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1. 发明申请

US20120119229A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20120119229A1
公开(公告)日：2012-05-17
申请号：US13159317
申请日：2011-06-13
申请人： Hyun-Young Kim , Sung-In Ro , Cheoll-Hee Jeon
发明人： Hyun-Young Kim , Sung-In Ro , Cheoll-Hee Jeon
IPC分类号： H01L33/62
CPC分类号： H01L27/1259 , G02F1/13458 , G02F1/136227 , G02F2001/136236 , H01L21/28008 , H01L21/283 , H01L21/4885 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array panel includes: a substrate including a display area and a drive region in which a driving chip for transmitting a driving signal to the pixels is located; a gate line in the display area; a storage electrode line; a gate driving pad coupled to the driving chip; a gate insulating layer; a first semiconductor layer on the gate insulating layer and overlapped with a gate electrode protruding from the gate line; a second semiconductor layer formed on the gate insulating layer and overlapped with a sustain electrode protruding from the storage electrode line; a data line crossing the gate line in an insulated manner and a drain electrode separated from the data line; and a pixel electrode coupled to the drain electrode, and the drain electrode comprises a drain bar facing the source electrode, and a drain extender overlapped with the second semiconductor layer.
摘要翻译：薄膜晶体管阵列面板包括：基板，包括显示区域和驱动区域，驱动区域中驱动信号发送到像素的驱动芯片; 显示区域中的栅极线; 存储电极线; 耦合到驱动芯片的栅极驱动焊盘; 栅极绝缘层; 栅极绝缘层上的第一半导体层，并与从栅极线突出的栅电极重叠; 形成在所述栅极绝缘层上并与从所述存储电极线突出的维持电极重叠的第二半导体层; 以绝缘方式与栅极线交叉的数据线和与数据线分离的漏电极; 以及耦合到所述漏电极的像素电极，并且所述漏电极包括面向所述源电极的漏极条和与所述第二半导体层重叠的漏极延伸器。

2. 发明授权

US08149365B2 Upper substrate and liquid crystal display device having the same 有权
标题翻译：上基板和具有相同的液晶显示装置
公开(公告)号：US08149365B2
公开(公告)日：2012-04-03
申请号：US12612974
申请日：2009-11-05
申请人： Bong-Ju Kim , Joo-Sun Yoon , Yong-Ho Yang , Seung-Gyu Tae , Jin-Suk Park , Hyun-Young Kim , Ji-Hye Moon
发明人： Bong-Ju Kim , Joo-Sun Yoon , Yong-Ho Yang , Seung-Gyu Tae , Jin-Suk Park , Hyun-Young Kim , Ji-Hye Moon
IPC分类号： G02F1/1333
CPC分类号： G02F1/13454 , G02F2001/133388 , G02F2202/42
摘要： A liquid crystal display apparatus includes a lower substrate, an upper substrate and a liquid crystal layer interposed between the lower substrate and the upper substrate. The lower substrate includes a display part for displaying image and a driving part for providing the display part with a driving signal. The upper substrate includes a common electrode and an insulating member that electrically insulates the common electrode from the driving part. The insulating member has a lower dielectric constant than the liquid crystal layer. Thus, a parasitic capacitance between the driving part and the common electrode is reduced to prevent malfunction of the driving part, and a display quality is enhanced.
摘要翻译：液晶显示装置包括下基板，上基板和插入在下基板和上基板之间的液晶层。下基板包括用于显示图像的显示部分和用于向显示部分提供驱动信号的驱动部分。上基板包括公共电极和使公共电极与驱动部分电绝缘的绝缘构件。绝缘部件的介电常数比液晶层低。因此，减小驱动部和公共电极之间的寄生电容，以防止驱动部的故障，提高显示质量。

3. 发明授权

US08125601B2 Upper substrate and liquid crystal display device having the same 有权
公开(公告)号：US08125601B2
公开(公告)日：2012-02-28
申请号：US10732380
申请日：2003-12-10
申请人： Bong-Ju Kim , Joo-Sun Yoon , Yong-Ho Yang , Seung-Gyu Tae , Jin-Suk Park , Hyun-Young Kim , Ji-Hye Moon
发明人： Bong-Ju Kim , Joo-Sun Yoon , Yong-Ho Yang , Seung-Gyu Tae , Jin-Suk Park , Hyun-Young Kim , Ji-Hye Moon
IPC分类号： G02F1/1333
CPC分类号： G02F1/13454 , G02F2001/133388 , G02F2202/42
摘要： A liquid crystal display apparatus includes a lower substrate, an upper substrate and a liquid crystal layer interposed between the lower substrate and the upper substrate. The lower substrate includes a display part for displaying image and a driving part for providing the display part with a driving signal. The upper substrate includes a common electrode and an insulating member that electrically insulates the common electrode from the driving part. The insulating member has a lower dielectric constant than the liquid crystal layer. Thus, a parasitic capacitance between the driving part and the common electrode is reduced to prevent malfunction of the driving part, and a display quality is enhanced.

