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21. 发明授权

US06642075B2 Method for manufacturing semiconductor laser device 有权
标题翻译：制造半导体激光器件的方法
公开(公告)号：US06642075B2
公开(公告)日：2003-11-04
申请号：US10202023
申请日：2002-07-25
申请人： Tohru Takiguchi
发明人： Tohru Takiguchi
IPC分类号： H01L2100
CPC分类号： H01S5/22 , H01S5/12 , H01S5/1231 , H01S5/2081
摘要： On a laminate containing a p-InGaAsP layer, one of layers including a diffraction grating layer, an SiO2 insulating film pattern that has first rectangular openings, each opening having a long side orthogonal with the direction of the optical wave guide, periodically arranged at intervals in the direction of the optical wave guide is formed. An SiN insulating film pattern having a second opening with a strip shape having a width narrower than the long side of the first opening, extending in the direction of the optical wave guide, is formed on the SiO2 insulating film pattern. The laminate containing the p-InGaAsP layer is dry-etched using the SiO2 insulating film pattern and the SiN insulating film pattern as masks, and methane and a hydrogen plasma as the etching media.
摘要翻译：在含有p-InGaAsP层的层压体中，包括衍射光栅层的层之一，具有第一矩形开口的SiO 2绝缘膜图案，每个开口具有与光波导的方向正交的长边，周期性地间隔布置在光波导的方向上形成。在SiO 2绝缘膜图案上形成具有带状形状的第二开口的SiN绝缘膜图案，该第二开口的宽度比第一开口的长边窄，沿着光波导方向延伸。使用SiO 2绝缘膜图案和SiN绝缘膜图案作为掩模，以及甲烷和氢等离子体作为蚀刻介质，干燥蚀刻含有p-InGaAsP层的层压体。

22. 发明授权

US06277663B1 Method of producing semiconductor laser diode 失效
标题翻译：制造半导体激光二极管的方法
公开(公告)号：US06277663B1
公开(公告)日：2001-08-21
申请号：US09395956
申请日：1999-09-14
申请人： Keisuke Matsumoto , Kazuhisa Takagi , Tohru Takiguchi
发明人： Keisuke Matsumoto , Kazuhisa Takagi , Tohru Takiguchi
IPC分类号： H01L2100
CPC分类号： H01S5/227 , H01S5/2077 , H01S5/2081 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/2275
摘要： A semiconductor laser diode includes a mesa having a width on a semiconductor substrate and aligned with a direction of resonance, a current blocking layer formed by selective growth on both sides of the mesa and having a first embedded layer and a second embedded layer covering the first embedded layer.
摘要翻译：半导体激光二极管包括在半导体衬底上具有宽度并与谐振方向对准的台面，通过在台面两侧选择生长而形成的电流阻挡层，并具有第一嵌入层和覆盖第一嵌入层的第二嵌入层嵌入层。

23. 发明授权

US6026106A Composite optical device 失效
标题翻译：复合光学器件
公开(公告)号：US6026106A
公开(公告)日：2000-02-15
申请号：US933307
申请日：1997-09-18
申请人： Daisuke Suzuki , Tatsuya Kimura , Tohru Takiguchi
发明人： Daisuke Suzuki , Tatsuya Kimura , Tohru Takiguchi
IPC分类号： G02B6/12 , G02B6/42 , H01S5/026 , H01S5/227 , H01S5/40 , H01S3/18
CPC分类号： H01S5/026 , G02B6/12004 , H01S5/0265 , G02B6/42 , H01S5/2275 , H01S5/4068
摘要： A composite optical device having a high efficiency of coupling a laser diode and an optical device and a method of producing the composite optical device. The composite optical device connects a laser diode with a first mesa including an active layer on a (001) plane of a compound semiconductor substrate via a first cladding layer and an optical device provided with a second mesa including an optical waveguide layer formed on the (001) plane via a second cladding layer, wherein one end of the active layer and one end of the optical waveguide layer oppose each other at a distance smaller than the thicknesses of the first and second cladding layers. At least the second cladding layer is grown in an ambient supplemented with HCl to produce a planar surface.
摘要翻译：具有耦合激光二极管和光学器件的高效率的复合光学器件和制造复合光学器件的方法。复合光学器件经由第一包层将激光二极管与化合物半导体衬底的（001）面上的具有活性层的第一台面连接，所述第一台面设置有第二台面，该第二台面包括形成在（ 001）平面，其中有源层的一端和光波导层的一端以比第一和第二覆层的厚度小的距离彼此相对。至少第二包覆层在补充有HCl的环境中生长以产生平坦表面。

