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21. 发明申请

US20100019234A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT EMITTING TRANSISTOR 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20100019234A1
公开(公告)日：2010-01-28
申请号：US12517462
申请日：2007-11-28
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/30
CPC分类号： H01L51/0094 , H01L51/0022 , H01L51/005 , H01L51/0058 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105 , H01L51/5012 , H01L51/52 , H01L51/5203 , H01L51/5296
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

22. 发明申请

US20090256145A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20090256145A1
公开(公告)日：2009-10-15
申请号：US12514866
申请日：2007-11-13
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/10
CPC分类号： H01L51/5296 , H01L51/0022 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0058 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having a divalent aromatic hydrocarbon group having a phenanthrene structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中所述有机半导体层包含其中心具有菲结构的二价芳族烃基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

23. 发明申请

US20090017645A1 CONNECTOR 有权
标题翻译：连接器
公开(公告)号：US20090017645A1
公开(公告)日：2009-01-15
申请号：US12168047
申请日：2008-07-03
申请人： Masayuki Suzuki , Yuki Nakano
发明人： Masayuki Suzuki , Yuki Nakano
IPC分类号： H01R12/28
CPC分类号： H01R12/88 , H01R12/57 , H01R12/79 , H01R12/82
摘要： A first contact and a second contact are inserted into one and the same inserting hole of a housing so that contact portions of the first and second contacts are facing to each other. The first contacts each include the contact portion at one end and a connection portion at the other end. The second contacts each includes a first piece having the contact portion at one end and a pressure receiving portion at the other end, a second piece having connection portion at an outer end, and an elastic jointing-portion for jointing the first piece and the remaining end of the second piece. A pivoting member includes an actuating portion, pushing portions, and anchoring holes. The pushing portions are pivotally moved between the pressure receiving portions and the connection portions of the second contacts, during which pivotal movement, the axis of rotation of the pushing portions is moved with their pivotal movement to achieve their compact rotation. The second contacts are each provided on the second piece with a fixing portion in the proximity of the elastic jointing-portion. The connector constructed as above described prevents the contacts from being warped or deformed when the pivoting member is being pivotally moved, and achieves a stable electrical connection, a reduced overall height of the connector and a high density of the conductors.
摘要翻译：将第一接触件和第二接触件插入到壳体的同一插入孔中，使得第一和第二接触件的接触部分彼此面对。第一触点各自包括一端的接触部分和另一端的连接部分。第二触点分别包括一端具有接触部分的第一部分和另一端处的受压部分，在外端具有连接部分的第二部件和用于将第一部件与其余部件接合的弹性接合部分第二件的结尾。枢转构件包括致动部分，推动部分和锚定孔。推动部分在压力接收部分和第二接触件的连接部分之间枢转运动，在此期间枢转运动中，推动部分的旋转轴线以其枢转运动而移动以实现其紧凑的旋转。第二触点分别设置在第二部件上，在弹性接合部分附近具有固定部分。如上所述构造的连接器防止了当枢转构件被枢转地移动时触头翘曲或变形，并且实现了稳定的电连接，连接器的整体高度降低以及导体的高密度。

24. 发明申请

US20070224446A1 Material for organic electroluminescence device and organic electroluminescence device using the same 审中-公开
标题翻译：有机电致发光元件用材料及使用其的有机电致发光元件
公开(公告)号：US20070224446A1
公开(公告)日：2007-09-27
申请号：US11392604
申请日：2006-03-30
申请人： Yuki Nakano , Toshihiro Iwakuma , Masahide Matsuura , Hidetsugu Ikeda
发明人： Yuki Nakano , Toshihiro Iwakuma , Masahide Matsuura , Hidetsugu Ikeda
IPC分类号： H01L51/54 , C09K11/06
CPC分类号： H01L51/0067 , C07D307/91 , C07D333/76 , C07D409/14 , C09K11/06 , C09K2211/1007 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , C09K2211/1096 , C09K2211/185 , C09K2211/186 , H01L51/0059 , H01L51/0061 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0081 , H01L51/0094 , H01L51/5012 , H01L51/5016 , H01L51/5048 , H05B33/14 , H05B33/20
摘要： A material for organic electroluminescence device with specific structure. An an organic electroluminescence device comprising a cathode, an anode and an organic thin film layer which is sandwiched between the cathode and the anode and comprises at least one layer, wherein at least one layer in the organic thin film layer contains a material for the organic electroluminescence device described above. An organic electroluminescence device with excellent efficiency of light emission, without pixel defects, which is superior in heat resistance and prolonged lifetime is obtained.
摘要翻译：一种具有特定结构的有机电致发光器件材料。一种有机电致发光器件，包括阴极，阳极和有机薄膜层，其夹在阴极和阳极之间并且包括至少一层，其中有机薄膜层中的至少一层含有有机材料电致发光器件。获得了具有优异的发光效率的无像素缺陷的有机电致发光器件，其耐热性和延长的使用寿命都是优异的。

