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21. 发明授权

US06673262B1 Gas for removing deposit and removal method using same 失效
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US06673262B1
公开(公告)日：2004-01-06
申请号：US09208022
申请日：1998-12-09
申请人： Isamu Mori , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mori , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： C09K1308
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

22. 发明授权

US06299249B1 Child seat 失效
标题翻译：儿童座椅
公开(公告)号：US06299249B1
公开(公告)日：2001-10-09
申请号：US09286835
申请日：1999-04-06
申请人： Isamu Mori
发明人： Isamu Mori
IPC分类号： A47C108
CPC分类号： B60N2/2875 , B60N2/2821 , B60N2/286
摘要： In a receive base 3 forming a child seat 1, there is disposed a set angle adjusting mechanism 5 which, in accordance with the angle of a vehicle seat 2, extends a primary rotary plate or the primary rotary plate and a secondary rotary plate simultaneously in a rotating manner to thereby interpose the same between the receive base 3 and vehicle seat 2. According to the present structure, the angle of the receive base 3 can be freely set regardless of the angle of the vehicle seat 2. Also, the set angle adjusting mechanism 5 may be interposed between the receive base 3 and the seat main body of the child seat in such a manner that it in able to adjust the angle of the seat main body. An angle display device is disposed in either of the receive base or seat main body, so that the above-mentioned angle can be confirmed while setting the same. This can enhance the convenience and safety of the child seat to a great extent.
摘要翻译：在形成儿童座椅1的接收基座3中设置有设定角度调节机构5，该设定角度调节机构5根据车辆座椅2的角度将主旋转板或主旋转板和副旋转板同时延伸旋转方式将接收基座3与车辆座椅2之间插入。根据本结构，接收基座3的角度可以自由地设定，而与车辆座椅2的角度无关。另外，设定角度调节机构5可以以能够调节座椅主体的角度的方式设置在接收基座3和儿童座椅的座椅主体之间。角度显示装置设置在接收基座或座椅主体中的任一个中，从而可以在设定上述角度的同时确认上述角度。这可以在很大程度上增强儿童座椅的便利性和安全性。

23. 发明申请

US20120100491A1 Semiconductor Production Equipment Including Fluorine Gas Generator 审中-公开
标题翻译：包括氟气发生器的半导体生产设备
公开(公告)号：US20120100491A1
公开(公告)日：2012-04-26
申请号：US13122643
申请日：2010-01-15
申请人： Isamu Mori , Akifumi Yao , Kenji Tanaka , Tatsuo Miyazaki
发明人： Isamu Mori , Akifumi Yao , Kenji Tanaka , Tatsuo Miyazaki
IPC分类号： F23J15/00 , C23C16/00 , H01L21/02 , C25B1/24 , C23C14/34
CPC分类号： H01M8/0656 , B01D53/68 , B01D53/77 , B01D2251/306 , B01D2251/604 , B01D2257/2047 , B01D2258/0216 , C25B1/02 , C25B1/245 , F23G7/065 , Y02E20/12 , Y02P70/56
摘要： A semiconductor production equipment includes a fluorine gas generator, and a detoxification device for combusting a waste gas containing a fluorine-based gas. The fluorine gas generator is configured to electrolyze hydrogen fluoride in an electrolytic bath of a molten salt containing hydrogen fluoride to generate a main product gas whose major component is fluorine gas at an anode side and generate a by-product gas whose major component is hydrogen at a cathode side. The semiconductor production equipment further includes a lead-out line for introducing the by-product gas generated from the fluorine gas generator to the detoxification device. The detoxification device includes a mechanism for using the by-product gas sent to the detoxification device as a combustion agent.
摘要翻译：半导体生产设备包括氟气发生器和用于燃烧含有氟基气体的废气的解毒装置。氟气发生器构成为在含有氟化氢的熔融盐的电解槽中电解氟化氢，以在阳极侧产生主要成分为氟气的主要产物气体，并产生主要成分为氢的副产物气体阴极侧。半导体生产设备还包括用于将从氟气发生器产生的副产物气引入解毒装置的引出线。排毒装置包括将送到解毒装置的副产物用作燃烧剂的机构。

