专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5771257A Light absorption modulator and integrated semiconductor laser and modulator 失效
标题翻译：光吸收调制器和集成半导体激光器和调制器
公开(公告)号：US5771257A
公开(公告)日：1998-06-23
申请号：US774018
申请日：1996-12-26
申请人： Tohru Takiguchi , Eitaro Ishimura
发明人： Tohru Takiguchi , Eitaro Ishimura
IPC分类号： G02F1/015 , G02F1/017 , H01S5/026 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19 , G02F1/01 , G02F1/03 , H01S3/10
CPC分类号： B82Y20/00 , G02F1/01708 , H01S5/0265 , G02F2001/0156 , H01S5/3054 , H01S5/3409 , H01S5/34306 , H01S5/3434
摘要： A light absorption modulator includes a semiconductor substrate of a first conductivity type; a first cladding layer of the first conductivity type disposed on the substrate; an optical waveguide disposed on the first cladding layer and including a multiple quantum well optical waveguide layer through which light travels and first and second light confinement layers respectively disposed on opposed surfaces of the optical waveguide layer to confine light in the optical waveguide layer; and a second cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the optical waveguide, one of the first and second cladding layers being n type, the one of the first and second light confinement layers that contacts the n type cladding layer being p type, and light traveling through the optical waveguide layer being modulated by applying an electric field to the optical waveguide layer. The electric field strength in the multiple quantum well optical waveguide layer when no reverse bias is applied to the modulator is reduced, whereby the rise time of the optical output from the modulator is reduced.
摘要翻译：光吸收调制器包括第一导电类型的半导体衬底; 设置在基板上的第一导电类型的第一包层; 光波导，其设置在所述第一包层上，并且包括光行进的多量子阱光波导层，以及分别设置在所述光波导层的相对表面上以将光限制在所述光波导层中的第一和第二光限制层; 和与所述第一导电类型相反的第二导电类型的第二包覆层，设置在所述光波导上，所述第一和第二包层中的一个为n型，所述第一和第二限光层中的一个接触所述n型包层为p型，通过对光波导层施加电场来调制通过光波导层的光。当没有反向偏置被施加到调制器时，多量子阱光波导层中的电场强度降低，从而调制器的光输出的上升时间减小。

2. 发明申请

US20130299936A1 AVALANCHE PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： AVALANCHE光电及其制造方法
公开(公告)号：US20130299936A1
公开(公告)日：2013-11-14
申请号：US13745957
申请日：2013-01-21
申请人： Ryota Takemura , Eitaro Ishimura
发明人： Ryota Takemura , Eitaro Ishimura
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/107 , H01L31/1075 , H01L31/18 , H01L31/1844 , Y02E10/544
摘要： An avalanche photodiode includes a substrate; an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate. A p-type region is present in parts of the window layer and the light-absorbing layer. Carbon is the dopant of the electric field controlling layer. Zn is the dopant of the p-type region. A bottom face of the p-type region is closer to the substrate than is an interface between the light-absorbing layer and the window layer.
摘要翻译：雪崩光电二极管包括基板; 雪崩倍增层，p型电场控制层，光吸收层和顺序层叠在基板上的窗口层。 p型区域存在于窗口层和光吸收层的部分中。碳是电场控制层的掺杂剂。 Zn是p型区域的掺杂剂。 p型区域的底面比光吸收层和窗口层之间的界面更靠近基板。

3. 发明授权

US08526478B2 Semiconductor optical integrated element 有权
标题翻译：半导体光学集成元件
公开(公告)号：US08526478B2
公开(公告)日：2013-09-03
申请号：US13020028
申请日：2011-02-03
申请人： Eitaro Ishimura , Kazuhisa Takagi , Keisuke Matsumoto , Takeshi Saito
发明人： Eitaro Ishimura , Kazuhisa Takagi , Keisuke Matsumoto , Takeshi Saito
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , G02B6/122 , G02B2006/12097 , G02F1/2257 , H01S5/02461 , H01S5/026 , H01S5/1014 , H01S5/12 , H01S5/222 , H01S5/2224 , H01S5/227 , H01S5/34306
摘要： A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.
摘要翻译：半导体光学集成元件包括：基板; 以及集成在基板上的激光二极管和调制器。激光二极管包括具有芯层的嵌入式波导，其两侧嵌入半导体材料中。调制器包括具有核心层的高台面脊波导，其两侧都不嵌入半导体材料中。激光二极管和调制器中的核心层是条形的。