4. 发明申请

US20110255044A1 DISPLAY DEVICE AND FABRICATION METHOD OF THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110255044A1
公开(公告)日：2011-10-20
申请号：US13019876
申请日：2011-02-02
申请人： Hyun-Young KIM , Joo-Sun YOON , Jin-Yup KIM
发明人： Hyun-Young KIM , Joo-Sun YOON , Jin-Yup KIM
IPC分类号： G02F1/1343
CPC分类号： H01L29/4908 , G02F1/1368 , H01L27/1255 , H01L29/42384
摘要： The embodiment relates to a display device having an improved aperture ratio and capacitance, and a fabrication method of the display device, in which the display device may include a thin film transistor, which includes: an active layer, a gate electrode, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and a gate insulating material formed between the active layer and the gate electrode, where the gate insulating material includes a first layer, a second layer and a third layer, where the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer, and where the third layer has a thickness between about 2 to about 12 times the thickness of the second layer.
摘要翻译：该实施例涉及具有改善的开口率和电容的显示装置，以及显示装置的制造方法，其中显示装置可以包括薄膜晶体管，其包括：有源层，栅电极，源电极电连接到有源层，电连接到有源层的漏电极和形成在有源层和栅电极之间的栅极绝缘材料，其中栅极绝缘材料包括第一层，第二层和第三层，其中所述第二层的厚度为所述第一层的厚度的约0.1至约1.5倍，并且其中所述第三层的厚度为所述第二层的厚度的约2至约12倍。

5. 发明申请

US20090098733A1 METHOD OF FORMING METAL LAYER USED IN THE FABRICATION OF SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件的制造中形成金属层的方法
公开(公告)号：US20090098733A1
公开(公告)日：2009-04-16
申请号：US12100374
申请日：2008-04-09
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/285
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

6. 发明授权

US07416981B2 Method of forming metal layer used in the fabrication of semiconductor device 有权
标题翻译：用于制造半导体器件的金属层的形成方法
公开(公告)号：US07416981B2
公开(公告)日：2008-08-26
申请号：US11245366
申请日：2005-10-05
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

7. 发明申请

US20080198310A1 DISPLAY SUBSTRATE AND DISPLAY PANEL HAVING THE SAME 审中-公开
标题翻译：显示基板和显示面板
公开(公告)号：US20080198310A1
公开(公告)日：2008-08-21
申请号：US12031078
申请日：2008-02-14
申请人： Hyun-Young Kim
发明人： Hyun-Young Kim
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/133504 , G02F1/13394
摘要： A display substrate includes a base substrate, a blocking portion formed on the base substrate dividing the base substrate into a plurality of pixel portions, wherein each of the pixel portions is divided into a reflective area and a transmissive area, a color filter layer formed in the pixel portions, and a distance maintaining member formed on the color filter layer in the reflective area.
摘要翻译：显示基板包括基底基板，形成在基底基板上的将基底基板划分为多个像素部分的阻挡部分，其中每个像素部分被分成反射区域和透射区域，滤色器层形成在像素部分和形成在反射区域中的滤色器层上的距离维持部件。

8. 发明申请

US20080198287A1 DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME, MOTHERBOARD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING A DISPLAY SUBSTRATE FOR THE SAME 有权
标题翻译：显示面板及其制造方法，用于制造它们的母板以及用于制造显示面板的显示基板的方法
公开(公告)号：US20080198287A1
公开(公告)日：2008-08-21
申请号：US12033645
申请日：2008-02-19
申请人： Hyun-Young Kim , Kwan-Wook Jung , Hyung-Don Na , Seung-Gyu Tae , Jung-Yun Kim
发明人： Hyun-Young Kim , Kwan-Wook Jung , Hyung-Don Na , Seung-Gyu Tae , Jung-Yun Kim
IPC分类号： H01L21/70 , H01L27/02 , G02F1/1368
CPC分类号： G02F1/13454 , G02F1/1339 , G02F2001/133357 , G02F2202/02
摘要： A display panel includes a first substrate, a thin-film transistor (TFT), an organic layer, a second substrate, a seal line, and a conductive pattern. The first substrate includes a pixel part and a driving part connected to the pixel part. The TFTs are formed in the pixel part and the driving part. The organic layer is formed on the first substrate having the TFTs formed thereon. The second substrate is opposite to the first substrate. The seal line is disposed between an edge portion of the first substrate having the organic layer formed thereon and an edge portion of the second substrate. The seal line combines the first substrate with the second substrate. The conductive pattern is disposed between the seal line and the organic layer.
摘要翻译：显示面板包括第一衬底，薄膜晶体管（TFT），有机层，第二衬底，密封线和导电图案。第一基板包括像素部分和连接到像素部分的驱动部分。 TFT形成在像素部分和驱动部分中。在其上形成有TFT的第一基板上形成有机层。第二基板与第一基板相对。密封线设置在其上形成有机层的第一基板的边缘部分和第二基板的边缘部分之间。密封线将第一基板与第二基板结合。导电图案设置在密封线和有机层之间。

9. 发明申请

US20080185624A1 STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件存储电容器
公开(公告)号：US20080185624A1
公开(公告)日：2008-08-07
申请号：US12100042
申请日：2008-04-09
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L29/94
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

10. 发明申请

US20080093603A1 LOWER SUBSTRATE, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：下基板，具有该基板的显示装置及其制造方法
公开(公告)号：US20080093603A1
公开(公告)日：2008-04-24
申请号：US11957734
申请日：2007-12-17
申请人： Hyun-Young KIM , Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae
发明人： Hyun-Young KIM , Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227 , H01L27/12
摘要： In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.
摘要翻译：在下基板中，具有下基板的显示装置和下基板的制造方法，下基板包括像素区域和电路区域。图像显示在像素区域中。第一信号电极设置在电路区域中。第一绝缘层包括第一信号电极暴露的开口。第二信号电极设置在电路区域中的第一绝缘层上，并与第一信号电极间隔开。第二绝缘层设置在第一绝缘层上，并且包括接触孔，第一和第二信号电极通过该接触孔露出。导电层将第一信号电极与第二信号电极电连接。因此，简化了制造工艺，使得下基板的产量增加。

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