24. 发明申请

US20120031752A1 Fluorine Gas Generating Device 审中-公开
标题翻译：氟气发生装置
公开(公告)号：US20120031752A1
公开(公告)日：2012-02-09
申请号：US13258954
申请日：2010-03-29
申请人： Isamu Mori , Tatsuo Miyazaki , Akifumi Yao , Takuya Kita
发明人： Isamu Mori , Tatsuo Miyazaki , Akifumi Yao , Takuya Kita
IPC分类号： C25B15/00 , C25B9/00 , C25B1/24
CPC分类号： C25B1/245 , C01B7/20 , C25B15/08
摘要： A fluorine gas generating device 100 is provided which facilitates the maintenance operation of recovery and replacement of an adsorbing material that adsorbs hydrogen fluoride and supplies fluorine gas in a stable manner. The device comprises a refining line 20 that includes refining devices that, with the aid of adsorbing material, remove hydrogen fluoride gas that has been evaporated from a molten salt of an electrolytic tank 1 and mixed to fluorine gas generated at a positive pole 103a of the electrolytic tank. The refining line 20 comprises a first refining section 21 that includes at least two refining devices arranged in parallel and a second refining section 22 that includes at least two refining devices arranged in parallel and is positioned downstream of the first refining section 21. Fluorine gas that has passed through either one of the refining devices of the first refining section 21 is selectively led to either one of the refining devices of the second refining section.
摘要翻译：提供了一种氟气发生装置100，其有助于回收和更换吸附氟化氢并以稳定的方式供应氟气的吸附材料的维护操作。该装置包括精炼管线20，其包括精炼装置，该装置借助于吸附材料除去从电解槽1的熔融盐蒸发的氟化氢气体，并混合到在正极103a处产生的氟气体电解槽。精炼生产线20包括第一精炼部分21，其包括平行布置的至少两个精炼装置和第二精炼部分22，该第二精炼部分22包括平行排列并且位于第一精炼部分21的下游的至少两个精炼装置。氟气已经通过了第一精炼部21的精炼装置中的任一个选择性地被引导到第二精炼部的精炼装置中的任一个。

25. 发明申请

US20100239485A1 METHOD OF MANUFACTURING FLUORINATED GAS COMPOUNDS AND APPARATUS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：制造氟化气体化合物的方法及其制造方法
公开(公告)号：US20100239485A1
公开(公告)日：2010-09-23
申请号：US12740386
申请日：2008-12-19
申请人： Hisao Tanaka , Isamu Mori , Kenji Tanaka
发明人： Hisao Tanaka , Isamu Mori , Kenji Tanaka
IPC分类号： C01B21/083 , B01J19/00 , C01B7/24
CPC分类号： C01B7/24 , C01B21/0832 , C01B21/0835
摘要： An apparatus of generating fluorinated gas compounds by means of reacting liquid stock with gaseous material is characterized by providing a circulating system comprised of a reaction chamber where a liquid mixture containing the liquid stock reacts with the gaseous material, a fluid conduit through which the liquid mixture alone flows, an upper fluid channel through which the reacted liquid mixture moves from the top of the reaction chamber to the top of the fluid conduit, and a lower fluid channel through which the liquid mixture moves from the bottom of the fluid conduit to the bottom of the reaction chamber, and sparging into the bottom of the reaction chamber (A) the virgin gaseous material and (B) at least one selected from the fluorinated gas compounds resulted from the reaction in the reaction chamber, including the first fluorinated gas product generated in the first cycle of the reaction and the second or later gas product resulted from further fluorinating the first or later gas product in the succeeding cycle, so as to circulate the liquid mixture.
摘要翻译：通过使液体原料与气态材料反应产生氟化气体化合物的装置的特征在于提供一种循环系统，其包括反应室，其中含有液体原料的液体混合物与气态物质反应，流体导管，液体混合物单独流动，上部流体通道，反应的液体混合物通过该上部流体通道从反应室的顶部移动到流体导管的顶部;以及下部流体通道，液体混合物通过该下部流体通道从流体导管的底部移动到底部的反应室（A）的底部喷射到原始气态物质，（B）选自反应室中的反应产生的氟化气体化合物中的至少一种，包括产生的第一氟化气体产物在反应的第一个循环中，第二个或更迟的气体产物由第一个或更迟的氟化进一步产生气体产品在随后的循环中，以便使液体混合物循环。

