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21. 发明申请

US20130140582A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130140582A1
公开(公告)日：2013-06-06
申请号：US13816511
申请日：2011-04-15
申请人： Tsuyoshi Kawakami , Akihiko Furukawa , Naruhisa Miura , Yasuhiro Kagawa , Kenji Hamada , Yoshiyuki Nakaki
发明人： Tsuyoshi Kawakami , Akihiko Furukawa , Naruhisa Miura , Yasuhiro Kagawa , Kenji Hamada , Yoshiyuki Nakaki
IPC分类号： H01L29/12 , H01L21/265
CPC分类号： H01L29/12 , H01L21/0465 , H01L21/265 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/0878 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/66128 , H01L29/66143 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/872
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. A RESURF layer (101) including a plurality of P-type implantation layers having a relatively low concentration of P-type impurity is formed adjacent to an active region (2). The RESURF layer (101) includes a first RESURF layer (11), a second RESURF layer (12), a third RESURF layer (13), a fourth RESURF layer (14), and a fifth RESURF layer (15) that are arranged sequentially from the P-type base (2) side so as to surround the P-type base (2). The second RESURF layer (12) is configured with small regions (11′) having an implantation amount equal to that of the first RESURF layer (11) and small regions (13′) having an implantation amount equal to that of the third RESURF layer (13) being alternately arranged in multiple. The fourth RESURF layer (14) is configured with small regions (13′) having an implantation amount equal to that of the third RESURF layer (13) and small regions (15′) having an implantation amount equal to that of the fifth RESURF layer (15) being alternately arranged in multiple.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。在活性区域（2）附近形成包括具有相对低浓度的P型杂质的多个P型注入层的RESURF层（101）。 RESURF层（101）包括第一RESURF层（11），第二RESURF层（12），第三RESURF层（13），第四RESURF层（14）和第五RESURF层（15）从P型基底（2）侧顺序地包围P型基底（2）。第二RESURF层（12）配置有具有等于第一RESURF层（11）的注入量的小区域（11'）和具有等于第三RESURF层的注入量的小区域（13'）（13）交替布置成多个。第四RESURF层（14）配置有具有等于第三RESURF层（13）的注入量的小区域（13'）和具有等于第五RESURF层的注入量的小区域（15'）（15）交替排列成多个。

22. 发明申请

US20150162219A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150162219A1
公开(公告)日：2015-06-11
申请号：US14412847
申请日：2012-07-11
申请人： Mamoru Terai , Shiori Idaka , Yoshiyuki Nakaki , Yoshiyuki Suehiro
发明人： Mamoru Terai , Shiori Idaka , Yoshiyuki Nakaki , Yoshiyuki Suehiro
IPC分类号： H01L21/56 , H01L23/31 , H01L29/417 , H01L21/78
CPC分类号： H01L21/56 , H01L21/78 , H01L23/31 , H01L23/3107 , H01L23/3135 , H01L23/4334 , H01L23/49503 , H01L23/49548 , H01L23/49568 , H01L23/562 , H01L24/36 , H01L24/37 , H01L24/40 , H01L29/417 , H01L2224/32245 , H01L2224/37147 , H01L2224/40137 , H01L2224/83801 , H01L2224/8384 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/84
摘要： A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.
摘要翻译：用于功率控制的多个半导体元件形成在半导体衬底上。覆盖交叉区域的应力松弛树脂层，形成分割相邻的半导体元件交叉的带状切割区域。切割交叉区域以切割应力松弛树脂层以获得单独的半导体元件。因此，即使利用SiC等的化合物半导体基板制造的半导体元件，也可以使用与密封树脂相比具有高粘合强度并且不太可能由于操作期间的热应力而引起的密封树脂的破裂或剥离的半导体器件，得到。

