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21. 发明授权

US4510414A Electron excited fluorescent display device including screen with rare earth phosphor exhibiting sublinear current density-emission luminance characteristics 失效
标题翻译：电子激发荧光显示装置，包括具有稀土荧光体的显示子线电流密度 - 发射亮度特性的屏幕
公开(公告)号：US4510414A
公开(公告)日：1985-04-09
申请号：US474600
申请日：1983-03-09
申请人： Sigeo Fujino , Takashi Hase , Akio Toshinai
发明人： Sigeo Fujino , Takashi Hase , Akio Toshinai
IPC分类号： C09K11/77 , C09K11/84 , H01J29/18 , H01J29/20 , H01J29/26 , C09K11/08
CPC分类号： H01J29/26 , C09K11/7789 , H01J29/187 , H01J29/20
摘要： A rear earth yellow to red emitting phosphor exhibiting the sublinear characteristics when the current density of an excitation electron beam is increased. The phosphor is represented by the general formula:(Ln.sub.1-x-y,Eu.sub.x,Ce.sub.y).sub.2 O.sub.2 Sin which Ln is at least one of yttrium, gadolinium, lanthanum and lutetium, x is a number satisfying 10.sup.-4 .ltoreq.x.ltoreq.9.times.10.sup.-2, preferably 10.sup.-2 .ltoreq.x.ltoreq.8.times.10.sup.-2, and y is a number satisfying 10.sup.-6 .ltoreq.y.ltoreq.2.times.10.sup.-3, preferably 2.times.10.sup.-6 .ltoreq.y.ltoreq.10.sup.-3. It exhibits a wide reproduced color range, and free of color drift at a high current. The phosphor is suitable for use in a multi-color cathode ray tube and a multi-color low-velocity electron excited fluorescent display device, and makes it possible to realize a high-performance electronic display unit.
摘要翻译： PCT No.PCT / JP82 / 00286 Sec。 371日期1983年3月9日 102（e）1983年3月9日PCT提交1982年7月23日PCT公布。公开号WO83 / 00342 日期：1983年2月3日。当激发电子束的电流密度增加时，表现出亚线性特性的后地黄色至红色发射荧光体。荧光体由以下通式表示：（Ln1-xy，Eux，Cey）2O2S，其中Ln是钇，钆，镧和镥中的至少一种，x是满足10-4 = 9×10 -2，优选为10 -2×x×8×10 -2，y为满足10-6≤X≤2×10-3，优选2×10-6≤y≤2的数。 10-3。它呈现出广泛的再现色彩范围，并且在高电流下没有颜色漂移。该荧光体适用于多色阴极射线管和多色低速电子激发荧光显示装置，可实现高性能电子显示装置。

22. 发明授权

US4119562A Fluorescent compositions 失效
标题翻译：荧光组合物
公开(公告)号：US4119562A
公开(公告)日：1978-10-10
申请号：US760720
申请日：1977-01-19
申请人： Akiyasu Kagami , Takashi Hase , Yoshiyuki Mimura , Kinichiro Narita , Minoru Hiraki
发明人： Akiyasu Kagami , Takashi Hase , Yoshiyuki Mimura , Kinichiro Narita , Minoru Hiraki
IPC分类号： C09K11/08 , C09K11/64 , C09K11/77 , C09K11/46
CPC分类号： C09K11/7731 , C09K11/0805 , C09K11/642 , C09K11/7766 , C09K11/7767 , C09K11/7771 , C09K11/7774
摘要： Fluorescent compositions which contain zinc oxide and one phosphor selected from the group hereinafter defined in a weight ratio within the range of 1/9 to 9/1, and fluorescent display devices having said fluorescent compositions in the form of a fluorescent screen, which can emit green, blue or red light under low-velocity electron excitation, said group consisting of a copper and aluminium activated zinc cadmium sulfide phosphor [(Zn.sub.1-x, Cd.sub.x)S:Cu, Al, wherein 0.ltoreq.x.ltoreq.0.1], a cerium activated yttrium aluminium gallium oxide phosphor [Y.sub.3 (Al.sub.1-y, Ga.sub.y).sub.5 O.sub.12 :Ce, wherein 0.ltoreq.y.ltoreq.0.5], a manganese activated zinc silicate phosphor (Zn.sub.2 SiO.sub.4 :Mn), a terbium activated yttrium lanthanum oxysulfide phosphor [(Y.sub.1-z, La.sub.z).sub.2 O.sub.2 S:Tb, wherein 0.ltoreq.z.ltoreq.1], a europium activated strontium gallium sulfide phosphor (SrGa.sub.2 S.sub.4 :Eu.sup.2+), a silver activated zinc sulfide phosphor (ZnS:Ag), and a europium activated yttrium oxysulfide phosphor (Y.sub.2 O.sub.2 S:Eu).
摘要翻译：荧光组合物，其含有氧化锌和一种荧光体，其选自下文所定义的重量比在1/9至9/1的范围内，荧光显示装置具有荧光屏形式的荧光组合物，其可以发射绿色，蓝色或红色光在低速电子激发下，所述组由铜和铝活化的硫化镉锌荧光体[（Zn1-x，Cdx）S：Cu，Al）组成，其中0≤x≤0.1 ]，铈活化的钇铝镓氧化物荧光体[Y3（Al1-y，Gay）5O12：Ce，其中0≤y≤0.5]，锰活化的硅酸锌磷光体（Zn2SiO4：Mn），铽激活钇氧化硫化镧荧光体[（Y1-z，Laz）2O2S：Tb，其中0≤z≤1]，铕活化锶硫化镓荧光体（SrGa2S4：Eu2 +），银活化硫化锌荧光体（ZnS： Ag）和铕活化的氧硫化钇荧光体（Y 2 O 2 S：Eu）。

