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21. 发明授权

US08519439B2 Nitride semiconductor element with N-face semiconductor crystal layer 失效
标题翻译：具有N面半导体晶体层的氮化物半导体元件
公开(公告)号：US08519439B2
公开(公告)日：2013-08-27
申请号：US13239229
申请日：2011-09-21
申请人： Wataru Saito , Hidetoshi Fujimoto
发明人： Wataru Saito , Hidetoshi Fujimoto
IPC分类号： H01L29/66
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7781
摘要： According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.
摘要翻译：根据一个实施例，半导体元件包括第一半导体层。第一半导体层包含AlXGa1-XN。第一半导体层的顶层由氮端接。半导体元件包括形成在第一半导体层上的含有非掺杂或第一导电型AlYGa1-YN的第二半导体层。半导体元件包括形成在第二半导体层上的含有AlZGa1-ZN的第三半导体层。半导体元件包括连接到第三半导体层的第一主电极。半导体元件包括连接到第三半导体层的第二主电极。半导体元件包括设置在第一主电极和第二主电极之间的第三半导体层上的栅电极。

22. 发明申请

US20120187452A1 SEMICONDUCTOR ELEMENT 失效
标题翻译：半导体元件
公开(公告)号：US20120187452A1
公开(公告)日：2012-07-26
申请号：US13239229
申请日：2011-09-21
申请人： Wataru Saito , Hidetoshi Fujimoto
发明人： Wataru Saito , Hidetoshi Fujimoto
IPC分类号： H01L29/78 , H01L29/205
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7781
摘要： According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.
摘要翻译：根据一个实施例，半导体元件包括第一半导体层。第一半导体层包含AlXGa1-XN。第一半导体层的顶层由氮端接。半导体元件包括形成在第一半导体层上的含有非掺杂或第一导电型AlYGa1-YN的第二半导体层。半导体元件包括形成在第二半导体层上的含有AlZGa1-ZN的第三半导体层。半导体元件包括连接到第三半导体层的第一主电极。半导体元件包括连接到第三半导体层的第二主电极。半导体元件包括设置在第一主电极和第二主电极之间的第三半导体层上的栅电极。

23. 发明申请

US20050189565A1 Bipolar transistor and method of manufacturing the same 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US20050189565A1
公开(公告)日：2005-09-01
申请号：US11053548
申请日：2005-02-09
申请人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
发明人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
IPC分类号： H01L21/331 , H01L29/10 , H01L29/22 , H01L29/267 , H01L29/737
CPC分类号： H01L29/267 , H01L29/1004 , H01L29/7371
摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.
摘要翻译：提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层，形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

24. 发明授权

US07157749B2 Bipolar transistor with a GaAs substrate and a SiGe base or collector 失效
标题翻译：具有GaAs衬底和SiGe基极或集电极的双极晶体管
公开(公告)号：US07157749B2
公开(公告)日：2007-01-02
申请号：US11053548
申请日：2005-02-09
申请人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
发明人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/267 , H01L29/1004 , H01L29/7371
摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.
摘要翻译：提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层，形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

25. 发明授权

US08560573B2 Map difference data generation apparatus and map difference data generation method 有权
标题翻译：地图差异数据生成装置和地图差异数据生成方法
公开(公告)号：US08560573B2
公开(公告)日：2013-10-15
申请号：US13557567
申请日：2012-07-25
申请人： Takayuki Watanabe , Hidetoshi Fujimoto , Takamitsu Suzuki , Takayuki Suzuki , Kaoru Shibata , Akio Samizu
发明人： Takayuki Watanabe , Hidetoshi Fujimoto , Takamitsu Suzuki , Takayuki Suzuki , Kaoru Shibata , Akio Samizu
IPC分类号： G06F17/30
CPC分类号： G01C21/32 , G09B29/106
摘要： A map difference data generation apparatus includes: most recent and supplementary map data storage devices storing primary most recent and supplementary map data, respectively; a map update reflection device generating secondly most recent and supplementary map data according to an update of a first link, and generating tertiary most recent and supplementary map data according to an update of a second link; a determination device determining a dependency relationship between the update of the first and second links, in accordance with results of searching a route in the tertiary most recent and supplementary map data between first and second nodes, which are both ends of the second link; and a map difference data generation device generating map difference data, which defines a combination of the update of the first and second links, when the update of the first and second links have the dependency relationship.
摘要翻译：地图差分数据生成装置包括：分别存储主要最新和附加地图数据的最新和补充地图数据存储装置; 地图更新反射装置，根据第一链路的更新生成第二最新和补充地图数据，并根据第二链路的更新生成第三最新和补充地图数据; 确定装置，根据在第三最新的路由搜索的结果和作为第二链路的两端的第一和第二节点之间的补充地图数据的结果来确定第一和第二链路的更新之间的依赖关系; 以及当所述第一和第二链路的更新具有依赖关系时，生成映射差异数据的地图差分数据生成装置，所述地图差分数据定义所述第一和第二链接的更新的组合。