23. 发明授权

US06576556B2 Method of manufacturing semiconductor device and method of manufacturing infrared image sensor 失效
标题翻译：制造半导体器件的方法和制造红外图像传感器的方法
公开(公告)号：US06576556B2
公开(公告)日：2003-06-10
申请号：US09917277
申请日：2001-07-30
申请人： Masafumi Kimata , Yoshiyuki Nakaki
发明人： Masafumi Kimata , Yoshiyuki Nakaki
IPC分类号： H01L21311
CPC分类号： H01L27/14649 , H01L21/3065 , H01L21/31116 , H01L27/14632 , H01L27/14687
摘要： A method of manufacturing an infrared image sensor in which an etching gas is introduced through etching holes into a semiconductor substrate to form a hollow portion. The etching gas is introduced only through an etching hole in a splicing pillar when etching is started. This method provides an etching configuration which has a largest depth right beneath the splicing pillar and which becomes shallower toward ends of the substrate, and therefore there is no need for forming deep etching stoppers.
摘要翻译：一种制造红外图像传感器的方法，其中蚀刻气体通过蚀刻孔被引入到半导体衬底中以形成中空部分。当蚀刻开始时，蚀刻气体仅通过拼接柱中的蚀刻孔引入。该方法提供了在拼接柱正下方具有最大深度并且朝向基板端部变浅的蚀刻构造，因此不需要形成深蚀刻阻挡件。

24. 发明授权

US06552344B1 Infrared detector and method of making the infrared detector 失效
标题翻译：红外探测器及制作红外探测器的方法
公开(公告)号：US06552344B1
公开(公告)日：2003-04-22
申请号：US09631988
申请日：2000-08-03
申请人： Takanori Sone , Tomohiro Ishikawa , Yoshiyuki Nakaki
发明人： Takanori Sone , Tomohiro Ishikawa , Yoshiyuki Nakaki
IPC分类号： G01J502
CPC分类号： G01J5/10 , G01J5/20
摘要： An infrared detector includes an optical cavity structure with an infrared reflection film on a semiconductor substrate. The infrared reflection film and an infrared absorption film provide high efficiency infrared detection.
摘要翻译：红外检测器包括在半导体衬底上具有红外反射膜的光腔结构。红外线反射膜和红外线吸收膜提供高效率的红外线检测。

25. 发明授权

US09543252B2 Semiconductor apparatus and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09543252B2
公开(公告)日：2017-01-10
申请号：US14412778
申请日：2012-07-11
申请人： Mamoru Terai , Shiori Idaka , Kei Yamamoto , Yoshiyuki Nakaki
发明人： Mamoru Terai , Shiori Idaka , Kei Yamamoto , Yoshiyuki Nakaki
IPC分类号： H01L23/00 , H01L23/495 , H01L23/29 , H01L23/373 , H01L21/56 , H01L21/78 , H01L29/16 , H01L23/31 , H01L23/433 , H01L25/07
CPC分类号： H01L23/562 , H01L21/56 , H01L21/78 , H01L23/293 , H01L23/3107 , H01L23/3135 , H01L23/3171 , H01L23/3185 , H01L23/3736 , H01L23/4334 , H01L23/49579 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/072 , H01L29/1608 , H01L2224/02166 , H01L2224/0382 , H01L2224/04042 , H01L2224/05553 , H01L2224/29101 , H01L2224/32245 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4847 , H01L2224/73265 , H01L2924/10272 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012
摘要： A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.
摘要翻译：设置在碳化硅衬底上的多个半导体器件分别设置有电极层。在碳化硅衬底的暴露表面的区域处切割碳化硅衬底，其分离电极层以单独地分离半导体器件。应力松弛树脂被施加到每个单独分离的半导体器件以覆盖其上具有电极层的半导体器件的该表面的外周端部处的暴露表面。因此，可以获得半导体装置，其也允许具有碳化硅或类似化合物半导体衬底的半导体器件通过大的粘合强度粘附到密封剂树脂，并且因此允许密封剂树脂通过热可靠性更小，可剥离性更差操作引起的压力。

