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1. 发明申请

US20110183264A1 RESIST PROCESSING METHOD AND USE OF POSITIVE TYPE RESIST COMPOSITION 审中-公开
标题翻译：电阻加工方法和正极型电阻组合物的使用
公开(公告)号：US20110183264A1
公开(公告)日：2011-07-28
申请号：US13063670
申请日：2009-09-08
申请人： Kazuhiko Hashimoto , Mitsuhiro Hata , Satoshi Yamamoto
发明人： Kazuhiko Hashimoto , Mitsuhiro Hata , Satoshi Yamamoto
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. wherein, Ra1 represents a hydrogen atom, a halogen atom or a C1 to C3 saturated hydrocarbon group which may be substituted with a halogen atom; Ra2 represents a single bond or a divalent organic group; Ra3 represents a hydrogen atom, a C1 to C12 saturated hydrocarbon group which may be substituted with a hydroxy group etc., and Ra4 represent a C1 to C12 saturated hydrocarbon group.
摘要翻译：抗蚀剂处理方法具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：包含由式（XX）表示的结构单元并具有酸不稳定基团的树脂（A）在碱性水溶液中不溶或难溶，并且通过酸的作用使碱溶液和光酸产生剂（B）溶解在基材上并干燥; （2）预烘第一抗蚀膜; （3）曝光第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。其中，Ra1表示氢原子，卤素原子或可被卤素原子取代的C1〜C3饱和烃基; Ra2表示单键或二价有机基团; Ra3表示氢原子，可被羟基取代的C1〜C12饱和烃基等，Ra4表示C1〜C12饱和烃基。

2. 发明申请

US20100273112A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
标题翻译：生产光电子图案的工艺
公开(公告)号：US20100273112A1
公开(公告)日：2010-10-28
申请号：US12763357
申请日：2010-04-20
申请人： Mitsuhiro Hata , Satoshi Yamamoto , Yusuke Fuji
发明人： Mitsuhiro Hata , Satoshi Yamamoto , Yusuke Fuji
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/091
摘要： The present invention provides a process for producing a photoresist pattern comprising the following steps (A) to (D): (A) a step of forming the first photoresist film on a substrate using the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, an acid generator, and a cross-linking agent, exposing the first photoresist film to radiation followed by developing the exposed first photoresist film to obtain the first photoresist pattern, (B) a step of baking the obtained first photoresist pattern at 190 to 250° C. for 10 to 60 seconds, (C) a step of forming the second photoresist film on the substrate on which the first photoresist pattern has been formed using the second photoresist composition, exposing the second photoresist film to radiation, and (D) a step of developing the exposed second photoresist film to obtain the second photoresist pattern.
摘要翻译：本发明提供一种制造光致抗蚀剂图案的方法，包括以下步骤（A）至（D）：（A）使用包含树脂的第一光致抗蚀剂组合物在基板上形成第一光致抗蚀剂膜的步骤，所述树脂包括具有其侧链酸性不稳定基团本身不溶于或难溶于碱水溶液，但通过酸，酸发生剂和交联剂的作用变得可溶于碱性水溶液中，使第一将曝光的第一光致抗蚀剂膜显影以获得第一光致抗蚀剂图案，（B）在190至250℃下烘烤获得的第一光致抗蚀剂图案10至60秒的步骤，（C）步骤在所述基板上形成所述第二光致抗蚀剂膜，使用所述第二光致抗蚀剂组合物在其上形成所述第一光致抗蚀剂图案，将所述第二光致抗蚀剂膜暴露于辐射，以及（D）旋转曝光的第二光致抗蚀剂膜以获得第二光致抗蚀剂图案。

3. 发明申请

US20110189618A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20110189618A1
公开(公告)日：2011-08-04
申请号：US13062180
申请日：2009-09-01
申请人： Mitsuhiro Hata , Nobuo Ando , Satoshi Yamamoto , Junji Shigematsu , Akira Kamabuchi
发明人： Mitsuhiro Hata , Nobuo Ando , Satoshi Yamamoto , Junji Shigematsu , Akira Kamabuchi
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
摘要翻译：抗蚀剂处理方法包括以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现通过酸，光酸产生剂（B），交联剂（C）和酸放大器（D）的作用将其溶于碱水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）硬烘烤第一抗蚀剂图案，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

