专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08143602B2 High-volume manufacturing massive e-beam maskless lithography system 有权
标题翻译：大批量生产大规模电子束无掩模光刻系统
公开(公告)号：US08143602B2
公开(公告)日：2012-03-27
申请号：US12411229
申请日：2009-03-25
申请人： Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
发明人： Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
IPC分类号： G21K5/08
CPC分类号： G03F7/70275 , B82Y10/00 , B82Y40/00 , G03F7/70291 , G03F7/70508 , H01J37/3177 , H01J2237/31762
摘要： The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.
摘要翻译：本公开提供一种无掩模光刻设备。该装置包括多个写入室，每个写入室包括：可操作以固定要写入的晶片的晶片台和可操作以提供用于写入晶片的多个辐射束的多光束模块; 可操作以在每个写入室之间传送晶片的接口和用于将成像层处理到晶片的轨道单元; 以及数据路径，其可操作以向每个写入室中的每个多个辐射束提供一组电路图案数据。

22. 发明授权

US07851774B2 System and method for direct writing to a wafer 有权
标题翻译：用于直接写入晶片的系统和方法
公开(公告)号：US07851774B2
公开(公告)日：2010-12-14
申请号：US12203494
申请日：2008-09-03
申请人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
发明人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
IPC分类号： H01J49/44
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.
摘要翻译：提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器沿轴扫描。宽度在与轴不同的方向。

23. 发明申请

US20100248158A1 HIGH-VOLUME MANUFACTURING MASSIVE E-BEAM MASKLESS LITHOGRAPHY SYSTEM 有权
标题翻译：高容量制造大质量电子束MASTRESS LITHOGRAPHY系统
公开(公告)号：US20100248158A1
公开(公告)日：2010-09-30
申请号：US12411229
申请日：2009-03-25
申请人： Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
发明人： Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
IPC分类号： G03F7/20 , G21K5/04
CPC分类号： G03F7/70275 , B82Y10/00 , B82Y40/00 , G03F7/70291 , G03F7/70508 , H01J37/3177 , H01J2237/31762
摘要： The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.
摘要翻译：本公开提供一种无掩模光刻设备。该装置包括多个写入室，每个写入室包括：可操作以固定要写入的晶片的晶片台和可操作以提供用于写入晶片的多个辐射束的多光束模块; 可操作以在每个写入室之间传送晶片的接口和用于将成像层处理到晶片的轨道单元; 以及数据路径，其可操作以向每个写入室中的每个多个辐射束提供一组电路图案数据。

24. 发明授权

US07796249B2 Mask haze early detection 有权
标题翻译：面罩雾霭早期检测
公开(公告)号：US07796249B2
公开(公告)日：2010-09-14
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

25. 发明申请

US20090063074A1 Mask Haze Early Detection 有权
标题翻译：面具阴霾早期检测
公开(公告)号：US20090063074A1
公开(公告)日：2009-03-05
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

26. 发明授权

US06379849B1 Method for forming binary intensity masks 有权
标题翻译：形成二进制强度掩模的方法
公开(公告)号：US06379849B1
公开(公告)日：2002-04-30
申请号：US09696081
申请日：2000-10-26
申请人： Shy-Jay Lin , Wen-Chuan Wang
发明人： Shy-Jay Lin , Wen-Chuan Wang
IPC分类号： G03F900
CPC分类号： G03F1/78 , G03F1/80 , G03F7/0035
摘要： A method for forming a binary intensity mask (BIM) using two writing steps. The first writing step has a narrow writing area, preferably about 1 micron, and outlines the desired pattern. The second writing area partially overlaps the first writing area, preferably by less than half of the E-beam diameter used for writing. The second writing does not overlap the desired pattern. The chromium layer of the BIM is dry etched after the first writing, providing good edge definition and dimensional stability. The chromium layer of the BIM is wet etched following the second writing reducing mask defects.
摘要翻译：一种使用两个写入步骤形成二进制强度掩模（BIM）的方法。第一写入步骤具有窄的写入区域，优选约1微米，并且概述所需的图案。第二写入区域部分地与第一写入区域重叠，优选地小于用于写入的电子束直径的一半。第二次写入不会与所需的图案重叠。 BIM的铬层在第一次写入之后被干蚀刻，提供良好的边缘清晰度和尺寸稳定性。在第二次写入减少掩模缺陷之后，BIM的铬层被湿蚀刻。

27. 发明授权

US07381344B1 Method to reduce particle level for dry-etch 有权
标题翻译：降低干法蚀刻的粒子水平的方法
公开(公告)号：US07381344B1
公开(公告)日：2008-06-03
申请号：US09310256
申请日：1999-05-12
申请人： Sheng-Chi Chin , Shy-Jay Lin
发明人： Sheng-Chi Chin , Shy-Jay Lin
IPC分类号： B44C1/22
CPC分类号： H01J37/321 , H01J37/32862 , Y10S438/905
摘要： The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the complete power-down sequence consists of six steps. These six steps are executed in sequence and without interruption and form the totality of the dry-etch chamber power-down procedure.
摘要翻译：本发明教导了一种用于关闭干蚀刻工艺的多步骤方法。在干蚀刻工艺的这些连续断电步骤中的每一个之间，ICP rf功率减小，完整的掉电序列由六个步骤组成。这六个步骤依次执行并且不间断地形成干蚀刻室掉电过程的总体。

