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21. 发明授权

US08373281B2 Semiconductor module and portable apparatus provided with semiconductor module 有权
标题翻译：具有半导体模块的半导体模块和便携式设备
公开(公告)号：US08373281B2
公开(公告)日：2013-02-12
申请号：US13056851
申请日：2009-07-29
申请人： Hajime Kobayashi , Mayumi Nakasato , Ryosuke Usui , Yasuyuki Yanase , Koichi Saito
发明人： Hajime Kobayashi , Mayumi Nakasato , Ryosuke Usui , Yasuyuki Yanase , Koichi Saito
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L23/3107 , H01L21/4832 , H01L21/486 , H01L21/561 , H01L21/563 , H01L23/3128 , H01L23/49541 , H01L23/49827 , H01L23/552 , H01L24/16 , H01L24/19 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/81 , H01L24/97 , H01L2224/02319 , H01L2224/0401 , H01L2224/12105 , H01L2224/16225 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73203 , H01L2224/73204 , H01L2224/81201 , H01L2224/81801 , H01L2224/81894 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2224/81 , H01L2224/85 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor element mounted on an insulating resin layer formed on a wiring layer is sealed by a sealing resin. On the wiring layer, a protruding electrode protruding to the side of the semiconductor element and a protruding section are integrally formed with the wiring layer, respectively. The protruding electrode is electrically connected to an element electrode of the semiconductor element by penetrating the insulating resin layer. The protruding section is arranged to surround the semiconductor element along the four sides of the semiconductor element, and is embedded in the sealing resin up to a position above a section where the protruding electrode and the element electrode are bonded.
摘要翻译：安装在形成在布线层上的绝缘树脂层上的半导体元件被密封树脂密封。在布线层上，分别与布线层一体地形成突出于半导体元件侧的突出电极和突出部。突出电极通过穿透绝缘树脂层与半导体元件的元件电极电连接。突出部被布置成围绕半导体元件的四个边缘包围半导体元件，并且嵌入到密封树脂中直到突出电极和元件电极接合的部分上方。

22. 发明申请

US20110186993A1 SEMICONDUCTOR MODULE AND PORTABLE APPARATUS PROVIDED WITH SEMICONDUCTOR MODULE 有权
标题翻译：具有半导体模块的半导体模块和便携式设备
公开(公告)号：US20110186993A1
公开(公告)日：2011-08-04
申请号：US13056851
申请日：2009-07-29
申请人： Hajime Kobayashi , Mayumi Nakasato , Ryosuke Usui , Yasuyuki Yanase , Koichi Saito
发明人： Hajime Kobayashi , Mayumi Nakasato , Ryosuke Usui , Yasuyuki Yanase , Koichi Saito
IPC分类号： H01L23/485
CPC分类号： H01L23/3107 , H01L21/4832 , H01L21/486 , H01L21/561 , H01L21/563 , H01L23/3128 , H01L23/49541 , H01L23/49827 , H01L23/552 , H01L24/16 , H01L24/19 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/81 , H01L24/97 , H01L2224/02319 , H01L2224/0401 , H01L2224/12105 , H01L2224/16225 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73203 , H01L2224/73204 , H01L2224/81201 , H01L2224/81801 , H01L2224/81894 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2224/81 , H01L2224/85 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor element mounted on an insulating resin layer formed on a wiring layer is sealed by a sealing resin. On the wiring layer, a protruding electrode protruding to the side of the semiconductor element and a protruding section are integrally formed with the wiring layer, respectively. The protruding electrode is electrically connected to an element electrode of the semiconductor element by penetrating the insulating resin layer. The protruding section is arranged to surround the semiconductor element along the four sides of the semiconductor element, and is embedded in the sealing resin up to a position above a section where the protruding electrode and the element electrode are bonded.
摘要翻译：安装在形成在布线层上的绝缘树脂层上的半导体元件被密封树脂密封。在布线层上，分别与布线层一体地形成突出于半导体元件侧的突出电极和突出部。突出电极通过穿透绝缘树脂层与半导体元件的元件电极电连接。突出部被布置成围绕半导体元件的四个边缘包围半导体元件，并且嵌入到密封树脂中直到突出电极和元件电极接合的部分上方。