26. 发明申请

US20150171026A1 SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20150171026A1
公开(公告)日：2015-06-18
申请号：US14412778
申请日：2012-07-11
申请人： Mamoru Terai , Shiori Idaka , Kei Yamamoto , Yoshiyuki Nakaki
发明人： Mamoru Terai , Shiori Idaka , Kei Yamamoto , Yoshiyuki Nakaki
IPC分类号： H01L23/00 , H01L21/56 , H01L23/495 , H01L23/29 , H01L23/373 , H01L21/78 , H01L29/16
CPC分类号： H01L23/562 , H01L21/56 , H01L21/78 , H01L23/293 , H01L23/3107 , H01L23/3135 , H01L23/3171 , H01L23/3185 , H01L23/3736 , H01L23/4334 , H01L23/49579 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/072 , H01L29/1608 , H01L2224/02166 , H01L2224/0382 , H01L2224/04042 , H01L2224/05553 , H01L2224/29101 , H01L2224/32245 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4847 , H01L2224/73265 , H01L2924/10272 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012
摘要： A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.
摘要翻译：设置在碳化硅衬底上的多个半导体器件分别设置有电极层。在碳化硅衬底的暴露表面的区域处切割碳化硅衬底，其分离电极层以单独地分离半导体器件。应力松弛树脂被施加到每个单独分离的半导体器件以覆盖其上具有电极层的半导体器件的该表面的外周端部处的暴露表面。因此，可以获得半导体装置，其也允许具有碳化硅或类似化合物半导体衬底的半导体器件通过大的粘合强度粘附到密封剂树脂，并且因此允许密封剂树脂通过热可靠性更小，可剥离性更差操作引起的压力。

27. 发明授权

US09059086B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09059086B2
公开(公告)日：2015-06-16
申请号：US13979564
申请日：2011-06-09
申请人： Yuji Ebiike , Takahiro Nakatani , Hiroshi Watanabe , Yoshio Fujii , Sunao Aya , Yoshiyuki Nakaki , Tsuyoshi Kawakami , Shuhei Nakata
发明人： Yuji Ebiike , Takahiro Nakatani , Hiroshi Watanabe , Yoshio Fujii , Sunao Aya , Yoshiyuki Nakaki , Tsuyoshi Kawakami , Shuhei Nakata
IPC分类号： H01L21/265 , H01L21/76 , H01L21/266 , H01L29/06 , H01L29/16 , H01L29/66 , H01L21/04 , H01L23/544
CPC分类号： H01L21/266 , H01L21/0465 , H01L23/544 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/872 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (d) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.
摘要翻译：能够抑制高电场的产生和防止发生电介质击穿的半导体装置及其制造方法。制造半导体器件的方法包括：（a）制备作为由第一导电类型的碳化硅半导体构成的接地的n +衬底，（b）通过使用抗蚀剂形成围绕n +衬底上的元件区域的凹陷结构图案，以及（d）通过通过抗蚀剂图案的杂质注入，在凹部结构的凹部底面和凹部侧面中形成作为第二导电类型的杂质层的保护环注入层，以及凹陷结构被杂质层覆盖。

28. 发明申请

US20130221477A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130221477A1
公开(公告)日：2013-08-29
申请号：US13883073
申请日：2011-12-22
申请人： Hiroshi Watanabe , Naoki Yutani , Yoshiyuki Nakaki , Kenichi Ohtsuka
发明人： Hiroshi Watanabe , Naoki Yutani , Yoshiyuki Nakaki , Kenichi Ohtsuka
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L27/0207 , H01L29/0619 , H01L29/0623 , H01L29/1608 , H01L29/6606
摘要： A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n−-type semiconductor layer; and a p-type surface layer formed in a central portion of each of cells. In a contact cell, the p-type buried layer is in contact with the p-type surface layer. The semiconductor device further includes: a p+-type contact layer formed on the p-type surface layer of the contact cell; and an anode electrode provided on the n−-type semiconductor layer. The anode electrode forms a Schottky junction with the n−-type semiconductor layer and forms an ohmic junction with the p+-type contact layer.
摘要翻译：可以在切换时实现高速运转的半导体装置等。半导体器件包括：埋在n型半导体层内的p型掩埋层; 以及形成在每个单元的中心部分的p型表面层。在接触电池中，p型掩埋层与p型表面层接触。半导体器件还包括：形成在接触单元的p型表面层上的p +型接触层; 以及设置在n型半导体层上的阳极电极。阳极与n型半导体层形成肖特基结，并与p +型接触层形成欧姆结。

