专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

WO2005083520A1 INORGANIC PASTE COMPOSITION, METHOD FOR PREPARING INORGANIC PASTE COMPOSITION, AND SHEET-SHAPED UNBAKED BODY FOR PRODUCING DISPLAY PANEL 审中-公开
标题翻译：无机糊剂组合物，无机糊剂组合物的制备方法，以及用于生产显示面板的片状不饱和体
公开(公告)号：WO2005083520A1
公开(公告)日：2005-09-09
申请号：PCT/JP2005/001648
申请日：2005-01-28
申请人： TOKYO OHKA KOGYO CO., LTD. , OBIYA, Hiroyuki , OSHIO, Kiminori , INOUE, Tomoyuki , SUZUKI, Shigeru
发明人： OBIYA, Hiroyuki , OSHIO, Kiminori , INOUE, Tomoyuki , SUZUKI, Shigeru
IPC分类号： G03F7/004
CPC分类号： G03F7/0047 , G03F7/0007 , G03F7/11
摘要： An inorganic paste composition containing inorganic powders, a binder resin having a hydroxyl group in a side chain thereof, and an organic solvent having no hydroxyl group, and contains an organic solvent having a hydroxyl group in an amount equal to or less than 5% by weight. The composition gives a film having a uniform dispersion of the inorganic powders therein and uniform thickness. The resulting film does not cause much shrinkage.
摘要翻译：一种无机糊剂组合物，其含有无机粉末，在其侧链具有羟基的粘合剂树脂和不具有羟基的有机溶剂，并且含有羟基数量等于或小于5％的有机溶剂的含量为重量。组合物得到其中无机粉末具有均匀分散体的膜和均匀的厚度。所得薄膜不会产生很大的收缩。

22. 发明申请

WO2005052688A2 CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE THERMOSETTING RESIN COMPOSITION METHOD OF FORMING CURED ARTICLE AND METHOD OF PRODUCING FUNCTIONAL DEVICE 审中-公开
标题翻译：化学增强型阳性光敏热固性树脂组合物的制备方法及生产功能性器件的方法
公开(公告)号：WO2005052688A2
公开(公告)日：2005-06-09
申请号：PCT/JP2004/017533
申请日：2004-11-18
申请人： TOKYO OHKA KOGYO CO., LTD. , TAKAHASHI, Toru , KATSUMATA, Naoya , MAEDA, Hiroki
发明人： TAKAHASHI, Toru , KATSUMATA, Naoya , MAEDA, Hiroki
IPC分类号： G03F7/00
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , H05K3/287 , H05K3/4676
摘要： There is provided a photosensitive thermosetting resin composition used for producing a permanent film, capable of forming a resin layer which is excellent in fluidity upon heat bonding after pattern, formation and also has excellent adhesion as well as bonding properties and/or sealing properties. This composition contains a reaction product of (A) an alkali soluble resin and (C) a 10 crosslinking polyvinyl ether compound, (B) a compound generating an acid under irradiation with radiation, and (D) an epoxy resin.
摘要翻译：本发明提供一种用于制造永久性膜的感光性热固性树脂组合物，其能够形成图案形成后的热粘合时的流动性优异的树脂层，并且粘合性优异且粘合性也优异性质和/或密封性能。该组合物含有（A）碱溶性树脂和（C）10交联聚乙烯基醚化合物的反应产物，（B）在辐射照射下产生酸的化合物，和（D）环氧树脂。

23. 发明申请

WO2005029184A3 POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMATION 审中-公开
标题翻译：阳性光敏剂组成和抗性模式的形成
公开(公告)号：WO2005029184A3
公开(公告)日：2005-06-02
申请号：PCT/JP2004012235
申请日：2004-08-19
申请人： TOKYO OHKA KOGYO CO LTD , MASUDA YASUO , OKUI TOSHIKI
发明人： MASUDA YASUO , OKUI TOSHIKI
IPC分类号： G03F7/004 , G03F7/023 , H01L21/027
CPC分类号： G03F7/023 , G03F7/0236
摘要： A means for increasing development velocity of a positive photoresist composition is provided which contains a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group. This means is positive photoresist composition and a formation method of a resist pattern using the composition which contains (A) a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group, which is dissolved in (B) propylene glycol alkyl ether acetate.
摘要翻译：提供了一种提高正性光致抗蚀剂组合物显影速度的方法，该方法含有通过用1,2-萘醌二叠氮化物磺酰基取代碱溶性酚醛清漆树脂的所有酚羟基中的一些氢原子而形成的光敏酚醛清漆树脂。这意味着正型光刻胶组合物和使用该组合物的抗蚀剂图案形成方法，所述组合物包含（A）通过用1,2-萘醌二叠氮化物取代碱溶性酚醛清漆树脂的所有酚羟基中的一些氢原子而形成的光敏酚醛清漆树脂磺酰基，其溶解于（B）丙二醇烷基醚乙酸酯中。