4. 发明申请

US20110171586A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20110171586A1
公开(公告)日：2011-07-14
申请号：US13003178
申请日：2009-07-07
申请人： Mitsuhiro Hata , Satoshi Yamamoto , Takayuki Miyagawa
发明人： Mitsuhiro Hata , Satoshi Yamamoto , Takayuki Miyagawa
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2022 , G03F7/38 , G03F7/40
摘要： A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
摘要翻译：一种抗蚀剂处理方法，具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现通过酸，光酸产生剂（B）和交联剂（C）的作用将其溶解在碱性水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀剂膜的整个表面，然后通过掩模曝光第一抗蚀剂膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）通过掩模使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

5. 发明授权

US08003296B2 Chemically amplified positive resist composition 有权
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US08003296B2
公开(公告)日：2011-08-23
申请号：US12536386
申请日：2009-08-05
申请人： Masahiko Shimada , Kazuhiko Hashimoto , Junji Shigematsu , Takayuki Miyagawa , Satoshi Yamamoto
发明人： Masahiko Shimada , Kazuhiko Hashimoto , Junji Shigematsu , Takayuki Miyagawa , Satoshi Yamamoto
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a chemically amplified positive composition comprising: (A) a resin comprising a structural unit having an acid-labile group and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, (B) a resin comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or —(CH2)k—CO—X4—, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and a structural unit having a fluorine atom in a side chain, and an acid generator.
摘要翻译：本发明提供了一种化学放大阳性组合物，其包含：（A）包含具有酸不稳定基团的结构单元的树脂，其本身不溶于或难溶于碱性水溶液，但通过作用于酸，（B）包含由式（I）表示的结构单元的树脂：其中R1表示氢原子，卤素原子，C1-C4烷基或C1-C4全氟烷基，Z表示单键或 - （CH 2）k -CO-X 4 - ，k表示1〜4的整数，X 1，X 2，X 3，X 4各自独立地表示氧原子或硫原子，m表示1〜3的整数，n表示 0〜3的整数，侧链具有氟原子的结构单元和酸发生剂。

6. 发明授权

US11167637B2 Fuel filler structure for fuel tank 有权
公开(公告)号：US11167637B2
公开(公告)日：2021-11-09
申请号：US14390693
申请日：2012-04-12
申请人： Satoshi Yamamoto , Chiaki Kataoka , Masaki Akagi
发明人： Satoshi Yamamoto , Chiaki Kataoka , Masaki Akagi
IPC分类号： B60K15/04
摘要： To obtain a fuel filler structure for a fuel tank wherein when causing an opening and closing valve to close, it can be ensured that the opening and closing valve does not rapidly rotate to a closed position in which it closes a fuel fill inlet, and when causing the opening and closing valve to open, the opening and closing valve can be opened with a small force. A fuel filler structure is equipped with a damper on the near side of a flapper valve in the insertion direction of a fuel nozzle. When the flapper valve rotates to an open position, the damper does not act on the flapper valve, and when the flapper valve rotates to a closed position, the damper acts on the flapper valve.

7. 发明授权

US10642119B2 Electrochromic compound, electrochromic composition, and electrochromic element 有权
公开(公告)号：US10642119B2
公开(公告)日：2020-05-05
申请号：US15585201
申请日：2017-05-03
申请人： Satoshi Yamamoto , Toshiya Sagisaka , Masato Shinoda , Daisuke Goto
发明人： Satoshi Yamamoto , Toshiya Sagisaka , Masato Shinoda , Daisuke Goto
IPC分类号： C09K11/06 , G02F1/153 , C09K9/02 , G02F1/1516
CPC分类号： G02F1/153 , C09K9/02 , C09K2211/1029 , C09K2211/1044 , G02F1/15165
摘要： An electrochromic compound represented by the following formula (I) is provided:

where each of R1 to R8 and R11 to R18 independently represents any one of a hydrogen atom, a halogen atom, a monovalent organic group, the monovalent organic group having a substituent, a polymerizable functional group, and the polymerizable functional group having a substituent; and each of R9, R10, R19, and R20 independently represents any one of a hydrogen atom, an alkyl group, and an aryl group.

