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    • 21. 发明授权
    • Ink container and ink jet recording apparatus
    • 墨水容器和喷墨记录装置
    • US07488058B2
    • 2009-02-10
    • US11475008
    • 2006-06-27
    • Satoru OkamotoYoshihiro ItoSetsuji TatsumiYasuhiko Kachi
    • Satoru OkamotoYoshihiro ItoSetsuji TatsumiYasuhiko Kachi
    • B41J2/17B41J2/175
    • B41J2/17513B41J2002/17516
    • To fill the ink cartridge with the ink, a first air introduction hole of a negative pressure generator chamber is sealed up, and a pressure pump is connected to a second air introduction hole of a storage chamber, to raise pressure inside the storage chamber so as to exhaust air out of an ink bag. While keeping the storage chamber under the high pressure, the second air introduction hole is sealed up, the first air introduction hole is opened, and an ink filling pump is activated to inject the ink through an ink outlet into the negative pressure generator chamber. When a predetermined amount of ink is injected, the second air introduction hole is opened, and the ink filling pump is reactivated to fill up the ink bag as well as the negative pressure generator chamber with the ink.
    • 为了用墨水填充墨盒,密封负压发生器室的第一空气引入孔,并且压力泵连接到储存室的第二空气引入孔,以提高储存室内的压力,以便 从墨袋中排出空气。 在将储存室保持在高压的状态下,第二空气导入孔被密封,第一空气导入孔被打开,并且启动墨水填充泵,以通过墨水出口将墨水喷射到负压发生器室中。 当注入预定量的墨水时,第二空气引入孔打开,并且墨水填充泵被重新激活以用墨水填充墨袋以及负压发生器室。
    • 22. 发明申请
    • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20090004872A1
    • 2009-01-01
    • US12201546
    • 2008-08-29
    • Satoru Okamoto
    • Satoru Okamoto
    • H01L21/3065
    • H01L27/127H01L27/1214H01L29/42384H01L29/4908H01L29/66757H01L29/78621H01L29/78627H01L29/78675H01L2029/7863
    • A semiconductor device is provided which is constituted by semiconductor devices including a thin film transistor with a GOLD structure, the GOLD structure thin film transistor being such that: a semiconductor layer, a gate insulating film, and a gate electrode are formed in lamination from the side closer to a substrate; the gate electrode is constituted of a first-layer gate electrode and a second-layer gate electrode shorter in the size than the first-layer gate electrode; the first-layer gate electrode corresponding to the region exposed from the second-layer gate electrode is formed into a tapered shape so as to be thinner toward the end portion; a first impurity region is formed in the semiconductor layer corresponding to the region with the tapered shape; and a second impurity region having the same conductivity as the first impurity region is formed in the semiconductor layer corresponding to the outside of the first-layer gate electrode, which is characterized in that a dry etching process consisting of one step or two steps is applied to the formation of the gate electrode.
    • 提供一种半导体器件,其由包括具有GOLD结构的薄膜晶体管的半导体器件构成,所述GOLD结构薄膜晶体管使得:半导体层,栅极绝缘膜和栅极电极从 更靠近基底; 栅电极由比第一层栅极电极短的第一层栅电极和第二层栅极电极构成; 对应于从第二层栅电极露出的区域的第一层栅电极形成为朝向端部较薄的锥形形状; 在对应于具有锥形形状的区域的半导体层中形成第一杂质区; 并且在与第一层栅电极的外侧对应的半导体层中形成具有与第一杂质区相同的导电性的第二杂质区,其特征在于,施加由一步或两步构成的干蚀刻工艺 以形成栅电极。
    • 25. 发明申请
    • CPP-type magnetoresistive effect head and method of manufacturing the same
    • CPP型磁阻效应头及其制造方法
    • US20080239585A1
    • 2008-10-02
    • US12006723
    • 2008-01-04
    • Masahiro OusugiKouji OkazakiSatoru OkamotoKatsuro Watababe
    • Masahiro OusugiKouji OkazakiSatoru OkamotoKatsuro Watababe
    • G11B5/33
    • G11B5/398B82Y25/00G01R33/093G11B5/3163G11B5/3932H01L43/08H01L43/10
    • Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer. A magnetic shield underlayer film is formed on the top surfaces of the free layer, the magnetic domain control layer and the refill insulation film and an upper magnetic shield layer is formed on the magnetic shield underlayer film.
