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31. 发明授权

US07125797B2 Contact structure of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触结构及其形成方法
公开(公告)号：US07125797B2
公开(公告)日：2006-10-24
申请号：US10915538
申请日：2004-08-11
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/823814 , H01L21/26533 , H01L21/28506 , H01L21/823878 , H01L24/05 , H01L29/0847 , H01L29/78 , H01L2924/13091 , H01L2924/00
摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
摘要翻译：半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层在衬底中的导电掺杂层下面。

32. 发明授权

US07112862B2 Light emitting and/or detecting device and method of manufacturing the same 有权
标题翻译：发光和/或检测装置及其制造方法
公开(公告)号：US07112862B2
公开(公告)日：2006-09-26
申请号：US10965203
申请日：2004-10-15
申请人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
发明人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
IPC分类号： H01L31/00
CPC分类号： H01L31/107 , H01L31/105 , H01L33/34
摘要： A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the dopant of the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.
摘要翻译：提供一种发光和检测装置及其制造方法。该方法包括在掺杂有n型掺杂剂或p型掺杂剂的衬底上形成绝缘层，以及去除绝缘层的一部分以暴露衬底的预定区域; 通过在所述衬底的所述暴露区域上施加掺杂剂并对所述衬底进行热处理以在所述衬底和所述掺杂层之间的p-n结中产生光转换效应，从而在衬底的掺杂剂上形成掺杂有相反掺杂剂的掺杂层; 以及在所述衬底上形成第一和第二电极以电连接所述掺杂层。因此，可以将衬底中与衬底相反的掺杂剂的掺杂层的扩散深度控制。

33. 发明申请

US20060091268A1 Imaging device having stand connection 有权
标题翻译：具有立体连接的成像装置
公开(公告)号：US20060091268A1
公开(公告)日：2006-05-04
申请号：US11074158
申请日：2005-03-07
申请人： Eun-kyung Lee
发明人： Eun-kyung Lee
IPC分类号： H05K1/00
CPC分类号： H04M1/0214 , H04M1/0218 , H04M1/04 , H04M2250/52
摘要： Provided is an imaging device having a stand connector that can assume an open position for allowing connection with a stand or tripod and a closed position when not coupled with the stand. The stand connector of the imaging device includes a connector body including a hollow cavity and a female screw capable of coupling with a corresponding male screw of the stand, an insert received in the cavity of the connector body and moveable between an open position allowing coupling of the stand by screwing the screws of the connector body and the stand and a closed position substantially covering an open end of the cavity in the connector body when not coupling with the stand, and biasing means configured to bias the insert to the closed position.
摘要翻译：提供了一种成像装置，其具有支架连接器，该支架连接器可以在不与支架结合时呈现用于允许与支架或三脚架连接的关闭位置和关闭位置。成像装置的支架连接器包括连接器主体，其包括中空腔和能够与支架的相应的外螺纹连接的阴螺纹，插入件容纳在连接器本体的空腔中，并可在打开位置之间移动，通过旋转连接器主体和支架的螺钉，并且当与支架不联接时基本上覆盖连接器主体中的空腔的开口端的关闭位置以及被配置为将插入件偏置到关闭位置的偏置装置。

34. 发明授权

US06939950B2 Bovine tumor necrosis factor receptor-1 and methods of use 失效
标题翻译：牛肿瘤坏死因子受体-1及其使用方法
公开(公告)号：US06939950B2
公开(公告)日：2005-09-06
申请号：US09970532
申请日：2001-10-03
申请人： Michael J. Taylor , Marcus E. Kehrli, Jr. , Eun-Kyung Lee , Simon Mwangi
发明人： Michael J. Taylor , Marcus E. Kehrli, Jr. , Eun-Kyung Lee , Simon Mwangi
IPC分类号： C07K14/705 , C07K14/715 , C07H21/04
CPC分类号： C07K14/70575
摘要： The invention relates to nucleic acid sequences encoding a bovine tumor necrosis factor receptor-I (TNF-RI). Also within the invention is a soluble bovine TNF-RI, which is a potent inhibitor of bovine tumor necrosis factor-α (TNF-α). The invention demonstrates that soluble bovine TNF-RI has therapeutic value as an inhibitor of TNF in cattle suffering from coliform mastitis or other inflammatory disease.
摘要翻译：本发明涉及编码牛肿瘤坏死因子受体-I（TNF-RI）的核酸序列。本发明还有一种可溶性牛TNF-RI，其是牛肿瘤坏死因子-α（TNF-α）的有效抑制剂。本发明表明，可溶性牛TNF-RI具有作为大肠杆菌性乳腺炎或其它炎性疾病的牛的TNF抑制剂的治疗价值。

