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    • 21. 发明授权
    • Ultrasonic transducer, ultrasonic probe and method for fabricating the same
    • 超声波换能器,超声波探头及其制造方法
    • US07667374B2
    • 2010-02-23
    • US11657186
    • 2007-01-23
    • Takanori AonoTatsuya NagataHiroyuki EnomotoShuntaro Machida
    • Takanori AonoTatsuya NagataHiroyuki EnomotoShuntaro Machida
    • H01L41/00
    • B06B1/0292
    • In an ultrasonic transducer including a gap between an upper electrode and a lower electrode on a silicon substrate, it is made possible to reduce or adjust warpage of an above-gap membrane vibrated by electrostatic actuation due to internal stress. A fourth insulating film and a fifth insulating film of films positioned above the gap which is a cavity required for transmitting and receiving ultrasonic are respectively a silicon oxide film for compression stress and a silicon nitride film for tensile stress. Therefore, compression stress and tensile stress cancel each other, so that warpage of the above-gap membrane is reduced. An amount of warpage can be adjusted by adjusting a film thickness of the fourth insulating film and a film thickness of the fifth insulating film.
    • 在包括硅基板上的上电极和下电极之间的间隙的超声波换能器中,由于内部应力,能够减少或调整由静电驱动振动的上间隙膜的翘曲。 位于间隙上方的膜的第四绝缘膜和第五绝缘膜分别是用于发送和接收超声波所需的腔,分别是用于压缩应力的氧化硅膜和用于拉伸应力的氮化硅膜。 因此,压缩应力和拉伸应力彼此抵消,从而减小了上间隙膜的翘曲。 可以通过调整第四绝缘膜的膜厚度和第五绝缘膜的膜厚来调节翘曲量。
    • 22. 发明申请
    • Electro-acoustic transducer device
    • 电声换能器装置
    • US20070057603A1
    • 2007-03-15
    • US11491198
    • 2006-07-24
    • Takashi AzumaShin-ichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • Takashi AzumaShin-ichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • H01L41/09
    • B06B1/0292H04R19/005
    • In a semiconductor diaphragm type electro-acoustic transducer device having no necessity for a DC bias voltage applied as a result of a charge-stored layer being provide between electrodes, electro-mechanical conversion efficiency undergoes a change owing to time-dependent change in a quantity of stored electricity due to leakage of charge, and so forth. As for sensitivity of signal reception, provided by an ultrasonic array-transducer made up of the electro-acoustic transducer devices each as a basic unit, not only a main beam sensitivity undergoes drift as a result of drift in the electromechanical conversion efficiency, but also there result deterioration in an acoustic S/N ratio, and deterioration in directionality of an ultrasonic beam. In order to resolve those problems, there is provided an electro-acoustic transducer device comprising a first electrode formed on top of, or inside a substrate, a thin film using silicon or a silicon compound as a base material thereof, provided on top of the substrate, a second electrode formed on top of, or inside the thin film, a void layer provided between the first electrode and the second electrode, a charge-stored layer for storing charge given by the first electrode and the second electrode, provided between the first electrode and the second electrode, and a source electrode and a drain electrode, for measuring a quantity of electricity stored in the charge-storage layer.
