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31. 发明授权

US4746963A Isolation regions formed by locos followed with groove etch and refill 失效
标题翻译：由区域形成的隔离区域随后进行凹槽蚀刻和再填充
公开(公告)号：US4746963A
公开(公告)日：1988-05-24
申请号：US946778
申请日：1986-12-29
申请人： Akihisa Uchida , Daisuke Okada , Toshihiko Takakura , Katsumi Ogiue , Yoichi Tamaki , Masao Kawamura
发明人： Akihisa Uchida , Daisuke Okada , Toshihiko Takakura , Katsumi Ogiue , Yoichi Tamaki , Masao Kawamura
IPC分类号： H01L21/316 , H01L21/331 , H01L21/76 , H01L21/762 , H01L21/763 , H01L21/768 , H01L23/522 , H01L29/73 , H01L21/95
CPC分类号： H01L21/76224 , H01L21/76 , H01L21/76202 , H01L21/763 , H01L2924/0002 , Y10S438/981
摘要： A semiconductor device employing a new isolation process is disclosed, wherein an isolation area is a region in which a burying material is buried in a deep groove formed in a semiconductor body with a substantially constant width by anisotropic dry etching, semiconductor elements are formed in selected ones of semiconductor regions isolated by the isolation area, and others of the semiconductor regions, with no semiconductor element formed therein, have their whole surface covered with a thick oxide film which is produced by the local oxidation of the semiconductor body. The new isolation process is well-suited for a bipolar type semiconductor device, wherein the deep groove is formed so as to reach a semiconductor substrate through an N.sup.+ -type buried layer, and a thick oxide film formed simultaneously with the aforementioned thick oxide film isolates the base region and collector contact region of a bipolar transistor.
摘要翻译：公开了一种采用新的隔离工艺的半导体器件，其中隔离区域是通过各向异性干法蚀刻将掩埋材料埋入形成在半导体主体中的宽度基本恒定的深沟槽的区域，半导体元件形成为选定的通过隔离区域隔离的半导体区域以及其中没有形成半导体元件的其它半导体区域，其全部表面被由半导体本体的局部氧化产生的厚氧化膜覆盖。新的隔离工艺非常适用于双极型半导体器件，其中深沟形成为通过N +型掩埋层到达半导体衬底，并且与上述厚氧化膜隔离物同时形成的厚氧化膜双极晶体管的基极区域和集电极接触区域。

32. 发明授权

US4722917A Anti-I sorbent 失效
标题翻译：抗吸附剂
公开(公告)号：US4722917A
公开(公告)日：1988-02-02
申请号：US699571
申请日：1985-02-07
申请人： Taiko Seno , Yasuto Okubo , Masao Kawamura , Seiichi Akutsu , Hirosuke Fukuda
发明人： Taiko Seno , Yasuto Okubo , Masao Kawamura , Seiichi Akutsu , Hirosuke Fukuda
IPC分类号： G01N33/53 , G01N33/80 , B01J37/36 , B01J20/16 , B01J20/24 , B01J20/26
CPC分类号： G01N33/80 , Y10S435/962 , Y10S436/825
摘要： An anti-I sorbent which comprises as I blood group substances at least two materials selected from the group consisting of mucin and milk derived from Eutheria and ovomucoid from Ornithurae. The use of the anti-I sorbent inhibits the formation of false positive agglutination caused by anti-I autoantibody.
摘要翻译：一种抗I吸附剂，其包含至少两种选自以下组中的至少两种材料的抗血清物质：来自欧氏菌的粘蛋白和乳以及来自Ornithurae的卵类粘蛋白。使用抗I吸附剂抑制由抗I自身抗体引起的假阳性凝集的形成。

33. 发明授权

US4642693A Television video signal A/D converter apparatus 失效
标题翻译：电视视频信号A / D转换装置
公开(公告)号：US4642693A
公开(公告)日：1987-02-10
申请号：US733584
申请日：1985-05-13
申请人： Takahiro Fuse , Masao Kawamura , Koji Yamagishi , Kazuyuki Odachi , Haruo Ono , Masaharu Kizaki
发明人： Takahiro Fuse , Masao Kawamura , Koji Yamagishi , Kazuyuki Odachi , Haruo Ono , Masaharu Kizaki
IPC分类号： H04N5/14 , G09G3/36 , H03M1/00 , H04N3/12 , H04N5/20 , H04N5/57 , H04N5/66 , H04N5/74
CPC分类号： H04N3/127 , H03M1/362
摘要： A television video signal A/D converter apparatus in a liquid crystal television receiver has an A/D converter for A/D converting a television video signal. Upper and lower reference potentials for determining an operating voltage amplitude are supplied to the A/D converter from a reference potential generator. The upper and lower reference potentials are divided at a given ratio by a resistor so as to fix an average potential of the television video signal at a constant value using the potential at the dividing point as a bias potential, and thereafter the television video signal is supplied to the A/D converter.
摘要翻译：液晶电视接收机中的电视视频信号A / D转换装置具有用于A / D转换电视视频信号的A / D转换器。用于确定工作电压幅度的上限和下限参考电位从参考电位发生器提供给A / D转换器。上下参考电位通过电阻器以给定的比例被分频，以便将电视视频信号的平均电位用分压点的电位作为偏置电位固定在一个恒定值，之后电视视频信号是提供给A / D转换器。

