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    • 21. 发明专利
    • Capacitor and its manufacturing method
    • 电容器及其制造方法
    • JP2007088427A
    • 2007-04-05
    • JP2006195337
    • 2006-07-18
    • Jsr CorpJsr株式会社Okutekku:KkTokyo Electron Ltd東京エレクトロン株式会社株式会社オクテック
    • YAMANISHI YOSHIKIHARADA MUNEOKITANO TAKAHIROKAWAGUCHI TATSUZOHIROTA YOSHIHIROSHIYOUDEN KENJIYAMADA KINJISHINODA TOMOTAKAO DOUKAIOKUMURA KATSUYA
    • H01G4/12C04B35/64H01G4/10H01G13/00
    • H01L28/55
    • PROBLEM TO BE SOLVED: To provide a capacitor comprising a high-quality dielectric layer which is formed in a short baking time. SOLUTION: Atmosphere in a processing apparatus 100 is adjusted to, for example, oxygen atmosphere, by a gas supply source 112 and the like. Interior of a thermal processing apparatus 101 is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat 161 having a dielectric precursor layer formed is loaded into the thermal processing apparatus 101 at a speed at which no defect is produced in wafer W. Thereafter, a reaction tube of the thermal processing apparatus 101 has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in the thermal processing apparatus 101 and then to room temperature in the processing apparatus 100, and carried out from the processing apparatus 100. Before dielectric precursor layer formed on the wafer W is baked, it is maintained for predetermined time at the temperature higher than the temperature at which solvent in the dielectric precursor layer is volatilized and lower than the temperature at which the dielectric precursor layer starts crystallization to vaporize residual solvent. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种电容器,其包括在短的烘烤时间内形成的高质量电介质层。 解决方案:处理设备100中的气氛通过气体供应源112等被调节为例如氧气氛。 将热处理装置101的内部设定为氧气氛并升温至规定温度。 形成有电介质前体层的晶片舟161以晶片W中不产生缺陷的速度装载到热处理装置101中。此后,热处理装置101的反应管的内部温度升高至烘烤温度 以进行预定时间的烘烤。 将晶片W在热处理装置101中冷却至规定温度,然后在处理装置100中冷却至室温,并从处理装置100进行。在形成在晶片W上的电介质前体层被烘烤之前,维持 在高于电介质前体层中的溶剂挥发的温度的温度下的预定时间低于电介质前体层开始结晶以蒸发残余溶剂的温度。 版权所有(C)2007,JPO&INPIT
    • 22. 发明专利
    • METHOD AND DEVICE FOR FORMING OF DIELECTRIC THIN FILM OF ABOx TYPE PEROVSKITE CRYSTAL STRUCTURE
    • 用于形成ABOx型水晶结构的电介质薄膜的方法和装置
    • JP2007059628A
    • 2007-03-08
    • JP2005243263
    • 2005-08-24
    • Okutekku:KkTokyo Electron Ltd東京エレクトロン株式会社株式会社オクテック
    • OKUMURA KATSUYAKITANO TAKAHIROYAMANISHI YOSHIKIHARADA MUNEOKAWAGUCHI TATSUZOHIROTA YOSHIHIRO
    • H01G4/12H01G4/33
    • PROBLEM TO BE SOLVED: To provide a forming method of a dielectric thin film having an ABO
      X type perovskite crystal structure whose dielectric constant is high and a leak current is little.
