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31. 发明申请

US20090081868A1 VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS 有权
标题翻译：碳酸氮化物材料的蒸气沉积工艺
公开(公告)号：US20090081868A1
公开(公告)日：2009-03-26
申请号：US11860945
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01L21/28556 , H01L21/28562
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

32. 发明授权

US07429402B2 Ruthenium as an underlayer for tungsten film deposition 失效
标题翻译：钌作为钨膜沉积的底层
公开(公告)号：US07429402B2
公开(公告)日：2008-09-30
申请号：US11009331
申请日：2004-12-10
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： C23C16/00 , H01L21/20 , H01L21/469
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.
摘要翻译：在一个实施例中，提供了一种在衬底上沉积含钨膜的方法，其包括在衬底上沉积阻挡层，例如含有钛或钽的阻挡层，并在阻挡层上沉积钌层。该方法还包括在钌层上沉积钨成核层并在钨成核层上沉积钨体层。优选通过ALD工艺，通过ALD工艺，CVD工艺或PVD工艺独立地沉积阻挡层，钌层，钨成核层和钨体层。在一些实例中，在沉积后续层之前，例如在阻挡层和钌层的沉积，钌层和钨成核层或钨成核层和钨体之间，将衬底暴露于浸泡工艺层。

33. 发明申请

US20070054487A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS 审中-公开
公开(公告)号：US20070054487A1
公开(公告)日：2007-03-08
申请号：US11470466
申请日：2006-09-06
申请人： PAUL MA , KAVITA SHAH , DIEN-YEH WU , SESHADRI GANGULI , CHRISTOPHE MARCADAL , FREDERICK WU , SCHUBERT CHU
发明人： PAUL MA , KAVITA SHAH , DIEN-YEH WU , SESHADRI GANGULI , CHRISTOPHE MARCADAL , FREDERICK WU , SCHUBERT CHU
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45542 , C23C16/45553 , H01L21/28556 , H01L21/76843 , H01L21/76846
摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.

34. 发明申请

US20060246699A1 Process for electroless copper deposition on a ruthenium seed 审中-公开
标题翻译：在钌种子上沉积无电镀铜的方法
公开(公告)号：US20060246699A1
公开(公告)日：2006-11-02
申请号：US11385038
申请日：2006-03-20
申请人： Timothy Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert Chu , Frederick Wu , Kavita Shah
发明人： Timothy Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert Chu , Frederick Wu , Kavita Shah
IPC分类号： H01L21/44
CPC分类号： C23C18/40 , C23C18/1608 , C23C18/165 , H01L21/288 , H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
摘要翻译：本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

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