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31. 发明授权

US07234358B2 Pressure detecting apparatus 有权
标题翻译：压力检测装置
公开(公告)号：US07234358B2
公开(公告)日：2007-06-26
申请号：US11354959
申请日：2006-02-16
申请人： Kazunori Saito , Yuji Ichimura , Kei Yamaguchi , Katsumichi Ueyanagi , Shigeru Shinoda
发明人： Kazunori Saito , Yuji Ichimura , Kei Yamaguchi , Katsumichi Ueyanagi , Shigeru Shinoda
IPC分类号： G01L9/00
CPC分类号： G01L19/143 , G01L19/0084 , G01L19/146 , G01L19/147
摘要： A pressure detecting apparatus has a pressure detecting device that converts a strain caused by a stress exerted thereto to an electrical signal, and outputs the converted electrical signal. The apparatus has a housing base including a housing recess that houses the pressure detecting device therein, and a connecting material interposed between the pressure detecting device and the housing recess. The connecting material connects the pressure detecting device and the housing recess with a tensile elongation percentage of about 400% or higher. The pressure detecting apparatus facilitates preventing thermal stress from adversely affecting the detection performance thereof, and produces excellent thermal response.
摘要翻译：压力检测装置具有压力检测装置，其将施加于其上的应力引起的应变转换为电信号，并输出转换后的电信号。该装置具有壳体基部，该壳体基部包括容纳凹部，该壳体凹部容纳其中的压力检测装置，以及插入在压力检测装置和壳体凹部之间的连接材料。连接材料以约400％以上的拉伸伸长率连接压力检测装置和容纳凹部。压力检测装置有助于防止热应力对其检测性能产生不利影响，并且产生优异的热响应。

32. 发明申请

US20060238186A1 Semiconductor device and temperature detection method using the same 审中-公开
标题翻译：半导体器件和温度检测方法使用相同
公开(公告)号：US20060238186A1
公开(公告)日：2006-10-26
申请号：US11342877
申请日：2006-01-31
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G01N27/00
CPC分类号： G01K7/01 , G01K2205/02 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus has a temperature detecting section for detecting temperature with a semiconductor device formed in a semiconductor substrate; a temperature detector output terminal formed on the substrate for outputting a detection signal; a current generating device connected to the output terminal for supplying a driving current to the temperature detecting section; and a voltage measuring device connected to the output terminal for measuring the voltage of the output terminal. The apparatus detects temperature based on the voltage measured by the voltage measuring device when the driving current is supplied from the current generating device to the temperature detecting section. The apparatus is small, accurate, and easily manufactured at relatively low cost.
摘要翻译：半导体装置具有温度检测部，用于利用半导体衬底中形成的半导体器件来检测温度; 温度检测器输出端子，形成在所述基板上，用于输出检测信号; 连接到输出端子的电流产生装置，用于向温度检测部分提供驱动电流; 以及连接到输出端子的电压测量装置，用于测量输出端子的电压。当从电流发生装置向温度检测部提供驱动电流时，该装置基于由电压测量装置测量的电压来检测温度。该设备小巧，准确，易于以相对较低的成本制造。

33. 发明申请

US20050016289A1 Physical value detecting apparatus and housing for physical value detecting means 有权
标题翻译：物理值检测装置和物理值检测装置
公开(公告)号：US20050016289A1
公开(公告)日：2005-01-27
申请号：US10854232
申请日：2004-05-27
申请人： Kazunori Saito , Kimihiro Ashino , Katsumichi Ueyanagi , Shigeru Shinoda
发明人： Kazunori Saito , Kimihiro Ashino , Katsumichi Ueyanagi , Shigeru Shinoda
IPC分类号： G01L9/00 , G01D11/24 , H01L23/16 , H01L29/84 , H03H7/38
CPC分类号： G01D11/245 , H01L23/16 , H01L24/73 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/15153 , H01L2924/00012
摘要： A physical value detecting apparatus includes a housing having a concave portion; a physical value detecting device housed in the concave portion and having a substantially rectangular shape for converting a physical value into an electric signal and outputting the electric signal; a device for taking out a signal from the physical value detecting device; an adhesive member for adhering the physical value detecting device to the concave portion; and a positioning device provided on an inner wall of the concave portion for positioning the physical value detecting device. The concave portion supports the physical value detecting device at a bottom thereof via the adhesive member without contacting corner parts of the physical value detecting device.
摘要翻译：物理值检测装置包括具有凹部的壳体; 物理值检测装置，其容纳在所述凹部中并且具有用于将物理值转换为电信号并输出所述电信号的大致矩形形状; 用于从物理值检测装置取出信号的装置; 用于将所述物理值检测装置粘附到所述凹部的粘合构件; 以及设置在所述凹部的内壁上的定位装置，用于定位所述物理值检测装置。凹部经由粘接部件在其底部支撑物理值检测装置，而不接触物理值检测装置的角部。