23. 发明申请

US20090115056A1 DEVICE MOUNTING BOARD, SEMICONDUCTOR MODULE, AND MOBILE DEVICE 有权
标题翻译：器件安装板，半导体模块和移动设备
公开(公告)号：US20090115056A1
公开(公告)日：2009-05-07
申请号：US12263174
申请日：2008-10-31
申请人： Kouichi Saitou , Mayumi Nakasato , Ryosuke Usui
发明人： Kouichi Saitou , Mayumi Nakasato , Ryosuke Usui
IPC分类号： H01L23/492
CPC分类号： H01L23/49811 , H01L23/145 , H01L23/3733 , H01L23/49822 , H01L23/49827 , H01L23/49894 , H01L24/16 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/81192 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H05K1/0366 , H05K1/112 , H05K3/0041 , H05K3/3436 , H05K3/3457 , H05K2201/09509 , H05K2201/09527 , H05K2203/1152 , H01L2224/05599
摘要： A device mounting board includes an insulating layer formed of an insulating resin, a glass cloth covering the surface of the insulating layer, and an electrode provided in a through hole extending through the glass cloth. The angle of contact with solder of the glass cloth is larger than that of the resin. Thus, solder bumps are formed on the electrode of the device mounting board 10 with high precision.
摘要翻译：装置安装板包括由绝缘树脂形成的绝缘层，覆盖绝缘层表面的玻璃布和设置在穿过玻璃布的通孔中的电极。玻璃布与焊料的接触角大于树脂的接触角。因此，高精度地在器件安装板10的电极上形成焊料凸块。

24. 发明申请

US20110241203A1 SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE, AND PORTABLE APPARATUS 审中-公开
标题翻译：半导体模块，制造半导体模块的方法和便携式设备
公开(公告)号：US20110241203A1
公开(公告)日：2011-10-06
申请号：US13139075
申请日：2009-12-10
申请人： Mayumi Nakasato , Katsumi Ito , Ryosuke Usui , Yusuke Igarashi
发明人： Mayumi Nakasato , Katsumi Ito , Ryosuke Usui , Yusuke Igarashi
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L23/49838 , H01L21/563 , H01L23/3114 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L24/02 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02319 , H01L2224/02333 , H01L2224/02379 , H01L2224/02381 , H01L2224/0239 , H01L2224/0401 , H01L2224/05548 , H01L2224/05557 , H01L2224/05568 , H01L2224/05624 , H01L2224/05647 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/13147 , H01L2224/16225 , H01L2224/16238 , H01L2224/26175 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81385 , H01L2224/81815 , H01L2224/92125 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/351 , H05K1/111 , H05K1/185 , H05K3/3436 , H05K2201/09427 , H05K2201/10674 , H05K2201/10977 , Y02P70/613 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor module includes a device mounting board and a semiconductor device. The semiconductor device and the device mounting board are flip-chip connected to each other, and a device electrode provided in the semiconductor device and a substrate electrode provided in the device mounting board are connected by soldering. In a cross section along a line connecting the adjacent substrate electrodes, the width L1 of the substrate electrode is narrower than the width L2 of the device electrode corresponding to the substrate electrode.
摘要翻译：半导体模块包括器件安装板和半导体器件。半导体器件和器件安装板彼此倒装连接，并且设置在半导体器件中的器件电极和设置在器件安装板中的衬底电极通过焊接连接。在沿着连接相邻的基板电极的线的横截面中，基板电极的宽度L1比对应于基板电极的器件电极的宽度L2窄。