24. 发明授权

US5771257A Light absorption modulator and integrated semiconductor laser and modulator 失效
标题翻译：光吸收调制器和集成半导体激光器和调制器
公开(公告)号：US5771257A
公开(公告)日：1998-06-23
申请号：US774018
申请日：1996-12-26
申请人： Tohru Takiguchi , Eitaro Ishimura
发明人： Tohru Takiguchi , Eitaro Ishimura
IPC分类号： G02F1/015 , G02F1/017 , H01S5/026 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19 , G02F1/01 , G02F1/03 , H01S3/10
CPC分类号： B82Y20/00 , G02F1/01708 , H01S5/0265 , G02F2001/0156 , H01S5/3054 , H01S5/3409 , H01S5/34306 , H01S5/3434
摘要： A light absorption modulator includes a semiconductor substrate of a first conductivity type; a first cladding layer of the first conductivity type disposed on the substrate; an optical waveguide disposed on the first cladding layer and including a multiple quantum well optical waveguide layer through which light travels and first and second light confinement layers respectively disposed on opposed surfaces of the optical waveguide layer to confine light in the optical waveguide layer; and a second cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the optical waveguide, one of the first and second cladding layers being n type, the one of the first and second light confinement layers that contacts the n type cladding layer being p type, and light traveling through the optical waveguide layer being modulated by applying an electric field to the optical waveguide layer. The electric field strength in the multiple quantum well optical waveguide layer when no reverse bias is applied to the modulator is reduced, whereby the rise time of the optical output from the modulator is reduced.
摘要翻译：光吸收调制器包括第一导电类型的半导体衬底; 设置在基板上的第一导电类型的第一包层; 光波导，其设置在所述第一包层上，并且包括光行进的多量子阱光波导层，以及分别设置在所述光波导层的相对表面上以将光限制在所述光波导层中的第一和第二光限制层; 和与所述第一导电类型相反的第二导电类型的第二包覆层，设置在所述光波导上，所述第一和第二包层中的一个为n型，所述第一和第二限光层中的一个接触所述n型包层为p型，通过对光波导层施加电场来调制通过光波导层的光。当没有反向偏置被施加到调制器时，多量子阱光波导层中的电场强度降低，从而调制器的光输出的上升时间减小。

25. 发明申请

US20110317731A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110317731A1
公开(公告)日：2011-12-29
申请号：US13015797
申请日：2011-01-28
申请人： Tohru Takiguchi
发明人： Tohru Takiguchi
IPC分类号： H01S5/323 , H01S5/343
CPC分类号： H01S5/2223 , H01S5/0014 , H01S5/0425 , H01S5/2222 , H01S5/2231
摘要： A semiconductor laser includes a P-type InP substrate and a P-type InP cladding layer, an AlGaInAs strained quantum well active layer, an N-type InP cladding layer, a P-type InP buried layer, an N-type InP buried layer, a P-type InP buried layer, an N-type InP layer, an N-type InP contact layer, an SiO2 insulating film, an N-type electrode, and an electrode, all disposed on the P-type InP substrate. Further, the semiconductor laser includes an N-type InGaAsP layer.
摘要翻译：半导体激光器包括P型InP衬底和P型InP包覆层，AlGaInAs应变量子阱有源层，N型InP包覆层，P型InP掩埋层，N型InP掩埋层，P型InP掩埋层，N型InP层，N型InP接触层，SiO 2绝缘膜，N型电极和电极，全部设置在P型InP基板上。此外，半导体激光器包括N型InGaAsP层。

26. 发明授权

US07835413B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07835413B2
公开(公告)日：2010-11-16
申请号：US12198152
申请日：2008-08-26
申请人： Tohru Takiguchi , Yuichiro Okunuki , Go Sakaino
发明人： Tohru Takiguchi , Yuichiro Okunuki , Go Sakaino
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , H01S5/2222 , H01S5/2226 , H01S5/2275
摘要： A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.
摘要翻译：半导体激光器包括：包括彼此堆叠的p型覆层，有源层和n型覆层的脊结构; 以及埋藏在山脊结构侧面的埋藏层。掩埋层包括形成pn结的p型半导体层和n型半导体层; p型半导体层和n型半导体层中的一个在pn结附近具有5×1017cm-3以下的载流子浓度。

