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1. 发明授权

US09209570B2 Connector, cable, transmission device, reception device, and manufacturing method of connector 有权
标题翻译：连接器，电缆，传输装置，接收装置和连接器的制造方法
公开(公告)号：US09209570B2
公开(公告)日：2015-12-08
申请号：US13990850
申请日：2011-12-02
申请人： Kazuaki Toba , Hideyuki Suzuki , Taichi Hirano
发明人： Kazuaki Toba , Hideyuki Suzuki , Taichi Hirano
IPC分类号： H04B3/00 , H01R13/648 , H01R24/62 , H01R43/26 , H02G15/02 , H01R13/6471 , H01R107/00
CPC分类号： H01R13/648 , H01R13/6471 , H01R13/6585 , H01R24/62 , H01R43/26 , H01R2107/00 , H01R2201/18 , H02G15/02 , Y10T29/49204
摘要： To provide a connector enabling high quality signal transmission while maintaining compatibility with the current HDMI connector, in a new HDMI interface using pins assigned to a shield, as a data pair. Each of signal electrode pins is arrayed near a shell (grounding conductor) so as to couple with the shell, and differential signals are transmitted with single end. A ground plane is disposed between multiple signal electrode pins of a first stage and the plurality of signal electrode pins of a second stage within a dielectric. Also, connection conductors electrically connecting the ground plane and the grounding conductor are disposed between each of the signal electrode pins of each of the stages within the dielectric. With a pair of signal electrode pins transmitting differential signals, crosstalk from other signal electrode pins can be reduced, and high quality signal transmission is enabled.
摘要翻译：作为数据对，提供一种能够实现高质量信号传输的连接器，同时保持与当前HDMI连接器的兼容性，在使用分配给屏蔽的引脚的新HDMI接口中。每个信号电极引脚排列在外壳（接地导体）附近，以便与外壳耦合，并且差分信号以单端传输。接地平面设置在电介质内的第一级的多个信号电极引脚和第二级的多个信号电极引脚之间。此外，电连接接地面和接地导体的连接导体设置在电介质内的每个级的每个信号电极引脚之间。通过一对信号电极引脚传输差分信号，可以减少来自其他信号电极引脚的串扰，从而实现高质量的信号传输。

2. 发明授权

US08193097B2 Plasma processing apparatus and impedance adjustment method 有权
标题翻译：等离子体处理装置和阻抗调整方法
公开(公告)号：US08193097B2
公开(公告)日：2012-06-05
申请号：US12466095
申请日：2009-05-14
申请人： Taichi Hirano
发明人： Taichi Hirano
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma processing apparatus, for performing a plasma processing on a substrate to be processed by generating a plasma of the processing gas in an evacuable processing chamber, includes an impedance adjusting mechanism. The impedance adjusting mechanism is provided with a resonance circuit formed to allow a radio frequency current to flow into the first electrode; a variable impedance unit installed on a power feed line to the first electrode; a detector for detecting an apparatus state to be used to search a resonance point of the resonance circuit; and a controller for searching a resonance point of the resonance circuit by detecting a signal of the apparatus state of the detector while varying a value of the variable impedance unit in a state where the plasma is formed and then adjusting the value of the variable impedance unit at the resonance point to a reference value.
摘要翻译：一种等离子体处理装置，包括阻抗调节机构，用于通过在可抽出的处理室中产生处理气体的等离子体对待处理的基板进行等离子体处理。阻抗调节机构设置有形成为允许射频电流流入第一电极的谐振电路; 安装在所述第一电极的馈电线上的可变阻抗单元; 检测器，用于检测要用于搜索谐振电路的谐振点的装置状态; 以及控制器，用于通过在形成等离子体的状态改变可变阻抗单元的值的同时检测检测器的装置状态的信号来搜索谐振电路的谐振点，然后调整可变阻抗单元的值在共振点处为参考值。

3. 发明申请

US20110048453A1 CHAMBER CLEANING METHOD 有权
标题翻译：室清洁方法
公开(公告)号：US20110048453A1
公开(公告)日：2011-03-03
申请号：US12873458
申请日：2010-09-01
申请人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
发明人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
IPC分类号： C25F5/00
CPC分类号： C23C16/4405 , H01J37/32862
摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.
摘要翻译：提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

4. 发明授权

US07506610B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07506610B2
公开(公告)日：2009-03-24
申请号：US11137516
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32577 , H01J37/32082 , H01J37/32174 , H01L21/31116
摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.
摘要翻译：一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。上电极被设置为面对放置在处理容器内的目标衬底。电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

