Naono
发明人： Takamichi FUJII , Takayuki Naono
IPC分类号： C23C14/00 , B41J2/045 , H01L41/00
CPC分类号： H01J37/34 , B41J2/161 , B41J2/1646 , C23C14/088 , H01J37/3444 , H01L41/316
摘要： The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.
摘要翻译：溅射装置包括真空容器，放置在真空容器内的溅射电极以保持待溅射的靶材料，用于向电极施加射频波的射频电源，与电极间隔开的衬底保持器保持基板，从目标材料的部件沉积在基板上的薄膜，以及用于调整基板保持器的第一阻抗的阻抗调节电路。阻抗调整电路具有直接设定在接地电位的第一端，并且具有可调节的阻抗电路以调整第一阻抗，调整阻抗电路的第二阻抗，从而调整第一阻抗，因此调整第一阻抗底物。

38. 发明授权

US09111732B2 Sputtering method and apparatus 有权
标题翻译：溅射方法和装置
公开(公告)号：US09111732B2
公开(公告)日：2015-08-18
申请号：US12197902
申请日：2008-08-25
申请人： Takamichi Fujii , Takayuki Naono
发明人： Takamichi Fujii , Takayuki Naono
IPC分类号： C23C14/00 , H01J37/34 , B41J2/16 , C23C14/08 , H01L41/316
CPC分类号： H01J37/34 , B41J2/161 , B41J2/1646 , C23C14/088 , H01J37/3444 , H01L41/316
摘要： The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.
摘要翻译：溅射装置包括真空容器，放置在真空容器内的溅射电极以保持待溅射的靶材料，用于向电极施加射频波的射频电源，与电极间隔开的衬底保持器保持基板，从目标材料的部件沉积在基板上的薄膜，以及用于调整基板保持器的第一阻抗的阻抗调节电路。阻抗调整电路具有直接设定在接地电位的第一端，并且具有可调节的阻抗电路以调整第一阻抗，调整阻抗电路的第二阻抗，从而调整第一阻抗，因此调整第一阻抗底物。

39. 发明授权

US08848272B2 Piezoelectric actuator, variable capacitor, and optical deflection device 有权
标题翻译：压电致动器，可变电容器和光学偏转装置
公开(公告)号：US08848272B2
公开(公告)日：2014-09-30
申请号：US13434227
申请日：2012-03-29
申请人： Takayuki Naono
发明人： Takayuki Naono
IPC分类号： G02B26/08 , H01G5/18 , H01L41/053 , H01G5/38 , H01L41/09 , H01L41/187
CPC分类号： H01L41/0933 , G02B26/0858 , H01G5/18 , H01G5/38 , H01L41/053 , H01L41/1875
摘要： A piezoelectric actuator according to an aspect of the invention can include: a first actuator including a first piezoelectric driving part; and a second actuator including a second piezoelectric driving part. A central portion of the first actuator can be supported. The first actuator can be bent and deformed by applying a first driving voltage to the first piezoelectric driving part, so that both end portions of the first actuator can be displaced in a thickness direction of the first actuator. Both end portions of the second actuator can be coupled to the both end portions of the first actuator. The second actuator can be bent and deformed in the opposite direction to the first actuator by applying a second driving voltage to the second piezoelectric driving part, so that a central portion of the second actuator can be displaced in a thickness direction of the second actuator.
摘要翻译：根据本发明的一个方面的压电致动器可以包括：第一致动器，包括第一压电驱动部分; 以及包括第二压电驱动部的第二致动器。可以支撑第一致动器的中心部分。第一致动器可以通过向第一压电驱动部施加第一驱动电压而弯曲和变形，使得第一致动器的两个端部可以在第一致动器的厚度方向上移位。第二致动器的两个端部可以联接到第一致动器的两个端部。第二致动器可以通过向第二压电驱动部施加第二驱动电压而沿与第一致动器相反的方向弯曲和变形，使得第二致动器的中心部分可以在第二致动器的厚度方向上移位。

40. 发明授权

US08801150B2 Piezoelectric device, piezoelectric device manufacturing method, and liquid discharge apparatus 有权
标题翻译：压电元件，压电元件的制造方法以及液体排出装置
公开(公告)号：US08801150B2
公开(公告)日：2014-08-12
申请号：US13000408
申请日：2009-07-27
申请人： Yoshikazu Hishinuma , Takehiro Kasahara , Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
发明人： Yoshikazu Hishinuma , Takehiro Kasahara , Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
IPC分类号： H01L41/18 , H01L41/083 , H01L41/04 , H01L41/02 , H01L41/00 , B41J2/045
CPC分类号： B41J2/161 , B41J2/1646 , C04B35/49 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要翻译：一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。

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