27. 发明授权

US07675954B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07675954B2
公开(公告)日：2010-03-09
申请号：US11144772
申请日：2005-06-06
申请人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
发明人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/02
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shape with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译：半导体激光装置包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形，每个顶点具有小于180度的内角。由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

28. 发明授权

US07187701B2 Ridge waveguide semiconductor laser 有权
标题翻译：脊波导半导体激光器
公开(公告)号：US07187701B2
公开(公告)日：2007-03-06
申请号：US10799714
申请日：2004-03-15
申请人： Yutaka Mihashi , Tohru Takiguchi , Toshio Tanaka , Tomoko Kadowaki , Yoshihiko Hanamaki , Nobuyuki Tomita
发明人： Yutaka Mihashi , Tohru Takiguchi , Toshio Tanaka , Tomoko Kadowaki , Yoshihiko Hanamaki , Nobuyuki Tomita
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/06226 , H01S5/16 , H01S5/2214 , H01S5/34366
摘要： A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 μm.
摘要翻译：脊波导半导体激光器包括有源层，有源层上的半导体层，具有脊形波导，半导体层上的绝缘膜，通过绝缘膜的开口与半导体层接触的第一电极层，以及在所述第一电极层上具有带状并且沿着所述波导延伸的第二电极层。从激光谐振器的端面到第二电极层的边缘的距离不超过20μm。

29. 发明授权

US06768760B2 Ridge-waveguide semiconductor laser device 失效
标题翻译：脊波导半导体激光器件
公开(公告)号：US06768760B2
公开(公告)日：2004-07-27
申请号：US10260280
申请日：2002-10-01
申请人： Yutaka Mihashi , Tohru Takiguchi , Yoshihiko Hanamaki
发明人： Yutaka Mihashi , Tohru Takiguchi , Yoshihiko Hanamaki
IPC分类号： H01S500
CPC分类号： H01S5/223 , H01S5/12 , H01S5/124 , H01S5/209 , H01S5/22 , H01S5/2231 , H01S5/3211
摘要： A laser device includes a double hetero-structure element constructed by depositing a p-type cladding layer, a quantum well active layer, an n-type thin first cladding layer and an n-type thick second cladding layer sequentially. A ridge-waveguide is shaped between two trenches formed in the second cladding layer. The first cladding layer serves as an etching stopper while etching the second cladding layer to form the two trenches. The trenches reach to or reach in vicinity to the surface of the first cladding layer. High-resistance regions may be formed in portions of the first cladding layer directly underneath the trenches. The thin first cladding layer, suppresses leakage current and improves the temperature characteristics and the operating speed characteristics of the laser device.
摘要翻译：激光器件包括通过依次沉积p型包覆层，量子阱有源层，n型薄第一覆层和n型厚第二覆层而构成的双异质结构元件。脊形波导形成在形成在第二覆层中的两个沟槽之间。第一覆层在蚀刻第二覆层以形成两个沟槽时用作蚀刻停止层。沟槽到达或到达第一包层的表面附近。高电阻区域可以形成在第一包层的直接在沟槽下方的部分中。薄的第一包层抑制漏电流，提高激光装置的温度特性和工作速度特性。

30. 发明授权

US5991322A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5991322A
公开(公告)日：1999-11-23
申请号：US505761
申请日：1995-07-21
申请人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
发明人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2086 , H01S5/2272 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
摘要翻译：半导体光学器件包括第一半导体层和设置在第一半导体层上的衍射光栅。衍射光栅包括在第一半导体层上生长的超晶格层的部分，并且包括交替布置的半导体材料的第二半导体层，其中在其它半导体层和不同于材料的半导体材料的第三半导体层的生长期间几乎不发生质量传输的第二半导体层。该器件包括埋入衍射光栅的第四半导体层。在这种结构中，由于第二半导体层包括在衍射光栅中，所以在第四半导体层的气相沉积期间维持衍射光栅的形状。因此，确定光耦合常数的衍射光栅的厚度，振幅和间距以高精度被控制。

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