34. 发明授权

US06684371B2 Layout of semiconductor integrated circuit 有权
标题翻译：半导体集成电路布局
公开(公告)号：US06684371B2
公开(公告)日：2004-01-27
申请号：US10117340
申请日：2002-04-08
申请人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G06F1750
CPC分类号： G06F17/5068 , H01L2224/05553
摘要： To improve the capability to withstand noises and surges in a semiconductor integrated circuit in which an RC filter for cutting electromagnetic wave noises is integrated with analog circuits and digital circuits, a positive electrode of a capacitor constituting the RC filter is disposed apart from circuit elements or connection lines constituting the circuits at such an interval as to prevent malfunction of the circuit elements resulting from a noise superimposed on the positive electrode, or dielectric breakdown of the capacitor constituting the RC filter and latch-up and dielectric breakdown of the circuit elements resulting from a surge applied to the positive electrode. The interval is larger than the minimum interval required by a layout rule or five times longer than the minimum.
摘要翻译：为了提高在用于切割电磁波噪声的RC滤波器与模拟电路和数字电路集成的半导体集成电路中抵抗噪声和浪涌的能力，构成RC滤波器的电容器的正电极与电路元件或构成电路的连接线以这样的间隔来防止由叠加在正电极上的噪声导致的电路元件的故障，或者构成RC滤波器的电容器的电介质击穿以及由此产生的电路元件的闭锁和电介质击穿施加到正电极的浪涌。间隔大于布局规则所需的最小间隔或比最小值长五倍的间隔。

35. 发明授权

US06494092B2 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor 失效
标题翻译：半导体传感器芯片及其制造方法，以及用于组装传感器的半导体传感器和封装
公开(公告)号：US06494092B2
公开(公告)日：2002-12-17
申请号：US09957241
申请日：2001-09-21
申请人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
发明人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
IPC分类号： G01P102
CPC分类号： G01P1/023 , G01P15/0802 , G01P15/0888 , G01P15/11 , G01P15/123 , G01P21/00 , H01F10/126 , H01F10/265 , H05K1/18
摘要： The present invention is a semiconductor sensor having a semiconductor sensor chip for detecting a physical value applied in a direction perpendicular to the chip surface; and a package for incorporating the semiconductor sensor chip. The main surface for mounting the semiconductor sensor chip is formed at a predetermined angle with respect to the surface of a printed circuit board for mounting the package. The main surface is provided with a plurality of terminals along two opposite sides for connecting with input/output terminals of the semiconductor sensor chip. A bottom surface, perpendicular to the main surface, is provided with a plurality of pins formed along the two sides parallel to the main surface, so that the plurality of pins are inserted into mounting holes formed in the printed circuit board. The plurality of terminals and the plurality of pins are electrically connected, and input/output terminals of the semiconductor sensor chip mounted on the main surface are electrically connected with the plurality of terminals of the package.
摘要翻译：本发明是具有半导体传感器芯片的半导体传感器，用于检测在垂直于芯片表面的方向上施加的物理值; 以及用于并入半导体传感器芯片的封装。用于安装半导体传感器芯片的主表面相对于用于安装封装的印刷电路板的表面以预定角度形成。主表面沿着两个相对侧设置有多个端子，用于连接半导体传感器芯片的输入/输出端子。垂直于主表面的底面设置有沿着平行于主表面的两侧形成的多个销，使得多个销插入形成在印刷电路板中的安装孔中。多个端子和多个引脚电连接，并且安装在主表面上的半导体传感器芯片的输入/输出端子与封装的多个端子电连接。