    • 本发明的实施例有助于防止垂直于平面型(CPP型)磁阻效应头的电流的偏置磁场的减小,从而抑制读取输出的减小。 根据一个实施例,在下磁屏蔽的顶部上形成CPP型磁阻效应膜。 在中间层的两侧和CPP型磁阻效应膜的自由层上形成补充绝缘膜和磁畴控制层。 侧壁保护膜形成在补充绝缘膜的侧壁上并且在自由层的顶部上,以便限定磁畴控制层的高度。 为了增加磁畴控制层的膜厚度,磁畴控制层和再填充绝缘膜高于自由层的顶表面。 在自由层,磁畴控制层和再填充绝缘膜的上表面上形成有磁屏蔽下层膜,在磁屏蔽下层膜上形成上磁屏蔽层。
    • 27. 发明申请
    • Porous glass moldings and method for production thereof
    • 多孔玻璃模制品及其生产方法
    • US20060040820A1
    • 2006-02-23
    • US10506732
    • 2003-03-04
    • Satoru Okamoto
    • Satoru Okamoto
    • C03C6/00C03C6/08
    • C03C11/00C03B19/06C03C1/002
    • An object is to provide porous glass moldings at reduced costs while attempting to efficiently utilize waste glass, which moldings are excellent in water permeability and water holding capability, as well as producing a decorative effect hardly seen conventionally. Glass cullets are produced by crushing waste glass such as colored bottles. Inorganic powder is bonded to the surfaces of the glass cullets that are in turn placed in a mold having a certain shape and fired at 700-800° C., thereby transforming glass into ceramic glass. This allows glass particles to be firmly united into a single piece via the ceramic glass while having pores therebetween.
    • 本发明的目的是在试图有效地利用废水玻璃的同时以降低的成本提供多孔玻璃模制品,该模制品具有优异的透水性和保水能力,以及产生几乎看不到的装饰效果。 玻璃碎玻璃是通过粉碎诸如彩色瓶子的废玻璃来生产的。 将无机粉末粘结在玻璃碎片的表面上,然后将其放置在具有一定形状的模具中并在700-800℃下烧制,从而将玻璃转化成陶瓷玻璃。 这允许玻璃颗粒通过陶瓷玻璃牢固地结合成单件,同时在其间具有孔隙。
    • 30. 发明授权
    • Process for the production of heat- and corrosion-resistant porous metal
body
    • 用于生产耐热和耐腐蚀的多孔金属体的方法
    • US5672387A
    • 1997-09-30
    • US491416
    • 1995-06-16
    • Toshiyasu TsubouchiSatoru OkamotoTomohiko Ihara
    • Toshiyasu TsubouchiSatoru OkamotoTomohiko Ihara
    • B01D39/20C23C10/10C23C10/12C23C10/14C23C10/32B01D53/00
    • B01D39/2034C23C10/10C23C10/12C23C10/14C23C10/32
    • A process for the production of a heat- and corrosion-resistant porous metal body which is made of a metal or whose surface layer is made of a metal, in which the porous metal body can be alloyed with chromium or a combination of chromium and aluminum uniformly throughout the entire thereof by adjusting the alloy composition in the following manner, i.e., (A) heat-treating the porous metal body in a mixed gas comprising a gas, generated by heating a powdered mixture comprising chromium or its compound and NH.sub.4 Cl at 950.degree. to 1100.degree. C., and a diluent reducing gas at 800.degree. to 1100.degree. C., or (B) heat-treating the porous metal body in a mixed gas comprising a gas, generated by heating a powdered mixture comprising aluminum or its compound, chromium or its compound and NH.sub.4 X, wherein X is I, F, Cl or Br, at a weight ratio of the chromium or its compound to the aluminum or its compound of 10 to 80 in terms of Cr and Al respectively at 950.degree. to 1100.degree. C., and a diluent reducing gas at 800.degree. to 1100.degree. C.
    • 一种生产由金属或其表面层由金属制成的耐热和耐腐蚀多孔金属体的方法,其中多孔金属体可以与铬或铬和铝的组合合金化 通过以下方式调整合金组成即(A)在包含气体的混合气体中热处理多孔金属体,即通过在950℃下加热包含铬或其化合物的粉末混合物和NH 4 Cl而产生的气体 在1100℃下加入稀释剂还原气体,或(B)将包含气体的混合气体中的多孔金属体进行热处理,所述混合气体包括通过加热包含铝或它的 化合物,铬或其化合物和NH 4 X,其中X为I,F,Cl或Br,铬或其化合物与铝或其化合物的重量比分别为Cr和Al为10至80,分别为950° 至1100℃,和稀释剂还原气体 800〜1100℃