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21. 发明申请

WO1997032377A1 BURIED HETEROSTRUCTURE 审中-公开
公开(公告)号：WO1997032377A1
公开(公告)日：1997-09-04
申请号：PCT/SE1997000317
申请日：1997-02-25
申请人： TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
发明人： TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) , ÖHLANDER, Ulf , RASK, Michael , STOLTZ, Björn
IPC分类号： H01S03/19
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/2205 , H01S5/2224 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/3434 , H01S2301/173
摘要： An epitaxially grown semiconductor heterostructure has an inner region (5) which is substantially laterally confined by confinement regions (9) and has enhanced transverse confinement by enhanced transverse confinement layers (3, 7). The latter layers are not exposed outside the growth chamber during processing, by stopping the etching for producing the lateral confinement, above the lower enhanced transverse confinement layer (3) and growing such an upper layer (7) after making the lateral confinement regions (9). The structure is intended to be used in particular having the inner region act as an active laser region, for instance in InP-based 1.3 mu m wavelength lasers. Then the simultaneous lateral confinement, enhanced transverse confinement and exposure protection enables simultaneously a low threshold current, a small temperature sensitivity and reliable, long life operation. The enhanced transverse confinement layers (3, 7) could comprise aluminium protected from oxidation during processing. Such a laser will then be protected from a declined reliability.
摘要翻译：外延生长的半导体异质结构具有通过约束区域（9）基本上横向限制的内部区域（5），并且通过增强的横向限制层（3,7）具有增强的横向约束。后者层在加工过程中不会暴露在生长室的外部，通过停止用于产生横向限制的蚀刻，在较低增强的横向限制层（3）上方，并且在制造横向限制区域（9）之后生长这样的上层（7））。该结构特别用于具有内部区域用作有源激光区域，例如在基于InP的1.3μm波长激光器中。然后同时的侧向约束，增强的横向约束和曝光保护能够同时具有低阈值电流，小的温度灵敏度和可靠的长寿命操作。增强的横向限制层（3,7）可以包括在加工期间防止氧化的铝。这样的激光器将被保护免受可靠性的降低。

22. 发明申请

WO1996008062A1 HIGH POWER LASER DIODE 审中-公开
标题翻译：高功率激光二极管
公开(公告)号：WO1996008062A1
公开(公告)日：1996-03-14
申请号：PCT/RO1995000011
申请日：1995-08-18
申请人： PETRESCU-PRAHOVA, Iulian, Basarab , BUDA, Manuela , VLAICU, Aurel-Mihai
IPC分类号： H01S03/19
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/2275
摘要： The invention describes a high power laser diode with potential use in ophthalmology, surgery, printing, magneto-optical data storage. The solution proposes the use of a balance region (6) to attract the maximum of the optical field outside the active region (5). In this way, low confinement laser-diode structures are obtained with confinement factor less than 0.015 and thicknesses of the active region greater than 0.01 mu m, which allows the reliable and efficient operation of high power laser diodes, for high values of the injection current, in the fundamental transversal and lateral mode. To limit the two-photon absorption in the regions with low energy gap, others than the active region, the confinement factors for these regions are also low.
摘要翻译：本发明描述了一种可用于眼科，手术，印刷，磁光数据存储的大功率激光二极管。该解决方案提出使用平衡区域（6）来吸引有源区域（5）外部的光场的最大值。以这种方式，获得低约束激光二极管结构，其约束因子小于0.015，有源区的厚度大于0.01μm，这使得高功率激光二极管的可靠和有效的操作，注入电流的高值，在基本的横向和横向模式。为了限制具有低能隙的区域中的双光子吸收，除了有效区域之外，这些区域的约束因子也较低。

23. 发明申请

WO1994007287A1 IMPROVED SEMICONDUCTOR ARCHITECTURE AND APPLICATION THEREFOR 审中-公开
标题翻译：改进的半导体结构及其应用
公开(公告)号：WO1994007287A1
公开(公告)日：1994-03-31
申请号：PCT/US1993008845
申请日：1993-09-17
申请人： KRISSMAN, Stephen , INTEGRATED DATA SYSTEMS, INC. , GORELIK, Vladimir
发明人： KRISSMAN, Stephen , INTEGRATED DATA SYSTEMS, INC.
IPC分类号： H01S03/19
CPC分类号： H04N5/335 , G02B6/43 , H01L2924/0002 , H01S5/02248 , H01S5/02284 , H01S5/4025 , H01L2924/00
摘要： Semiconductor electronics is provided wherein basic semiconductor elements (BSEs) are fabricated on the surfaces of hollow, cone-shaped and/or other planar or non-planar substrate (104). Photosensitive and photoemitting elements are included within each BSE capable of transmitting and receiving signals to and from external sources in a direction that is non-parallel to the silicon surface and circuitry plane. The BSEs may be assembled in arrangement whereby some number of BSEs are located adjacent and surrounding another "polar" BSE, thereby providing for short opto-eletronic connections between the polar BSE and its neighbor. In additional embodiments, a power (401) may reside within the internal space of the BSE, thereby providing power to the BSEs. Cooling is provided by transferring coolant within conduits (403) into the interior of each BSE, through the power supply and between the exterior of the internal power supply and the substrate.
摘要翻译：提供了半导体电子器件，其中基本半导体元件（BSE）制造在中空的，锥形的和/或其他平面或非平面的衬底（104）的表面上。每个BSE中都包含光敏和光发射元件，能够在与硅表面和电路平面不平行的方向上向外部源发送和接收信号。 BSE可以以布置方式组装，由此一些数量的BSE位于邻近并围绕另一“极性”BSE，从而提供极性BSE与其邻居之间的短的光电连接。在另外的实施例中，功率（401）可以驻留在BSE的内部空间内，从而向BSE提供电力。通过将导管（403）内的冷却剂通过电源并在内部电源和基板的外部之间传送到每个BSE的内部来提供冷却。