23. 发明授权

US4000436A Gaseous discharge luminous device 失效
标题翻译：气体放电发光装置
公开(公告)号：US4000436A
公开(公告)日：1976-12-28
申请号：US653777
申请日：1976-01-30
申请人： Takao Toryu , Akiyasu Kagami , Takashi Hase , Junro Koike , Tetsuo Sakai , Hiroshi Murakami , Iwao Oishi
发明人： Takao Toryu , Akiyasu Kagami , Takashi Hase , Junro Koike , Tetsuo Sakai , Hiroshi Murakami , Iwao Oishi
IPC分类号： H01J17/20 , H01J17/49 , H01J61/44 , H01J61/06 , H01J61/16
CPC分类号： H01J17/20 , H01J17/492 , H01J61/44
摘要： A luminous device includes a cell, electrodes having a discharge gap of from 0.1 to 3.0 mm, a phosphor and a gas at a pressure of 30 to 300 nm, the gas having discharge emission spectra below 200 nm. The phosphor is one of various cerium activated yttrium silicates or europium activated orthophosphates and is disposed in the cell for exposure to the emission discharge of the gas. The device gives off blue light with higher emission efficiency and chroma saturation.
摘要翻译：发光装置包括电池，放电间隙为0.1〜3.0mm的电极，荧光体和压力为30〜300nm的气体，放电发射光谱低于200nm。磷光体是各种铈活化的硅酸钇或活化铕的正磷酸盐之一，并且设置在电池中用于暴露于气体的排放。该装置发出具有更高发射效率和色度饱和度的蓝光。

24. 发明授权

US08729778B2 Electromechanical transducer and actuator 有权
标题翻译：机电换能器和执行器
公开(公告)号：US08729778B2
公开(公告)日：2014-05-20
申请号：US13475057
申请日：2012-05-18
申请人： Masanaga Nishikawa , Takashi Hase , Toshio Nishimura
发明人： Masanaga Nishikawa , Takashi Hase , Toshio Nishimura
IPC分类号： H01L41/08
CPC分类号： H01L41/083 , G02B7/06 , G02B7/08 , H02N2/002 , H02N2/025
摘要： An electromechanical transducer that includes an elongating/contracting member and a driving member. The elongating/contracting member elongates and contracts in response to application of a voltage thereto. The elongating/contracting member has a side surface that is parallel to an elongation/contraction direction. The driving member is provided on the side surface of the elongating/contracting member. The driving member is displaced with elongation and contraction of the elongating/contracting member.
摘要翻译：一种包括伸长/收缩构件和驱动构件的机电换能器。延伸/收缩构件响应于施加电压而伸长和收缩。拉伸/收缩构件具有平行于伸长/收缩方向的侧表面。驱动构件设置在拉伸/收缩构件的侧表面上。驱动构件随伸长/收缩构件的伸长和收缩而移动。

