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31. 发明申请

US20100148151A1 LIGHT EMITTING DEVICES WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的发光装置
公开(公告)号：US20100148151A1
公开(公告)日：2010-06-17
申请号：US12710554
申请日：2010-02-23
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.
摘要翻译：一种器件包括发光结构和包括半导体的波长转换构件。发光结构被结合到波长转换构件。在一些实施例中，发光结构用无机粘合材料结合到波长转换构件。在一些实施例中，发光结构用折射率大于1.5的接合材料结合到波长转换部件。

32. 发明申请

US20080186702A1 Array of Light Emitting Devices to Produce a White Light Source 审中-公开
标题翻译：发光装置阵列产生白光源
公开(公告)号：US20080186702A1
公开(公告)日：2008-08-07
申请号：US12099021
申请日：2008-04-07
申请人： Michael D. Camras , William R. Imler , Franklin J. Wall , Frank M. Steranka , Michael R. Krames , Helena Ticha , Ladislav Tichy , Robertus G. Alferink
发明人： Michael D. Camras , William R. Imler , Franklin J. Wall , Frank M. Steranka , Michael R. Krames , Helena Ticha , Ladislav Tichy , Robertus G. Alferink
IPC分类号： F21V9/10
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the LEDs to produce a desired correlated color temperature. The phosphor converted LEDs may also be combined in an array with color LEDs. The color LEDs may be controlled to vary their brightness such that light with an approximately continuous broad spectrum is produced. By controlling the brightness of the color LEDs, light can be produced with a fixed brightness over a large range of white points with a high color rendering quality.
摘要翻译：设备具有产生广谱光的多个磷光体转换发光器件（LED）的阵列。磷光体转换的LED可以产生具有不同相关色温（CCT）的光，并且被有助于混合来自LED的光以产生期望的相关色温的光学元件覆盖。磷光体转换的LED也可以与阵列中的彩色LED组合。可以控制彩色LED以改变其亮度，使得产生具有近似连续的广谱的光。通过控制彩色LED的亮度，可以在具有高显色质量的大范围白点上以固定的亮度产生光。

33. 发明授权

US07345323B2 Formation of Ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US07345323B2
公开(公告)日：2008-03-18
申请号：US11095854
申请日：2005-03-30
申请人： Werner K. Goetz , Michael D. Camras , Xiaoping Chen, legal representative , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Changhua Chen
IPC分类号： H02L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

34. 发明授权

US07053419B1 Light emitting diodes with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的发光二极管
公开(公告)号：US07053419B1
公开(公告)日：2006-05-30
申请号：US09660317
申请日：2000-09-12
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/505 , H01L2933/0058
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到具有由有源区发射的光的折射率的透明透镜，优选大于约1.5，更优选大于约1.8。将透明透镜粘合到具有包括有源区的半导体层的层叠的发光器件的方法包括提高透镜和叠层的温度并施加压力以将透镜和叠层压在一起。将高折射率透镜粘合到发光器件通过减少由于全内反射引起的损耗来提高发光器件的光提取效率。有利地，可以在不使用密封剂的情况下实现这种改进。

35. 发明授权

US06987613B2 Forming an optical element on the surface of a light emitting device for improved light extraction 有权
公开(公告)号：US06987613B2
公开(公告)日：2006-01-17
申请号：US09823841
申请日：2001-03-30
申请人： Douglas W. Pocius , Michael D. Camras , Gloria E. Hofler
发明人： Douglas W. Pocius , Michael D. Camras , Gloria E. Hofler
IPC分类号： G02B27/44
CPC分类号： H01L33/20 , G02B5/32 , H01L33/44
摘要： Provided is a light emitting device including a Fresnel lens and/or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an optical element stamped on a surface for improved light extraction and the stamping method used to form such device. An optical element formed on the surface of a semiconductor light emitter reduces reflective loss and loss due to total internal reflection, thereby improving light extraction efficiency. A Fresnel lens or a holographic diffuser may be formed on a surface by wet chemical etching or dry etching techniques, such as plasma etching, reactive ion etching, and chemically-assisted ion beam etching, optionally in conjunction with a lithographic technique. In addition, a Fresnel lens or a holographic diffuser may be milled, scribed, or ablated into the surface. Stamping, an alternative method for forming an optical element, can also be used to form a Fresnel lens or a holographic diffuser on the surface of a semiconductor light emitter. Stamping includes pressing a stamping block against the surface of a light emitting diode. The stamping block has a shape and pattern that are the inverse of the desired optical element. Optionally, stamping can be done before, after, or concurrently with wafer-bonding. Alternatively, a material can be stamped and later bonded to the semiconductor light emitter.

36. 发明授权

US06946309B2 III-Phosphide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L33/02 , H01L33/08 , H01L33/14 , H01L33/20 , H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

37. 发明授权

US06576932B2 Increasing the brightness of III-nitride light emitting devices 有权
公开(公告)号：US06576932B2
公开(公告)日：2003-06-10
申请号：US09797770
申请日：2001-03-01
申请人： Reena Khare , Werner K. Goetz , Michael D. Camras
发明人： Reena Khare , Werner K. Goetz , Michael D. Camras
IPC分类号： H01L3300
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L33/007 , H01L33/16
摘要： LEDs employing a III-Nitride light emitting active region deposited on a base layer above a substrate show improved optical properties with the base layer grown on an intentionally misaligned substrate with a thickness greater than 3.5 &mgr;m. Improved brightness, improved quantum efficiency, and a reduction in the current at which maximum quantum efficiency occurs are among the improved optical properties resulting from use of a misaligned substrate and a thick base layer. Illustrative examples are given of misalignment angles in the range from 0.05° to 0.50°, and base layers in the range from 6.5 to 9.5 &mgr;m although larger values of both misalignment angle and base layer thickness can be used. In some cases, the use of thicker base layers provides sufficient structural support to allow the substrate to be removed from the device entirely.

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