26. 发明申请

US20070208505A1 Map data updating method 有权
标题翻译：地图数据更新方法
公开(公告)号：US20070208505A1
公开(公告)日：2007-09-06
申请号：US11712543
申请日：2007-03-01
申请人： Hidetoshi Fujimoto
发明人： Hidetoshi Fujimoto
IPC分类号： G01C21/32
CPC分类号： G09B29/106 , G01C21/32
摘要： An information center has an all-road updating data and a main-road updating data. The all-road updating data is a difference of all roads extracted from an all-road map data, and the main-road updating map data is a difference of specified roads extracted from the all-road map data. A map display system executes a reverse-updating to return the map data to a previous state not updated with the main-road updated map data, when its map data has already been updated with the main-road updated map data. The map display system then executes updating of the map data with the all-road updated map data.
摘要翻译：信息中心具有全路更新数据和主路更新数据。全路更新数据是从全路地图数据提取的所有道路的差异，主道路更新地图数据是从全路地图数据提取的特定道路的差。当地图数据已经用主路更新的地图数据更新时，地图显示系统执行反向更新以将地图数据返回到未被主路更新的地图数据更新的先前状态。然后，地图显示系统使用全路更新的地图数据执行地图数据的更新。

27. 发明授权

US06835963B2 Light-emitting element and method of fabrication thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US06835963B2
公开(公告)日：2004-12-28
申请号：US10465649
申请日：2003-06-20
申请人： Genichi Hatakoshi , Hidetoshi Fujimoto , Mamoru Terauchi
发明人： Genichi Hatakoshi , Hidetoshi Fujimoto , Mamoru Terauchi
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/145 , H01L33/385 , H01L33/46
摘要： This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.
摘要翻译：本发明提供一种发光元件，其包括由氮化物半导体构成的发光部分; 以及第一波前转换器，用于将从发光部分发射的光的辐射形状转换成小于其波长的辐射形状，并将其发射为输出光。在这种情况下，第一波前转换器具有比从发光部发射的光的波长小的直径的小孔径。如果使输出光包括通过该小孔向外部发射的ev逝波，则可以获得极小的光点。本发明还涉及包括发光层的多层结构的表面发射型发光元件; 以及一对用于向发光层供给电流的电极; 其中输出光从所述多层结构的顶部上的发光表面发射; 并且一对电极从发光面凹入发光层侧。由此，能够使发光面与被照射体接近。通过使用来自发光部的光，能够以自对准的方式打开小光圈。结果，可以提供一种产生适合于与光盘等一起使用的光束特性的发光元件及其制造方法。

28. 发明授权

US6119066A Vehicle navigation system and method for setting direction labels for connecting roads 失效
标题翻译：车辆导航系统及连接道路方向标签的方法
公开(公告)号：US6119066A
公开(公告)日：2000-09-12
申请号：US917847
申请日：1997-08-27
申请人： Wataru Sugiura , Osamu Kanematsu , Hidetoshi Fujimoto
发明人： Wataru Sugiura , Osamu Kanematsu , Hidetoshi Fujimoto
IPC分类号： G09B29/00 , G01C21/00 , G01C21/36 , G08G1/0969 , G06F165/00
CPC分类号： G01C21/3632 , G08G1/0969
摘要： When a vehicle is within a predetermined distance from an intersection during the execution of navigation operations, a navigation system displays an enlarged guide map of the same intersection. The guide map shows direction labels that are set for roads that are connected to a road to be approached by the vehicle. The direction labels are set for the connecting roads by tracking the connecting roads and by determining appropriate direction labels following a predetermined procedure. For example, names of tollgates, names of stations, names of special facilities, names of administrative units, names of highways or the like may be set as direction labels.
摘要翻译：在导航操作执行期间，当车辆距交叉路口的预定距离内时，导航系统显示相同交叉口的放大引导图。指南图显示了为连接到车辆接近的道路的道路设置的方向标签。通过跟踪连接道路并按照预定程序确定适当的方向标签，为连接道路设置方向标签。例如，可以将收件人姓名，车站名称，特殊设施名称，行政单位名称，公路名称等设置为方向标签。

29. 发明授权

US5903017A Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN 失效
标题翻译：由含氮镓化合物如GaN，AlGaN或InGaN形成的化合物半导体器件
公开(公告)号：US5903017A
公开(公告)日：1999-05-11
申请号：US802931
申请日：1997-02-20
申请人： Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , Mariko Suzuki , Lisa Sugiura
发明人： Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , Mariko Suzuki , Lisa Sugiura
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01L29/36 , H01S3/19
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/325 , H01S5/305 , H01S5/32341 , H01S5/343 , H01S5/0422 , H01S5/3063 , H01S5/3201 , H01S5/34333
摘要： A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x) N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.bg1, N is equal to an Mg background level in additive-free Ga.sub.1-x Al.sub.x N.
摘要翻译：基于氮化镓（GaN）的半导体器件包括基板，主要由Mg（Mg）浓度为Nbg1cm-3的GaN组成的单晶层，单晶层设置在基板附近并具有厚度以及主要由Ga1-xAlxN组成的半导体层，其Al组分x为至少0.02且不高于1，厚度为d2μm。单晶层位于基板和半导体层之间，并以NMg cm-3的浓度将Mg添加到半导体层。 Al组分x，浓度NMg，浓度Nbg1，厚度d1和厚度d2具有以下关系式1 /（1600xx） Nbg1，N cm-3 = NMg-Nbg1，当NMg = Nbg1时，N等于添加剂Ga1-xAlxN中的Mg背景水平。

30. 发明授权

US5864171A Semiconductor optoelectric device and method of manufacturing the same 失效
公开(公告)号：US5864171A
公开(公告)日：1999-01-26
申请号：US623829
申请日：1996-03-29
申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
发明人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
IPC分类号： H01L21/203 , H01L21/301 , H01L21/31 , H01L33/06 , H01L33/16 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/327 , H01L33/00 , H01S3/19
CPC分类号： H01L33/20 , H01L33/16 , H01S5/0202 , H01S5/0213 , H01S5/3202 , H01S5/3226 , H01S5/32341 , Y10S438/973 , Y10S438/975
摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

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