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    • 1. 发明授权
    • Ultrasonic transducer, ultrasonic probe and method for fabricating the same
    • 超声波换能器,超声波探头及其制造方法
    • US07667374B2
    • 2010-02-23
    • US11657186
    • 2007-01-23
    • Takanori AonoTatsuya NagataHiroyuki EnomotoShuntaro Machida
    • Takanori AonoTatsuya NagataHiroyuki EnomotoShuntaro Machida
    • H01L41/00
    • B06B1/0292
    • In an ultrasonic transducer including a gap between an upper electrode and a lower electrode on a silicon substrate, it is made possible to reduce or adjust warpage of an above-gap membrane vibrated by electrostatic actuation due to internal stress. A fourth insulating film and a fifth insulating film of films positioned above the gap which is a cavity required for transmitting and receiving ultrasonic are respectively a silicon oxide film for compression stress and a silicon nitride film for tensile stress. Therefore, compression stress and tensile stress cancel each other, so that warpage of the above-gap membrane is reduced. An amount of warpage can be adjusted by adjusting a film thickness of the fourth insulating film and a film thickness of the fifth insulating film.
    • 在包括硅基板上的上电极和下电极之间的间隙的超声波换能器中,由于内部应力,能够减少或调整由静电驱动振动的上间隙膜的翘曲。 位于间隙上方的膜的第四绝缘膜和第五绝缘膜分别是用于发送和接收超声波所需的腔,分别是用于压缩应力的氧化硅膜和用于拉伸应力的氮化硅膜。 因此,压缩应力和拉伸应力彼此抵消,从而减小了上间隙膜的翘曲。 可以通过调整第四绝缘膜的膜厚度和第五绝缘膜的膜厚来调节翘曲量。
    • 3. 发明申请
    • Ultrasonic transducer and manufacturing method thereof
    • 超声波换能器及其制造方法
    • US20070052093A1
    • 2007-03-08
    • US11489612
    • 2006-07-20
    • Shuntaro MachidaHiroyuki EnomotoYoshitaka TadakiTatsuya Nagata
    • Shuntaro MachidaHiroyuki EnomotoYoshitaka TadakiTatsuya Nagata
    • H01L23/48
    • B06B1/0292
    • Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
    • 公开了一种超声换能器的改进结构,其中即使膜的底部与下电极接触,电荷也不容易注入到绝缘膜中,并且其制造方法不使用晶片层压技术。 超声波换能器包括下电极; 形成在所述第一电极上的空腔层; 覆盖空腔层的绝缘膜; 以及形成在绝缘膜上的上电极,其中,所述空腔层包括形成为从所述空腔层突出的绝缘膜的突起。 此外,在上部电极中形成开口,并且其上形成有开口的该上部电极沉积在从顶部观察时不与绝缘膜的突起重叠的位置。
    • 5. 发明授权
    • Ultrasonic transducer and manufacturing method thereof
    • 超声波换能器及其制造方法
    • US07675221B2
    • 2010-03-09
    • US11489612
    • 2006-07-20
    • Shuntaro MachidaHiroyuki EnomotoYoshitaka TadakiTatsuya Nagata
    • Shuntaro MachidaHiroyuki EnomotoYoshitaka TadakiTatsuya Nagata
    • H01L41/08
    • B06B1/0292
    • Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
    • 公开了一种超声换能器的改进结构,其中即使膜的底部与下电极接触,电荷也不容易注入到绝缘膜中,并且其制造方法不使用晶片层压技术。 超声波换能器包括下电极; 形成在所述第一电极上的空腔层; 覆盖空腔层的绝缘膜; 以及形成在所述绝缘膜上的上电极,其中,所述空腔层包括形成为从所述空腔层突出的绝缘膜的突起。 此外,在上部电极中形成开口,并且其上形成有开口的该上部电极沉积在从顶部观察时不与绝缘膜的突起重叠的位置。
    • 7. 发明授权
    • Ultrasonographic device
    • 超声波装置
    • US08132462B2
    • 2012-03-13
    • US11996532
    • 2006-01-30
    • Takashi AzumaShinichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • Takashi AzumaShinichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • G01N29/34H02N1/08
    • A61B8/4483A61B8/08A61B8/4281B06B1/0292G01N29/2431G01S15/00
    • The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103).
