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31. 发明授权

US5679815A Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same 失效
标题翻译：用于化学气相沉积工艺的钽和铌试剂，以及使用其沉积涂层的方法
公开(公告)号：US5679815A
公开(公告)日：1997-10-21
申请号：US307316
申请日：1994-09-16
申请人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
发明人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
IPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C04B35/00
CPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/405
摘要： Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula M(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.y wherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.
摘要翻译：适合用作化学气相沉积源试剂的铌和钽化合物，以及使用该化合物沉积含铌或钽的涂层的方法。该化合物具有式M（OR1）x（R2-C（GH）-C-C（G）-R3）y，其中M是钽或铌; G是氧或硫; 且R 1，R 2和R 3独立地选自烃基，氟代烷基或烷氧基。

32. 发明授权

US5576928A High-dielectric-constant material electrodes comprising thin platinum layers 失效
标题翻译：高介电常数材料电极，包括铂层
公开(公告)号：US5576928A
公开(公告)日：1996-11-19
申请号：US475121
申请日：1995-06-07
申请人： Scott R. Summerfelt , Howard R. Beratan , Peter S. Kirlin , Bruce E. Gnade
发明人： Scott R. Summerfelt , Howard R. Beratan , Peter S. Kirlin , Bruce E. Gnade
IPC分类号： H01L21/02 , H01G4/10
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译：本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。薄的非反应性膜可以受益于所使用的材料的优点，同时避免或最小化许多它们的缺点。薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。

33. 发明授权

US5536323A Apparatus for flash vaporization delivery of reagents 失效
标题翻译：用于闪蒸的试剂装置
公开(公告)号：US5536323A
公开(公告)日：1996-07-16
申请号：US280143
申请日：1994-07-25
申请人： Peter S. Kirlin , Robin L. Binder , Robin A. Gardiner , Peter V. Buskirk , Jiming Zhang , Gregory Stauf
发明人： Peter S. Kirlin , Robin L. Binder , Robin A. Gardiner , Peter V. Buskirk , Jiming Zhang , Gregory Stauf
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , H01L39/24 , C23C16/00
CPC分类号： C23C16/4483 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , H01L39/2441 , Y10S261/65 , Y10S261/88
摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.
摘要翻译：一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。载气可以流过闪蒸气化基质结构以产生含有闪蒸的源试剂的载气混合物。基质结构优选具有高的表面体积比，并且可以适当地包含诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型，以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。

34. 发明授权

US5453494A Metal complex source reagents for MOCVD 失效
标题翻译：用于MOCVD的金属络合物源试剂
公开(公告)号：US5453494A
公开(公告)日：1995-09-26
申请号：US181800
申请日：1994-01-18
申请人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24 , C06F5/00 , C07D213/22 , H01B12/00
CPC分类号： G02B6/02 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. The complexes of the invention utilize monodentate or multidentate ligands to provide additional coordination to the metal atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications.
摘要翻译：用于形成含金属膜的金属有机化学气相沉积（MOCVD）源试剂，如薄膜氧化铜高温超导体（HTSC）材料。所述源试剂具有下式：其中：M是金属如Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm Yb，Lu Bi ，Tl，Y或Pb; A是单齿或多齿有机配体; y为2或3; 在STP条件下，MAy是一个稳定的子复合体; 并且X是与M配位且含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。配体A可以例如选自 β-二酮酸酯，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧基化物和希夫碱。本发明的络合物利用单齿或多齿配位体为金属原子提供额外的配位，使得所得复合物具有增强的挥发性特征，并且增强了对MOCVD应用的适用性。

35. 发明授权

US5280012A Method of forming a superconducting oxide layer by MOCVD 失效
标题翻译：通过MOCVD形成超导氧化物层的方法
公开(公告)号：US5280012A
公开(公告)日：1994-01-18
申请号：US918141
申请日：1992-07-22
申请人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24 , C23C16/00 , B05D5/12
CPC分类号： C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441 , Y10S505/73 , Y10S505/734
摘要： This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.
摘要翻译：本发明涉及氧化铜超导材料的金属有机化学气相沉积（MOCVD）的形成。描述了适用于高温超导体（HTSC）材料形成的II族元素的各种源试剂，包括β-二酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基，全氟烷氧基和席夫碱，以及这些II族化合物的配合物，利用单齿或多齿配体，以提供与IIA族原子的额外配位，使得所得复合物具有增强的挥发性特征，并增强了对MOCVD应用的适用性。还公开了合成这种化合物和络合物的方法，包括制备具有增强的热稳定性特征的II族金属β-二酮化合物的方法。

36. 发明授权

US5122509A High temperature superconductor/diamond composite article, and method of making the same 失效
标题翻译：高温超导体/金刚石复合制品及其制造方法
公开(公告)号：US5122509A
公开(公告)日：1992-06-16
申请号：US516156
申请日：1990-04-30
申请人： Charles P. Beetz, Jr. , Peter S. Kirlin
发明人： Charles P. Beetz, Jr. , Peter S. Kirlin
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/30 , Y10T428/31504 , Y10T428/31678
摘要： A multilayer superconducting thin film composite article, comprising a carbon-containing substrate, and an interlayer comprising a material selected from the group consisting of zirconium, yttrium, niobium, and carbides and oxides thereof, platinum, iridium, gold, palladium, and silver, and an overlayer comprising an HTSC material. The carbon-containing substrate preferably comprises diamond and the interlayer preferably comprises a zirconium carbide sub-layer at the interface with the substrate, an intermediate sub-layer of zirconium metal, and an outer sub-layer of zirconium oxide at the interface with the HTSC material overlayer. The superconducting thin film material may comprise a copper oxide HTSC material, with YBaCuO, TlBaCaCuO, and BiSrCaCuO HTSC materials being preferred. The interlayer accommodates formation of the superconducting film in an oxic environment at elevated temperature without destruction of the substrate, while at the same time protecting the HTSC material in the overlayer from deleterious reaction with the substrate which otherwise may cause the HTSC material or precursor thereof to be highly resistive, i.e., non-superconducting, in character. The invention thus permits the fabrication of devices incorporating HTSC films with carbon-containing substrates such as diamond, including high operating temperature bolometers, and high power, high speed switching devices.
摘要翻译：一种多层超导薄膜复合制品，包括含碳基底和包含选自锆，钇，铌及其碳化物及其氧化物，铂，铱，金，钯和银的材料的中间层，以及包括HTSC材料的覆盖层。含碳基板优选地包括金刚石，并且中间层优选地包括与基板的界面处的碳化锆子层，锆金属的中间子层和在与HTSC的界面处的氧化锆的外部子层材料覆盖层超导薄膜材料可以包含氧化铜HTSC材料，优选YBaCuO，TlBaCaCuO和BiSrCaCuO HTSC材料。中间层可以在氧化环境中在升高的温度环境中形成超导膜而不损坏衬底，同时保护覆盖层中的HTSC材料免受与衬底的有害反应，否则可能导致HTSC材料或其前体具有高电阻性，即非超导性。因此，本发明允许制造包含HTSC膜的装置，其中包含诸如金刚石等含碳基板，包括高工作温度测辐射热计和大功率高速开关装置。

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