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    • 35. 发明申请
    • Electrically conducting polymer and production method and use thereof
    • 导电聚合物及其制备方法及用途
    • US20070021546A1
    • 2007-01-25
    • US10570140
    • 2004-09-01
    • Yuji NagaoRyuji YamamotoToshio Morita
    • Yuji NagaoRyuji YamamotoToshio Morita
    • C08K3/04
    • C08K7/06C08J3/201C08K3/04C08K2201/016C08L101/12H01B1/24
    • The invention provides a production method of a conductive polymer, comprising a step of blending a polymer in a state of a melt viscosity of 600 Pa·s or less at a shear rate of 100 s−1 with a vapor grown carbon fiber in 1 to 15 mass at a mixing energy of 1,000 mJ/m3 or less, and a conductive polymer obtained thereby. Preferably, a vapor grown carbon fiber used has an outer fiber diameter of 80 to 500 nm, an aspect ratio of 40 to 1,000, a BET specific surface area of 4: to 30 m2/g, a do02 of 0.345 nm or less according to an X-ray diffraction method, and a ratio (Id/Ig) of 0.1 to 2 wherein Id and Ig each represent peak heights of a band ranging from 1,341 to 1,349 cm−1 and a band ranging from 1,570 to 1,578 cm−1 respectively, according to a Raman scattering spectrum. According to the invention, an excellent conductivity can be attained by compounding vapor grown carbon fiber in a smaller amount than in a conventional method.
    • 本发明提供一种导电聚合物的制备方法,包括以100s -1 -1的剪切速率将熔融粘度为600Pa·s或更低的状态的聚合物与 在1000mJ / m 3以下的混合能量下,以1〜15质量份的气相生长碳纤维和由此得到的导电性聚合物。 优选使用的气相生长碳纤维的外纤维直径为80〜500nm,纵横比为40〜1000,BET比表面积为4〜30m 2 / g, do02为0.345nm以下,根据X射线衍射法的比例(Id / Ig)为0.1〜2,其中Id和Ig各自表示1341〜1349cm -1的峰的峰高, / SUP>,并且根据拉曼散射光谱分别为1,570至1,578cm -1的条带。 根据本发明,可以通过以比常规方法更少的量将气相生长的碳纤维复合而获得优异的导电性。
    • 36. 发明申请
    • Developing apparatus
    • 开发设备
    • US20060257175A1
    • 2006-11-16
    • US11429982
    • 2006-05-09
    • Rie EndoKatsuhiro SakaizawaRyuji Yamamoto
    • Rie EndoKatsuhiro SakaizawaRyuji Yamamoto
    • G03G15/08
    • G03G15/0815
    • A developing apparatus has a developer carrying member carrying a developer thereon, a developer supplying member for supplying the developer to the developer carrying member, and a scraping member for contacting with the developer carrying member upstream of the closest position between the developer carrying member and the developer supplying member with respect to the movement direction of the developer carrying member to thereby scrape off the developer from the developer carrying member, wherein there is formed a developer supplying portion surrounded by the scraping member, the developer carrying member and the developer supplying member for supplying the developer from the developer supplying member to the developer carrying member, and the developer scraped off by the scraping member is conveyed to a collecting passage differing from the closest position.