24. 发明申请

WO2004113486A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：清洁组合物，清洁半导体基板的方法和在半导体基板上形成布线的方法
公开(公告)号：WO2004113486A1
公开(公告)日：2004-12-29
申请号：PCT/JP2004/008951
申请日：2004-06-18
申请人： TOKYO OHKA KOGYO CO., LTD. , INTEL CORPORATION
发明人： YOKOI, Shigeru , WAKIYA, Kazumasa , HARAGUCHI, Takayuki , HUSSEIN, Makarem, A. , JONG, Lana, I. , CLARK, Shan, Christopher
IPC分类号： C11D11/00
CPC分类号： G03F7/425 , C11D7/06 , C11D7/267 , C11D7/32 , C11D7/34 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/31133
摘要： A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
摘要翻译：洗涤剂组合物至少包含季铵氢氧化物，水溶性有机溶剂，水，防腐剂和氢氧化钾的总量的1质量％以下。该清洁组合物可以从半导体衬底的表面单独且有效地除去光致抗蚀剂膜，掩埋材料，金属残留物。

25. 发明申请

WO2004051380A8 METHOD FOR FORMING RESIST PATTERN AND RESIST PATTERN 审中-公开
标题翻译：形成电阻图案和电阻图案的方法
公开(公告)号：WO2004051380A8
公开(公告)日：2004-11-25
申请号：PCT/JP0315427
申请日：2003-12-02
申请人： TOKYO OHKA KOGYO CO LTD , HITACHI SCIENCE SYSTEMS LTD , HITACHI HIGH TECH CORP , KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA TASUKU , FUJII KAZUHIRO , SATO KENICHI
发明人： KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA TASUKU , FUJII KAZUHIRO , SATO KENICHI
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32 , G03F7/40 , H01L21/027
CPC分类号： G03F7/32 , G03F7/0397 , G03F7/40
摘要： A method for forming a resist pattern, which comprises a step of applying a positive resist composition comprising a resin component (A) containing an alkali-soluble unit in an mount less than 20 mol % and having an acid-dissociative group inhibiting the dissolution thereof in an alkali and thus exhibiting the enhancement in the solubility in an alkaline solution by the action of an acid, a component (B) generating an acid by the exposure to a light, and an organic solvent (C) capable of dissolving (A) and (B) components on a substrate, steps of pre-baking, selective exposure, heating after exposure, and an alkali development, a replacement step of at least once replacing a liquid present on the substrate at least once with a liquid for replacement and replacing the liquid for replacement with a liquid for the critical drying, and then a drying step of drying the liquid for the critical drying through a critical state. The method can be employed, in a process of forming a resist pattern, for preventing a fine resist pattern from falling down in a drying step after developing.
摘要翻译：一种形成抗蚀剂图案的方法，其包括将包含含有碱溶性单元的树脂组分（A）的正性抗蚀剂组合物涂布在小于20mol％的载体中并具有抑制其溶解的酸解离基团的步骤在碱中，因此通过酸，通过曝光产生酸的组分（B）和能够溶解（A）的有机溶剂（C）表现出在碱性溶液中的溶解度增强，和（B）基材上的组分，预烘焙，选择性曝光，曝光后加热和碱显影的步骤，至少一次用待更换的液体代替基板上存在的液体至少一次的更换步骤; 用用于临界干燥的液体替换用于替换的液体，然后进行干燥步骤，以将临界干燥的液体干燥至临界状态。在形成抗蚀剂图案的过程中，可以采用该方法，以防止在显影之后的干燥步骤中精细的抗蚀剂图案掉落。