29. 发明授权

US07825379B2 Thermal-type infrared image sensing device and method of producing the same 有权
标题翻译：热式红外图像感测装置及其制造方法
公开(公告)号：US07825379B2
公开(公告)日：2010-11-02
申请号：US12258764
申请日：2008-10-27
申请人： Yoshiyuki Nakaki
发明人： Yoshiyuki Nakaki
IPC分类号： H01L25/00
CPC分类号： H01L27/14649 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/08 , G01J5/0853 , G01J5/20 , G01J2005/0077 , G01J2005/068
摘要： A thermal-type infrared image sensing device and method of producing a thermal-type infrared image sensing device are provided. The thermal-type infrared image sensing device includes pixel elements that are two-dimensionally arranged on a semiconductor substrate. Each pixel element includes a detector that detects temperature, an infrared-light absorber that absorbs incident infrared light and that converts the light into heat, and a support that supports the detector apart from the semiconductor substrate. The thermal-type infrared image sensing device also includes reference-pixel elements that are arranged adjacent to and along a row of the pixel elements. Each of the reference pixels generates a reference signal, and each of the reference pixels includes a structure that shields a detector from incident infrared light. The detectors of the pixel elements and the reference-pixel elements are each connected to the semiconductor substrate through the respective supports.
摘要翻译：提供一种热式红外图像感测装置及其制造方法。热型红外图像感测装置包括二维排列在半导体基板上的像素元件。每个像素元件包括检测温度的检测器，吸收入射的红外光并将光转换成热的红外光吸收体，以及将检测器支撑在半导体衬底之外的支撑件。热型红外图像感测装置还包括被布置为相邻并沿着像素元件行的参考像素元件。每个参考像素产生参考信号，并且每个参考像素包括屏蔽检测器不受入射红外光的结构。像素元件和参考像素元件的检测器各自通过相应的支撑件连接到半导体衬底。

30. 发明授权

US5998816A Sensor element with removal resistance region 失效
标题翻译：具有去除电阻区域的传感器元件
公开(公告)号：US5998816A
公开(公告)日：1999-12-07
申请号：US926974
申请日：1997-09-10
申请人： Yoshiyuki Nakaki , Tomohiro Ishikawa , Masashi Ueno , Hisatoshi Hata , Masafumi Kimata
发明人： Yoshiyuki Nakaki , Tomohiro Ishikawa , Masashi Ueno , Hisatoshi Hata , Masafumi Kimata
IPC分类号： G01D21/00 , B81B3/00 , B81C1/00 , G01P15/08 , H01L21/302 , H01L21/3065 , H01L37/02 , H01L27/20 , H01L29/84
CPC分类号： H01L37/02 , B81C1/00571 , G01P15/0802 , B81B2201/0278 , B81B2207/015 , B81C2201/014 , Y10S73/01 , Y10S73/04
摘要： A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.
摘要翻译：一种传感器元件，设置有具有半导体电路的硅衬底，形成在硅衬底上并连接到半导体电路的感测元件部分，以及通过去除感测元件部分下方的硅衬底部分形成的空腔部分，其中在半导体电路和空腔部分之间的硅衬底中提供具有抵抗衬底移除的去除电阻区域。

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