25. 发明授权

US08258620B2 Circuit device, method of manufacturing the circuit device, device mounting board and semiconductor module 有权
标题翻译：电路装置，制造电路装置的方法，装置安装板和半导体模块
公开(公告)号：US08258620B2
公开(公告)日：2012-09-04
申请号：US12673409
申请日：2008-08-08
申请人： Mayumi Nakasato , Ryosuke Usui , Kiyoshi Shibata
发明人： Mayumi Nakasato , Ryosuke Usui , Kiyoshi Shibata
IPC分类号： H01L23/053 , H01L23/12
CPC分类号： H01L23/145 , H01L21/4857 , H01L21/486 , H01L21/563 , H01L21/6835 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L24/16 , H01L24/81 , H01L24/83 , H01L24/90 , H01L29/0657 , H01L2221/68345 , H01L2224/05001 , H01L2224/05008 , H01L2224/05026 , H01L2224/0508 , H01L2224/05144 , H01L2224/05147 , H01L2224/05569 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13021 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16235 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81136 , H01L2224/81192 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/83104 , H01L2224/83192 , H01L2224/838 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H05K1/0366 , H05K1/0373 , H05K1/113 , H05K3/002 , H05K3/305 , H05K3/4007 , H05K2201/0209 , H05K2201/0367 , H05K2201/0394 , H05K2201/09509 , H05K2201/09527 , H05K2201/09563 , H05K2201/10674 , H05K2201/10977 , H05K2203/1152 , Y02P70/613 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/05599
摘要： A circuit device includes an insulating base provided with a resin layer mixed with a fibrous filler, bumps provided in the insulating base and functioning as electrodes for connection, a semiconductor device that is flip-chip mounted, and an underfill filling a gap between the semiconductor device and the insulating base. By allowing the fibrous filler projecting through the top surface of the resin layer to be in contact with the underfill, strength of adhesion between the underfill and the insulating base is improved.
摘要翻译：电路装置包括：绝缘基体，设置有与纤维填料混合的树脂层，设置在绝缘基底中的凸起，用作连接用电极，倒装芯片安装的半导体器件，以及填充半导体之间的间隙的底部填充物设备和绝缘基座。通过使通过树脂层的上表面突出的纤维状填料与底部填充剂接触，提高了底部填充剂和绝缘基材之间的粘合强度。

26. 发明授权

US08097946B2 Device mounting board, semiconductor module, and mobile device 有权
标题翻译：设备安装板，半导体模块和移动设备
公开(公告)号：US08097946B2
公开(公告)日：2012-01-17
申请号：US12263174
申请日：2008-10-31
申请人： Kouichi Saitou , Mayumi Nakasato , Ryosuke Usui
发明人： Kouichi Saitou , Mayumi Nakasato , Ryosuke Usui
IPC分类号： H01L23/053 , H01L23/12
CPC分类号： H01L23/49811 , H01L23/145 , H01L23/3733 , H01L23/49822 , H01L23/49827 , H01L23/49894 , H01L24/16 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/81192 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H05K1/0366 , H05K1/112 , H05K3/0041 , H05K3/3436 , H05K3/3457 , H05K2201/09509 , H05K2201/09527 , H05K2203/1152 , H01L2224/05599
摘要： A device mounting board includes an insulating layer formed of an insulating resin, a glass cloth covering the surface of the insulating layer, and an electrode provided in a through hole extending through the glass cloth. The angle of contact with solder of the glass cloth is larger than that of the resin. Thus, solder bumps are formed on the electrode 14 of the device mounting board 10 with high precision.
摘要翻译：装置安装板包括由绝缘树脂形成的绝缘层，覆盖绝缘层表面的玻璃布和设置在穿过玻璃布的通孔中的电极。玻璃布与焊料的接触角大于树脂的接触角。因此，在装置安装基板10的电极14上高精度地形成焊锡凸块。

27. 发明授权

US07915737B2 Packing board for electronic device, packing board manufacturing method, semiconductor module, semiconductor module manufacturing method, and mobile device 有权
标题翻译：电子装置包装板，包装板制造方法，半导体模块，半导体模块制造方法和移动装置
公开(公告)号：US07915737B2
公开(公告)日：2011-03-29
申请号：US11957030
申请日：2007-12-14
申请人： Mayumi Nakasato , Yoshio Okayama , Ryosuke Usui
发明人： Mayumi Nakasato , Yoshio Okayama , Ryosuke Usui
IPC分类号： H01L23/48
CPC分类号： H01L23/3114 , H01L23/525 , H01L24/11 , H01L24/12 , H01L2224/0231 , H01L2224/02313 , H01L2224/02319 , H01L2224/02333 , H01L2224/0401 , H01L2224/13022 , H01L2224/13099 , H01L2224/13147 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/351 , H01L2924/00
摘要： A manufacturing technology is provided capable of improving the reliability of a semiconductor module having a via contact connected to an electrode part of a semiconductor component. The semiconductor module includes: a semiconductor component provided with an electrode part on a mounting surface; an insulating layer provided on the mounting surface of the semiconductor component; a wiring layer formed on the insulating layer; a first conductor part which is embedded in the insulating layer and which is in contact with the electrode part; and a second conductor part which is formed in an aperture provided in the insulating layer above the first conductor part and which electrically connects the first conductor part and the wiring layer.
摘要翻译：提供一种制造技术，其能够提高具有连接到半导体部件的电极部分的通孔接触的半导体模块的可靠性。半导体模块包括：在安装表面上设置有电极部分的半导体部件; 设置在所述半导体部件的安装面上的绝缘层; 形成在所述绝缘层上的布线层; 第一导体部，其嵌入绝缘层中并与电极部接触; 以及第二导体部，其形成在设置在所述第一导体部分上方的所述绝缘层中的孔中，并且将所述第一导体部和所述布线层电连接。

