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21. 发明授权

US08294147B2 Semiconductor device and manufacturing method the same 有权
标题翻译：半导体器件和制造方法相同
公开(公告)号：US08294147B2
公开(公告)日：2012-10-23
申请号：US12832333
申请日：2010-07-08
申请人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
发明人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译：目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质它们与氧化物半导体层接触。

22. 发明授权

US06494976B1 Ultrasonically joining apparatus and ultrasonically joining method 失效
标题翻译：超声波接合装置和超声波接合方法
公开(公告)号：US06494976B1
公开(公告)日：2002-12-17
申请号：US09573436
申请日：2000-05-16
申请人： Takayuki Hayashi , Hiroo Yamaguchi , Takaki Okochi , Takeshi Iguchi , Toshinari Sasaki , Kazuaki Kafuku
发明人： Takayuki Hayashi , Hiroo Yamaguchi , Takaki Okochi , Takeshi Iguchi , Toshinari Sasaki , Kazuaki Kafuku
IPC分类号： B32B3116
CPC分类号： B23K20/106 , B23K20/10 , B23K20/24 , B23K33/00 , B23K2101/14 , B23K2101/36
摘要： A cooling device has a radiator plate and a corrugated fin for cooling an electrical component. In a manufacturing process of the cooling device, a symmetrically constructed tool section presses the radiator plate and the fin against an anvil. The radiator plate has an attaching portion where an electrical component is attached. Knurled surface for preventing a slide is formed on the tool section only at a surrounding area to prevent a deformation of the attaching portion. The tool section and the radiator plate vibrate ultrasonically in a longitudinal direction of corrugations of the fin to prevent a crack on the fin.
摘要翻译：冷却装置具有用于冷却电气部件的散热板和波纹状散热片。在冷却装置的制造过程中，对称构造的工具部分将散热板和散热片压靠在砧座上。散热板具有安装有电气部件的安装部。仅在周围区域在工具部分上形成用于防止滑动的滚花表面，以防止附接部分的变形。工具部分和散热板在翅片的波纹的纵向方向上超声振动，以防止翅片上的裂纹。

23. 发明授权

US09006803B2 Semiconductor device and method for manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09006803B2
公开(公告)日：2015-04-14
申请号：US13446028
申请日：2012-04-13
申请人： Atsuo Isobe , Toshinari Sasaki , Shinya Sasagawa , Akihiro Ishizuka
发明人： Atsuo Isobe , Toshinari Sasaki , Shinya Sasagawa , Akihiro Ishizuka
IPC分类号： H01L29/76 , H01L27/06 , H01L27/12 , H01L29/786 , H01L29/423 , H01L29/66 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02667 , H01L27/0688 , H01L27/1225 , H01L29/42384 , H01L29/78603 , H01L29/78642 , H01L29/7869 , H01L29/78696
摘要： An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface.
摘要翻译：绝缘层设置有突出的结构体，并且设置与突出结构体接触的氧化物半导体层的沟道形成区域，由此沟道形成区域沿三维方向（垂直于衬底的方向）延伸）。因此，可以使晶体管小型化并且延长晶体管的有效沟道长度。此外，突出结构体的顶表面和侧表面彼此相交的突出结构体的上端角部弯曲，并且氧化物半导体层形成为包括具有c轴的晶体垂直于曲面。