26. 发明授权

US06347832B2 Child seat 失效
标题翻译：儿童座椅
公开(公告)号：US06347832B2
公开(公告)日：2002-02-19
申请号：US09836205
申请日：2001-04-18
申请人： Isamu Mori
发明人： Isamu Mori
IPC分类号： A47C111
CPC分类号： B60N2/2875 , B60N2/2821 , B60N2/286
摘要： In a receive base 3 forming a child seat 1, there is disposed a set angle adjusting mechanism 5 which, in accordance with the angle of a vehicle seat 2, extends a primary rotary plate or the primary rotary plate and a secondary rotary plate simultaneously in a rotating manner to thereby interpose the same between the receive base 3 and vehicle seat 2. According to the present structure, the angle of the receive base 3 can be freely set regardless of the angle of the vehicle seat 2. Also, the set angle adjusting mechanism 5 may be interposed between the receive base 3 and the seat main body of the child seat in such a manner that it is able to adjust the angle of the seat main body. An angle display device is disposed in either of the receive base or seat main body, so that the above-mentioned angle can be confirmed while setting the same. This can enhance the convenience and safety of the child seat to a great extent.
摘要翻译：在形成儿童座椅1的接收基座3中设置有设定角度调节机构5，该设定角度调节机构5根据车辆座椅2的角度将主旋转板或主旋转板和副旋转板同时延伸旋转方式将接收基座3与车辆座椅2之间插入。根据本结构，接收基座3的角度可以自由地设定，而与车辆座椅2的角度无关。另外，设定角度调节机构5可以以能够调节座椅主体的角度的方式设置在接收基座3和儿童座椅的座椅主体之间。角度显示装置设置在接收基座或座椅主体中的任一个中，从而可以在设定上述角度的同时确认上述角度。这可以在很大程度上增强儿童座椅的便利性和安全性。

27. 发明申请

US20120231630A1 Etching Gas 审中-公开
标题翻译：蚀刻气体
公开(公告)号：US20120231630A1
公开(公告)日：2012-09-13
申请号：US13513038
申请日：2010-11-19
申请人： Naoto Takada , Isamu Mori
发明人： Naoto Takada , Isamu Mori
IPC分类号： C09K13/00 , C09K13/06 , C07C49/88 , H01L21/306
CPC分类号： C09K13/00 , C07C53/48 , C23F1/12 , H01L21/3065 , H01L21/31116
摘要： Disclosed is an etching gas provided containing CHF2COF. The etching gas may contain, as an additive, at least one kind of gas selected from O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH4, CH3F, CH2F2, CHF3, N2, He, Ar, Ne, Kr and the like, from CH4, C2H2,C2H4,C2H6, C3H4, C3H6, C3H5, HI, HBr, HCl, CO, NO, NH3, H2 and the like, or from CH4, CH3F, CH2F2 and CHF3. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF4 that places a burden on the environment.
摘要翻译：公开了提供含有CHF 2 COF的蚀刻气体。蚀刻气体可以含有选自O 2，O 3，CO，CO 2，F 2，NF 3，Cl 2，Br 2，I 2，X F n中的至少一种气体作为添加剂（在该式中，X表示Cl，I或Br。 n表示从CH 4，C 2 H 2，C 2 H 4，C 2 H 6，C 3 H 4，C 3 H 6，C 3 H 5，H 1，CH 3，CH 3，CH 3，H，CH 3，，HBr，HCl，CO，NO，NH3，H2等，或来自CH4，CH3F，CH2F2和CHF3。该蚀刻气体不仅具有优异的蚀刻性能，例如抗蚀剂的选择比和图案形貌，而且易于获得，并且基本上不产生对环境造成负担的CF4。

28. 发明申请

US20090068083A1 PROCESS FOR SYNTHESIS OF HALOGENATED NITROGEN 审中-公开
标题翻译：合成硝酸的方法
公开(公告)号：US20090068083A1
公开(公告)日：2009-03-12
申请号：US11912374
申请日：2006-06-16
申请人： Isamu Mori , Tatsuo Miyazaki
发明人： Isamu Mori , Tatsuo Miyazaki
IPC分类号： C01B21/083
CPC分类号： C01B21/0832 , C01B21/0835
摘要： A process for synthesizing a halogenated nitrogen represented by a formula of NFxL3-x, where L represents a halogen other than fluorine, and 1≦x≦3 is provided. This process includes the step of (a) reacting an ammonium complex compound that is one selected from the group consisting of NH4F.nHF, (NH4)yMFz.mHF and a mixture of these and that is in liquid form, with an interhalogen compound or a mixture of an interhalogen compound and F2 gas, wherein 1
摘要翻译：提供由下式表示的卤素氮的合成方法，其中L表示氟以外的卤素，并且1 <= x <= 3。该方法包括以下步骤：（a）使选自NH4F.nHF，（NH4）yMFz.mHF中的一种和这些的混合物和液体形式的铵络合物与间卤化合物反应，或卤代化合物和F2气体的混合物，其中1

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