    • 在半导体膜式电声换能器装置中,由于在电极之间提供电荷存储层,所以不需要施加直流偏置电压,电 - 机转换效率由于时间上的变化而发生变化 由于电荷泄漏而导致的储存电力等。 对于由作为基本单元的电声换能器构成的超声波阵列换能器提供的信号接收的灵敏度,由于机电转换效率的漂移,主光束的灵敏度不但会发生漂移, 导致声S / N比的恶化,超声波束的方向性劣化。 为了解决这些问题,提供了一种电声换能器装置,其包括在基板之上或之内形成的第一电极,使用硅或硅化合物作为其基材的薄膜,其设置在 基板,形成在薄膜的上面或内部的第二电极,设置在第一电极和第二电极之间的空隙层,用于存储由第一电极和第二电极给出的电荷的电荷存储层, 第一电极和第二电极以及源电极和漏电极,用于测量存储在电荷存储层中的电量。
    • 25. 发明授权
    • Communication monitoring in ATM switch
    • ATM交换机中的通信监控
    • US06181680B2
    • 2001-01-30
    • US08753374
    • 1996-11-25
    • Tatsuya NagataKazuhiro Ozawa
    • Tatsuya NagataKazuhiro Ozawa
    • H04L1226
    • H04L49/3081H04L2012/5625H04L2012/5627H04Q11/0478
    • In an ATM switch, after a communication path is properly set up, a continuity test is performed by passing an OAM cell through the communication path before initiating the transmission of user cells. After the transmission of user cells is initiated, a loopback test is performed by periodically inserting an OAM cell in a user cell flow. When a fault condition is detected as a result of the OAM cell loopback test, a peak cell rate environment is created by adding OAM cells to the user cells for a limited period of time, and communication quality is measured under the thus created environment. When a point-to-multipoint connection with a plurality of leaf points is set up, correspondence between each leaf point and a physical connection point is recorded in a table. When a loopback test to a specific leaf point is requested from a maintenance console, an ATM line control unit corresponding to the specific leaf point is determined by referring to the table, and transmission of the OAM cell is allowed only through that ATM line control unit. In this way, an OAM cell loopback test to a specific leaf point can be accomplished.
    • 在ATM交换机中,在正确建立通信路径之后,通过在启动用户小区的传输之前通过通信路径来执行连续性测试。 在发起用户小区的发送之后,通过在用户小区流中周期性地插入OAM小区来执行环回测试。 当作为OAM小区环回测试的结果检测到故障状况时,通过在有限的时间段内向用户小区添加OAM小区来创建峰值小区速率环境,并且在如此创建的环境下测量通信质量。 当建立与多个叶点的点对多点连接时,每个叶点与物理连接点之间的对应关系被记录在表中。 当从维护控制台请求对特定叶点的环回测试时,通过参考该表来确定对应于特定叶点的ATM线路控制单元,并且允许OAM小区的传输仅通过该ATM线路控制单元 。 以这种方式,可以实现对特定叶点的OAM小区环回测试。
    • 29. 发明申请
    • ULTRASOUND PROBE
    • 超声探头
    • US20090069688A1
    • 2009-03-12
    • US12161962
    • 2006-11-14
    • Takanori AonoTatsuya NagataKatsunori AsafusaTakashi KobayashiNaoya Kanda
    • Takanori AonoTatsuya NagataKatsunori AsafusaTakashi KobayashiNaoya Kanda
    • A61B8/14
    • G10K11/002A61B8/00
    • There is provided an ultrasound probe including a first substrate having a silicon substrate and an ultrasound transmit-receive element, an acoustic lens disposed over an upper surface of the first substrate, and a damping layer disposed under the first substrate, in which a second substrate is disposed between a lower surface of the first substrate and an upper surface of the damping layer, and the second substrate is made of a material having approximately the same linear expansion coefficient and acoustic impedance as the silicon substrate of the first substrate. With this structure, it is possible to provide the ultrasound probe which can prevent damage to the silicon substrate due to temperature change and has excellent transmission/reception performance and structure reliability while reducing noise by reflected waves in transmission and reception.
    • 提供一种超声波探头,其包括具有硅衬底和超声波发射接收元件的第一衬底,设置在第一衬底的上表面上的声透镜,以及设置在第一衬底下方的阻尼层,其中第二衬底 设置在第一基板的下表面和阻尼层的上表面之间,第二基板由具有与第一基板的硅基板大致相同的线膨胀系数和声阻抗的材料制成。 利用这种结构,可以提供能够防止由于温度变化而损坏硅基板的超声波探头,并且在发送和接收中减少反射波的噪声的同时具有优异的发送/接收性能和结构可靠性。