25. 发明授权

US5700824A Triazole derivatives, insecticide, acaricide and methods thereof 失效
标题翻译：三唑衍生物，杀虫剂，杀螨剂及其方法
公开(公告)号：US5700824A
公开(公告)日：1997-12-23
申请号：US740980
申请日：1996-11-06
申请人： Atsuhiko Ikeda , Masami Ozaki , Reijiro Honami , Takashi Yumita , Hiroyuki Yano , Yuki Nakano , Yutaka Kurihara , Tadayoshi Hirano
发明人： Atsuhiko Ikeda , Masami Ozaki , Reijiro Honami , Takashi Yumita , Hiroyuki Yano , Yuki Nakano , Yutaka Kurihara , Tadayoshi Hirano
IPC分类号： A01N43/653 , A01P7/02 , A01P7/04 , C07D249/08 , C07D401/12 , A61K31/41
CPC分类号： C07D249/08 , A01N43/653 , C07D401/12
摘要： The invention provides a triazole derivative represented by a general formula ##STR1## (wherein R.sup.1 is an alkyl group, X is a hydrogen atom, a halogen atom or an alkyl group, n is an integer of 1-5, Y is a halogen atom, a nitro group or an alkyl group, and m is an integer of 2-5) as well as insecticide and acaricide containing the same as an active ingredient. The triazole derivatives according to the invention exhibit an excellent effectiveness against harmful pests, particularly aphids and mites.
摘要翻译：本发明提供由通式（I）表示的三唑衍生物（其中R 1为烷基，X为氢原子，卤素原子或烷基，n为1-5的整数，Y为卤素原子，硝基或烷基，m为2-5的整数）以及含有与活性成分相同的杀虫剂和杀螨剂。根据本发明的三唑衍生物对有害害虫，特别是蚜虫和螨虫表现出极好的效果。

26. 发明授权

US5512551A Benzohydroxymoylazole derivatives and insecticide including the same 失效
标题翻译：苯并羟基肟基衍生物和杀虫剂包括相同
公开(公告)号：US5512551A
公开(公告)日：1996-04-30
申请号：US281039
申请日：1994-07-27
申请人： Keiji Toriyabe , Takayoshi Takehi , Yukio Nezu , Yuki Nakano , Tomonori Shimazu
发明人： Keiji Toriyabe , Takayoshi Takehi , Yukio Nezu , Yuki Nakano , Tomonori Shimazu
IPC分类号： A01N43/50 , A01N43/653 , C07D233/61 , C07D249/08 , C07D521/00 , C07F7/08 , C07F7/18 , C07F7/10
CPC分类号： C07D231/12 , A01N43/50 , A01N43/653 , C07D233/56 , C07D249/08 , C07F7/0812 , C07F7/1856
摘要： The present invention provides benzohydroximoylazole derivatives represented by the following novel formula: ##STR1## wherein R is a branched alkyl group having not fewer than 3 carbon atoms, a fluorine-substituted alkyl group having not fewer than 2 carbon atoms, a branched alkoxy group having not fewer than 3 carbon atoms, a halogen-substituted alkoxy group having not fewer than 3 carbon atoms, a cycloalkyl group, a cycloalkylmethyl group which may be substituted with one or two alkyl groups, a substituted silylalkyl group, a substituted silylalkyloxy group, a cycloalkyloxy group which may be substituted with one or two alkyl groups, an alkylthio group, a halogen-substituted alkyloxyalkyl group, an alkynyl group, or a halogen-substituted alkenyloxy group;X is a hydrogen atom, a chlorine atom, or a fluorine atom;Y is an alkyl group; and Z is a nitrogen atom or a methyne group,and methods for producing the same, insecticides including the benzohydroximoylazole derivatives as an active ingredient.
摘要翻译：本发明提供由以下新颖化学式表示的苯并羟肟基衍生物：其中R为不少于3个碳原子的支链烷基，具有不少于2个碳原子的氟取代烷基，支链烷氧基具有不少于3个碳原子，具有不少于3个碳原子的卤素取代的烷氧基，环烷基，可被一个或两个烷基取代的环烷基甲基，取代的甲硅烷基烷基，取代的甲硅烷基烷氧基，可以被一个或两个烷基取代的环烷氧基，烷硫基，卤素取代的烷氧基烷基，炔基或卤素取代的烯氧基; X是氢原子，氯原子或氟原子; Y为烷基; Z为氮原子或甲炔基，其制造方法为含有苯并羟基肟基衍生物的杀虫剂作为有效成分。