35. 发明申请

US20050156152A1 Flat panel display using silicon light-emitting device 有权
标题翻译：平板显示器采用硅发光器件
公开(公告)号：US20050156152A1
公开(公告)日：2005-07-21
申请号：US10752560
申请日：2004-01-08
申请人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
发明人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
IPC分类号： G09G3/28 , H01L27/15 , H01L31/0328
CPC分类号： H01L27/156
摘要： A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silicon light-emitting device panel and emitting visible light after being excited by light emitted from the silicon light-emitting devices, wherein each of the silicon light-emitting devices comprises: a doping region formed on a surface of the substrate in such a way that the substrate is doped with a predetermined dopant of the opposite type to the substrate to a depth so that recombination of electron-hole pairs by quantum confinement effect at a p-n junction leads to light emission; and electrodes patterned on the substrate to allow the silicon light-emitting devices to emit light according to an image signal. The flat panel display includes the low-priced silicon light-emitting device panel having a two dimensional array of the silicon light-emitting devices formed on the inexpensive silicon-based substrate through series semiconductor manufacture processes. Therefore, the flat panel display can be manufactured at low cost. Furthermore, unlike a plasma display panel, a high voltage or a gas sealing process for discharge is not required, thereby increasing stability and reliability.
摘要翻译：提供平板显示器。平板显示器包括具有形成在n型或p型硅基衬底上的硅发光器件的二维阵列的硅发光器件面板和形成在硅的前表面上的荧光层发光器件面板，并且在从所述硅发光器件发射的光激发之后发射可见光，其中每个所述硅发光器件包括：在所述衬底的表面上形成的掺杂区域，衬底以与衬底相反的类型的预定掺杂剂掺杂到深度，使得通过在pn结处的量子限制效应的电子 - 空穴对的复合导致发光; 以及在基板上图案化的电极，以允许硅发光器件根据图像信号发光。平板显示器包括具有通过串联半导体制造工艺在便宜的硅基基板上形成的硅发光器件的二维阵列的低价硅发光器件面板。因此，可以以低成本制造平板显示器。此外，与等离子体显示面板不同，不需要用于放电的高电压或气体密封处理，从而提高稳定性和可靠性。

36. 发明授权

US06778578B2 Multi-wavelength surface emitting laser and method for manufacturing the same 失效
标题翻译：多波长表面发射激光器及其制造方法
公开(公告)号：US06778578B2
公开(公告)日：2004-08-17
申请号：US09835319
申请日：2001-04-17
申请人： Eun-kyung Lee , Min-hyung Chung
发明人： Eun-kyung Lee , Min-hyung Chung
IPC分类号： H01S310
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18344 , H01S5/18361 , H01S5/2063 , H01S5/4087
摘要： A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.
摘要翻译：用于发射具有不同波长的光的多波长表面发射激光器包括在一个基板上一体形成的下反射器，有源层和上反射器。通过形成第一表面发射激光器，通过蚀刻部分地去除第一上反射器，第一有源层和第一下反射层来制造多波长表面发射激光器。在第一表面发射激光器的外表面上形成保护膜。通过蚀刻除去形成在保护膜上的第二下反射器，第二有源层和第二上反射层，形成第二表面发射激光器。去除保护膜，分别在第一和第二上反射层的上表面上形成第一和第二上电极，并且在基板的底表面上形成下电极。

