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21. 发明申请

US20080230804A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080230804A1
公开(公告)日：2008-09-25
申请号：US12036703
申请日：2008-02-25
申请人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
发明人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/872 , H01L21/283
CPC分类号： H01L29/47 , H01L21/28518 , H01L21/76814 , H01L21/823814 , H01L21/823835 , H01L29/475
摘要： A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.
摘要翻译：公开了一种半导体器件，其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间，介于其间的介电层，用于在n型扩散层和第一金属之间电连接的第一接触电极电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。

22. 发明申请

US20080049394A1 Method, apparatus and computer system for air mover configuration 审中-公开
标题翻译：风机配置方法，装置和计算机系统
公开(公告)号：US20080049394A1
公开(公告)日：2008-02-28
申请号：US11509110
申请日：2006-08-23
申请人： Yoshifumi Nishi
发明人： Yoshifumi Nishi
IPC分类号： G05D23/00 , H05K7/20
CPC分类号： G05D23/19 , G06F1/20
摘要： Some embodiments of a method, apparatus and computer system are described for configuring one or more air movers. A computer system may include a housing and an air mover coupled to an electronic device and positioned in relative proximity to an electronic component. In some embodiments, the air mover has an intake region, and is configured such that the intake region may include a first bisection larger than a second bisection. In some embodiments, a configuration module may be coupled to the air mover, such that the configuration module may alter the configuration of the air mover such that the intake region is altered. Other embodiments are described.
摘要翻译：描述了一种方法，装置和计算机系统的一些实施例，用于配置一个或多个鼓风机。计算机系统可以包括壳体和联接到电子设备并且相对靠近电子部件定位的空气推动器。在一些实施例中，空气移动器具有进气区域，并且被构造成使得进气区域可以包括大于第二平分度的第一二分线。在一些实施例中，配置模块可以联接到空气推动器，使得配置模块可以改变空气推动器的构造，使得进气区域被改变。描述其他实施例。

23. 发明申请

US20070247906A1 Fin type memory cell 审中-公开
标题翻译：鳍式存储单元
公开(公告)号：US20070247906A1
公开(公告)日：2007-10-25
申请号：US11723335
申请日：2007-03-19
申请人： Hiroshi Watanabe , Yoshifumi Nishi , Atsuhiro Kinoshita
发明人： Hiroshi Watanabe , Yoshifumi Nishi , Atsuhiro Kinoshita
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , H01L27/115 , H01L27/11519 , H01L29/785
摘要： A Fin-type memory cell according to an example of the present invention includes a fin-shaped active area, a floating gate along a side surface of the fin-shaped active area, and two control gate electrodes arranged in a longitudinal direction of the fin-shaped active area, and sandwiching the floating gate.
摘要翻译：根据本发明的实施例的鳍型存储单元包括鳍状有源区域，沿着鳍状有源区域的侧表面的浮置栅极和沿翅片的纵向布置的两个控制栅极电极形状的活动区域，并夹着浮动门。

24. 发明申请

US20180358826A1 WIRELESS CHARGING STAND 审中-公开
公开(公告)号：US20180358826A1
公开(公告)日：2018-12-13
申请号：US15756053
申请日：2015-09-25
申请人： Stephen John ALLEN , Gregory A. PEEK , Yoshifumi NISHI , Rolf LAIDO , Shaun Gerrit IMMEKER , Kerry A. STEVENS , Andrew LARSON , Ralph V. MIELE , Kimi JENSEN , Duck Young KONG , Dan H. GERBUS , Intel Corporation
发明人： Stephen John Allen , Gregory A. Peek , Yoshifumi Nishi , Rolf Laido , Shaun Gerrit Immeker , Kerry A. Stevens , Andrew Larson , Ralph V. Miele , Kimi Jensen , Duck Young Kong , Dan H. Gerbus
IPC分类号： H02J7/00 , H02J7/02 , H02J50/12 , H02J50/40
摘要： Particular embodiments described herein provide for an electronic device, that includes a first housing and a wireless charging stand. The first housing can include a display. The wireless charging stand can include a power receiving unit and is configured to wireless charge the electronic device and support the first housing at different viewing angles of the display.