27. 发明授权

US08741803B2 Pesticidal composition and method for controlling pest 有权
标题翻译：杀虫剂组成及防治害虫的方法
公开(公告)号：US08741803B2
公开(公告)日：2014-06-03
申请号：US12673268
申请日：2008-07-31
申请人： Yoshihiro Ito , Yuki Nakano
发明人： Yoshihiro Ito , Yuki Nakano
IPC分类号： A01N43/40 , A01N43/653 , A01P7/00 , A01P7/02 , A01P7/04
CPC分类号： A01N41/02 , A01N31/14 , A01N41/10 , A01N43/50 , A01N43/653 , A01N37/22 , A01N37/28 , A01N37/42 , A01N43/16 , A01N43/40 , A01N43/54 , A01N43/56 , A01N47/24 , A01N47/38 , A01N53/00 , A01N57/28 , A01N2300/00
摘要： To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant. A pesticidal composition comprising the following (component A) and the following (component B) as active ingredients:(component A): one or more compounds selected from 3-arylphenyl sulfide derivatives represented by the formula [I]:(component A): wherein R is a C2-C6 alkyl group which may be substituted, or the like, each of B0, B1, B2 and B3 which are independent of one another, is a hydrogen atom, a halogen atom or a haloalkyl group, n is an integer of from 0 to 2, and Ar is a phenyl group, a pyrazolyl group or a triazolyl group, (component B): one or more compounds selected from the group consisting of triazamate, butocarboxim, butoxycarboxim, chromafenozide, halofenozide, cyflumetofen, prallethrin, acetoprole, ethiprole, methamidophos, flonicamid, pyridalyl, flufenerim, flubendiamide, tebufenozide, fenazaquin and cyenopyrafen.
摘要翻译：提供控制不利于培育有用作物植物或有用植物的害虫的杀虫组合物。作为活性成分的（A）成分和下述（B成分）的农药组合物：（A成分）：式（I）表示的一种以上选自3-芳基苯基硫醚衍生物的化合物：（A成分）：其中R是可以被取代的C 2 -C 6烷基等，其彼此独立的B 0，B 1，B 2和B 3各自是氢原子，卤素原子或卤代烷基，n是 0至2的整数，Ar为苯基，吡唑基或三唑基（组分B）：一种或多种选自三唑烷基，咔唑基偶氮，丁氧基卡马西亚，二铬酰肼，卤苯酰肼，氰氟虫酯，丙烯菊酯，acetoprole，乙虫腈，甲胺磷，氟虫酰胺，吡啶甲酰，flufenerim，flubendiamide，tebufenozide，fenazaquin和cyenopyrafen。