4. 发明申请

US20110305255A1 SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体光学集成元件及其制造方法
公开(公告)号：US20110305255A1
公开(公告)日：2011-12-15
申请号：US13020028
申请日：2011-02-03
申请人： Eitaro Ishimura , Kazuhisa Takagi , Keisuke Matsumoto , Takeshi Saito
发明人： Eitaro Ishimura , Kazuhisa Takagi , Keisuke Matsumoto , Takeshi Saito
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： H01S5/0265 , B82Y20/00 , G02B6/122 , G02B2006/12097 , G02F1/2257 , H01S5/02461 , H01S5/026 , H01S5/1014 , H01S5/12 , H01S5/222 , H01S5/2224 , H01S5/227 , H01S5/34306
摘要： A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.
摘要翻译：半导体光学集成元件包括：基板; 以及集成在基板上的激光二极管和调制器。激光二极管包括具有芯层的嵌入式波导，其两侧嵌入半导体材料中。调制器包括具有核心层的高台面脊波导，其两侧都不嵌入半导体材料中。激光二极管和调制器中的核心层是条形的。

5. 发明授权

US07875943B2 Semiconductor photoreceptor device 有权
标题翻译：半导体感光器件
公开(公告)号：US07875943B2
公开(公告)日：2011-01-25
申请号：US12475668
申请日：2009-06-01
申请人： Masaharu Nakaji , Eitaro Ishimura
发明人： Masaharu Nakaji , Eitaro Ishimura
IPC分类号： H01L31/0232
CPC分类号： G02B6/122 , H01L31/02327 , H01L31/105
摘要： A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion.
摘要翻译：半导体光检测装置包括选择性地设置在Fe-InP衬底上的n接触层。光波导层设置在n接触层上，并且包括依次层叠在n接触层上的n包层，光吸收层和p包覆层。在n包层上设置Fe-InP电流阻挡层，使得光波导层的侧面埋设在Fe-InP电流阻挡层中。 p电极包括与光波导层的p包层电连接的接触电极，在接触电极的电流阻挡层的侧壁上延伸并在Fe-InP衬底上延伸的引出电极部以及电极焊盘，其在所述电极焊盘与所述Fe-InP衬底的表面之间，在所述Fe-InP衬底的表面上设置有SiN膜，并且与所述引出电极部连接。

6. 发明申请

US20100006967A1 SEMICONDUCTOR PHOTODETECTOR 有权
标题翻译： SEMICONDUCTOR PHOTODETEOROR
公开(公告)号：US20100006967A1
公开(公告)日：2010-01-14
申请号：US12327861
申请日：2008-12-04
申请人： Eitaro Ishimura , Masaharu Nakaji
发明人： Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/02162 , H01L31/0304 , H01L31/03046 , H01L31/105 , Y02E10/544
摘要： A semiconductor photodetector comprises: a semiconductor substrate; a first multilayer reflective layer on a first surface of the semiconductor substrate and including semiconductor layers; a first optically-resonant layer on the first multilayer reflective layer; a second multilayer reflective layer on the first optically-resonant layer and including semiconductor layers; a light absorbing layer on the second multilayer reflective layer; a reflective film on the light absorbing layer; and an antireflective film on a second surface of the semiconductor substrate. The first optically-resonant layer has a larger thickness than the semiconductor layers of the first and second multilayer reflective layers. The combined optical thickness of the layers between the second multilayer reflective layer and the reflective film is not equal to the optical thickness of the first optically-resonant layer.
摘要翻译：半导体光电检测器包括：半导体衬底; 半导体衬底的第一表面上的第一多层反射层，包括半导体层; 第一多层反射层上的第一光学共振层; 在所述第一光学谐振层上的第二多层反射层，并且包括半导体层; 在所述第二多层反射层上的光吸收层; 光吸收层上的反射膜; 以及在半导体衬底的第二表面上的抗反射膜。第一光学共振层具有比第一和第二多层反射层的半导体层更大的厚度。第二多层反射层和反射膜之间的层的组合光学厚度不等于第一光谐振层的光学厚度。