25. 发明申请

US20180082502A1 INTERNET OF THINGS SMART ENTRY 审中-公开
公开(公告)号：US20180082502A1
公开(公告)日：2018-03-22
申请号：US15269585
申请日：2016-09-19
申请人： David W. Browning , Mark MacDonald , Yoshifumi Nishi
发明人： David W. Browning , Mark MacDonald , Yoshifumi Nishi
IPC分类号： G07C9/00 , H04L29/08
CPC分类号： G07C9/00007 , G07C9/00031 , G07C9/00087 , G07C9/00309 , G07C2009/00769 , H04L67/02 , H04L67/12 , H04L67/26 , H04L67/306 , H04W4/70 , H04W4/80 , H04W76/10 , H04W88/02 , H04W88/08
摘要： Various systems and methods for providing a smart entry system are described herein. A smart entry system includes a detector to detect a person near a portal to a room; a transceiver to attempt to establish a wireless connection between the smart entry system and a user device associated with the person; and a user interface to present a notification to the person based on a state of the wireless connection.

26. 发明授权

US09007823B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09007823B2
公开(公告)日：2015-04-14
申请号：US13480853
申请日：2012-05-25
申请人： Takahiro Kurita , Yoshifumi Nishi , Kosuke Tatsumura , Atsuhiro Kinoshita
发明人： Takahiro Kurita , Yoshifumi Nishi , Kosuke Tatsumura , Atsuhiro Kinoshita
IPC分类号： G11C11/34 , H01L21/28 , G11C7/02 , G11C11/403 , H01L29/423 , H01L29/51 , H01L27/108
CPC分类号： H01L21/28291 , G11C7/02 , G11C11/403 , H01L21/28282 , H01L27/108 , H01L27/10873 , H01L29/4234 , H01L29/516
摘要： A semiconductor device according to an embodiment includes: a first transistor including a gate connected to a first interconnection, a first source, and a first drain, one of the first source and the first drain being connected to a second interconnection; and a second transistor including a gate structure, a second source, and a second drain, one of the second source and second drain being connected to a third interconnection and the other of the second source and second drain being connected to a fourth interconnection. The gate structure includes a gate insulation film, a gate electrode, and a threshold-modulating film provided between the gate insulation film and the gate electrode to modulate a threshold voltage, the other of the first source and first drain of the first transistor is connected to the gate electrode.
摘要翻译：根据实施例的半导体器件包括：第一晶体管，包括连接到第一互连的栅极，第一源极和第一漏极，第一源极和第一漏极中的一个连接到第二互连; 以及第二晶体管，其包括栅极结构，第二源极和第二漏极，所述第二源极和第二漏极中的一个连接到第三互连，并且所述第二源极和第二漏极中的另一个连接到第四互连。栅极结构包括栅极绝缘膜，栅极电极和设置在栅极绝缘膜和栅电极之间以调节阈值电压的阈值调制膜，第一晶体管的第一源极和第一漏极中的另一个被连接到栅电极。

27. 发明授权

US08450208B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08450208B2
公开(公告)日：2013-05-28
申请号：US13081629
申请日：2011-04-07
申请人： Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
发明人： Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
IPC分类号： H01L21/283
CPC分类号： H01L21/28518 , H01L29/1608 , H01L29/41708 , H01L29/456 , H01L29/6606 , H01L29/66068 , H01L29/6609 , H01L29/66272 , H01L29/665 , H01L29/6659 , H01L29/66712 , H01L29/732 , H01L29/7833 , H01L29/861
摘要： In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.
摘要翻译：在根据示例性实施例的半导体器件制造方法中，在n型半导体上沉积含硫的含硫膜，在含硫膜上沉积含有第一金属的第一金属膜，进行热处理通过使n型半导体和含硫膜反应形成金属半导体化合物膜，并将硫引入到正在形成的n型半导体与金属半导体化合物膜之间的界面上。