      SOLUTION: A process for applying a solvent to the surface of a substrate, a process for spreading a coating liquid to the surface of the substrate by supplying the coating liquid comprising a dielectric formation composition of a thin film to a central part of the surface of the substrate and rotating the substrate with the solvent existing all over the surface of the substrate, and a process for performing heat treatment which is the pretreatment of baking for a coating film by heating the substrate are executed. Thereafter, the coating film is baked, and a dielectric thin film is obtained with an ABO
      X type perovskite crystal structure. The coating liquid replaces the solvent while pushing the solvent on the substrate, and contact can be restrained to the coating liquid to gas phase. Reaction with a compound in the coating film and CO
      2 is restrained as CO
      2 in a gas phase is involved in the coating film, and the generation of a reactant which causes a leak current can be restrained.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供具有介电常数高且漏电流小的ABO X 型钙钛矿型晶体结构的电介质薄膜的形成方法。 解决方案:将溶剂施加到基材的表面的方法,通过将包含薄膜的电介质形成组合物的涂布液供给到基材的表面的涂布液向基材的表面扩散的方法, 基板的表面并且在基板的整个表面上存在溶剂旋转基板,并且执行作为通过加热基板来对涂膜进行预处理的热处理的方法。 然后,对涂膜进行烘烤,得到具有ABO X 型钙钛矿晶体结构的电介质薄膜。 涂布液代替溶剂,同时将溶剂推向基板上,可以将涂层液体接触到气相。 在涂膜中与气相中的CO 2 中的化合物的反应被抑制为CO 2 ,并且产生引起 可以抑制泄漏电流。 版权所有(C)2007,JPO&INPIT
    • 23. 发明专利
    • METHOD OF FORMING DIELECTRIC FILM HAVING ABOx TYPE PEROVSKITE CRYSTAL STRUCTURE
    • 形成具有二氧化钛型晶体结构的电介质膜的方法
    • JP2007055846A
    • 2007-03-08
    • JP2005243317
    • 2005-08-24
    • Okutekku:KkTokyo Electron Ltd東京エレクトロン株式会社株式会社オクテック
    • OKUMURA KATSUYAKITANO TAKAHIROYAMANISHI YOSHIKIHARADA MUNEOKAWAGUCHI TATSUZOHIROTA YOSHIHIRO
    • C04B35/46H01B19/00H01G4/12
    • H01G4/1209C04B35/4682H01G4/33
    • PROBLEM TO BE SOLVED: To provide a dielectric film having high flatness secured by forming a first thin film and a second thin film comprising a crystal particle having average particle diameter smaller than that in the first thin film to form a dense film on the first thin film. SOLUTION: The dielectric film 3 having an ABOx type perovskite crystal structure is formed by laminating the first thin film 31 having the ABOx type perovskite crystal structure having ≥10 nm voids and the second thin film 32 which is formed on the first thin film 31 by applying a coating liquid of the thin film having the ABOx type perovskite crystal structure and firing and comprises the crystal particle smaller than that in the first thin film. Because the voids in the first thin film 31 are large, the coating liquid for the second thin film 32 enters into the voids from the surface side of the first thin film 31 to be filled in the voids and the coated area is formed by the dense film. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种通过形成第一薄膜而具有高平坦度的电介质膜和包含平均粒径小于第一薄膜中的结晶粒子的第二薄膜,以在第一薄膜上形成致密膜 第一部薄膜。 解决方案:具有ABOx型钙钛矿晶体结构的电介质膜3通过层叠具有≥10nm空隙的ABOx型钙钛矿晶体结构的第一薄膜31和形成在第一薄膜上的第二薄膜32而形成 通过涂布具有ABOx型钙钛矿晶体结构的薄膜的涂布液进行烧成,并且包含比第一薄膜小的结晶粒子。 由于第一薄膜31中的空隙大,所以第二薄膜32的涂布液从第一薄膜31的表面侧入射到空隙中,填充到空隙中,并且涂布区域由密集 电影。 版权所有(C)2007,JPO&INPIT
    • 26. 发明专利
    • Gas supply accumulating unit
    • 气体供应累积单元
    • JP2006046502A
    • 2006-02-16
    • JP2004228637
    • 2004-08-04
    • Ckd CorpOkutekku:Kkシーケーディ株式会社株式会社オクテック
    • OKUMURA KATSUYABANDO HIROSHIDOI HIROKI
    • F16K27/00F17D1/04
    • PROBLEM TO BE SOLVED: To provide a versatile gas supply accumulating unit having drastically reduced weight, less gas pressure loss, inexpensive manufacturing cost, and effectively improved constructivity.
