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    • 23. 发明申请
    • OPERATIONAL AMPLIFIER AND PIPELINE AD CONVERTER
    • 操作放大器和管道AD转换器
    • US20110175759A1
    • 2011-07-21
    • US13079259
    • 2011-04-04
    • Daisuke NOMASAKIKoji Oka
    • Daisuke NOMASAKIKoji Oka
    • H03M1/02
    • H03F3/45183H01L27/0629H01L27/0811H01L27/088H03F2203/45352H03F2203/45371H03F2203/45486H03M1/0682H03M1/0695H03M1/442
    • A differential voltage interconnect (W101a) electrically connects the gate electrode of a transistor to be used among differential transistors (T101a, T101a, . . . ) to an input node receiving an input voltage (Vinn), and a differential voltage interconnect (W101b) electrically connects the gate electrode of a transistor to be used among differential transistors (T101b, T101b, . . . ) to an input node receiving an input voltage (Vinp). A bias voltage interconnect (W102) electrically connects the gate electrode of a transistor to be used among current source transistors (T102, T102, . . . ) to a bias node receiving a bias voltage (VBN), and a bias voltage interconnect (W103) electrically connects the gate electrodes of transistors to be used among load transistors (T103a, T103a, . . . , T103b, T103b, . . . ) to a bias node receiving a bias voltage (VBP).
    • 差分电压互连(W101a)将要用于差分晶体管(T101a,T101a ...等)的晶体管的栅极电连接到接收输入电压(Vinn)的输入节点和差分电压互连(W101b) 将待使用的晶体管的栅电极(T101b,T101b ...)电连接到接收输入电压(Vinp)的输入节点。 偏置电压互连(W102)将要用于电流源晶体管(T102,T102 ......)中的晶体管的栅极电连接到接收偏置电压(VBN)的偏置节点和偏置电压互连(W103) )将负载晶体管(T103a,T103a,...,T103b,T103b ...等)中使用的晶体管的栅极电连接到接收偏置电压(VBP)的偏置节点。
    • 24. 发明授权
    • Operational amplifier and pipeline AD converter
    • 运算放大器和管线AD转换器
    • US07940121B2
    • 2011-05-10
    • US12445003
    • 2008-07-30
    • Daisuke NomasakiKoji Oka
    • Daisuke NomasakiKoji Oka
    • H03F3/45
    • H03F3/45183H01L27/0629H01L27/0811H01L27/088H03F2203/45352H03F2203/45371H03F2203/45486H03M1/0682H03M1/0695H03M1/442
    • A differential voltage interconnect (W101a) electrically connects the gate electrode of a transistor to be used among differential transistors (T101a, T101a, . . . ) to an input node receiving an input voltage (Vinn), and a differential voltage interconnect (W101b) electrically connects the gate electrode of a transistor to be used among differential transistors (T101b, T101b, . . . ) to an input node receiving an input voltage (Vinp). A bias voltage interconnect (W102) electrically connects the gate electrode of a transistor to be used among current source transistors (T102, T102, . . . ) to a bias node receiving a bias voltage (VBN), and a bias voltage interconnect (W103) electrically connects the gate electrodes of transistors to be used among load transistors (T103a, T103a, . . . , T103b, T103b, . . . ) to a bias node receiving a bias voltage (VBP).