    • 由作为基本单元的隔膜电声换能器(101)构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响,导致主光束灵敏度的漂移, 由于声学噪声水平的上升引起的声学SN比的降低,以及超声波束的方向性的劣化。 为了解决这个问题,提供一种充电控制器(充电监视器211)来控制电声换能器(101)中的电荷。 充电监视部(102)监视充电量的变化。 当充电量的变化小时,通过例如将接收信号乘以对应于变化量的校准系数,由控制器(104)校准发射灵敏度或接收灵敏度。 此外,当电荷量的变化大时,例如,电荷可以从电荷发射体(103)重新发射。
    • 9. 发明申请
    • Electro-acoustic transducer device
    • 电声换能器装置
    • US20070057603A1
    • 2007-03-15
    • US11491198
    • 2006-07-24
    • Takashi AzumaShin-ichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • Takashi AzumaShin-ichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • H01L41/09
    • B06B1/0292H04R19/005
    • In a semiconductor diaphragm type electro-acoustic transducer device having no necessity for a DC bias voltage applied as a result of a charge-stored layer being provide between electrodes, electro-mechanical conversion efficiency undergoes a change owing to time-dependent change in a quantity of stored electricity due to leakage of charge, and so forth. As for sensitivity of signal reception, provided by an ultrasonic array-transducer made up of the electro-acoustic transducer devices each as a basic unit, not only a main beam sensitivity undergoes drift as a result of drift in the electromechanical conversion efficiency, but also there result deterioration in an acoustic S/N ratio, and deterioration in directionality of an ultrasonic beam. In order to resolve those problems, there is provided an electro-acoustic transducer device comprising a first electrode formed on top of, or inside a substrate, a thin film using silicon or a silicon compound as a base material thereof, provided on top of the substrate, a second electrode formed on top of, or inside the thin film, a void layer provided between the first electrode and the second electrode, a charge-stored layer for storing charge given by the first electrode and the second electrode, provided between the first electrode and the second electrode, and a source electrode and a drain electrode, for measuring a quantity of electricity stored in the charge-storage layer.
    • 在半导体膜式电声换能器装置中,由于在电极之间提供电荷存储层,所以不需要施加直流偏置电压,电 - 机转换效率由于时间上的变化而发生变化 由于电荷泄漏而导致的储存电力等。 对于由作为基本单元的电声换能器构成的超声波阵列换能器提供的信号接收的灵敏度,由于机电转换效率的漂移,主光束的灵敏度不但会发生漂移, 导致声S / N比的恶化,超声波束的方向性劣化。 为了解决这些问题,提供了一种电声换能器装置,其包括在基板之上或之内形成的第一电极,使用硅或硅化合物作为其基材的薄膜,其设置在 基板,形成在薄膜的上面或内部的第二电极,设置在第一电极和第二电极之间的空隙层,用于存储由第一电极和第二电极给出的电荷的电荷存储层, 第一电极和第二电极以及源电极和漏电极,用于测量存储在电荷存储层中的电量。
    • 10. 发明申请
    • ULTRASONOGRAPHIC DEVICE
    • 超声波设备
    • US20090301199A1
    • 2009-12-10
    • US11996532
    • 2006-01-30
    • Takashi AzumaShinichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • Takashi AzumaShinichiro UmemuraTatsuya NagataHiroshi FukudaShuntaro MachidaToshiyuki Mine
    • G01N29/34H02N1/08
    • A61B8/4483A61B8/08A61B8/4281B06B1/0292G01N29/2431G01S15/00
    • The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103). The series of operations is controlled by the controller (104), and thus sensitivity variation caused by difference in the changes with elapsed time, particularly between the plural transducers, is calibrated.
    • 由作为基本单元的隔膜电声换能器(101)构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响,导致主光束灵敏度的漂移, 由于声学噪声水平的上升引起的声学SN比的降低,以及超声波束的方向性的劣化。 为了解决这个问题,提供一种充电控制器(充电监视器211)来控制电声换能器(101)中的电荷。 充电监视部(102)监视充电量的变化。 当充电量的变化小时,通过例如将接收信号乘以对应于变化量的校准系数,由控制器(104)校准发射灵敏度或接收灵敏度。 此外,当电荷量的变化大时,例如,电荷可以从电荷发射体(103)重新发射。 一系列操作由控制器(104)控制,因此校正了由于经过时间的变化,特别是多个换能器之间的差异引起的灵敏度变化。