      SOLUTION: (1) The gas supply accumulating unit comprises a module for controlling the flow of gas and a base on which the module is mounted. It has a U-shaped pipe member 12 composed of a plate receiving part 34 and a U-shaped pipe part 35. (2) A template 13 is arranged between the module and the U-shaped pipe member 12 and fastened to the base with a bolt 32. (4) The template 13 has an approximately U-shaped cross section composed of a base fastening portion 13a and a positioning portion 13b of the U-shaped pipe member 12. (4) As the base, a rail 11 is used.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种具有显着减轻重量,更小的气体压力损失,廉价的制造成本以及有效地提高结构性的通用气体积聚单元。 (1)气体积聚单元包括用于控制气体流动的模块和安装模块的基座。 它具有由板接收部34和U形管部35构成的U形管构件12.(2)在模块与U形管构件12之间配置有模板13, 螺栓32.(4)模板13具有由U形管构件12的基部固定部13a和定位部13b组成的大致U字状的横截面。(4)作为基座,轨道11为 用过的。 版权所有(C)2006,JPO&NCIPI
    • 27. 发明专利
    • Application method for droplet and application apparatus for droplet
    • DROPLET应用方法及其应用设备
    • JP2005279628A
    • 2005-10-13
    • JP2004168580
    • 2004-06-07
    • Ckd CorpOkutekku:Kkシーケーディ株式会社株式会社オクテック
    • OKUMURA KATSUYAOZAWA YUKIOBANDO HIROSHIITO KAZUHISAITO SHINSATO RIYUUTETSU
    • G03F7/16B05C5/00B05C13/02B05D1/26B05D3/00H01L21/027
    • PROBLEM TO BE SOLVED: To provide an application method for droplets and an application apparatus for droplets capable of eliminating waste of coating liquid which forms a liquid film on a substrate and easily obtaining a uniform coated surface. SOLUTION: This is the application apparatus for droplets in which a microquantity of viscous liquid 12 is discharged from the tip of a nozzle 11 in the state of non-stopping, the discharged liquid 12 contacts a substrate 50 which is positioned under the nozzle 11, and the liquid 12 which is discharged by horizontal movement of the substrate 50 is pulled by the substrate 50 and is disconnected from the nozzle 11 so that the liquid which has turned to be a droplet 13 on the substrate 50 keeps dripped down. And this is the application method for droplets dripping a plurality of droplets on the substrate 50 at a prescribed interval so that the droplets which are dripped down on the substrate 50 spread with wetting and form a membrane. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种用于液滴的施加方法和一种能够消除在基板上形成液膜的涂布液的浪费的液滴的施加装置,并且容易地获得均匀的涂布表面。 解决方案:这是用于液滴的施加装置,其中粘性液体12的微量量在不停止状态下从喷嘴11的末端排出,排出的液体12接触位于下方的基板50 喷嘴11,并且通过基板50的水平移动而排出的液体12被基板50拉动,并且与喷嘴11断开,使得已经变成为基板50上的液滴13的液体保持滴落。 这是用于以规定的间隔滴落基板50上的多个液滴的液滴的应用方法,使得滴落在基板50上的液滴以润湿的方式扩散并形成膜。 版权所有(C)2006,JPO&NCIPI
    • 28. 发明专利
    • Film-forming device
    • 成膜装置
    • JP2005252207A
    • 2005-09-15
    • JP2004064721
    • 2004-03-08
    • Ckd CorpOkutekku:Kkシーケーディ株式会社株式会社オクテック
    • OKUMURA KATSUYAOZAWA YUKIO
    • G03F7/16B05C5/00B05C11/08H01L21/027
    • PROBLEM TO BE SOLVED: To provide a film-forming device for reducing the amount of use of liquid for forming a film and precisely managing the uniformity of the thickness of a film formed on a substrate to be treated. SOLUTION: The film-forming device 10 comprises a absorption plate 21 for absorbing and retaining a wafer 20 coated with a resist liquid by a scan coating method; a DD motor 22 for rotating the wafer 20 retained by the absorption plate 21; a stirring element 30 for performing the ultrasonic stirring of the resist liquid on the wafer 20; a cylindrical piezoelectric element 32 for performing the ultrasonic vibration of the stirring element 30; an element holder 33 for retaining the cylindrical piezoelectric element 32; an X-axis slider 37 for relatively moving the element holder 33 and the wafer 20 in a horizontal (X-axis) direction; and a Z-axis slider 38 for relatively moving the element holder 33 and the wafer 20 in a vertical (Z-axis) direction. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于减少用于形成膜的液体的使用量并且精确地控制在待处理的基板上形成的膜的厚度的均匀性的成膜装置。 解决方案:成膜装置10包括用于通过扫描涂布方法吸收和保持涂覆有抗蚀剂液体的晶片20的吸收板21; 用于旋转由吸收板21保持的晶片20的DD电动机22; 用于在晶片20上进行抗蚀剂液体的超声波搅拌的搅拌元件30; 用于执行搅拌元件30的超声波振动的圆柱形压电元件32; 用于保持圆柱形压电元件32的元件保持器33; 用于在水平(X轴)方向上相对移动元件支架33和晶片20的X轴滑块37; 以及用于在垂直(Z轴)方向上相对移动元件保持件33和晶片20的Z轴滑块38。 版权所有(C)2005,JPO&NCIPI
    • 29. 发明专利
    • Wafer cleaning device
    • WAFER清洁装置
    • JP2005252206A
    • 2005-09-15
    • JP2004064718
    • 2004-03-08
    • Ckd CorpOkutekku:Kkシーケーディ株式会社株式会社オクテック
    • OKUMURA KATSUYAOZAWA YUKIOITO SHIN
    • H01L21/304
    • PROBLEM TO BE SOLVED: To provide a wafer cleaning device for cleaning only a prescribed part on the surface of a wafer.