36. 发明授权

US06332359B1 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor 失效
标题翻译：半导体传感器芯片及其制造方法，以及用于组装传感器的半导体传感器和封装
公开(公告)号：US06332359B1
公开(公告)日：2001-12-25
申请号：US09241096
申请日：1999-02-01
申请人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
发明人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
IPC分类号： G01P1512
CPC分类号： G01P1/023 , G01P15/0802 , G01P15/0888 , G01P15/11 , G01P15/123 , G01P21/00 , H01F10/126 , H01F10/265 , H05K1/18
摘要： A sensor chip having a support frame part and sensor structure including at least one displaceable weight part, and a beam part for connecting the weight part to the support frame part. The sensor structure is formed on a silicon substrate through an insulating layer and the insulating layer between the sensor structure and the silicon substrate is removed. The beam part is formed of two parallel beams and the weight part is connected to the support frame part by two parallel beams. At least two semiconductor strain gauges are formed on the surface of the two respective parallel beams. The semiconductor chip may be contained in a package having a main surface for mounting the semiconductor sensor chip formed at a predetermined angle with respect to the surface of a printed circuit board for mounting the package. The main surface is provided with a plurality of terminals along two opposite sides thereof for connecting with input/output terminals of the semiconductor sensor chip. A bottom surface perpendicular to the main surface is provided with a plurality of pins for inserting into mounting holes of the circuit board.
摘要翻译：一种具有支撑框架部分和传感器结构的传感器芯片，所述传感器芯片包括至少一个位移重量部分和用于将所述重量部分连接到所述支撑框架部分的梁部分。传感器结构通过绝缘层形成在硅衬底上，并且去除传感器结构和硅衬底之间的绝缘层。梁部分由两个平行的梁形成，重物部分通过两个平行的梁连接到支撑框架部分。在两个相应的平行光束的表面上形成至少两个半导体应变计。半导体芯片可以包含在具有用于安装相对于用于安装封装的印刷电路板的表面的预定角度的半导体传感器芯片的主表面的封装中。主表面沿其两个相对侧设置有多个端子，用于连接半导体传感器芯片的输入/输出端子。垂直于主表面的底表面设置有多个插脚插入电路板的安装孔中。

37. 发明授权

US5987921A Method for making a semiconductor acceleration sensor 失效
标题翻译：制造半导体加速度传感器的方法
公开(公告)号：US5987921A
公开(公告)日：1999-11-23
申请号：US59341
申请日：1998-01-14
申请人： Katsumichi Ueyanagi
发明人： Katsumichi Ueyanagi
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/12 , G01P21/00 , H01L29/84 , C03C27/00
CPC分类号： G01P15/0802 , G01P15/12 , G01P15/122 , G01P21/00
摘要： A semiconductor acceleration sensor has a silicon detecting body and a glass substrate. The silicon detecting body has a weight, a supporting frame, and beams for coupling the weight to the supporting frame, which are integrally processed from a silicon wafer. At least one semiconductor strain gauge is formed on a surface of a beam. The glass substrate is electrostatically joined with the supporting frame of the silicon detecting body. Furthermore, a gap portion is formed between a surface of the glass substrate and a lower surface of the weight.
摘要翻译：半导体加速度传感器具有硅检测体和玻璃基板。硅检测体具有重量，支撑框架和用于将重物耦合到支撑框架的梁，其由硅晶片整体处理。在梁的表面上形成至少一个半导体应变片。玻璃基板与硅检测体的支撑框架静电连接。此外，在玻璃基板的表面和重量的下表面之间形成间隙部。