37. 发明授权

US09694034B2 Artificial cartilage containing chondrocytes obtained from costal cartilage and preparation process thereof 有权
公开(公告)号：US09694034B2
公开(公告)日：2017-07-04
申请号：US12159204
申请日：2006-10-31
申请人： Young Sook Son , Jung Sun Lee , Eun Kyung Lee , Jin Yeon Lee
发明人： Young Sook Son , Jung Sun Lee , Eun Kyung Lee , Jin Yeon Lee
IPC分类号： C12N15/86 , A61K35/28 , A61K35/32 , C12N5/077 , C12N5/0775 , A61L27/20 , A61L27/38 , A61K35/12
CPC分类号： A61K35/28 , A61K35/12 , A61K35/32 , A61L27/20 , A61L27/3804 , A61L27/3852 , A61L2430/06 , C12N5/0655 , C12N5/0668 , C12N2501/115 , C08L5/08
摘要： The present invention relates to an artificial cartilage containing mesenchymal stem cell (MSC)-like dedifferentiated cells obtained by passage culturing costal chondrocytes, and a preparation process thereof.

38. 发明授权

US08860041B2 Method for producing nanowires using a porous template 有权
标题翻译：使用多孔模板生产纳米线的方法
公开(公告)号：US08860041B2
公开(公告)日：2014-10-14
申请号：US13099768
申请日：2011-05-03
申请人： Byoung Lyong Choi , Jong Min Kim , Eun Kyung Lee
发明人： Byoung Lyong Choi , Jong Min Kim , Eun Kyung Lee
IPC分类号： H01L33/00 , H01L29/06 , B82Y10/00 , C30B29/60
CPC分类号： H01L29/0665 , B82Y10/00 , C30B29/60 , H01L29/0673 , H01L29/0676 , Y10T428/249994
摘要： Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle precursors into nanowires. According to the method, highly rectilinear and well-ordered nanowires can be produced in a simple manner.
摘要翻译：本文公开了一种生产纳米线的方法。该方法包括以下步骤：提供具有管形式的多个孔的多孔模板，用纳米颗粒或纳米颗粒前体填充管，并将填充的纳米颗粒或纳米颗粒前体形成纳米线。根据该方法，可以以简单的方式制备高度直线和有序的纳米线。

39. 发明授权

US08853938B2 Inorganic electroluminescent device comprising an insulating layer, method for fabricating the electroluminescent device and electronic device comprising the electroluminescent device 有权
标题翻译：包含绝缘层的无机电致发光器件，用于制造电致发光器件的方法和包括该电致发光器件的电子器件
公开(公告)号：US08853938B2
公开(公告)日：2014-10-07
申请号：US11753129
申请日：2007-05-24
申请人： Kyung Sang Cho , Byoung Lyong Choi , Jae Ho You , Eun Kyung Lee
发明人： Kyung Sang Cho , Byoung Lyong Choi , Jae Ho You , Eun Kyung Lee
IPC分类号： H05B33/02 , H05B33/22
CPC分类号： H05B33/22
摘要： Disclosed is an inorganic electroluminescent device. The inorganic electroluminescent device comprises a hole transport layer, a light-emitting layer, an inorganic electron transport layer and an electron injecting electrode sequentially formed on a hole injecting electrode wherein an insulating layer is formed between the electron injecting electrode and the inorganic electron transport layer.Further disclosed are a method for fabricating the electroluminescent device and an electronic device comprising the electroluminescent device.The inorganic electroluminescent device achieves uniform light emission from the entire light-emitting surface of the device, resulting in an improvement in the reliability and stability of the device. The inorganic electroluminescent device is suitable for use in the manufacture of electronic devices, including display devices, illuminators and backlight units.
摘要翻译：公开了一种无机电致发光器件。无机电致发光器件包括顺序形成在空穴注入电极上的空穴传输层，发光层，无机电子传输层和电子注入电极，其中在电子注入电极和无机电子传输层之间形成绝缘层。进一步公开的是制造电致发光器件的方法和包括电致发光器件的电子器件。无机电致发光器件实现了来自器件的整个发光表面的均匀发光，从而提高了器件的可靠性和稳定性。无机电致发光器件适用于电子设备的制造，包括显示设备，照明器和背光单元。

40. 发明授权

US08513101B2 Method of synthesizing nanowires 有权
标题翻译：纳米线合成方法
公开(公告)号：US08513101B2
公开(公告)日：2013-08-20
申请号：US12560768
申请日：2009-09-16
申请人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
发明人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02532 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L21/02603 , H01L21/0262 , H01L21/02639
摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
摘要翻译：一种合成纳米线的方法。该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线）方法。

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