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    • 27. 发明授权
    • Interconnects forming method and interconnects forming apparatus
    • 互连形成方法和互连形成装置
    • US07374584B2
    • 2008-05-20
    • US11783186
    • 2007-04-06
    • Xinming WangDaisuke TakagiAkihiko TashiroYukio FukunagaAkira Fukunaga
    • Xinming WangDaisuke TakagiAkihiko TashiroYukio FukunagaAkira Fukunaga
    • H01L21/00
    • H01L21/76849H01L21/76819H01L21/7685Y10S438/976Y10T29/41
    • The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
    • 本发明提供一种互连形成方法和互连形成装置,其能够最小化蚀刻中的处理精度的降低,使在多层互连的制造中形成互连凹槽的光曝光处理最小化,提高电镀迁移电阻 互连,而不损害互连的电性能,并且增强器件的可靠性。 互连形成方法包括在形成在基板的表面中的绝缘膜中提供互连凹槽; 在互连凹槽中嵌入互连材料,同时在绝缘膜的表面上形成互连材料的金属膜; 除去互连凹部中的金属材料以外的多余的金属材料,使基板表面变平,从而形成互连件; 在互连的暴露表面上选择性地形成导电材料的第一保护膜; 在具有如此形成的第一保护膜的基板的表面上形成第二保护膜; 在具有如此形成的第二保护膜的基板的表面上形成层间绝缘膜; 并平坦化层间绝缘膜的表面。