26. 发明申请

WO2004050728A2 METHOD OF PRODUCING (METH) ACRYLIC ACID DERIVATIVE POLYMER FOR RESIST 审中-公开
标题翻译：生产（甲基）丙烯酸衍生物聚合物抗体的方法
公开(公告)号：WO2004050728A2
公开(公告)日：2004-06-17
申请号：PCT/JP2003/015348
申请日：2003-12-01
申请人： TOKYO OHKA KOGYO CO., LTD. , KUBOTA, Naotaka , IWAI, Takeshi , HADA, Hideo
发明人： KUBOTA, Naotaka , IWAI, Takeshi , HADA, Hideo
IPC分类号： C08F220/00
CPC分类号： G03F7/0397 , C08F220/10 , Y10T428/31935
摘要： There is provided a photoresist composition capable of forming a resist pattern with minimal LER, and a method of forming a resist pattern. This method is a method of producing a (meth)acrylic acid derivative polymer for use as a resist by radical polymerization of a monomer mixture comprising (al) a (meth)acrylate ester with an acid dissociable, dissolution inhibiting group, and (a2) a (meth)acrylate ester with a lactone unit, wherein (al) and (a2) utilize compounds such that when each compound (al) and (a2) is individually subjected to homopolymerization, under identical conditions to the radical polymerization, and a residual monomer ratio is determined 10 minutes after the start of the homopolymerization, the difference between the minimum residual monomer ratio and the maximum residual monomer ratio is no more than 15 mol%.
摘要翻译：提供了能够以最小的LER形成抗蚀剂图案的光致抗蚀剂组合物以及形成抗蚀剂图案的方法。该方法是通过包含（a1）（甲基）丙烯酸酯与酸解离性溶解抑制基团的单体混合物进行自由基聚合而制造用作抗蚀剂的（甲基）丙烯酸衍生物聚合物的方法，（a2）具有内酯单元的（甲基）丙烯酸酯，其中（a1）和（a2）利用化合物使得当在自由基聚合的相同条件下各化合物（a1）和（a2）各自进行均聚时，在均聚开始10分钟后测定单体比例，最小残余单体比例与最大残余单体比例之间的差异不大于15摩尔％。

27. 发明申请

WO2004050725A1 POLYMER COMPOUND, RESIST COMPOSITION AND DISSOLUTION INHIBITOR AGENT CONTAINING THE POLYMER COMPOUND 审中-公开
标题翻译：聚合物化合物，耐酸性组合物和溶解抑制剂包含聚合物化合物
公开(公告)号：WO2004050725A1
公开(公告)日：2004-06-17
申请号：PCT/JP2003/015247
申请日：2003-11-28
申请人： TOKYO OHKA KOGYO CO., LTD. , OGATA, Toshiyuki , ENDO, Kotaro , TSUJI, Hiromitsu , YOSHIDA, Masaaki , HADA, Hideo , TAKASU, Ryoichi , SATO, Mitsuru
发明人： OGATA, Toshiyuki , ENDO, Kotaro , TSUJI, Hiromitsu , YOSHIDA, Masaaki , HADA, Hideo , TAKASU, Ryoichi , SATO, Mitsuru
IPC分类号： C08F20/22
CPC分类号： G03F7/0046 , C08F20/22 , G03F7/0397 , Y10S430/108
摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 mm-1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.
摘要翻译：提供一种用于下一代微细加工的光致抗蚀剂组合物的高透明度的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。为了确保耐蚀刻性，将脂环族基团引入侧链部分。脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0mm -1的吸附系数表示的157纳米波长的透明度。作为脂环基，优选使用多环基。通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

