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    • 21. 发明授权
    • Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same
    • 包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
    • US07361612B2
    • 2008-04-22
    • US11447932
    • 2006-06-07
    • Sang-Jun ChoiMitsuhiro HataHan-Ku Cho
    • Sang-Jun ChoiMitsuhiro HataHan-Ku Cho
    • H01L21/469
    • G03F7/11G03F7/0758G03F7/2041
    • Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
    • 提供本发明的示例性实施方案,其包括适用于结合到阻挡组合物中的聚合物结构的范围,用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。 这些聚合物的重均分子量(Mw)为5000〜200,000道尔顿,通常可以由式I表示:式(1 + m + n)= 1; 0.1 <=(1 /(1 + m + n))<= 0.7; 0.3 <=(m /(1 + m + n))<= 0.9; 并且满足0.0 <=(n /(1 + m + n))<= 0.6; R 1,R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。 阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂,C 4〜C 6烷基的有机溶剂或溶剂体系, 基于烷烃的有机溶剂及其混合物。
    • 22. 发明申请
    • POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME
    • 聚合物和化学稳定化合物包括它们
    • US20090317744A1
    • 2009-12-24
    • US12467683
    • 2009-05-18
    • Yusuke FUJIMitsuhiro Hata
    • Yusuke FUJIMitsuhiro Hata
    • G03F7/004C08G63/00
    • C08F220/28C08F220/18Y10S430/114
    • A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n′ represents an integer of 0 to 12, Z2 represents a single bond etc., k′ represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc., and R23 represents a C1-C30 monovalent hydrocarbon group, and at least one structural unit selected from the group consisting of structural units represented by the formulae (IIIa), (IIIb), (IIIc), (IIId) and (IIIf) wherein R10 represents a hydrogen atom etc., R11 represents a methyl group, R12 is independently in each occurrence a carboxyl group etc., j represents an integer of 0 to 3, a represents an integer of 0 to 5, b represents an integer of 0 to 3, c represents an integer of 0 to (2j+2), Z3 represents a single bond etc., and k″ represents an integer of 1 to 4.
    • 一种包含由式(Ia)或(Ib)表示的结构单元的聚合物:其中R1表示氢原子等,R2表示直链,支链或环状的C1-C8烷基,R3表示甲基,n表示 0〜14的整数,Z1表示单键等,k表示1〜4的整数,R4和R5各自独立地表示氢原子等,m表示1〜3的整数,表示的结构单元 式(II)表示:其中R6和R7各自独立地表示氢原子等,R8表示甲基,R9表示氢原子等,n'表示0〜12的整数,Z2表示单键等 k表示1〜4的整数,R 21和R 22各自独立地表示氢原子等,R 23表示碳原子数为1〜30的一价烃基,以及至少一个选自以下结构单元的结构单元: 通式(IIIa),(IIIb),(IIIc),(IIId)和(IIIf) )其中R 10表示氢原子等,R 11表示甲基,R 12各自独立地表示羧基等,j表示0〜3的整数,a表示0〜5的整数,b表示整数 0〜3的整数,c表示0〜(2j + 2)的整数,Z 3表示单键等,k表示1〜4的整数。
    • 25. 发明授权
    • Polymer and chemically amplified resist composition comprising the same
    • 包含其的聚合物和化学增幅抗蚀剂组合物
    • US08048612B2
    • 2011-11-01
    • US12467683
    • 2009-05-18
    • Yusuke FujiMitsuhiro Hata
    • Yusuke FujiMitsuhiro Hata
    • G03F7/00G03F7/004C08F10/00
    • C08F220/28C08F220/18Y10S430/114
    • A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n′ represents an integer of 0 to 12, Z2 represents a single bond etc., k′ represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc., and R23 represents a C1-C30 monovalent hydrocarbon group, and at least one structural unit selected from the group consisting of structural units represented by the formulae (IIIa), (IIIb), (IIIc), (IIId) and (IIIf) wherein R10 represents a hydrogen atom etc., R11 represents a methyl group, R12 is independently in each occurrence a carboxyl group etc., j represents an integer of 0 to 3, a represents an integer of 0 to 5, b represents an integer of 0 to 3, c represents an integer of 0 to (2j+2), Z3 represents a single bond etc., and k″ represents an integer of 1 to 4.