    • 差分电压互连(W101a)将要用于差分晶体管(T101a,T101a ...等)的晶体管的栅极电连接到接收输入电压(Vinn)的输入节点和差分电压互连(W101b) 将待使用的晶体管的栅电极(T101b,T101b ...)电连接到接收输入电压(Vinp)的输入节点。 偏置电压互连(W102)将要用于电流源晶体管(T102,T102 ......)中的晶体管的栅极电连接到接收偏置电压(VBN)的偏置节点和偏置电压互连(W103 )将负载晶体管(T103a,T103a,...,T103b,T103b ...等)中使用的晶体管的栅极电连接到接收偏置电压(VBP)的偏置节点。
    • 28. 发明授权
    • Temperature compensated feedforward linearizer
    • 温度补偿前馈线性化器
    • US08514020B2
    • 2013-08-20
    • US13220339
    • 2011-08-29
    • Thomas E. Collins, IIIGregory M. Flewelling
    • Thomas E. Collins, IIIGregory M. Flewelling
    • H03F1/00H03F3/04
    • H03F1/3211H03F3/45089H03F3/45484H03F2200/447H03F2203/45486H03F2203/45504
    • A feedforward linearizer device is disclosed. The device includes a main amplifier, and a linearizing amplifier operatively coupled to the main amplifier. A first reference generator is operatively coupled to the main amplifier by a first reference node. A second reference generator is operatively coupled to the linearizing amplifier by a second reference node, and is configured to cause an optimal linearizing amplifier output current for each of a plurality of temperatures. In one such case, the second reference generator is configured to cause an optimal linearizing amplifier output current for each of a plurality of temperatures based on a corresponding optimal ratio of main amplifier output current and linearizing amplifier output current. The linearizing amplifier may be configured with a tunable current source that is controlled by the second reference generator, or a current source having a fixed total transistor area (not tunable).
    • 公开了一种前馈线性化装置。 该器件包括主放大器和可操作地耦合到主放大器的线性放大器。 第一参考发生器通过第一参考节点可操作地耦合到主放大器。 第二参考发生器通过第二参考节点可操作地耦合到线性化放大器,并且被配置为为多个温度中的每一个引起最佳的线性化放大器输出电流。 在一种这种情况下,第二参考发生器被配置为基于主放大器输出电流和线性化放大器输出电流的对应最佳比率,为多个温度中的每一个引起最佳线性化放大器输出电流。 线性化放大器可以配置有由第二参考发生器控制的可调电流源,或者具有固定的总晶体管面积(不可调)的电流源。
    • 30. 发明授权
    • Methods, design structures, and systems for current mode logic (CML) differential driver ESD protection circuitry
    • 电流模式逻辑(CML)差分驱动器ESD保护电路的方法,设计结构和系统
    • US07826188B2
    • 2010-11-02
    • US12140485
    • 2008-06-17
    • Robert J. Gauthier, Jr.Junjun LiAnkit Srivastava
    • Robert J. Gauthier, Jr.Junjun LiAnkit Srivastava
    • H02H9/00H01C7/12H02H1/00H02H1/04H02H3/22H02H9/06
    • H03F3/45188H01L27/0251H03F1/52H03F1/523H03F2203/45466H03F2203/45486H03F2203/45504
    • A hardware description language (HDL) design structure encoded on a machine readable data storage medium, the HDL design comprising elements that when processed in a computer aided design system generates a machine executable representation of a device for implementing dynamic refresh protocols for DRAM based cache. The HDL design structure further comprises an integrated circuit having a differential driver, comprising: a first driver and a second driver forming the differential driver, the drivers are coupled in parallel between a first voltage source and a second voltage source; a first switch coupled to the first driver and configured to turn off the first driver during an ESD event such that the first driver sustains stress during the ESD event; and a second switch coupled to the second driver and configured to turn off the second driver during the ESD event such that the second driver sustains stress during the ESD event.
    • 在机器可读数据存储介质上编码的硬件描述语言(HDL)设计结构,所述HDL设计包括在计算机辅助设计系统中处理时的元件,生成用于实现基于DRAM的高速缓存的动态刷新协议的设备的机器可执行表示。 HDL设计结构还包括具有差分驱动器的集成电路,包括:形成差分驱动器的第一驱动器和第二驱动器,驱动器并联耦合在第一电压源和第二电压源之间; 第一开关,其耦合到所述第一驱动器并且被配置为在ESD事件期间关闭所述第一驱动器,使得所述第一驱动器在所述ESD事件期间保持应力; 以及耦合到所述第二驱动器并被配置为在所述ESD事件期间关闭所述第二驱动器的第二开关,使得所述第二驱动器在所述ESD事件期间维持应力。