38. 发明授权

US5760290A Semiconductor acceleration sensor and testing method thereof 失效
标题翻译：半导体加速度传感器及其测试方法
公开(公告)号：US5760290A
公开(公告)日：1998-06-02
申请号：US553721
申请日：1995-10-23
申请人： Katsumichi Ueyanagi
发明人： Katsumichi Ueyanagi
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/12 , G01P21/00 , H01L29/84
CPC分类号： G01P15/0802 , G01P15/12 , G01P15/122 , G01P21/00
摘要： A semiconductor acceleration sensor has a silicon detecting body and a glass substrate. The silicon detecting body has a weight, a supporting frame, and beams for coupling the weight to the supporting frame, which are integrally processed from a silicon wafer. At least one semiconductor strain gauge is formed on a surface of a beam. The glass substrate is electrostatically joined with the supporting frame of the silicon detecting body. Furthermore, a gap portion is formed between a surface of the glass substrate and a lower surface of the weight.
摘要翻译：半导体加速度传感器具有硅检测体和玻璃基板。硅检测体具有重量，支撑框架和用于将重物耦合到支撑框架的梁，其由硅晶片整体处理。在梁的表面上形成至少一个半导体应变片。玻璃基板与硅检测体的支撑框架静电连接。此外，在玻璃基板的表面和重量的下表面之间形成间隙部。

39. 发明授权

US08304847B2 Semiconductor pressure sensor 有权
标题翻译：半导体压力传感器
公开(公告)号：US08304847B2
公开(公告)日：2012-11-06
申请号：US12092226
申请日：2005-11-01
申请人： Toshiaki Kaminaga , Masahide Hayashi , Katsumichi Ueyanagi , Kazunori Saito , Mutsuo Nishikawa
发明人： Toshiaki Kaminaga , Masahide Hayashi , Katsumichi Ueyanagi , Kazunori Saito , Mutsuo Nishikawa
IPC分类号： H01L29/02
CPC分类号： G01L15/00 , G01L19/0038 , G01L19/0084 , G01L19/0627 , G01L19/141 , G01L19/147 , H01L2224/05553 , H01L2224/45124 , H01L2224/45144 , H01L2224/48465 , H01L2924/01004 , H01L2924/01013 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/00
摘要： An object of the present invention is to solve problems in that aluminum electrodes, aluminum wires, and I/O terminals are corroded by corrosive gasses when a pressure of a pressure medium containing corrosive matters such as exhaust gas is measured with a semiconductor sensor; and improve not only the corrosion resistance of the sensor chip but also the corrosion resistance of the portion particularly functioning as the pressure receiver.Each of the aluminum electrodes that is likely to be corroded portions is prevented from being corroded by forming a titanium-tungsten layer and gold layer on the aluminum electrode. The connecting wires are prevented from being corroded by corrosive matters by using gold wires. The I/O terminals are also prevented from being corroded by applying gold plating.
摘要翻译：本发明的一个目的是解决当用半导体传感器测量含有废气等腐蚀性物质的压力介质的压力时，铝电极，铝线和I / O端子被腐蚀性气体腐蚀的问题。并且不仅提高了传感器芯片的耐腐蚀性，而且提高了作为压力容器特别起作用的部分的耐腐蚀性。通过在铝电极上形成钛 - 钨层和金层，可以防止可能被腐蚀部分的每个铝电极被腐蚀。通过使用金线防止连接线被腐蚀性物质腐蚀。也可以通过镀金来防止I / O端子被腐蚀。

40. 发明授权

US07525389B2 Signal amplifier circuit with a limiting voltage device 有权
标题翻译：信号放大电路具有极限电压装置
公开(公告)号：US07525389B2
公开(公告)日：2009-04-28
申请号：US11783327
申请日：2007-04-09
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
IPC分类号： H03F1/52
CPC分类号： H03F3/45 , G01D3/021 , G01D3/028 , G01L27/007
摘要： A signal amplifier circuit includes a negative feedback amplifier circuit having an output terminal, a first voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a second voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a first reference voltage supply applying a first reference voltage to the first voltage limiting device, a second reference voltage supply applying a second reference voltage to the second voltage limiting device. The first voltage limiting device is configured to fix a lower limit saturation voltage at the first reference voltage. The second voltage limiting device is configured to fix an upper limit saturation voltage at the second reference voltage.
摘要翻译：信号放大器电路包括具有输出端子的负反馈放大器电路，用于限制来自负反馈放大器电路的输出电压的第一电压限制装置，用于限制来自负反馈放大器电路的输出电压的第二电压限制装置，将第一参考电压施加到所述第一电压限制装置的第一参考电压源，向所述第二电压限制装置施加第二参考电压的第二参考电压电源。第一限压装置被配置为固定第一参考电压的下限饱和电压。第二电压限制装置被配置为将第二参考电压的上限饱和电压固定。

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