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    • 25. 发明授权
    • Method of producing a biocompatible prosthesis
    • 制备生物相容性假体的方法
    • US5849206A
    • 1998-12-15
    • US794375
    • 1997-02-04
    • Michael AmonArmin Bolz
    • Michael AmonArmin Bolz
    • A61F2/00A61F2/82A61L27/30A61L31/08A61L33/02C23C16/02C23C16/32H01L21/308
    • A61F2/82A61L27/306A61L31/088A61L33/027C23C16/0245C23C16/0272C23C16/325A61F2/0077A61F2240/001A61F2310/00742
    • A method of producing a biocompatible prosthesis based on a substrate made essentially of metal or ceramic. The substrate is placed into a reactor chamber of a cathodic vapor deposition arrangement and the chamber is evacuated to a predetermined pressure. A predetermined, negative bias voltage is then applied to the substrate and the substrate is surface treated by adding an etching gas to the reactor chamber, at a predetermined, first flow rate and coupling in a high frequency power with a first, predetermined power density for ionic etching for a first, predetermined period of time. The surface treated substrate is separated from the negative bias voltage and a semiconductor cover layer is chemical vapor-phase deposited on the substrate by adding to the reactor chamber a multi-component mixture of process gases containing a semiconductor element in bound form at a second, predetermined flow rate and coupling-in of HF power with a predetermined, second power density, for a second, predetermined time period.
    • 一种生产基于由金属或陶瓷制成的基底的生物相容性假体的方法。 将衬底放置在阴极气相沉积装置的反应室中,并将室抽真空至预定压力。 然后将预定的负偏置电压施加到衬底,并且通过以预定的第一流量向反应器室中加入蚀刻气体并以高频功率与第一预定功率密度耦合来对衬底进行表面处理,用于 离子蚀刻第一预定时间段。 将经表面处理的衬底与负偏压分离,并且半导体覆盖层通过向反应器室中加入含有在第二个结合形式的半导体元件的工艺气体的多组分混合物而化学气相沉积在衬底上, 预定的流量和具有预定的第二功率密度的HF功率的耦合进入第二预定时间段。
    • 26. 发明授权
    • Biocompatible prosthesis
    • 生物相容性假体
    • US5735896A
    • 1998-04-07
    • US417966
    • 1995-04-06
    • Michael AmonArmin Bolz
    • Michael AmonArmin Bolz
    • A61F2/00A61F2/82A61L27/30A61L31/08A61L33/02C23C16/02C23C16/32A61F2/02A61F2/04
    • A61F2/82A61L27/306A61L31/088A61L33/027C23C16/0245C23C16/0272C23C16/325A61F2/0077A61F2240/001A61F2310/00742
    • A method of producing a biocompatible prosthesis based on a substrate made essentially of metal or ceramic. The substrate is placed into a reactor chamber of a cathodic vapor deposition arrangement and the chamber is evacuated to a predetermined pressure. A predetermined, negative bias voltage is then applied to the substrate and the substrate is surface treated by adding an etching gas to the reactor chamber, at a predetermined, first flow rate and coupling in a high frequency power with a first, predetermined power density for ionic etching for a first, predetermined period of time. The surface treated substrate is separated from the negative bias voltage and a semiconductor cover layer is chemical vapor-phase deposited on the substrate by adding to the reactor chamber a multi-component mixture of process gases containing a semiconductor element in bound format a second, predetermined flow rate and coupling-in of HF power with a predetermined, second power density, for a second, predetermined time period.
    • 一种生产基于由金属或陶瓷制成的基底的生物相容性假体的方法。 将衬底放置在阴极气相沉积装置的反应室中,并将室抽真空至预定压力。 然后将预定的负偏置电压施加到衬底,并且通过以预定的第一流量向反应器室中加入蚀刻气体并以高频功率与第一预定功率密度耦合来对衬底进行表面处理,用于 离子蚀刻第一预定时间段。 将经表面处理的衬底与负偏压分离,并且半导体覆盖层通过向反应器室中加入含有结合形式的第二预定的半导体元件的工艺气体的多组分混合物而化学气相沉积在衬底上 流量和具有预定的第二功率密度的HF功率的耦合进入第二预定时间段。