25. 发明授权

US07968947B2 Semiconductor device and manufacturing process therefor 失效
标题翻译：半导体器件及其制造工艺
公开(公告)号：US07968947B2
公开(公告)日：2011-06-28
申请号：US12086435
申请日：2006-12-26
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L27/092 , H01L21/70
CPC分类号： H01L21/823871 , H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L29/4975 , H01L29/517 , H01L29/66545
摘要： This invention provides a semiconductor device that can prevent a deviation of work function by adopting a gate electrode having a uniform composition and exhibits excellent operating characteristics by virtue of effective control of a Vth. The semiconductor device is characterized by comprising a PMOS transistor, an NMOS transistor, a gate insulating film comprising an Hf-containing insulating film with high permittivity, a line electrode comprising a silicide region (A) and a silicide region (B), one of the silicide regions (A) and (B) comprising a silicide (a) of a metal M, which serves as a diffusing species in a silicidation reaction, the other silicide region comprising a silicide layer (C) in contact with a gate insulating film, the silicide layer (C) comprising a silicide (b) of a metal M, which has a smaller atom composition ratio of the metal M than the silicide (a), and a dopant which can substantially prevent diffusion of the metal M in the silicide (b).
摘要翻译：本发明提供一种能够通过采用具有均匀组成的栅电极来防止功函偏差的半导体器件，并且由于有效的Vth控制而具有优异的工作特性。半导体器件的特征在于包括PMOS晶体管，NMOS晶体管，包括具有高介电常数的含Hf绝缘膜的栅极绝缘膜，包括硅化物区域（A）和硅化物区域（B）的线电极，硅化物区域（A）和（B）包括在硅化反应中用作扩散物质的金属M的硅化物（a），另一个硅化物区域包括与栅极绝缘膜接触的硅化物层（C）包含金属M的硅化物（b）的硅化物层（C），其具有比硅化物（a）更小的金属M的原子组成比，以及可以基本上防止金属M扩散的掺杂剂硅化物（b）。

26. 发明授权

US07883983B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07883983B2
公开(公告)日：2011-02-08
申请号：US12467519
申请日：2009-05-18
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L21/768
CPC分类号： H01L29/7843 , H01L27/0629 , H01L28/20 , H01L29/4966 , H01L29/7833
摘要： A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the first and second metal films such that the stacked film is left in a gate electrode formation region and a resistive element formation region. The method further includes: removing the second metal film in the resistive element formation region with protecting a contact hole formation region. The method further includes: forming an interlayer insulating film so as to cover the stacked film; and removing the interlayer insulating film formed in the contact hole formation region to form a contact hole leading to the second metal film.
摘要翻译：一种制造半导体器件的方法，包括：在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成第一金属膜; 在所述第一金属膜上形成第二金属膜; 以及图案化第一和第二金属膜的堆叠膜，使得堆叠的膜留在栅电极形成区域和电阻元件形成区域中。该方法还包括：通过保护接触孔形成区域来去除电阻元件形成区域中的第二金属膜。该方法还包括：形成层间绝缘膜以覆盖层叠膜; 以及去除形成在接触孔形成区域中的层间绝缘膜，以形成通向第二金属膜的接触孔。

27. 发明授权

US07776673B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07776673B2
公开(公告)日：2010-08-17
申请号：US12048482
申请日：2008-03-14
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/26513 , H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L29/4975 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： According to the present invention, it is provided a method of manufacturing a semiconductor device comprising a PMOS transistor and an NMOS transistor, wherein the method facilitates obtaining a full silicide phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.
摘要翻译：根据本发明，提供一种制造包括PMOS晶体管和NMOS晶体管的半导体器件的方法，其中该方法分别有助于获得用于NMOS晶体管和PMOS晶体管的合适组成的完全硅化物相，具有更少的掩模层和更少数量的制造步骤。

