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21. 发明授权

US08269717B2 Photodetection device and image display device 有权
标题翻译：光电检测装置和图像显示装置
公开(公告)号：US08269717B2
公开(公告)日：2012-09-18
申请号：US12819849
申请日：2010-06-21
申请人： Toshihiko Omi , Taro Nakata
发明人： Toshihiko Omi , Taro Nakata
IPC分类号： G09G3/36
CPC分类号： H01L31/101 , G01J1/02 , G01J1/0209 , G01J1/0214 , G01J1/0488 , G01J1/18 , G01J1/32 , G01J1/4204 , G01J1/4228 , G01J1/44 , G02F2201/58
摘要： Provided is a photodetection device which is small in size and has excellent sensitivity. The photodetection device (10) puts cathode terminals of photodiodes (1 and 2) having different spectral characteristics, or a photodiode (1) provided with an optical filter and a photodiode (2) provided with a light shield layer, into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. Since the photodiodes 1 and 2 store electric charges, even if a photocurrent is small, it is possible to store the photocurrent to obtain the electric charges required for detection, permitting achievement of downsizing and high detection performance of the semiconductor device on which the photodiodes 1 and 2 are formed. It is also possible to realize a wide dynamic range by making the electric charge storage time variable according to the light intensity, to suppress electric power consumption by intermittently driving an element required for differential detection at the time of differential detection, and to reduce an effect from flicker by averaging the output.
摘要翻译：提供了一种尺寸小且灵敏度高的光检测装置。光检测装置（10）将具有不同光谱特性的光电二极管（1和2）的阴极端子或设置有滤光器的光电二极管（1）和设置有遮光层的光电二极管（2）放入开放状态并且根据在给定时间段内存储在那些光电二极管中的电荷的差异来检测期望波长区域的光强度。由于光电二极管1和2存储电荷，即使光电流小，也可以存储光电流以获得检测所需的电荷，从而可以实现半导体器件的小型化和高检测性能，其中光电二极管1 和2。还可以通过使电荷存储时间根据光强度而变化来实现宽的动态范围，通过间歇地驱动差分检测时的差分检测所需的元件来抑制电力消耗，并且降低效果从平均输出的闪烁。

22. 发明申请

US20120001280A1 Hall sensor 有权
标题翻译：霍尔传感器
公开(公告)号：US20120001280A1
公开(公告)日：2012-01-05
申请号：US13135301
申请日：2011-06-30
申请人： Takaaki Hioka , Toshihiko Omi
发明人： Takaaki Hioka , Toshihiko Omi
IPC分类号： H01L29/82
CPC分类号： H01L43/065 , G01R33/07
摘要： Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. The Hall element includes: a Hall sensing portion having a shape of a cross and four convex portions; Hall voltage output terminals which are arranged at the centers of the front edges of the four convex portions, respectively; and control current input terminals which are arranged on side surfaces of each of the convex portions independently of the Hall voltage output terminals. In this case, the Hall voltage output terminal has a small width and the control current input terminal has a large width.
摘要翻译：提供了一种高灵敏度的霍尔元件，能够在不增加芯片尺寸的情况下消除偏移电压。霍尔元件包括：具有十字形和四个凸部形状的霍尔感测部分; 霍尔电压输出端子分别布置在四个凸部的前边缘的中心处; 以及与霍尔电压输出端子独立地布置在每个凸部的侧表面上的控制电流输入端子。在这种情况下，霍尔电压输出端子具有较小的宽度，并且控制电流输入端子具有较大的宽度。

23. 发明申请

US20120001279A1 Hall sensor 有权
标题翻译：霍尔传感器
公开(公告)号：US20120001279A1
公开(公告)日：2012-01-05
申请号：US13135299
申请日：2011-06-30
申请人： Takaaki Hioka , Toshihiko Omi
发明人： Takaaki Hioka , Toshihiko Omi
IPC分类号： H01L29/82
CPC分类号： H01L43/065 , G01R33/07
摘要： Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. At the four vertices of a square Hall sensing portion, Hall voltage output terminals and control current input terminals are respectively arranged independently from each other. The Hall voltage output terminals all have the same shape. The control current input terminals are arranged on both sides of the Hall voltage output terminals, respectively, to be spaced apart from the Hall voltage output terminals so as to prevent electrical connection to the Hall voltage output terminals, and have the same shape at the four vertices.
摘要翻译：提供了一种高灵敏度的霍尔元件，能够在不增加芯片尺寸的情况下消除偏移电压。在方形霍尔感测部分的四个顶点处，霍尔电压输出端子和控制电流输入端子彼此独立地布置。霍尔电压输出端子都具有相同的形状。控制电流输入端子分别布置在霍尔电压输出端子的两侧，与霍尔电压输出端子间隔开，以防止与霍尔电压输出端子的电连接，并且在四通道上具有相同的形状顶点。