    • 一种包含由式(Ia)或(Ib)表示的结构单元的聚合物:其中R1表示氢原子等,R2表示直链,支链或环状的C1-C8烷基,R3表示甲基,n表示 0〜14的整数,Z1表示单键等,k表示1〜4的整数,R4和R5各自独立地表示氢原子等,m表示1〜3的整数,表示的结构单元 式(II)表示:其中R6和R7各自独立地表示氢原子等,R8表示甲基,R9表示氢原子等,n'表示0〜12的整数,Z2表示单键等 k表示1〜4的整数,R 21和R 22各自独立地表示氢原子等,R 23表示碳原子数为1〜30的一价烃基,以及至少一个选自以下结构单元的结构单元: 通过式(IIIa),(IIIb),(IIIc),(IIId)和( IIIf)其中R10表示氢原子等,R11表示甲基,R12各自独立地表示羧基等,j表示0〜3的整数,a表示0〜5的整数,b表示 0〜3的整数,c表示0〜(2j + 2)的整数,Z 3表示单键等,k表示1〜4的整数。
    • 26. 发明申请
    • RESIST PROCESSING METHOD AND USE OF POSITIVE TYPE RESIST COMPOSITION
    • 电阻加工方法和正极型电阻组合物的使用
    • US20110183264A1
    • 2011-07-28
    • US13063670
    • 2009-09-08
    • Kazuhiko HashimotoMitsuhiro HataSatoshi Yamamoto
    • Kazuhiko HashimotoMitsuhiro HataSatoshi Yamamoto
    • G03F7/004G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. wherein, Ra1 represents a hydrogen atom, a halogen atom or a C1 to C3 saturated hydrocarbon group which may be substituted with a halogen atom; Ra2 represents a single bond or a divalent organic group; Ra3 represents a hydrogen atom, a C1 to C12 saturated hydrocarbon group which may be substituted with a hydroxy group etc., and Ra4 represent a C1 to C12 saturated hydrocarbon group.
    • 抗蚀剂处理方法具有以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:包含由式(XX)表示的结构单元并具有酸不稳定基团的树脂(A) 在碱性水溶液中不溶或难溶,并且通过酸的作用使碱溶液和光酸产生剂(B)溶解在基材上并干燥; (2)预烘第一抗蚀膜; (3)曝光第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)对第一抗蚀剂图案进行硬烘烤,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上,然后干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。 其中,Ra1表示氢原子,卤素原子或可被卤素原子取代的C1〜C3饱和烃基; Ra2表示单键或二价有机基团; Ra3表示氢原子,可被羟基取代的C1〜C12饱和烃基等,Ra4表示C1〜C12饱和烃基。
    • 28. 发明授权
    • Photoresist composition
    • 光刻胶组成
    • US09063414B2
    • 2015-06-23
    • US13190173
    • 2011-07-25
    • Koji IchikawaMitsuhiro HataTakahiro Yasue
    • Koji IchikawaMitsuhiro HataTakahiro Yasue
    • G03F7/004G03F7/039
    • G03F7/0045G03F7/0397
    • The present invention provides a photoresist composition comprising a resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.
    • 本发明提供一种光致抗蚀剂组合物,其包含树脂,其包含衍生自具有酸不稳定基团的化合物的结构单元,其在碱性水溶液中不溶或难溶于碱性水溶液,但通过 酸,酸产生剂和由式(I)表示的化合物:其中R1和R2在每次出现时独立地为C1-C12烃基,C1-C6烷氧基,C2-C7酰基,C2-C7 酰氧基,C 2 -C 7烷氧基羰基,硝基或卤素原子,m和n分别表示0〜4的整数。
    • 29. 发明授权
    • Photoresist composition
    • 光刻胶组成
    • US08546059B2
    • 2013-10-01
    • US12953606
    • 2010-11-24
    • Koji IchikawaTakayuki MiyagawaMitsuhiro Hata
    • Koji IchikawaTakayuki MiyagawaMitsuhiro Hata
    • G03F7/039G03F7/20G03F7/30G03F7/38
    • G03F7/0046G03F7/0045G03F7/0382G03F7/0392G03F7/0397G03F7/2041
    • The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc1 represents an aromatic group which can have one or more substituents, Rc2 and Rc3 independently each represent a hydrogen atom, an aliphatic hydrocarbon group which can have one or more substituents or an aromatic group which can have one or more substituents, Rc4 and Rc6 independently each represent a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc4 and Rc6 are bonded each other to form an alkanediyl group, Rc5 represents an aliphatic hydrocarbon group which can have one or more substituents or an amino group which can have one or two substituents, Rc7 represents a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc5 and Rc7 are bonded each other to form an alkanediyl group.
    • 本发明提供一种光致抗蚀剂组合物,其包含树脂,酸产生剂和由式(C1)表示的化合物:其中Rc1表示可以具有一个或多个取代基的芳基,Rc2和Rc3各自独立地表示氢原子, 可具有一个或多个取代基的脂族烃基或可具有一个或多个取代基的芳族基团,R c4和R c6各自独立地表示氢原子或可具有一个或多个取代基的脂族烃基,或Rc4和Rc6键合 彼此形成烷二基,Rc5表示可具有一个或多个取代基的脂族烃基或可具有一个或两个取代基的氨基,R c7表示氢原子或可具有一个或多个取代基的脂族烃基 ,或Rc5和Rc7彼此键合形成烷二基。