28. 发明授权

US06799312B1 Dark line CD and XY-CD improvement method of the variable shaped beam lithography in mask or wafer making 有权
标题翻译：可变形光束光刻在掩模或晶圆制造中的暗线CD和XY-CD改进方法
公开(公告)号：US06799312B1
公开(公告)日：2004-09-28
申请号：US09584428
申请日：2000-06-05
申请人： Fei-Gwo Tsai , Shy-Jay Lin
发明人： Fei-Gwo Tsai , Shy-Jay Lin
IPC分类号： G06F1750
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31762 , H01J2237/31764
摘要： This invention provides a method of using an electron beam exposure system having an electron beam with a variable shape to form patterns in a layer of resist on a substrate, a mask substrate or an integrated circuit wafer, while maintaining adequate critical dimension control and beam stability. This is accomplished by setting the electron beam to a fixed square beam with a width set to provide optimum XY critical dimension control for exposing a frame pattern surrounding the original pattern. The frame pattern has a width of a first distance and surrounds the outer perimeter of the original pattern. This provides optimum XY critical dimension control at the outer perimeter of the original pattern. The remainder of the exposure field, which is the exposure field with the original pattern and the frame pattern subtracted away is exposed using an electron beam having a variable size and shape. In one embodiment the exposure of the frame pattern is completed before the exposure of the remainder pattern is carried out. Alternatively, the exposure of the remainder pattern can be completed before the exposure of the frame pattern is carried out. The digital design data for the frame pattern and the remainder of the exposure field is formed using a computer processor and the original design data.
摘要翻译：本发明提供一种使用具有可变形状的电子束的电子束曝光系统的方法，以在基板，掩模基板或集成电路晶片上的抗蚀剂层中形成图案，同时保持适当的临界尺寸控制和光束稳定性。这是通过将电子束设置为具有设置的宽度的固定方波来实现的，以提供用于曝光围绕原始图案的帧图案的最佳XY临界尺寸控制。框架图案具有第一距离的宽度并且围绕原始图案的外周边。这在原始图案的外围提供了最佳的XY临界尺寸控制。使用具有可变尺寸和形状的电子束来曝光曝光场的剩余部分，其中原始图案和帧图案的曝光场被减去。在一个实施例中，在执行余下图案的曝光之前完成帧图案的曝光。或者，可以在执行帧图案的曝光之前完成余数图案的曝光。使用计算机处理器和原始设计数据形成帧图案的数字设计数据和曝光场的其余部分。

29. 发明授权

US6018392A Apparatus and method for inspecting phase shifting masks 有权
标题翻译：用于检查相移掩模的装置和方法
公开(公告)号：US6018392A
公开(公告)日：2000-01-25
申请号：US177340
申请日：1998-10-23
申请人： San-De Tzu , Shy-Jay Lin
发明人： San-De Tzu , Shy-Jay Lin
IPC分类号： G01N21/956 , G03F1/26 , G03F1/84 , G01B9/02
CPC分类号： G03F1/84 , G01N21/95607 , G03F1/26
摘要： An apparatus for die to die inspection of masks having transparent phase shifting elements and a method of die to die inspection of masks having transparent phase shifting elements. Light from a light source is directed through a transparent mask substrate and a phase shifting mask element to a first objective lens, and through the transparent mask substrate and another phase shifting mask element to a second objective lens. Light from the first objective lens is then given a 180.degree. phase shift by a phase adjustment unit. Light from the phase adjustment unit and the second objective lens is combined at a split mirror and directed to a detector. The method makes use of the fact that the intensity of the light at the detector is proportional to the square of the cosine of one half of the phase angle between the light from the phase adjusting unit and light from the second objective lens. If the intensity of light reaching the detector is not zero, or very small, the mask has a defect.
摘要翻译：一种用于对具有透明相移元件的掩模进行裸片检查的设备，以及对具有透明移相元件的掩模进行裸片检查的方法。来自光源的光通过透明掩模基板和相移掩模元件引导到第一物镜，并且通过透明掩模基板和另一相移掩模元件引导到第二物镜。然后通过相位调整单元对来自第一物镜的光进行180°相移。来自相位调整单元和第二物镜的光在分离镜处组合并被引导到检测器。该方法利用了检测器的光强度与来自相位调整单元的光和来自第二物镜的光之间的相位角的一半的余弦平方成正比的事实。如果到达检测器的光的强度不为零或非常小，则掩模具有缺陷。

30. 发明授权

US08464186B2 Providing electron beam proximity effect correction by simulating write operations of polygonal shapes 有权
标题翻译：通过模拟多边形的写入操作提供电子束邻近效应校正
公开(公告)号：US08464186B2
公开(公告)日：2013-06-11
申请号：US13011165
申请日：2011-01-21
申请人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G03F1/144 , G03F1/78 , G03F7/70283 , G03F7/70441 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01L21/0274 , H01L21/0275
摘要： A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
摘要翻译：使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。第一多边形形状占据第一虚拟层并且包括第一组像素。该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。第二多边形形状占据第二虚拟层。该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式