7. 发明申请

US20090294787A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20090294787A1
公开(公告)日：2009-12-03
申请号：US12269206
申请日：2008-11-12
申请人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu
发明人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu
IPC分类号： H01L33/00
CPC分类号： H01L31/105 , B82Y20/00 , H01L31/02327 , H01L31/103 , H01L31/1075 , H01S5/18361 , H01S5/323 , H01S2301/173
摘要： An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.
摘要翻译：一种光半导体器件包括依次配置在半导体衬底上的第一导电类型的分布布拉格反射层，第一导电类型的失真拉伸层，光吸收层和第二导电类型的半导体层。失真弛豫层与半导体基板相同。分布布拉格反射层和光吸收层之间的层的总光学长度是检测到的入射光的波长的一半的整数倍。

8. 发明申请

US20090243013A1 SEMICONDUCTOR PHOTORECEPTOR DEVICE 有权
公开(公告)号：US20090243013A1
公开(公告)日：2009-10-01
申请号：US12475668
申请日：2009-06-01
申请人： Masaharu Nakaji , Eitaro Ishimura
发明人： Masaharu Nakaji , Eitaro Ishimura
IPC分类号： H01L31/0232
CPC分类号： G02B6/122 , H01L31/02327 , H01L31/105
摘要： A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion.
摘要翻译：半导体光检测装置包括选择性地设置在Fe-InP衬底上的n接触层。光波导层设置在n接触层上，并且包括依次层叠在n接触层上的n包层，光吸收层和p包覆层。在n包层上设置Fe-InP电流阻挡层，使得光波导层的侧面埋设在Fe-InP电流阻挡层中。 p电极包括与光波导层的p包层电连接的接触电极，在接触电极的电流阻挡层的侧壁上延伸并在Fe-InP衬底上延伸的引出电极部以及电极焊盘，其在所述电极焊盘与所述Fe-InP衬底的表面之间，在所述Fe-InP衬底的表面上设置有SiN膜，并且与所述引出电极部连接。

9. 发明申请

US20080144994A1 BURIED-WAVEGUIDE-TYPE LIGHT RECEIVING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：接收波导型光接收元件及其制造方法
公开(公告)号：US20080144994A1
公开(公告)日：2008-06-19
申请号：US11774639
申请日：2007-07-09
申请人： Masaharu Nakaji , Eitaro Ishimura
发明人： Masaharu Nakaji , Eitaro Ishimura
IPC分类号： G02B6/42 , H01L31/102
CPC分类号： H01L31/105 , H01L31/0352 , H01L31/1035 , H01L31/107
摘要： A buried-waveguide light detecting element includes an n-type cladding layer on a Fe—InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refractive index equal to or higher than that of the n-type cladding layer and undoped or having an impurity concentration of 1×1017 cm−3 or less, lower than the impurity concentration in the n-type light guide layer, a light absorption layer having a refractive index higher than that of the i-light guide layer, a p-type light guide layer, and a p-type cladding layer are successively layered in mesa form, from the Fe—InP substrate, and a blocking layer on the Fe—InP substrate and in which side walls of the waveguide are embedded.
摘要翻译：掩埋波导光检测元件包括在Fe-InP衬底上的n型包覆层，n型包层的一部分上的波导，其中n型导光层，i型光导层的折射率等于或高于n型包层的折射率，并且不掺杂或杂质浓度为1×10 -3 -3 -3以下，低于 n型导光层中的杂质浓度，折射率高于i导光层的光吸收层，p型导光层和p型包覆层依次层叠在来自Fe-InP衬底的台面形状，以及Fe-InP衬底上的阻挡层，并且其中嵌入有波导的侧壁。

10. 发明授权

US07187013B2 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US07187013B2
公开(公告)日：2007-03-06
申请号：US11136466
申请日：2005-05-25
申请人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
发明人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L31/03046 , H01L31/107 , H01L31/1075 , Y02E10/544
摘要： An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, has a thickness of 0.6 μm or less, and is located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer. The thickness of the semiconductor light-absorbing layer is 0.5 μm or more.
摘要翻译：雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法层和第二导电类型半导体层。雪崩光电二极管还包括抑制半导体光吸收层中的电荷载流子的倍增的增殖抑制层，其厚度为0.6μm以下，位于半导体光吸收层与第二导电型半导体层之间。半导体光吸收层的厚度为0.5μm以上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式