34. 发明授权

US4124646A Process for producing thioanisole 失效
标题翻译：硫代苯甲醚制备方法
公开(公告)号：US4124646A
公开(公告)日：1978-11-07
申请号：US737623
申请日：1976-11-01
申请人： Masao Kawamura , Masakazu Hatta , Nobuhiro Koune , Nobuyuki Kitagishi
发明人： Masao Kawamura , Masakazu Hatta , Nobuhiro Koune , Nobuyuki Kitagishi
IPC分类号： C07C148/00
CPC分类号： C07C321/00
摘要： Industrially useful alkylphenyl sulfides are produced in high yield from phenyl mercaptan as a raw material by reaction of the phenyl mercaptan with an alkyl alcohol or dialkyl ether, or alkyl mercaptan or dialkyl sulfide having 1 to 4 carbon atoms as a novel alkylating agent at an elevated temperature, for example, 150.degree. to 600.degree. C, in a gaseous phase.
摘要翻译：通过苯基硫醇与烷基醇或二烷基醚或具有1至4个碳原子的烷基硫醇或二烷基硫烷作为新的烷基化剂在升高的反应中，以苯硫醇为原料以高产率制备了工业上有用的烷基苯基硫化物温度，例如150〜600℃的气相。

35. 发明授权

US4017881A Light emitting semiconductor device and a method for making the same 失效
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US4017881A
公开(公告)日：1977-04-12
申请号：US612282
申请日：1975-09-11
申请人： Yuichi Ono , Kazuhiro Kurata , Masao Kawamura , Makoto Morioka , Kazuhiro Ito
发明人： Yuichi Ono , Kazuhiro Kurata , Masao Kawamura , Makoto Morioka , Kazuhiro Ito
IPC分类号： H01L21/22 , H01L33/14 , H01L33/30 , H01L33/40 , H01S3/19
CPC分类号： H01L33/20 , H01L33/00 , H01L33/0008 , H01L33/0062 , Y10S148/049 , Y10S148/051 , Y10S148/072 , Y10S148/085
摘要： In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.
摘要翻译：在制造具有半球形圆顶型几何形状的发光器件的方法中，p型导电型和n型导电型层在由混合化合物半导体晶体制成的衬底上外延连续地生长，所述混合化合物半导体晶体的带隙宽于二上述层。这些外延生长层的表面部分未被掩模在沉积在n导电型层上的p型结的位置处的掩模覆盖，其中p型结被掺杂有p导电型杂质，导电类型区域被转换为p导电型的区域包围。晶体的另一侧形成为半球形状，使得n导电型区域位于半球的中心部分。

36. 发明申请

US20120197201A1 INDWELLING NEEDLE AND INDWELLING NEEDLE ASSEMBLY 有权
标题翻译：固定针和钉扎针组件
公开(公告)号：US20120197201A1
公开(公告)日：2012-08-02
申请号：US13447700
申请日：2012-04-16
申请人： Hidenori TANABE , Masao Kawamura , Takato Murashita
发明人： Hidenori TANABE , Masao Kawamura , Takato Murashita
IPC分类号： A61B17/34 , A61M5/00
CPC分类号： A61M25/0606 , A61M5/158 , A61M39/0606 , A61M2039/0633 , A61M2039/0686
摘要： A indwelling needle includes an outer needle, an outer needle hub with a flow path communicating with the inside of the outer needle and configured to connect a connector to the flow path, and a valve mechanism which opens and closes the flow path. The valve mechanism includes a valve element in the middle of the flow path having an openable/closable opening/closing section and an operation member having a side hole and configured to open and close the opening/closing section. The valve mechanism is positionable in a state in which the operation member penetrates through the opening/closing section to protrude therefrom and the side hole is located closer to the front end side than the opening/closing section. When infusion liquid is supplied in this state, the liquid flows to the flow path through the side hole and the dead space within the flow path is filled with the infusion liquid.
摘要翻译：留置针包括外针，外针毂，其具有与外针的内部连通并且被配置为将连接器连接到流路的流路，以及打开和关闭流路的阀机构。阀机构包括在流路中间的阀元件，该阀元件具有可打开/关闭的开/关部分和具有侧孔并且构造成打开和关闭开/关部分的操作构件。阀机构可以在操作构件穿过打开/关闭部分从其突出的状态下定位，并且侧孔位于比开闭部更靠近前端侧。当在该状态下供给输液时，液体通过侧孔流入流路，流路内的死空间填充有输注液。

37. 发明授权

US5141888A Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions 失效
标题翻译：制造具有TRENCH和现场隔离区域的半导体集成电路装置的制造方法
公开(公告)号：US5141888A
公开(公告)日：1992-08-25
申请号：US642922
申请日：1991-01-18
申请人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
发明人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
IPC分类号： H01L21/762 , H01L21/763 , H01L29/732
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7325 , Y10S148/05
摘要： A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.