24. 发明授权

US08884297B2 Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof 有权
标题翻译：微晶硅膜及其制造方法，半导体装置及其制造方法
公开(公告)号：US08884297B2
公开(公告)日：2014-11-11
申请号：US13696865
申请日：2011-05-06
申请人： Sachiaki Tezuka , Yasuhiro Jinbo , Toshinari Sasaki , Hidekazu Miyairi , Yosuke Kanzaki , Masao Moriguchi
发明人： Sachiaki Tezuka , Yasuhiro Jinbo , Toshinari Sasaki , Hidekazu Miyairi , Yosuke Kanzaki , Masao Moriguchi
IPC分类号： H01L21/336 , H01L21/205 , H01L29/04 , H01L29/786 , H01L21/02 , C23C16/50 , C23C16/455 , C23C16/24 , H01L29/66
CPC分类号： H01L21/02513 , C23C16/24 , C23C16/45523 , C23C16/50 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.
摘要翻译：微晶硅膜的制造方法包括以下步骤：在第一条件下通过等离子体CVD法在绝缘膜上形成第一微晶硅膜; 以及在第二条件下在所述第一微晶硅膜上形成第二微晶硅膜。作为供给到处理室的源气体，使用含有硅和含氢气体的沉积气体。在第一条件下，将氢的流量设定为包含沉积气体的流量的50〜1000倍，处理室内的压力为67〜1333Pa。在第二条件下，将氢的流量设定为包含沉积气体的流量的100〜2000倍，处理室内的压力为1333〜13332Pa。

25. 发明授权

US08878172B2 Oxide semiconductor, thin film transistor, and display device 有权
标题翻译：氧化物半导体，薄膜晶体管和显示装置
公开(公告)号：US08878172B2
公开(公告)日：2014-11-04
申请号：US12581187
申请日：2009-10-19
申请人： Shunichi Ito , Toshinari Sasaki , Miyuki Hosoba , Junichiro Sakata
发明人： Shunichi Ito , Toshinari Sasaki , Miyuki Hosoba , Junichiro Sakata
IPC分类号： H01L29/10 , H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L27/1225 , G09G3/20 , H01L27/1248 , H01L27/1259 , H01L29/247 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.
摘要翻译：目的是控制氧化物半导体的组成和缺陷，另一个目的是增加薄膜晶体管的场效应迁移率，并获得具有减小的截止电流的足够的开 - 关比。解决方案是使用其组成由InMO 3（ZnO）m表示的氧化物半导体，其中M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素，m优选为非 - 整数大于0且小于1. Zn的浓度低于In和M的浓度。氧化物半导体具有无定形结构。可以提供氧化物和氮化物层以防止氧化物半导体的污染和劣化。

26. 发明授权

US08748887B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08748887B2
公开(公告)日：2014-06-10
申请号：US13613456
申请日：2012-09-13
申请人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

27. 发明授权

US08629432B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08629432B2
公开(公告)日：2014-01-14
申请号：US12683681
申请日：2010-01-07
申请人： Junichiro Sakata , Takashi Shimazu , Hiroki Ohara , Toshinari Sasaki , Shunpei Yamazaki
发明人： Junichiro Sakata , Takashi Shimazu , Hiroki Ohara , Toshinari Sasaki , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L21/36
CPC分类号： H01L29/78696 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02592 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693 , H04M1/0266
摘要： A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.

28. 发明授权

US08389326B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US08389326B2
公开(公告)日：2013-03-05
申请号：US13495432
申请日：2012-06-13
申请人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
发明人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L21/477 , H01L21/02565 , H01L21/02664 , H01L21/383 , H01L21/46 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

29. 发明授权

US08207014B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08207014B2
公开(公告)日：2012-06-26
申请号：US12826021
申请日：2010-06-29
申请人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
发明人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L21/477 , H01L21/02565 , H01L21/02664 , H01L21/383 , H01L21/46 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
摘要翻译：本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度并减少杂质，包括水分等。之后，在氧气氛下进行缓慢冷却。除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面半导体并与其接触。

30. 发明申请

US20110057918A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20110057918A1
公开(公告)日：2011-03-10
申请号：US12872861
申请日：2010-08-31
申请人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
发明人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： G09G5/00
CPC分类号： H01L29/78693 , G09G3/3648 , G09G2300/0842 , H01L27/1225 , H01L29/78618
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
摘要翻译：一种显示装置，包括具有存储器的像素。像素至少包括显示元件，电容器，反相器和开关。开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。逆变器和开关可以由具有相同极性的晶体管构成。可以使用透光材料形成包括在像素中的半导体层。此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

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