28. 发明申请

US20130337310A1 CELL MODULE AND MANUFACTURING METHOD FOR CELL MODULE 有权
标题翻译：细胞模块和细胞模块的制造方法
公开(公告)号：US20130337310A1
公开(公告)日：2013-12-19
申请号：US14001790
申请日：2012-02-16
申请人： Tetsuji Omura , Mayumi Nakasato , Fusanori Watanabe
发明人： Tetsuji Omura , Mayumi Nakasato , Fusanori Watanabe
IPC分类号： H01M10/50 , H01M2/10
CPC分类号： H01M10/6551 , H01M2/1016 , H01M2/1077 , H01M2/1083 , H01M2/14 , H01M10/0413 , H01M10/613 , H01M10/625 , H01M10/647 , H01M10/653 , H01M10/6554 , H01M2220/20 , Y10T29/4935
摘要： A cell module 10 comprises: a cell stack 20 comprising multiple cells 30 which are electrically connected to each other; a plate-shaped heat dissipating member 70 arranged such that it extends along a direction in which the multiple cells 30 are arranged, and such that it is thermally connected to the multiple cells 30; and an intervening layer 80 arranged between the cell stack 20 and the heat dissipating member 70, and configured to allow heat to propagate from the cell stack 20 to the heat dissipating member 70, and to suppress a relative displacement between the cell stack 20 and the heat dissipating member 70.
摘要翻译：电池模块10包括：电池组20，其包括彼此电连接的多个电池30; 布置成使得其沿着多个单元30布置的方向延伸的板状散热构件70，并且使其与多个单元30热连接; 以及布置在电池组20和散热构件70之间的中间层80，并且被配置为允许热量从电池堆20传播到散热构件70，并且抑制电池堆20和电池组20之间的相对位移散热构件70。

29. 发明申请

US20080105861A1 Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array 有权
标题翻译：多值记录相变存储器件，多值记录相变沟道晶体管和存储单元阵列
公开(公告)号：US20080105861A1
公开(公告)日：2008-05-08
申请号：US11905748
申请日：2007-10-03
申请人： Sumio Hosaka , Hayato Sone , Masaki Yoshimaru , Takashi Ono , Mayumi Nakasato
发明人： Sumio Hosaka , Hayato Sone , Masaki Yoshimaru , Takashi Ono , Mayumi Nakasato
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/148
摘要： A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.
摘要翻译：可以稳定地记录多值信息并且可以高可靠性再现信息的多值记录相变存储器件包括：第一电极层26，第二电极层28和存储层30，和第二电极层26和28，并且包含由在室温下在非晶相或结晶相中稳定的相变材料形成的相变材料层，其中存储层30包括多个相互隔离的子内存层32,34,36和38在第一和第二电极层26和28之间。

30. 发明授权

US06887767B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06887767B2
公开(公告)日：2005-05-03
申请号：US10392878
申请日：2003-03-21
申请人： Mayumi Nakasato , Kazuhiro Sasada , Masahiro Oda
发明人： Mayumi Nakasato , Kazuhiro Sasada , Masahiro Oda
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L21/76235
摘要： A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0≦x≦(d/2 sin θ), where x represents the distance, and θ represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成缓冲膜，形成元件分隔沟槽，在元件分隔沟槽的表面上形成氧化膜，并用氢氟酸洗涤半导体衬底。洗涤物去除部分缓冲膜，缓冲膜的端部从元件分隔槽的顶部边缘向内移除预定距离。氧化膜的距离和厚度由表达式0 <= x <=（d /2sinθ）表示，其中x表示距离，θ表示平行于半导体衬底的平面与侧面之间的角度元件分隔沟的表面。

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