28. 发明申请

US20130313635A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130313635A1
公开(公告)日：2013-11-28
申请号：US13983157
申请日：2012-02-01
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/8213 , H01L27/088 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/086 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7827 , H01L2224/0603
摘要： A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.
摘要翻译：本发明的半导体器件是具有包括宽带隙半导体的半导体层的半导体器件，其中半导体层包括：第一导电型源极区，第二导电型沟道区和第一导电类型漏极区域，其从半导体层的表面侧依次形成; 源极沟槽，其从半导体层的表面通过源极区域和沟道区域到达漏极区域; 形成为与沟道区域接触的栅极绝缘膜; 面对沟道区域的栅电极，其间插入有栅极绝缘膜; 以及选择性地形成在源沟槽的侧面或底面上的第二导电类型的第一击穿电压保持区域，并且所述半导体器件包括与源极沟槽中的漏极区域接合的势垒形成层，用于通过与漏极区域的连接形成低于由沟道区域和漏极区域之间的pn结形成的体二极管的扩散电位的结屏障。

29. 发明申请

US20130306983A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130306983A1
公开(公告)日：2013-11-21
申请号：US13983051
申请日：2012-02-01
申请人： Yuki Nakano , Ryota Nakamura
发明人： Yuki Nakano , Ryota Nakamura
IPC分类号： H01L29/06 , H01L29/66 , H01L27/088
CPC分类号： H01L29/063 , H01L21/046 , H01L27/088 , H01L29/045 , H01L29/0607 , H01L29/0623 , H01L29/0696 , H01L29/0878 , H01L29/1037 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66666 , H01L29/7811 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bottom wall of the gate trench, and a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench.
摘要翻译：根据本发明的半导体器件包括由具有设置有侧壁和底壁的栅极沟槽的宽带隙半导体制成的半导体层，形成在栅极沟槽的侧壁和底壁上的栅极绝缘膜，以及栅极电极嵌入栅极沟槽中，以通过栅极绝缘膜与半导体层相对，而半导体层包括形成为暴露在半导体层的前表面侧的第一导电型源极区域，以部分地形成所述栅极沟槽的侧壁，形成在所述源极区域的靠近所述半导体层的后表面的与所述源极区域接触以用于部分地形成所述栅极沟槽的侧壁的第二导电类型体区域，第一导电性类型漂移区域形成在身体区域更靠近半导体层的后表面的一侧以与身体re接触用于形成栅极沟槽的底壁的第一导电类型的第一导电类型的第一击穿电压保持区域，以及选择性地形成在栅极沟槽的边缘部分上的第二导电类型的第一击穿电压保持区域，其中所述侧壁和底壁在栅极沟槽的部分区域中彼此相交。

30. 发明授权

US08575622B2 Silicon carbide trench MOSFET having reduced on-resistance, increased dielectric withstand voltage, and reduced threshold voltage 有权
标题翻译：具有降低的导通电阻，增加的介电耐受电压和降低的阈值电压的碳化硅沟槽MOSFET
公开(公告)号：US08575622B2
公开(公告)日：2013-11-05
申请号：US12993209
申请日：2009-05-20
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/45 , H01L29/66068 , H01L29/7397
摘要： A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a gate electrode (41), and an n-type semiconductor region (14). The p-type semiconductor layer (13) includes a channel region that is along the trench (3) and in contact with the second n-type semiconductor layer (12) and the n-type semiconductor region (14). The size of the channel region in the depth direction x is 0.1 to 0.5 μm. The channel region includes a high-concentration region where the peak impurity concentration is approximately 1×1018 cm−3. The semiconductor device A1 thus configured allows achieving desirable values of on-resistance, dielectric withstand voltage and threshold voltage.
摘要翻译：半导体器件（A1）包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13），沟槽（3），绝缘层（5）），栅电极（41）和n型半导体区域（14）。 p型半导体层（13）包括沿着沟槽（3）并与第二n型半导体层（12）和n型半导体区域（14）接触的沟道区域。沟道区域的深度方向x的大小为0.1〜0.5μm。沟道区域包括峰值杂质浓度约为1×1018cm-3的高浓度区域。如此构造的半导体器件A1允许实现导通电阻，介电耐受电压和阈值电压的期望值。

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