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21. 发明申请

US20080236750A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080236750A1
公开(公告)日：2008-10-02
申请号：US12055839
申请日：2008-03-26
申请人： Chishio KOSHIMIZU
发明人： Chishio KOSHIMIZU
IPC分类号： C23C16/505 , C23F1/02
CPC分类号： H01J37/32165 , B08B7/0042 , H01J37/32091 , H01J37/32183
摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode attached to the processing chamber via an insulator. To generate a plasma of a processing gas in the processing space, a high frequency power supply unit applies to the first electrode a high frequency power having a predetermined high frequency. Further, to control energy of incident ions on the first and the second electrode from the plasma, a first low frequency power supply unit applies to the first electrode a first low frequency power having the frequency lower than the frequency of the high frequency power, and a second low frequency power supply unit applies to the second electrode a second low frequency power having the frequency lower than the frequency of the high frequency power.
摘要翻译：等离子体处理装置包括处理室，第一电极和经由绝缘体附着到处理室的第二电极。为了在处理空间中产生处理气体的等离子体，高频电源单元向第一电极施加具有预定高频的高频电力。此外，为了从等离子体控制入射离子在第一和第二电极上的能量，第一低频电源单元向第一电极施加频率低于高频功率频率的第一低频功率，以及第二低频电源单元向第二电极施加频率低于高频功率频率的第二低频功率。

22. 发明申请

US20120145186A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120145186A1
公开(公告)日：2012-06-14
申请号：US13399749
申请日：2012-02-17
申请人： Chishio KOSHIMIZU
发明人： Chishio KOSHIMIZU
IPC分类号： B08B6/00 , B05C5/02
CPC分类号： H01J37/32165 , B08B7/0042 , H01J37/32091 , H01J37/32183
摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode attached to the processing chamber via an insulator. To generate a plasma of a processing gas in the processing space, a high frequency power supply unit applies to the first electrode a high frequency power having a predetermined high frequency. Further, to control energy of incident ions on the first and the second electrode from the plasma, a first low frequency power supply unit applies to the first electrode a first low frequency power having the frequency lower than the frequency of the high frequency power, and a second low frequency power supply unit applies to the second electrode a second low frequency power having the frequency lower than the frequency of the high frequency power.
摘要翻译：等离子体处理装置包括处理室，第一电极和经由绝缘体附着到处理室的第二电极。为了在处理空间中产生处理气体的等离子体，高频电源单元向第一电极施加具有预定高频的高频电力。此外，为了从等离子体控制入射离子在第一和第二电极上的能量，第一低频电源单元向第一电极施加频率低于高频功率频率的第一低频功率，以及第二低频电源单元向第二电极施加频率低于高频功率频率的第二低频功率。

23. 发明申请

US20090242127A1 PLASMA ETCHING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻装置和方法以及计算机可读存储介质
公开(公告)号：US20090242127A1
公开(公告)日：2009-10-01
申请号：US12411001
申请日：2009-03-25
申请人： Chishio KOSHIMIZU , Manabu IWATA , Masanobu HONDA , Hiroyuki NAKAYAMA
发明人： Chishio KOSHIMIZU , Manabu IWATA , Masanobu HONDA , Hiroyuki NAKAYAMA
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01J37/32697
摘要： A plasma etching apparatus includes a processing vessel; a lower electrode on which a target substrate is mounted in the processing vessel; an upper electrode disposed in the processing vessel to face the lower electrode in parallel; a processing gas supply unit configured to supply a processing gas into a processing space between the upper and the lower electrode; a first radio frequency power supply unit configured to apply, to the lower electrode, a first radio frequency power for generating plasma of the processing gas; a focus ring covering a top surface peripheral portion of the lower electrode protruding toward a radial outside of the substrate; a DC power supply configured to output a variable DC voltage; and a DC voltage supply network that connects the DC power supply to either one of the focus ring and the upper electrode or both depending on processing conditions of plasma etching.
摘要翻译：等离子体蚀刻装置包括处理容器; 将目标基板安装在处理容器中的下电极; 设置在所述处理容器中以与所述下电极平行地面对的上电极; 处理气体供给单元，被配置为将处理气体供应到上部和下部电极之间的处理空间; 第一射频电源单元，被配置为向下部电极施加用于产生处理气体的等离子体的第一射频功率; 覆盖所述下电极的顶表面周边部分的朝向所述基板的径向外侧突出的聚焦环; DC电源，被配置为输出可变DC电压; 以及根据等离子体蚀刻的处理条件将直流电源连接到焦点环和上部电极中的任一个或两者的直流电压供给网络。

24. 发明申请

US20090197423A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20090197423A1
公开(公告)日：2009-08-06
申请号：US12363992
申请日：2009-02-02
申请人： Chishio KOSHIMIZU , Taichi HIRANO , Masanobu HONDA , Shinji HIMORI
发明人： Chishio KOSHIMIZU , Taichi HIRANO , Masanobu HONDA , Shinji HIMORI
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01J37/32009 , H01J37/3255 , H01J37/32724 , H01L21/67248 , H01L21/6831
摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
摘要翻译：能够消除等离子体分布不均匀的基板处理方法。该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

25. 发明申请

US20080029385A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080029385A1
公开(公告)日：2008-02-07
申请号：US11830309
申请日：2007-07-30
申请人： Chishio KOSHIMIZU , Naoki MATSUMOTO
发明人： Chishio KOSHIMIZU , Naoki MATSUMOTO
IPC分类号： B01J19/08
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.
摘要翻译：等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线，将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器具有由射频功率提取装置提取的预定频率的射频功率。

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