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    • 28. 发明授权
    • Semiconductor device and memory card using same
    • 半导体器件和存储卡使用相同
    • US07268611B2
    • 2007-09-11
    • US10524087
    • 2003-08-08
    • Mutsumi KikuchiNoboru AkiyamaHiroyuki ShojiFumio MurabayashiAkihiko KanoudaTakashi SaseKoji Tateno
    • Mutsumi KikuchiNoboru AkiyamaHiroyuki ShojiFumio MurabayashiAkihiko KanoudaTakashi SaseKoji Tateno
    • G05F1/10
    • G11C5/147H01L27/0688H01L27/08H02M3/156H02M2001/007
    • A semiconductor device capable of achieving downsizing without reducing the power supply efficiency and capable of reducing switching noises and a memory card using the same are disclosed. The device comprises a plurality of stages of voltage booster circuits for potentially raising a power supply voltage up to a final output voltage, a voltage control unit for controlling an output voltage at a nearby location of the final stage, and one or more internal elements to which the final output voltage is supplied. A primary voltage booster circuit at the first stage includes an inductance element, a switching element, a diode and a driver circuit. At a metal core part of the inductance element, a metal wiring line is used, which was formed by use of a fabrication process of semiconductor integrated circuits, while employing for its core part an inter-wiring layer dielectric film that was formed using the fabrication process. In addition, the switching element and the diode are arranged so that portions thereof are disposed beneath the inductance element.
    • 公开了能够实现小型化而不降低电源效率并且能够降低开关噪声的半导体器件和使用其的存储卡。 该装置包括用于潜在地提高最终输出电压的电源电压的多级升压电路,用于控制最后级的附近位置处的输出电压的电压控制单元和一个或多个内部元件 其提供最终输出电压。 第一级的初级升压电路包括电感元件,开关元件,二极管和驱动器电路。 在电感元件的金属芯部分,使用通过使用半导体集成电路的制造工艺形成的金属布线,同时使用其核心部分使用该制造形成的布线层电介质膜 处理。 此外,开关元件和二极管被布置成使得其部分设置在电感元件下方。
    • 30. 发明授权
    • Circuit for protecting a load from an overvoltage
    • 用于保护负载免受过电压的电路
    • US06538866B1
    • 2003-03-25
    • US09526737
    • 2000-03-16
    • Keiji HanzawaMasahiro MatsumotoFumio MurabayashiTatsumi YamauchiHiromichi YamadaKohei SakuraiAtsushi Miyazaki
    • Keiji HanzawaMasahiro MatsumotoFumio MurabayashiTatsumi YamauchiHiromichi YamadaKohei SakuraiAtsushi Miyazaki
    • H02H900
    • H01L27/0251H02H9/04
    • A circuit for protecting a load from an overvoltage can be integrated together with the load on the same chip by an MOS transistor manufacture process. This overvoltage protecting circuit is composed of a surge protection circuit, an overvoltage detecting circuit and a switching circuit. The surge protection circuit including two MOS transistors operates so that a surge voltage applied to a power supply receiving terminal is clamped by virtue of the source-drain breakdown voltage of the two MOS transistors, thereby absorbing the surge energy. The overvoltage detecting circuit including two MOS transistors operates so that a DC voltage supplied from the surge protection circuit is monitored with the source-drain voltage of the two MOS transistors taken as a reference voltage, thereby detecting an overvoltage. An overvoltage detection output brings an MOS transistor of the switching circuit into a turned-off condition to protect the load.
    • 可以通过MOS晶体管制造工艺将用于保护负载的过电压的电路与负载集成在同一芯片上。 该过电压保护电路由浪涌保护电路,过电压检测电路和开关电路构成。 包括两个MOS晶体管的浪涌保护电路工作,借助于两个MOS晶体管的源极 - 漏极击穿电压来钳位施加到电源接收端的浪涌电压,从而吸收浪涌能量。 包括两个MOS晶体管的过电压检测电路进行工作,从而以两个MOS晶体管的源极 - 漏极电压作为参考电压来监视从浪涌保护电路提供的直流电压,从而检测过电压。 过电压检测输出使开关电路的MOS晶体管成为关断状态,以保护负载。