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21. 发明授权

US08178363B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08178363B2
公开(公告)日：2012-05-15
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

22. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

23. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

24. 发明申请

US20060209590A1 Amorphous layers in a magnetic tunnel junction device 失效
标题翻译：磁性隧道结装置中的无定形层
公开(公告)号：US20060209590A1
公开(公告)日：2006-09-21
申请号：US11080867
申请日：2005-03-15
申请人： Yimin Guo , Tai Min , Po-Kang Wang
发明人： Yimin Guo , Tai Min , Po-Kang Wang
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/15
摘要： An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.
摘要翻译：公开了一种改进的TMR装置。器件的铁磁层，特别是接触介电隧穿层的铁磁层具有无定形结构以及最小厚度（约15）。用于接触电介质层的优选材料是CoFeB。公开了克服与磁致伸缩相关的问题的方法，并且描述了用于制造该装置的方法。

25. 发明申请

US20100178715A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20100178715A1
公开(公告)日：2010-07-15
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

26. 发明授权

US08422287B2 Pulse field assisted spin momentum transfer MRAM design 有权
标题翻译：脉冲场辅助自旋动量转移MRAM设计
公开(公告)号：US08422287B2
公开(公告)日：2013-04-16
申请号：US12807611
申请日：2010-09-09
申请人： Tai Min , Qiang Chen , Po Kang Wang
发明人： Tai Min , Qiang Chen , Po Kang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.
摘要翻译： MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。

27. 发明授权

US07994596B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US07994596B2
公开(公告)日：2011-08-09
申请号：US11515533
申请日：2006-09-05
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由与在自由层上形成的薄的反铁磁层的磁耦合。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

28. 发明申请

US20080253178A1 MRAM with enhanced programming margin 有权
标题翻译： MRAM具有增强的编程余量
公开(公告)号：US20080253178A1
公开(公告)日：2008-10-16
申请号：US11787330
申请日：2007-04-16
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： G11C11/02 , H01L21/00
CPC分类号： G11C11/16
摘要： An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.
摘要翻译：描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。

29. 发明授权

US07345911B2 Multi-state thermally assisted storage 有权
标题翻译：多状态热辅助存储
公开(公告)号：US07345911B2
公开(公告)日：2008-03-18
申请号：US11353326
申请日：2006-02-14
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C11/5607
摘要： A random access memory cell is described which is capable of storing multiple information states in a single physical bit. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.
摘要翻译：描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元。基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

30. 发明授权

US07291892B2 Magnetic random access memory designs with controlled magnetic switching mechanism 失效
标题翻译：磁性随机存取存储器设计采用受控磁切换机制
公开(公告)号：US07291892B2
公开(公告)日：2007-11-06
申请号：US11386317
申请日：2006-03-22
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L43/00
CPC分类号： G11C11/16
摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform across the array.
摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。优选的实施方案将细胞形成为肾或花生的形状。这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的开关场可以以跨阵列有效和均匀的方式切换电池的磁化。

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