38. 发明授权

US5117224A Color liquid crystal display apparatus 失效
标题翻译：彩色液晶显示装置
公开(公告)号：US5117224A
公开(公告)日：1992-05-26
申请号：US310321
申请日：1989-02-13
申请人： Masao Kawamura , Ken Yoshino
发明人： Masao Kawamura , Ken Yoshino
IPC分类号： G09G3/20 , G09G3/36
CPC分类号： G09G3/3607 , G09G3/2014
摘要： In driving a color liquid crystal panel having red, green and blue color filters, a color liquid crystal display apparatus sets signal electrodes of these three colors in a no-bias status during a non-display period of an image signal in such a manner as to permit at least two colors of the signal electrodes have mutually different effective voltages. The effective voltages in the no-bias state are set at values which provide the optimum value for .DELTA.n.multidot.d (.DELTA.n: birefringence) in accordance with cell gaps d on the signal electrodes, thereby minimizing the height difference between the color filters.
摘要翻译：在驱动具有红色，绿色和蓝色滤色器的彩色液晶面板时，彩色液晶显示装置在图像信号的非显示时段期间以无偏压状态设置这三种颜色的信号电极，方式如以允许信号电极的至少两种颜色具有相互不同的有效电压。无偏压状态下的有效电压被设定为根据信号电极上的电池间隙d为DELTA nxd（DELTA n：双折射）提供最佳值的值，从而最小化滤色器之间的高度差。

39. 发明授权

US5102858A Heat-sensitive recording materials containing high purity bis(4-hydroxyphenyl)sulfides 失效
标题翻译：包含高纯度双（4-羟基苯基）硫化物的感应记录材料
公开(公告)号：US5102858A
公开(公告)日：1992-04-07
申请号：US365142
申请日：1989-06-12
申请人： Akira Onoe , Masao Kawamura , Kunioki Kato , Tomiharu Amitani , Makoto Sato , Tsuyoshi Morishita
发明人： Akira Onoe , Masao Kawamura , Kunioki Kato , Tomiharu Amitani , Makoto Sato , Tsuyoshi Morishita
IPC分类号： B41M5/327 , B41M5/333 , C07C319/14 , C07C323/20
CPC分类号： B41M5/3336 , C07C319/14
摘要： In a process of producing high purity bis(4-hydroxyphenyl) sulfides which comprises reacting phenols with sulfur dichloride in organic solvents, the improvement comprising: reacting the phenols with sulfur dichloride in nonpolar organic solvents; removing partly or wholly the nonpolar organic solvents after the reaction; adding polar organic solvents to the reaction mixture to dissolve the reaction mixture therein at elevated temperatures; and crystallizing out the high purity bis(4-hydroxyphenyl)sulfides.There is further provided a high performance heat-sensitive recording material which comprises high purity bis(4-hydroxy-3-methylphenyl)sulfide thus prepared and having a melting point in the range of from 123.9.degree. C. to 124.9.degree. C. as a developer and a fluoran compound as a color former.

40. 发明授权

US4965566A Signal electrode drive circuit for image display apparatus operable under low frequency 失效
标题翻译：用于在低频下可操作的图像显示装置的信号电极驱动电路
公开(公告)号：US4965566A
公开(公告)日：1990-10-23
申请号：US276410
申请日：1988-11-25
申请人： Masao Kawamura , Minoru Usui
发明人： Masao Kawamura , Minoru Usui
IPC分类号： G09G3/20 , G09G3/36
CPC分类号： G09G3/3685 , G09G2310/027 , G09G2310/0297 , G09G3/2014
摘要： In a signal electrode drive circuit of an image display apparatus, the latch pulses are sequentially shifted for a plurality of latch circuits so as to sequentially latch the digital image data, and the signal electrode of the dot-matrix type display panel is driven by the signal having a plurality of gradation, based upon the digital image data latched in the latch circuits. The image input data are alternately read out via the buffer circuits by two-phase clock pulses, the input data are transferred to the latch circuits in response to the two-phase clock pulses, and, as a consequence, image data of higher transfer frequency can be satisfactorily processed.
摘要翻译：在图像显示装置的信号电极驱动电路中，针对多个锁存电路顺序地移位锁存脉冲，以顺序地锁存数字图像数据，点阵型显示面板的信号电极由基于锁存在锁存电路中的数字图像数据，具有多个灰度级的信号。通过两相时钟脉冲经由缓冲电路交替地读出图像输入数据，响应于两相时钟脉冲将输入数据传送到锁存电路，结果是传输频率较高的图像数据可以令人满意地加工。

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