5. 发明授权

US08999068B2 Chamber cleaning method 有权
标题翻译：室内清洗方式
公开(公告)号：US08999068B2
公开(公告)日：2015-04-07
申请号：US12873458
申请日：2010-09-01
申请人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
发明人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
IPC分类号： C23C16/44 , H01J37/32
CPC分类号： C23C16/4405 , H01J37/32862
摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.
摘要翻译：提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

6. 发明授权

US08512510B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08512510B2
公开(公告)日：2013-08-20
申请号：US13108612
申请日：2011-05-16
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
摘要翻译：等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。通过该等离子体对衬底进行预定的等离子体处理。等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态。

7. 发明授权

US07494561B2 Plasma processing apparatus and method, and electrode plate for plasma processing apparatus 有权
标题翻译：等离子体处理装置和方法以及等离子体处理装置的电极板
公开(公告)号：US07494561B2
公开(公告)日：2009-02-24
申请号：US11137492
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/32449 , H01J37/32027 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01J37/3255 , H01J37/32587
摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.
摘要翻译：一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。第一上电极被设置成具有环形并且面对放置在处理容器内的目标衬底。第二上电极径向设置在第一上电极内并与其电绝缘。第一馈电器被配置为以第一功率值将第一RF电源的第一RF输出提供给第一上电极。第二馈电器从第一馈电器分支并且被配置为以小于第一功率值的第二功率值将第一RF电源的第一RF输出提供给第二上电极。

8. 发明申请

US20050257743A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20050257743A1
公开(公告)日：2005-11-24
申请号：US11137516
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： H05H1/46 , C23C16/00 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/306 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32577 , H01J37/32082 , H01J37/32174 , H01L21/31116
摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.
摘要翻译：一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。上电极被设置为面对放置在处理容器内的目标衬底。电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

9. 发明申请

US20130243106A1 CONNECTOR, CABLE, TRANSMISSION DEVICE, RECEPTION DEVICE, AND METHOD OF MANUFACTURING CONNECTOR 有权
标题翻译：传输装置的电缆连接器，接收装置以及制造连接器的方法
公开(公告)号：US20130243106A1
公开(公告)日：2013-09-19
申请号：US13990850
申请日：2011-12-02
申请人： Kazuaki Toba , Hideyuki Suzuki , Taichi Hirano
发明人： Kazuaki Toba , Hideyuki Suzuki , Taichi Hirano
IPC分类号： H01R13/648 , H01R43/26 , H02G15/02
CPC分类号： H01R13/648 , H01R13/6471 , H01R13/6585 , H01R24/62 , H01R43/26 , H01R2107/00 , H01R2201/18 , H02G15/02 , Y10T29/49204
摘要： [Object] To provide a connector enabling high quality signal transmission while maintaining compatibility with the current HDMI connector, in a new HDMI interface using pins assigned to a shield, as a data pair.[Solution] Each of signal electrode pins 252, 152 is arrayed near a shell (grounding conductor) 253, 153 so as to couple with the shell, and differential signals are transmitted with single end. A ground plane 254, 154 is disposed between multiple signal electrode pins of a first stage and the plurality of signal electrode pins of a second stage within a dielectric 251, 151. Also, connection conductors 255, 155 electrically connecting the ground plane and the grounding conductor are disposed between each of the signal electrode pins of each of the stages within the dielectric 251, 151. With a pair of signal electrode pins transmitting differential signals, crosstalk from other signal electrode pins can be reduced, and high quality signal transmission is enabled.
摘要翻译： [对象]提供连接器，实现高质量信号传输，同时保持与当前HDMI连接器的兼容性，在使用分配给屏蔽的引脚的新HDMI接口中作为数据对。 [解决方案]每个信号电极引脚252,152被布置在壳体（接地导体）253,153附近，以便与壳体耦合，并且差分信号以单个端部传输。接地平面254,154设置在电介质251,151的第一级的多个信号电极引脚和第二级的多个信号电极引脚之间。而且，连接导体255,155电连接接地平面和接地导体被布置在电介质251,151中的每个级的每个信号电极引脚之间。通过一对信号电极引脚传输差分信号，可以减少来自其它信号电极引脚的串扰，并且能够实现高质量的信号传输。

10. 发明授权

US08178444B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08178444B2
公开(公告)日：2012-05-15
申请号：US12363992
申请日：2009-02-02
申请人： Chishio Koshimizu , Taichi Hirano , Masanobu Honda , Shinji Himori
发明人： Chishio Koshimizu , Taichi Hirano , Masanobu Honda , Shinji Himori
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/67109 , H01J37/32009 , H01J37/3255 , H01J37/32724 , H01L21/67248 , H01L21/6831
摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
摘要翻译：能够消除等离子体分布不均匀的基板处理方法。该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

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