24. 发明申请

WO1993024979A1 II-VI LASER DIODES WITH QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY AND MIGRATION ENHANCED EPITAXY 审中-公开
标题翻译： II-VI激光二极管，具有原子层外延和迁移增强外延产生的量子阱
公开(公告)号：WO1993024979A1
公开(公告)日：1993-12-09
申请号：PCT/US1993004668
申请日：1993-05-14
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： MINNESOTA MINING AND MANUFACTURING COMPANY , CHENG, Hwa , DEPUYDT, James, M. , HAASE, Michael, A. , QIU, Jun
IPC分类号： H01S03/19
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02395 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02491 , H01L21/02507 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L33/0087 , H01L2924/0002 , H01S5/3403 , H01S5/3406 , H01S5/342 , H01L2924/00
摘要： A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200 DEG C in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe)m(ZnSe)n]p where m, n and p are integers.
摘要翻译：使用原子层外延（ALE）和/或迁移增强外延（MEE）来生长II-VI激光二极管中的高效量子阱的方法。激光二极管的衬底和先前生长的层在MBE室中被加热到小于或等于约200℃的温度。将Cd，Zn和Se的来源交替注入室内，以生长包括Cd，Zn和Se的单层膜的短周期应变层超晶格（SPSLS）量子阱层。量子阱层由符号[（CdSe）m（ZnSe）n] p描述，其中m，n和p是整数。

25. 发明申请

WO1993022813A1 VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES 审中-公开
标题翻译：具有内部结构的垂直孔表面发射激光
公开(公告)号：WO1993022813A1
公开(公告)日：1993-11-11
申请号：PCT/US1993004293
申请日：1993-05-06
申请人： BANDGAP TECHNOLOGY CORPORATION
发明人： BANDGAP TECHNOLOGY CORPORATION , JEWELL, Jack, L. , OLBRIGHT, Gregory, R.
IPC分类号： H01S03/19
CPC分类号： H01S5/18308 , H01S5/0421 , H01S5/0425 , H01S5/18316 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/18394 , H01S5/2063 , H01S5/2205 , H01S5/2224 , H01S2301/166
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding region. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.

26. 发明申请

WO1993022812A1 INTEGRATED SEMICONDUCTOR LASER WITH ELECTRONIC DIRECTIVITY AND FOCUSING CONTROL 审中-公开
标题翻译：具有电子方向性和聚焦控制的集成半导体激光器
公开(公告)号：WO1993022812A1
公开(公告)日：1993-11-11
申请号：PCT/US1993003958
申请日：1993-04-28
申请人： THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF ...
发明人： THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF ... , CHANG, Sheldon, S., L.
IPC分类号： H01S03/19
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/0624 , H01S5/06243 , H01S5/10 , H01S5/20 , H01S5/4075 , H01S5/50
摘要： An integrated semiconductor laser device (A, B, C) includes electronic direction and focusing control. The integrated semiconductor laser device (A, B, C) may be used for either transmitting output laser beams or as a laser amplifier for receiving incoming laser beams. The direction and focusing control of the device operates by applying electric current to electrodes coupled to an active channel (2, 3) within an extension chamber of the integrated semiconductor laser device. The applied currents inject a minority carrier density distribution into the active channel (2, 3). Since the speed of light within a semiconductor changes with minority carrier density distribution, a laser beam wave front may be shaped by the injected minority carrier density distribution to direct and/or focus a laser light beam. The direction and focusing control is completely integrated within the semiconductor laser device and time constants for the electronic direction and focusing control are in nanoseconds.