      SOLUTION: The wafer cleaning device 10 comprises an absorption plate 21 for absorbing and retaining a wafer 20; a DD motor 22 for rotating the wafer 20 retained by the absorption plate 21; a sponge 30 for cleaning the wafer 20 in contact with the wafer 20; a cylindrical piezoelectric element 32 for performing the ultrasonic vibration of the sponge 30; an element holder 33 for retaining the cylindrical piezoelectric element 32; an X-axis slider 37 for relatively moving an element holder 33 and the wafer 20 in a horizontal (X-axis) direction; and a Z-axis slider 38 for relatively moving the element holder 33 and the wafer 20 in a vertical (Z-axis) direction.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于仅清洁晶片表面上的规定部分的晶片清洁装置。 解决方案:晶片清洁装置10包括用于吸收和保持晶片20的吸收板21; 用于旋转由吸收板21保持的晶片20的DD电动机22; 用于清洁与晶片20接触的晶片20的海绵30; 用于执行海绵30的超声波振动的圆柱形压电元件32; 用于保持圆柱形压电元件32的元件保持器33; X轴滑块37,用于在水平(X轴)方向上相对移动元件支架33和晶片20; 以及用于在垂直(Z轴)方向上相对移动元件保持件33和晶片20的Z轴滑块38。 版权所有(C)2005,JPO&NCIPI
    • 30. 发明专利
    • Nox concentration detecting sensor
    • NOX浓度检测传感器
    • JP2005249718A
    • 2005-09-15
    • JP2004063865
    • 2004-03-08
    • Ibiden Co LtdOkutekku:Kkイビデン株式会社株式会社オクテック
    • OKUMURA KATSUYAITO ATSUSHITSUNEKAWA HAJIME
    • G01N27/419G01N27/416
    • PROBLEM TO BE SOLVED: To improve the measurement accuracy in a sensor for measuring a concentration of NOx by utilizing first and second pump cells. SOLUTION: The NOx sensor 2 is provided with the first pump cell 10 comprising a solid electrolyte layer 4a, a first lower face electrode 12 and a first upper face electrode 14 formed on lower and upper faces of the solid electrolyte layer 4a, and the second pump cell 20 comprising the solid electrolyte layer 4a, a second lower face electrode 22 and a second upper face electrode 24 formed on the lower and upper faces of the solid electrolyte layer 4a. The first lower face electrode 12 reduces the NOx contained in a measured gas in a gas introducing chamber 6, and generates nitrogen. The second lower electrode 22 does not reduce the NOx. The first and second lower face electrodes 12, 22 are adjacently formed on the lower face of the solid electrolyte layer 4a. A profile of an adjacent part horizontally viewed has recesses and protrusions mutually intruding. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:通过利用第一和第二泵浦单元来提高用于测量NOx浓度的传感器中的测量精度。 解决方案:NOx传感器2设置有包括形成在固体电解质层4a的下表面和上表面上的固体电解质层4a,第一下表面电极12和第一上表面电极14的第一泵电池10, 第二泵电池20包括形成在固体电解质层4a的下表面和上表面上的固体电解质层4a,第二下表面电极22和第二上表面电极24。 第一下表面电极12减少在气体导入室6中测量的气体中所含的NOx,并产生氮气。 第二下部电极22不会降低NOx。 第一和第二下表面电极12,22相邻地形成在固体电解质层4a的下表面上。 水平观察的相邻部分的轮廓具有相互侵入的凹陷和突起。 版权所有(C)2005,JPO&NCIPI