28. 发明申请

WO2022213043A1 METHOD FOR SUPPRESSING COLLAPSE OF THREE-DIMENSIONAL STRUCTURE 审中-公开
公开(公告)号：WO2022213043A1
公开(公告)日：2022-10-06
申请号：PCT/US2022/071349
申请日：2022-03-25
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： SAEKI, Fusayo , WAKIYA, Kazumasa
IPC分类号： G03F7/40 , H01L21/02 , H01L21/3105 , C08L83/04 , G03F7/405 , H01L21/02057
摘要： To provide a method for suppressing collapse of a three-dimensional structure which can hydrophobize a surface of a three-dimensional structure on a substrate, regardless of a material of the substrate and a material of the three-dimensional structure, and can suppress collapse of the three-dimensional structure on the substrate, as a result of hdrophobization, a surface treatment liquid suitably used for surface treatment of the three-dimensional structure in the method for suppressing collapse, and a method for producing the surface treatment liquid, and a substrate having a three-dimensional structure with silane condensate that is a component of the surface treatment liquid and is attached or bound to a surface of the three-dimensional structure. In a method for suppressing collapse of a three-dimensional structure including, preparing a substrate having a three-dimensional structure on a surface thereof, and contacting a surface treatment liquid to a surface of the three-dimensional structure, a surface treatment liquid including a silane condensate (A) that is silane condensate formed by hydrolyzation condensation of a hydrolyzable silane compound including a trifunctional silane compound (A1) having a specific structure is used.

29. 发明申请

WO2006011607A8 MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME 审中-公开
标题翻译：用于形成耐腐蚀膜的材料和使用其形成耐蚀图案的方法
公开(公告)号：WO2006011607A8
公开(公告)日：2008-02-07
申请号：PCT/JP2005013976
申请日：2005-07-29
申请人： TOKYO OHKA KOGYO CO LTD , ISHIZUKA KEITA , ENDO KOTARO , HIRANO TOMOYUKI
发明人： ISHIZUKA KEITA , ENDO KOTARO , HIRANO TOMOYUKI
IPC分类号： G03F7/11 , G03F7/039 , G03F7/20 , G03F7/38 , H01L21/027
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/128
摘要： In a liquid immersion lithography process, the present invention enables to prevent deterioration of a resist film during liquid immersion exposure using water or other various immersion liquids and deterioration of the immersion liquid used therein at the same time and also enables to improve post exposure resistance of the resist film without increasing the number of process steps. Consequently, there can be formed a high-resolution resist pattern by liquid immersion lithography. Specifically, a protective film is formed on the surface of a resist film using a composition containing at least an alkali-soluble polymer, a crosslinking agent and a solvent which can dissolve the polymer and crosslinking agent.
摘要翻译：在液浸光刻工艺中，本发明能够防止在使用水或其它各种浸渍液体浸渍曝光期间的抗蚀剂膜的劣化，同时使用其中浸渍液的劣化，并且还能够提高耐曝光性抗蚀剂膜不增加工艺步骤的数量。因此，可以通过液浸光刻形成高分辨率抗蚀剂图案。具体而言，使用能够溶解聚合物和交联剂的至少含有碱溶性聚合物，交联剂和溶剂的组合物，在抗蚀剂膜的表面上形成保护膜。

30. 发明申请

WO2006091802A2 NORBORNENE-TYPE POLYMERS, COMPOSITIONS THEREOF AND LITHOGRAPHIC PROCESSES USING SUCH COMPOSITIONS 审中-公开
标题翻译： NORBORNENE型聚合物，其组合物及使用该组合物的光刻工艺
公开(公告)号：WO2006091802A2
公开(公告)日：2006-08-31
申请号：PCT/US2006/006575
申请日：2006-02-23
申请人： PROMERUS LLC , TOKYO OHKA KOGYO CO., LTD. , RHODES, Larry, F. , CHANG, Chun , KANDANARACHCHI, Pramod , SEGER, Lawrence, D. , ISHIDUKA, Keita , ENDO, Kotaro , ANDO, Tomoyuki
发明人： RHODES, Larry, F. , CHANG, Chun , KANDANARACHCHI, Pramod , SEGER, Lawrence, D. , ISHIDUKA, Keita , ENDO, Kotaro , ANDO, Tomoyuki
IPC分类号： G03F7/038
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0046 , G03F7/11 , G03F7/2041 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present invention relate generally to non-self imageable and imageable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.
摘要翻译：本发明的实施方案一般涉及可用于浸没式平版印刷方法的非自成像和可成像的降冰片烯型聚合物，制备此类聚合物的方法，使用此类聚合物的组合物和使用的浸没式平版印刷方法的这种组合物。更具体地说，本发明的实施方案涉及降冰片烯型聚合物，其可用于在浸没式光刻过程及其过程中用于形成用于覆盖这种成像层的成像层和顶涂层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式