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21. 发明授权

US07608859B2 Semiconductor light-emitting device with transparent conductive film 失效
标题翻译：具有透明导电膜的半导体发光器件
公开(公告)号：US07608859B2
公开(公告)日：2009-10-27
申请号：US11485316
申请日：2006-07-13
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.
摘要翻译：具有透明导电膜的半导体发光器件具有形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的As基接触层，所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层，所述电流扩散层由由金属氧化物材料制成的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间的缓冲层。缓冲层具有两个以上的缓冲层部分，相邻的缓冲层部分在材料或组成上彼此不同。

22. 发明申请

US20080083919A1 LIGHT EMITTING DIODE 失效
标题翻译：发光二极管
公开(公告)号：US20080083919A1
公开(公告)日：2008-04-10
申请号：US11848709
申请日：2007-08-31
申请人： Ken TAKAHASHI , Taichiroo Konno , Masahiro Arai
发明人： Ken TAKAHASHI , Taichiroo Konno , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/025 , H01L33/10 , H01L33/30 , H01L33/40
摘要： On a GaAs substrate 1, a light emitting part 4, an intermediate layer 5 of AlGaInP and a current spreading layer 6 are sequentially formed. The light emitting part 4 includes a first conductivity type AlGaInP based lower cladding layer 41, an AlGaInP based light emitting layer 42, and a second conductivity type AlGaInP based upper cladding layer 43 sequentially formed on the GaAs substrate 1. In each layer of the light emitting part 4, a hydrogen concentration is not more than 2×1017 cm−3, a carbon concentration is not more than 2×1016 cm−3, and an oxygen concentration is not more than 2×1016 cm−3. In a partial region or in a total region of the current-spreading layer 6, a hydrogen concentration is not more than 5×1017 cm−3, a carbon concentration is not more than 5×1017 cm−3, and an oxygen concentration is not more than 2×1016 cm−3.
摘要翻译：在GaAs衬底1上，依次形成发光部分4，AlGaInP的中间层5和电流扩散层6。发光部分4包括依次形成在GaAs衬底1上的第一导电型AlGaInP基下包层41，AlGaInP基发光层42和第二导电型AlGaInP基上包层43。在发光部分4的每个层中，氢浓度不超过2×10 17 cm -3，碳浓度不超过2×10 16， -3 O 3，氧浓度不大于2×10 16 cm -3。在电流扩散层6的局部区域或总区域中，氢浓度不大于5×10 17 cm -3，碳浓度不大超过5×10 17 cm -3，氧浓度不超过2×10 16 cm -3。

23. 发明授权

US07230281B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07230281B2
公开(公告)日：2007-06-12
申请号：US11165568
申请日：2005-06-24
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III–V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
摘要翻译：半导体发光器件具有：半导体衬底; 具有n型包覆层，有源层，p型覆层和p型接触层的半导体层，其中p型接触层由基于As的材料制成，位于半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3％以内的晶格失配比的III-V族半导体制成。

24. 发明申请

US20070075321A1 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US20070075321A1
公开(公告)日：2007-04-05
申请号：US11497379
申请日：2006-08-02
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P(phosphorus) as a main component thereof.
摘要翻译：一种半导体发光器件，具有：形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的基于As的接触层，所述接触层掺杂有1×10 19 / cm 3以上的p型掺杂物; 形成在所述接触层上的电流扩展层，所述电流扩展层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。缓冲层为未掺杂的III / V族III族半导体，III / V族半导体为具有P（磷）作为主要成分的V族元素。

25. 发明申请

US20070023768A1 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US20070023768A1
公开(公告)日：2007-02-01
申请号：US11285388
申请日：2005-11-23
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/04 , H01L33/32
摘要： A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.
摘要翻译：半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层，未掺杂的有源层，第二导电型覆盖层和第二导电型电流扩展层。第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层，该部分不与有源层接触。第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

26. 发明授权

US09236252B2 Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template 有权
标题翻译：金属氯化物气体发生器，氢化物气相外延生长装置和氮化物半导体模板
公开(公告)号：US09236252B2
公开(公告)日：2016-01-12
申请号：US13569983
申请日：2012-08-08
申请人： Taichiroo Konno , Hajime Fujikura , Michiko Matsuda
发明人： Taichiroo Konno , Hajime Fujikura , Michiko Matsuda
IPC分类号： C30B25/08 , H01L21/02 , C30B25/14 , C30B29/40
CPC分类号： H01L21/0262 , C30B25/08 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/02576 , H01L21/02581 , H01L29/045 , H01L29/2003 , H01L29/207 , H01L29/36
摘要： A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.
摘要翻译：金属氯化物气体发生器包括：管式反应器，包括用于在上游侧接收金属的接收部分和生长基底放置在下游侧的生长部分; 气体入口管，其布置成从具有通过接收部的气体入口的上游端延伸到生长部分，用于从上游端引入气体以将气体供应到接收部分，并且供应由接收部分中的气体和金属与生长部分之间的反应; 以及放置在反应器中以将上游端与生长部分进行热屏蔽的隔热板。进气管在上游端和隔热板之间弯曲。