24. 发明申请

US20080180512A1 Thermal head driving IC and method of controlling the same 有权
标题翻译：热敏头驱动IC及其控制方法
公开(公告)号：US20080180512A1
公开(公告)日：2008-07-31
申请号：US12011383
申请日：2008-01-24
申请人： Tadao Akamine , Toshihiko Omi
发明人： Tadao Akamine , Toshihiko Omi
IPC分类号： B41J2/35
CPC分类号： B41J2/35
摘要： Provided is a thermal head driving IC for supplying voltage to a plurality of heating resistors each controlled by a driving MOS transistor, including a switch for making and breaking between a substrate and a source of the plurality of driving MOS transistors. In a case where the plurality of heating resistors are activated, the plurality of driving MOS transistors are turned on and the switch is turned off, a substrate is floated. As a result, a substrate potential is forward-biased against the source by a substrate current generated in a high-electric-field depletion region near the drain, and a parasitic bipolar transistor turns on, whereby both the plurality of driving MOS transistors and the parasitic bipolar transistor turn on. In a case where the plurality of heating resistors are not activated, a signal for turning off the plurality of driving NMOS transistors is given, and the switch is turned on.
摘要翻译：提供了一种用于向由驱动MOS晶体管控制的多个加热电阻器提供电压的热敏头驱动IC，包括用于在基板和多个驱动MOS晶体管的源极之间制造和断开的开关。在多个加热电阻器被激活的情况下，多个驱动MOS晶体管导通，开关截止，基板浮起。结果，衬底电位通过在漏极附近的高电场耗尽区域中产生的衬底电流而相对于源极被正向偏置，并且寄生双极晶体管导通，由此多个驱动MOS晶体管和寄生双极晶体管导通。在多个加热电阻器未被激活的情况下，给出用于关闭多个驱动NMOS晶体管的信号，并且开关导通。

25. 发明授权

US06759700B2 Optical sensor and manufacturing method of the same 有权
标题翻译：光传感器及其制造方法相同
公开(公告)号：US06759700B2
公开(公告)日：2004-07-06
申请号：US10005036
申请日：2001-12-04
申请人： Toshihiko Omi
发明人： Toshihiko Omi
IPC分类号： H01L31062
CPC分类号： H01L27/14609 , H01L27/14689
摘要： A high-sensitive optical sensor is provided. In the optical sensor in which MOS transistors and a semiconductor light-receiving element are integrated, the light-receiving element includes a PN junction, and charges generated by the irradiation with light are accumulated at the PN junction, the PN junction of the light-receiving element is isolated from well regions of the MOS transistors.
摘要翻译：提供了一种高灵敏度的光学传感器。在其中集成有MOS晶体管和半导体光接收元件的光学传感器中，光接收元件包括PN结，并且通过用光照射产生的电荷在PN结处累积，接收元件与MOS晶体管的阱区隔离。

26. 发明授权

US06750531B2 Semiconductor device having polycrystalline silicon film resistor and manufacturing method therefor 有权
标题翻译：具有多晶硅膜电阻器的半导体器件及其制造方法
公开(公告)号：US06750531B2
公开(公告)日：2004-06-15
申请号：US10245410
申请日：2002-09-17
申请人： Nobuo Takei , Toshihiko Omi , Keisuke Uemura
发明人： Nobuo Takei , Toshihiko Omi , Keisuke Uemura
IPC分类号： H01L2900
CPC分类号： H01L28/20 , H01L27/0802
摘要： To provide a semiconductor device in which reduction of a variation in resistance value of a polycrystalline silicon film resistor is promoted. In a semiconductor device and a manufacturing method therefor according to the present invention, when the polycrystalline silicon film resistor is formed, a construction thereof is achieved by determining an implantation amount of an impurity implanted into the polycrystalline silicon film resistor through a novel technique to constitute a semiconductor integrated circuit device superior in performance.
摘要翻译：提供一种促进多晶硅膜电阻器的电阻值变化减小的半导体器件。在根据本发明的半导体器件及其制造方法中，当形成多晶硅膜电阻器时，其结构通过以下新技术确定注入到多晶硅膜电阻器中的杂质的注入量来实现：一种性能优越的半导体集成电路器件。

27. 发明授权

US5801313A Capacitive sensor 失效
标题翻译：电容传感器
公开(公告)号：US5801313A
公开(公告)日：1998-09-01
申请号：US653301
申请日：1996-05-24
申请人： Kenji Horibata , Toshihiko Omi , Fumihiko Sato
发明人： Kenji Horibata , Toshihiko Omi , Fumihiko Sato
IPC分类号： G01L9/00 , G01L9/12 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/0802 , G01L9/0073 , G01P15/125 , G01P2015/084
摘要： To provide a capacitive sensor which produces a sensor output excellent in linearity. The capacitive sensor comprises a first semiconductor substrate and a second substrate. The first semiconductor substrate is formed with a frame portion and a diaphragm portion serving as a movable electrode, and bonded with the second substrate at the upper surface of the frame portion by anodic bonding. The second substrate is provided with a fixed electrode on a surface facing the diaphragm portion. A fixing projection is provided on a center of the diaphragm portion and is fixed to the second substrate through a hole of the fixed electrode. When external force is applied to the sensor, the diaphragm portion displaces upward and/or downward. The external force is detected based on change of electrostatic capacitance. Since the center of the diaphragm portion is fixed by the fixing projection, the maximum displacement region of the diaphragm portion forms a ring, resulting in enhancement of linearity of the sensor output.
摘要翻译：提供一种产生线性优良的传感器输出的电容传感器。电容传感器包括第一半导体衬底和第二衬底。第一半导体衬底形成有框架部分和用作可动电极的隔膜部分，并且通过阳极接合在框架部分的上表面处与第二衬底结合。第二基板在面向隔膜部分的表面上设置有固定电极。固定突起设置在隔膜部分的中心，并通过固定电极的孔固定到第二基板。当外力对传感器施加时，隔膜部分向上和/或向下移动。根据静电电容的变化检测外力。由于隔膜部分的中心通过固定突起固定，所以隔膜部分的最大位移区域形成环，从而提高传感器输出的线性。

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