28. 发明申请

US20090221116A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20090221116A1
公开(公告)日：2009-09-03
申请号：US11990464
申请日：2006-08-29
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L21/8238 , H01L21/76 , H01L21/3205
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/28114 , H01L29/42376 , H01L29/4975 , H01L29/66507 , H01L29/66545
摘要： Element characteristics disadvantageously fluctuate because the composition of the resultant silicide varies according to the change of the gate length when a full silicide gate electrode is formed by sintering a metal/poly-Si structure. The element characteristics also fluctuate due to element-to-element non-uniformity of the resultant silicide composition. By first forming full silicide having a metal-rich composition, depositing a Si layer thereon, and sintering the combined structure, the metal in the metal-rich silicide diffuses into the Si layer, so that the Si layer is converted into silicide. The entire structure thus is converted into full silicide having a smaller metal composition ratio.
摘要翻译：元素特性不利地波动，因为当通过烧结金属/多晶硅结构形成全硅化物栅电极时，所得硅化物的组成根据栅极长度的变化而变化。由于所得硅化物组合物的元素对元素的不均匀性，元素特性也波动。通过首先形成具有富金属组成的全硅化物，在其上沉积Si层并烧结组合结构，富金属硅化物中的金属扩散到Si层中，使得Si层转化为硅化物。因此，整个结构转变成具有较小金属组成比的完全硅化物。

29. 发明授权

US07567014B2 Energy trap piezoelectric resonator 有权
标题翻译：能量陷阱压电谐振器
公开(公告)号：US07567014B2
公开(公告)日：2009-07-28
申请号：US10559240
申请日：2005-04-20
申请人： Hitoshi Sakaguchi , Hiroaki Kaida , Takashi Hase
发明人： Hitoshi Sakaguchi , Hiroaki Kaida , Takashi Hase
IPC分类号： H01L41/047
CPC分类号： H03H9/0207 , H03H9/177
摘要： An energy trap piezoelectric resonator makes use of a harmonic wave in a thickness longitudinal vibration mode and can effectively suppress a spurious fundamental wave in a thickness longitudinal vibration mode without significantly suppressing the harmonic wave that is used for the resonator. The energy trap piezoelectric resonator has a first excitation electrode disposed at an upper surface of a piezoelectric substrate polarized in a thickness direction and a second excitation electrode disposed at a lower surface, and a floating electrode disposed at at least one of the upper surface and/or the lower surface of the piezoelectric substrate so as to extend towards and away from the first excitation electrode with respect to a node of an electric potential distribution based on electric charges generated by the fundamental wave that is propagated when an energy trap vibration portion where the excitation electrodes oppose each other is excited.
摘要翻译：能量阱压电谐振器利用厚度纵向振动模式的谐波，并且可以有效地抑制厚度纵向振动模式中的杂波基波，而不会显着地抑制用于谐振器的谐波。能量阱压电谐振器具有设置在厚度方向偏振的压电基板的上表面的第一激励电极和设置在下表面的第二激励电极，以及设置在上表面和/ 或者压电基板的下表面相对于基于由基波产生的电荷而相对于电位分布的节点朝向和远离第一激励电极延伸，当基本波产生的电荷是在能量陷阱振动部分激发电极彼此相对激发。

30. 发明授权

US07446454B2 Thickness extensional piezoelectric resonator 有权
标题翻译：厚度拉伸压电谐振器
公开(公告)号：US07446454B2
公开(公告)日：2008-11-04
申请号：US11605412
申请日：2006-11-29
申请人： Hiroaki Kaida , Hitoshi Sakaguchi , Takashi Hase , Jiro Inoue
发明人： Hiroaki Kaida , Hitoshi Sakaguchi , Takashi Hase , Jiro Inoue
IPC分类号： H01L41/08
CPC分类号： H03H9/177 , H03H9/02102
摘要： An energy-trapping-type thickness extensional piezoelectric resonator using a thickness extensional vibration mode having first and second resonance electrodes formed on portions of the top surface and the bottom surface of a piezoelectric substrate that is polarized in the thickness direction thereof, respectively, in which a portion where the first and second resonance electrodes oppose each other is formed as an energy-trapping-type vibration section, wherein, in order to suppress frequency changes of the thickness extensional vibration mode due to temperature, which is a main response using resonance characteristics, a suppression response having a frequency-temperature-change tendency for suppressing frequency changes of the main response due to temperature is brought into close proximity with the main response.
摘要翻译：一种使用厚度延伸振动模式的能量捕获型厚度延伸压电谐振器，其具有分别在其厚度方向上被偏振的压电基板的顶表面和底表面的部分上形成的第一和第二谐振电极，其中，第一和第二谐振电极彼此相对的部分形成为能量捕获型振动部分，其中为了抑制作为使用谐振特性的主要响应的温度引起的厚度延伸振动模式的频率变化具有用于抑制由于温度导致的主响应的频率变化的频率 - 温度变化趋势的抑制响应与主要响应紧密相关。

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