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    • 25. 发明授权
    • Mobile communication terminal
    • 移动通信终端
    • US07027805B1
    • 2006-04-11
    • US09630584
    • 2000-08-03
    • Masaki SeikeTetsuya Yamaguchi
    • Masaki SeikeTetsuya Yamaguchi
    • H04M3/00G06F12/00
    • G06F11/1441G06F12/0246G06F2212/1036G06F2212/7211H04M1/2745Y10S707/99953
    • A mobile communication terminal comprises an information managing portion 1, and a nonvolatile storing medium 2 attached to the information managing portion 1, and the nonvolatile storing medium 2 has a plurality of memory areas for storing same information items in sequence. According to this configuration, when storing of the information items, e.g., the time information, etc., whose access frequency is high are updated by using the nonvolatile storing medium, the burden imposed on the nonvolatile storing medium can be reduced by using different areas. Thus, the information items having a high updating frequency, e.g., the time information, etc. can be stored in the nonvolatile storing medium whose lifetime is short and then employed.
    • 移动通信终端包括信息管理部分1和附加到信息管理部分1的非易失性存储介质2,并且非易失性存储介质2具有用于依次存储相同信息项的多个存储区域。 根据该结构,通过使用非易失性存储介质来更新访问频率高的信息项目的时间信息等的存储,可以通过使用不同的区域来减少对非易失性存储介质的负担 。 因此,具有较高更新频率的信息项例如时间信息等可以存储在其寿命短并随后使用的非易失性存储介质中。
    • 27. 发明授权
    • Ferroelectric semiconductor memory
    • 铁电半导体存储器
    • US06809951B2
    • 2004-10-26
    • US10279853
    • 2002-10-25
    • Tetsuya Yamaguchi
    • Tetsuya Yamaguchi
    • G11C1122
    • G11C11/22
    • A ferroelectric semiconductor memory includes a cell array in which a plurality of ferroelectric memory cells are arranged in a matrix format, and a circuit section. Each memory cell includes a field-effect transistor and a capacitor formed as a gate electrode section of the field-effect transistor and having a stacked structure of metal film/ferroelectric film/metal film. The circuit section selectively executes a read mode, program mode, and erase mode for performing data read, programming, and erase to the memory cells, and a rewrite mode for rewriting data stored in each memory cell.
    • 铁电半导体存储器包括以矩阵形式布置多个铁电存储单元的单元阵列和电路部分。 每个存储单元包括场效应晶体管和形成为场效应晶体管的栅电极部分并具有金属膜/铁电体膜/金属膜的堆叠结构的电容器。 电路部分选择性地执行用于对存储器单元进行数据读取,编程和擦除的读取模式,程序模式和擦除模式以及用于重写存储在每个存储器单元中的数据的重写模式。