8. 发明授权

US10534236B2 Electrochromic compound, electrochromic composition, and electrochromic display element 有权
公开(公告)号：US10534236B2
公开(公告)日：2020-01-14
申请号：US15737115
申请日：2016-06-17
申请人： Satoshi Yamamoto , Daisuke Goto , Toshiya Sagisaka , Masato Shinoda , Mamiko Inoue , Fuminari Kaneko , Tohru Yashiro
发明人： Satoshi Yamamoto , Daisuke Goto , Toshiya Sagisaka , Masato Shinoda , Mamiko Inoue , Fuminari Kaneko , Tohru Yashiro
IPC分类号： G02F1/15 , C07D265/28 , G09F9/30 , C09K9/02 , C08F20/36 , C07D265/38 , G02F1/1516
摘要： Provided is an electrochromic compound represented by the following general formula (I) or (II) where R1 to R13 are each independently a hydrogen atom, a halogen atom, a monovalent organic group, or a polymerizable functional group, and at least one of the R1 to the R13 is a polymerizable functional group.

9. 发明授权

US09869918B2 Electrochromic apparatus, electrochromic element, and method of manufacturing electrochromic element 有权
公开(公告)号：US09869918B2
公开(公告)日：2018-01-16
申请号：US14988992
申请日：2016-01-06
申请人： Takahiko Matsumoto , Keiichiroh Yutani , Hidekazu Yaginuma , Koh Fujimura , Fuminari Kaneko , Mamiko Inoue , Sukchan Kim , Satoshi Yamamoto , Tohru Yashiro
发明人： Takahiko Matsumoto , Keiichiroh Yutani , Hidekazu Yaginuma , Koh Fujimura , Fuminari Kaneko , Mamiko Inoue , Sukchan Kim , Satoshi Yamamoto , Tohru Yashiro
IPC分类号： G02F1/155 , G02F1/1343
CPC分类号： G02F1/155 , G02F1/13439 , G02F2001/1552
摘要： An electrochromic apparatus including a first support, a first electrode, a first transparent conductive layer, an electrochromic layer, a second support, a second electrode, a second transparent conductive layer, and an electrolyte layer is provided. The first and second supports have first and second surfaces, respectively, on each of which a plurality of grooves is formed. The grooves on the second surface are facing the grooves on the first surface. The first and second electrodes are disposed at each one of the plurality of grooves of the first and second supports, respectively. The first and second transparent conductive layers are in contact with the first and second surfaces, respectively. The electrochromic layer is in contact with the first transparent conductive layer. The electrolyte layer is between the electrochromic layer and the second transparent conductive layer.

10. 发明授权

US09312036B2 Jet pump measurement pipe repair method 有权
标题翻译：喷射泵测量管修复方法
公开(公告)号：US09312036B2
公开(公告)日：2016-04-12
申请号：US13315887
申请日：2011-12-09
申请人： Yuki Minato , Toshihiro Yasuda , Kunihiko Kinugasa , Hajime Mori , Satoshi Yamamoto , Jun Suzuki , Tadahiro Mitsuhashi
发明人： Yuki Minato , Toshihiro Yasuda , Kunihiko Kinugasa , Hajime Mori , Satoshi Yamamoto , Jun Suzuki , Tadahiro Mitsuhashi
IPC分类号： G21C15/25 , F04F5/54 , G21C17/017 , G21C19/14 , G21C17/10
CPC分类号： G21C15/25 , F04F5/54 , G21C17/017 , G21C17/10 , G21C19/14 , Y02E30/40 , Y10T29/49735
摘要： In a jet pump measurement pipe repair method according to the present embodiment, a breakage part of a measurement pipe horizontally fixed to a lower part of a jet pump provided in reactor water in a reactor pressure vessel is repaired. The method has: a step of cutting and removing the measurement pipe including the breakage part; a step of retaining a connection pipe for connecting the remaining measurement pipe on the jet pump by means of a clamp; and a step of connecting ends of the remaining measurement pipe by means of the connection pipe.
摘要翻译：在根据本实施例的喷射泵测量管道修复方法中，修复水平固定到设置在反应堆压力容器中的反应器水中的喷射泵的下部的测量管的断裂部分。该方法具有：切断除去包含断裂部的测量管的步骤; 保持用于通过夹具连接喷射泵上的剩余测量管的连接管的步骤; 以及通过连接管连接剩余测量管的端部的步骤。

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