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    • 31. 发明授权
    • Display panel and method of manufacture
    • 显示面板及制造方法
    • US07446826B2
    • 2008-11-04
    • US11476316
    • 2006-06-27
    • Sung-In RoSang-Woo ParkDae-Cheol KimHyun-Young Kim
    • Sung-In RoSang-Woo ParkDae-Cheol KimHyun-Young Kim
    • G02F1/1333G02F1/1339
    • G02F1/13394
    • A display panel includes a first substrate, a second substrate, a connecting member and a strength-reinforcing member. The second substrate faces the first substrate, and includes a display area and a peripheral area surrounding the display area. The connecting member is disposed in the peripheral area to electrically connect the first substrate and the second substrate. The strength-reinforcing member protrudes from the second substrate and is disposed inside the connecting member. Thus, the strength-reinforcing member increases strength of the connecting member and stabilizes electrical connection between the first and second substrates, thereby improving display quality of a display device having the display panel.
    • 显示面板包括第一基板,第二基板,连接部件和强度增强部件。 第二基板面向第一基板,并且包括显示区域和围绕显示区域的周边区域。 连接构件设置在周边区域中以电连接第一基板和第二基板。 强化部件从第二基板突出并设置在连接部件的内部。 因此,强度增强部件提高连接部件的强度,并稳定第一和第二基板之间的电连接,从而提高具有显示面板的显示装置的显示质量。
    • 34. 发明申请
    • Semiconductor device including a gate electrode of lower electrical resistance and method of manufacturing the same
    • 包括具有较低电阻的栅电极的半导体器件及其制造方法
    • US20080048274A1
    • 2008-02-28
    • US11878096
    • 2007-07-20
    • Jung-Hun SeoHyun-Young KimJin-Gi Hong
    • Jung-Hun SeoHyun-Young KimJin-Gi Hong
    • H01L29/78H01L21/4763
    • H01L21/28061H01L29/4941
    • A semiconductor device may include a gate insulating layer on a semiconductor substrate, a polysilicon layer doped with impurities on the gate insulating layer, an interface reaction preventing layer on the polysilicon layer, a barrier layer on the interface reaction preventing layer, and a conductive metal layer on the barrier layer. The interface reaction preventing layer may reduce or prevent the occurrence of a chemical interfacial reaction with the barrier layer, and the barrier layer may reduce or prevent the diffusion of impurities doped to the polysilicon layer. The interface reaction preventing layer may include a metal-rich metal silicide having a metal mole fraction greater than a silicon mole fraction, so that the interface reaction preventing layer may reduce or prevent the dissociation of the barrier layer at higher temperatures. Thus, a barrier characteristic of a poly-metal gate electrode may be improved and surface agglomerations may be reduced or prevented.
    • 半导体器件可以包括在半导体衬底上的栅极绝缘层,在栅极绝缘层上掺杂有杂质的多晶硅层,多晶硅层上的界面反应防止层,界面反应防止层上的阻挡层和导电金属 层在阻挡层上。 界面反应防止层可以减少或防止与阻挡层的化学界面反应的发生,并且阻挡层可以减少或防止掺杂到多晶硅层的杂质的扩散。 界面反应防止层可以包括具有大于硅摩尔分数的金属摩尔分数的富金属的金属硅化物,使得界面反应防止层可以降低或防止在较高温度下阻挡层的解离。 因此,可以改善多金属栅电极的阻挡特性,并且可以减少或防止表面团聚。
    • 37. 发明授权
    • Heat exchanger
    • 热交换器
    • US5706885A
    • 1998-01-13
    • US603800
    • 1996-02-20
    • Hyun Young Kim
    • Hyun Young Kim
    • F28F1/32F28D1/053
    • F28F1/325
    • A heat exchanger is disclosed including a plurality of plate fins which are disposed in parallel at a predetermined interval and between which air flows; heat transfer tubes through which fluid runs; and a plurality of strips formed on the fins between nearby heat transfer tubes, the strips being divided into first strips formed on a center line connecting the centers of the nearby heat transfer tubes, and second strips opposingly disposed centering on the center line and formed along an ellipse having the center line in the direction of the line of apsides.
    • 公开了一种热交换器,其包括以预定间隔平行设置并且空气流动的多个板翅片; 流体通过的传热管; 以及形成在附近的传热管之间的散热片上的多个条,所述条被分成形成在连接附近的传热管的中心的中心线上的第一条和相对地设置在中心线上并沿着中心线形成的第二条 一条椭圆形的中心线在该线的方向上。
    • 38. 发明授权
    • Structure of heat exchanger
    • 热交换器结构
    • US5697432A
    • 1997-12-16
    • US580956
    • 1995-12-27
    • Jeom Yul YunHyun Young Kim
    • Jeom Yul YunHyun Young Kim
    • F28D1/04F28F1/32
    • F28F1/325Y10S165/502Y10S165/503
    • A heat exchanger structure is disclosed including: a plurality of heat exchange fins stacked at predetermined intervals for enhanced thermal conduction; heat transfer tubes perpendicularly penetrating the heat exchange fins so that coolant conveyed there through is heated or cooled; an intake side in which a plurality of slits are cut and raised from a reference surface of the fin in a central portion between the heat transfer tubes with angled edges so that air is directed to the heat transfer tube; and an outlet side having raised slits whose edges are disposed at a larger angle than the intake side, increasing the velocity of air flow passing through the periphery of the heat transfer tube to enhance heat exchange and thereby prevent the flow from being stagnated at the rear of the heat transfer tube.
    • 公开了一种热交换器结构,包括:以预定间隔堆叠的多个热交换翅片以增强热传导; 传热管垂直地穿透热交换散热片,使得在那里通过的冷却剂被加热或冷却; 吸入侧,其中多个狭缝在具有成角度的边缘的传热管之间的中心部分中从翅片的参考表面被切割和升起,使得空气被引导到传热管; 并且具有凸起的狭缝的出口侧,其边缘以比进气侧更大的角度设置,增加了通过传热管的周边的空气流的速度,以增强热交换,从而防止流动停滞在后部 的传热管。