    • 显影装置具有在其上承载显影剂的显影剂承载构件,用于将显影剂供应到显影剂承载构件的显影剂供应构件和用于在显影剂承载构件和显影剂承载构件之间的最接近位置的上游与显影剂承载构件接触的刮削构件 显影剂供应构件相对于显影剂承载构件的移动方向从而从显影剂承载构件刮下显影剂,其中形成由刮擦构件包围的显影剂供应部分,显影剂承载构件和用于 将显影剂从显影剂供应构件供应到显影剂承载构件,并且由刮擦构件刮下的显影剂被传送到与最接近的位置不同的收集通道。
    • 37. 发明授权
    • Band-pass filter with trap circuits having different Q factors
    • 具有不同Q因子的陷波电路的带通滤波器
    • US5774027A
    • 1998-06-30
    • US701462
    • 1996-08-22
    • Ryuji Yamamoto
    • Ryuji Yamamoto
    • H03H7/01
    • H03H7/01
    • A band-pass filter device includes a band-pass filter having a characteristic for sufficiently passing signals belonging to a passing frequency band to be passed, a first trap circuit having a Q factor sufficiently higher than that of the BPF and attenuating signals belonging to a frequency band ranging frequencies higher than the passing frequency band, a second trap circuit for attenuating signals belonging to a frequency band ranging frequencies lower than the passing frequency band, a third trap circuit having a Q factor lower than that of the first trap circuit and attenuating an unnecessary component generated in the first trap circuit from the signal, a fourth trap circuit having a Q factor lower than that of the second trap circuit and attenuating an unnecessary component generated in the second trap circuit from the signal. When a first signal belonging to a passing frequency band and a second signal belonging to a frequency band ranging frequencies lower or higher than the passing frequency band are simultaneously supplied to a BPF device having this structure, the BPF device can selectively pass the first signal, and completely attenuate the unnecessary second signal. A structure comprising two BPF having different central passing frequencies, first and third trap circuits having relatively low Q factors, a second trap circuit having a high Q factor and eliminating an unnecessary component which cannot be removed by the first trap circuit can also realize such a good BPF device as described above.
    • 带通滤波器装置包括带通滤波器,该带通滤波器具有充分通过属于要通过的通过频带的信号的特性,具有足够高于BPF的Q因数的Q因子的第一陷波电路和属于 频带测距频率高于通过频带;第二陷波电路,用于衰减属于频带低于通过频带的频带的信号;第三陷波电路,Q因子低于第一陷波电路的频率,衰减 在所述第一陷波电路中从所述信号产生的不必要的分量,第四陷波电路的Q因数低于所述第二陷波电路的Q因子,并且衰减所述第二陷波电路中产生的不必要分量。 当属于通过频带的第一信号和属于频带低于或高于通过频带的频带的第二信号被同时提供给具有这种结构的BPF装置时,BPF装置可以选择性地通过第一信号, 并完全衰减不必要的第二信号。 包括具有不同中心通过频率的两个BPF的结构,具有相对低的Q因子的第一和第三陷波电路,具有高Q因数的第二陷波电路和消除不能被第一陷波电路去除的不必要的分量也可以实现这样的 良好的BPF装置如上所述。
    • 40. 发明授权
    • Manufacturing method of semiconductor device and substrate processing apparatus
    • 半导体器件和衬底处理设备的制造方法
    • US08716147B2
    • 2014-05-06
    • US12273028
    • 2008-11-18
    • Takaaki NodaMasami MiyamotoRyuji Yamamoto
    • Takaaki NodaMasami MiyamotoRyuji Yamamoto
    • H01L21/31
    • H01L21/02661C23C16/0227C23C16/24C23C16/45578C23C16/54H01L21/02532H01L21/0262
    • Provided are a manufacturing method of a semiconductor device and a substrate processing apparatus. The manufacturing method of the semiconductor device includes: loading a plurality of substrates into a reaction vessel, which is configured by a process tube and a manifold that supports the process tube, and arranging the loaded substrates within the reaction vessel; pre-processing the plurality of substrates by supplying a pre-process gas from the manifold side toward the process tube side within the reaction vessel; main-processing the plurality of pre-processed substrates by supplying a main-process gas from the manifold side toward the process tube side within the reaction vessel; and unloading the plurality of main-processed substrates from the reaction vessel, wherein in pre-processing the plurality of substrates, the pre-process gas is supplied from at least one position in an area corresponding to the manifold, and at least one position in an upper area of an area corresponding to a substrate arrangement area.
    • 提供一种半导体器件和衬底处理设备的制造方法。 半导体器件的制造方法包括:将多个基板装载到反应容器中,该反应容器由处理管和支撑处理管的歧管构成,并将负载的基板布置在反应容器内; 通过在反应容器内从歧管侧向处理管侧供给预处理气体来预处理多个基板; 通过在反应容器内从歧管侧向处理管侧供给主工艺气体来主要处理多个预处理衬底; 以及从所述反应容器中卸载所述多个主处理基板,其中在预处理所述多个基板时,所述预处理气体从对应于所述歧管的区域中的至少一个位置供应,并且至少一个位置 与衬底布置区域相对应的区域的上部区域。