28. 发明申请

US20120155020A1 APPARATUS AND SYSTEM FOR IMPROVED THERMAL RADIATION FOR A MOBILE COMPUTING DEVICE AND CASE 有权
标题翻译：用于移动计算设备和案例的改进的热辐射的装置和系统
公开(公告)号：US20120155020A1
公开(公告)日：2012-06-21
申请号：US12970859
申请日：2010-12-16
申请人： Yoshifumi Nishi
发明人： Yoshifumi Nishi
IPC分类号： H05K7/00
CPC分类号： G06F1/203
摘要： Embodiments of an apparatus and system are described for a thermally radiating mobile computing device and case. An apparatus may comprise, for example, a thermally radiating case for a mobile computing device having a first portion arranged to receive the mobile computing device, a thermally conductive coupling arranged to removably couple the case to one or more internal heat generating components of the mobile computing device, and a second portion thermally coupled to the first portion and the thermally conductive coupling, the second portion comprising one or more thermally conductive materials arranged to radiate thermal energy away from the one or more heat generating components. Other embodiments are described and claimed.
摘要翻译：对于热辐射移动计算设备和情况描述了设备和系统的实施例。设备可以包括例如用于移动计算设备的散热壳体，其具有布置成接收移动计算设备的第一部分，布置成将壳体可移除地耦合到移动设备的一个或多个内部发热部件的导热联接器计算装置，以及热耦合到第一部分和导热联接件的第二部分，第二部分包括一个或多个导热材料，其布置成将热能辐射离开一个或多个发热部件。描述和要求保护其他实施例。

29. 发明授权

US07642604B2 Semiconductor device and fabrication method of same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07642604B2
公开(公告)日：2010-01-05
申请号：US12036703
申请日：2008-02-25
申请人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
发明人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L23/48
CPC分类号： H01L29/47 , H01L21/28518 , H01L21/76814 , H01L21/823814 , H01L21/823835 , H01L29/475
摘要： A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.
摘要翻译：公开了一种半导体器件，其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间，介于其间的介电层，用于在n型扩散层和第一金属之间电连接的第一接触电极电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。

30. 发明申请

US20090134388A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090134388A1
公开(公告)日：2009-05-28
申请号：US12203409
申请日：2008-09-03
申请人： Takashi YAMAUCHI , Yoshifumi Nishi , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
发明人： Takashi YAMAUCHI , Yoshifumi Nishi , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
IPC分类号： H01L29/08 , H01L21/06
CPC分类号： H01L21/26513 , H01L21/26506 , H01L21/823814 , H01L29/665 , H01L29/7833
摘要： A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type MISFET formed on a semiconductor substrate. The p-MISFET has a channel region in the substrate, a gate insulating film on the channel region, a gate electrode on the gate insulating film, and a pair of laterally spaced-apart source and drain electrodes on both sides of the channel region. These source/drain electrodes are each formed of a nickel (Ni)-containing silicide layer. The p-MISFET further includes an interface layer which is formed on the substrate side of an interface between the substrate and each source/drain electrode. This interface layer contains magnesium (Mg), calcium (Ca) or barium (Ba) therein. A fabrication method of the semiconductor device is also disclosed.
摘要翻译：公开了一种具有金属绝缘体半导体场效应晶体管（MISFET）的半导体器件，具有接口电阻降低的源/漏电极。该器件包括形成在半导体衬底上的p型MISFET。 p-MISFET在衬底中具有沟道区，沟道区上的栅极绝缘膜，栅极绝缘膜上的栅电极，以及沟道区两侧的一对侧向间隔开的源极和漏极。这些源极/漏极各自由含镍（Ni）的硅化物层形成。 p-MISFET还包括界面层，该界面层形成在基板和每个源极/漏极之间的界面的基板侧上。该界面层中含有镁（Mg），钙（Ca）或钡（Ba）。还公开了半导体器件的制造方法。

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