27. 发明授权

US09105755B2 Method of manufacturing a nitride semiconductor epitaxial substrate 有权
标题翻译：制造氮化物半导体外延基板的方法
公开(公告)号：US09105755B2
公开(公告)日：2015-08-11
申请号：US13524300
申请日：2012-06-15
申请人： Hajime Fujikura , Taichiroo Konno , Michiko Matsuda
发明人： Hajime Fujikura , Taichiroo Konno , Michiko Matsuda
IPC分类号： H01L21/02 , H01L29/872 , H01L29/66 , H01L33/00 , H01L33/12 , H01L33/32 , H01L29/20
CPC分类号： H01L29/872 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L33/007 , H01L33/12 , H01L33/32
摘要： There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
摘要翻译：提供了具有C面作为表面的III族氮化物半导体层的氮化物半导体外延衬底，其经由包含Al的III族氮化物半导体的缓冲层在衬底上生长，其中缓冲层在其上具有反转畴表面。

28. 发明授权

US08212268B2 Epitaxial wafer, light-emitting element, method of fabricating epitaxial wafer and method of fabricating light-emitting element 有权
标题翻译：外延晶片，发光元件，外延晶片的制造方法和制造发光元件的方法
公开(公告)号：US08212268B2
公开(公告)日：2012-07-03
申请号：US12692754
申请日：2010-01-25
申请人： Taichiroo Konno
发明人： Taichiroo Konno
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/22
摘要： An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided. The epitaxial wafer is formed with a light-emitting portion, a reflective portion provided between a semiconductor substrate and the light-emitting portion and a current dispersing layer having first and second current dispersing layers, wherein the reflective portion has plural pairs of layers having first and second semiconductor layers wherein the first semiconductor layer has a thickness of TA defined by Equation (1), T A = λ p 4 ⁢ n A ⁢ 1 - ( n I ⁢ n ⁢ sin ⁢ ⁢ θ n A ) 2 ( 1 ) the second semiconductor layer has a thickness of TB defined by Equation (2), T B = λ p 4 ⁢ n B ⁢ 1 - ( n I ⁢ n ⁢ sin ⁢ ⁢ θ n B ) 2 ( 2 ) and the second current dispersing layer has a high carrier density or a high impurity density and is provided with the convexoconcave portion on the surface.
摘要翻译：提供外延晶片，发光元件，制造外延晶片的方法和制造发光元件的方法，其具有高输出和低正向电压，并且可以在不增加制造成本的情况下制造。。外延晶片形成有发光部分，设置在半导体基板和发光部分之间的反射部分和具有第一和第二电流分散层的电流分散层，其中反射部分具有多对具有第一和第二半导体层，其中第一半导体层具有由等式（1）定义的TA的厚度，TA =λp 4 n A 1 - （n I n sinüt; thetas; n A）2（1）第二半导体层具有由公式（2）定义的TB的厚度，TB =λp 4 n B 1 - （n I n sinüt; thetas; n B）2（2）和第二电流分散层具有高载流子密度或高杂质浓度，并且在表面上设置凸凹部。

29. 发明授权

US08120050B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08120050B2
公开(公告)日：2012-02-21
申请号：US12585494
申请日：2009-09-16
申请人： Taichiroo Konno , Takehiko Tani
发明人： Taichiroo Konno , Takehiko Tani
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.
摘要翻译：发光元件包括半导体衬底，在半导体衬底上包括有源层的发光层部分，在半导体衬底和有源层之间的第一反射层，用于反射从有源层发射的光; 以及在所述半导体衬底和所述第一反射层之间的第二反射层，用于反射与由所述第一反射层反射的光的波长不同的波长的光。第二反射层反射的波长比由第一反射层反射的光的波长长。

30. 发明申请

US20100252849A1 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US20100252849A1
公开(公告)日：2010-10-07
申请号：US12585494
申请日：2009-09-16
申请人： Taichiroo Konno , Takehiko Tani
发明人： Taichiroo Konno , Takehiko Tani
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.
摘要翻译：发光元件包括半导体衬底，在半导体衬底上包括有源层的发光层部分，在半导体衬底和有源层之间的第一反射层，用于反射从有源层发射的光; 以及在所述半导体衬底和所述第一反射层之间的第二反射层，用于反射与由所述第一反射层反射的光的波长不同的波长的光。第二反射层反射的波长比由第一反射层反射的光的波长长。

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