27. 发明申请

WO1993009582A1 VISIBLE LIGHT SURFACE EMITTING SEMICONDUCTOR LASER 审中-公开
标题翻译：可见光表面发射半导体激光
公开(公告)号：WO1993009582A1
公开(公告)日：1993-05-13
申请号：PCT/US1992009535
申请日：1992-11-06
申请人： BANDGAP TECHNOLOGY CORPORATION
发明人： BANDGAP TECHNOLOGY CORPORATION , BRYAN, Robert, P. , OLBRIGHT, Gregory, R. , LOTT, James, A. , SCHNEIDER, Richard, P. , JEWELL, Jack, L.
IPC分类号： H01S03/19
CPC分类号： B82Y20/00 , H01S5/041 , H01S5/18308 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S5/3215 , H01S5/32308 , H01S5/32325 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347 , H01S2302/00
摘要： A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers (20, 40) surrounding one or more active, optically emitting quantum-well layers (30) having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m μ/2neff where m is an integer, μ is the free-space wavelength of the laser radiation and neff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror (10) and substrate (60) to one conductivity-type and heavily doping regions of the upper mirror (50) with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

28. 发明申请

WO1990015461A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO1990015461A1
公开(公告)日：1990-12-13
申请号：PCT/GB1990000884
申请日：1990-06-07
申请人： BT&D TECHNOLOGIES LIMITED , PLUMB, Richard, G.
发明人： BT&D TECHNOLOGIES LIMITED
IPC分类号： H01S03/19
CPC分类号： H01S5/20 , H01L33/0062 , H01S5/2059 , H01S5/22
摘要： A semiconductor device for amplifying radiation comprises an n-type substrate (1), a p-type layer (3) between which is located an active layer (2). Portions of the p-type layer (3) are removed by an etching process to create a central contact portion (11). Typically, the p-type layer portions are removed by an etching process in combination with a photoresist mask deposited on the top surface of the p-type layer (3). By using an etching process the contact portion can be shaped so that the photoresist layer then overhangs the contact portion (11). N-type ions are then implanted into the active layer (2) where the p-type layer (3) has been removed and the overhanging photoresist layer (4) creates non-implanted regions (10) in the active layer (20) which separates the implanted regions (8, 9) from the contact portion (11). The implanted regions (8, 9) have the effect of creating a potential barrier between the non-implanted regions of the first layer and the implanted regions and this prevents current injected into the contact portion (11) from spreading horizontally in the active layer (2).
摘要翻译：用于放大辐射的半导体器件包括n型衬底（1），其中位于有源层（2）之间的p型层（3）。通过蚀刻工艺去除p型层（3）的部分以形成中心接触部分（11）。通常，通过与沉积在p型层（3）的顶表面上的光刻胶掩模组合的蚀刻工艺去除p型层部分。通过使用蚀刻工艺，可以使接触部分成形，使得光致抗蚀剂层然后悬垂在接触部分（11）上。然后将N型离子注入已去除p型层（3）的有源层（2）中，并且悬垂光致抗蚀剂层（4）在有源层（20）中产生非注入区域（10），将注入区域（8,9）与接触部分（11）分离。注入区域（8,9）具有在第一层的非注入区域和注入区域之间产生势垒的作用，并且防止注入到接触部分（11）中的电流在有源层中水平扩展（ 2）。

29. 发明申请

WO1990004275A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO1990004275A1
公开(公告)日：1990-04-19
申请号：PCT/US1989004377
申请日：1989-10-10
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , HAYAKAWA, Toshiro
IPC分类号： H01S03/19
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01S5/2004 , H01S5/223 , H01S5/3211 , H01S5/34306 , H01S5/34326
摘要： A semiconductor light-emitting device is provided with optical guide layers that include at least part of compositionally graded layers provided adjacent to the light-emitting layer, and at least one end of the compositionally graded layers is provided with a bridging layer wherein the first derivative of each composition profile with respect to the layer thickness is continuous. This provides an extremely smooth change of composition from one layer to the next, and eliminates problems such as overshoot and undershoot, and can be accomplished using a general control system based on PID.
摘要翻译：半导体发光器件设置有光导层，其包括邻近发光层设置的组成梯度层的至少一部分，并且组成梯度层的至少一端设置有桥接层，其中第一衍生物每个组成轮廓相对于层厚度是连续的。这提供了从一层到下一层的组合的非常平滑的变化，并且消除了诸如过冲和下冲的问题，并且可以使用基于PID的通用控制系统来实现。

30. 发明申请

WO1987006398A1 SEMICONDUCTOR LASER FABRICATION 审中-公开
标题翻译：半导体激光制造
公开(公告)号：WO1987006398A1
公开(公告)日：1987-10-22
申请号：PCT/US1987000279
申请日：1987-02-06
申请人： BELL COMMUNICATIONS RESEARCH, INC.
发明人： BELL COMMUNICATIONS RESEARCH, INC. , YABLONOVITCH, Eli
IPC分类号： H01S03/19
CPC分类号： B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition AlxGal-xAs of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition InyGa1-yAs on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition AlxGal-xAs and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.
摘要翻译：一种通过在衬底上沉积具有第一导电类型的组成Al x Ga 1-x As的第一半导体材料层和用于量子限制的薄的第二半导体材料层来制造具有第一导电类型的砷化镓衬底的半导体激光器的方法，组成InyGa1-yAs在第一层。该层在半导体结构中经历足够的应变，以便使阈值电流密度最小化。通过在第二层上沉积具有组成Al x Ga 1-x As和第二导电类型的第三层半导体材料并在第三层上沉积具有组成为GaAs并具有第二导电类型的第四层半导体材料来完成该器件。

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