专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070231225A1 APPARATUS AND REACTOR FOR GENERATING AND FEEDING HIGH PURITY MOISTURE 审中-公开
标题翻译：用于产生和输送高纯度水分的装置和反应器
公开(公告)号：US20070231225A1
公开(公告)日：2007-10-04
申请号：US11760330
申请日：2007-06-08
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Yukio Minami , Kouji Kawada , Katunori Komehana , Teruo Honiden , Touru Hirai , Akihiro Morimoto , Toshirou Nariai , Keiji Hirao , Masaharu Taguchi , Osamu Nakamura
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Yukio Minami , Kouji Kawada , Katunori Komehana , Teruo Honiden , Touru Hirai , Akihiro Morimoto , Toshirou Nariai , Keiji Hirao , Masaharu Taguchi , Osamu Nakamura
IPC分类号： B01J23/40
CPC分类号： B01J3/006 , B01J7/00 , B01J12/007 , C01B5/00
摘要： A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.
摘要翻译：一种用于从氢气和氧气产生水蒸汽并将高纯度水分提供给诸如半导体生产的过程的安全的减压装置。该设备通过保持催化反应器的内部压力以消除气体点燃的可能性，以产生高水平的水分，同时在减压下从反应器中提供湿气。散热反应器的改进通过有效冷却反应器耐氧化铝处理的翅片而大大地增加了水分产生而不会扩大尺寸。

22. 发明授权

US07258845B2 Apparatus and reactor for generating and feeding high purity moisture 有权
标题翻译：用于产生和提供高纯度水分的装置和反应器
公开(公告)号：US07258845B2
公开(公告)日：2007-08-21
申请号：US09773605
申请日：2001-02-02
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Yukio Minami , Kouji Kawada , Katunori Komehana , Teruo Honiden , Touru Hirai , Akihiro Morimoto , Toshirou Nariai , Keiji Hirao , Masaharu Taguchi , Osamu Nakamura
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Yukio Minami , Kouji Kawada , Katunori Komehana , Teruo Honiden , Touru Hirai , Akihiro Morimoto , Toshirou Nariai , Keiji Hirao , Masaharu Taguchi , Osamu Nakamura
IPC分类号： B01J8/02 , C01B5/00
CPC分类号： B01J3/006 , B01J7/00 , B01J12/007 , C01B5/00
摘要： A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.
摘要翻译：一种用于从氢气和氧气产生水蒸汽并将高纯度水分提供给诸如半导体生产的过程的安全的减压装置。该设备通过保持催化反应器的内部压力以消除气体点燃的可能性，以产生高水平的水分，同时在减压下从反应器中提供湿气。散热反应器的改进通过有效冷却反应器耐氧化铝处理的翅片而大大地增加了水分产生而不会扩大尺寸。

23. 发明申请

US20060215409A1 Visible light-reflecting member 失效
标题翻译：可见光反射部件
公开(公告)号：US20060215409A1
公开(公告)日：2006-09-28
申请号：US10547693
申请日：2004-02-27
申请人： Tadahiro Ohmi , Akihiro Morimoto , Naoki Tanahashi
发明人： Tadahiro Ohmi , Akihiro Morimoto , Naoki Tanahashi
IPC分类号： F21V7/00
CPC分类号： C23C14/345 , C23C14/205 , C23C28/322 , C23C28/345 , C23C30/00 , G02B5/08 , G02F1/133553
摘要： A visible light-reflecting member is disclosed which uses a plate or a film for reflecting visible lights, whose reflective surface is provided with an aluminum thin film having an aluminum purity of not less than 99 mass % and an X-ray diffraction pattern wherein, among peak intensities ascribed to aluminum, the peak intensity ascribed to the (111) plane is higher than the total of the other peak intensities.
摘要翻译：公开了一种可见光反射构件，其使用用于反射可见光的板或膜，其反射表面设置有铝质量不小于99质量％的铝薄膜和X射线衍射图，在归因于铝的峰强度中，归因于（111）面的峰强度高于其他峰强度的总和。

24. 发明申请

US20060175573A1 Diaphragm valve for the vacuum evacuation system 有权
标题翻译：隔膜阀用于真空抽气系统
公开(公告)号：US20060175573A1
公开(公告)日：2006-08-10
申请号：US10546032
申请日：2004-02-09
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamajl , Masafumi Kitano , Akihiro Morimoto
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamajl , Masafumi Kitano , Akihiro Morimoto
IPC分类号： F16K1/00
CPC分类号： F16K7/16 , F16K51/02
摘要： A diaphragm valve 1 is provided with a body 2 having a flow-in passage 6, a flow-out passage 7, and a valve seat 8 formed between the passages; a diaphragm 3 installed in the body 2 and permitted to rest on and move away from the valve seat 8; and a driving means 4 installed on the body 2 to allow the diaphragm 3 to rest on and move away from the valve seat 8, wherein synthetic resin films 5 of predetermined thickness are coated on fluid-contacting parts 25 of the afore-mentioned body 2 and diaphragm 3. A diaphragm valve in accordance with the present invention prevents corrosion of the valve members caused by accumulation and adherence of substances produced by thermal decomposition, and prevents clogging caused by substances produced, and prevents seat leakage when applied in the vacuum exhaust system of a semiconductor manufacturing facility.
摘要翻译：隔膜阀1设置有主体2，主体2具有形成在通道之间的流入通道6，流出通道7和阀座8; 隔膜3安装在主体2中并允许搁置在阀座8上并远离阀座8; 以及安装在主体2上的驱动装置4，以允许隔膜3搁置在阀座8上并远离阀座8，其中预定厚度的合成树脂膜5涂覆在上述主体2的流体接触部分25上和隔膜3.根据本发明的隔膜阀防止由热分解产生的物质的积聚和粘附引起的阀构件的腐蚀，并且防止由所产生的物质引起的堵塞，并且当应用于真空排气系统时防止阀座泄漏的半导体制造设施。

25. 发明授权

US06815720B2 Substrate having buried structure, display device including the substrate, method of making the substrate and method for fabricating the display device 有权
标题翻译：具有掩埋结构的衬底，包括衬底的显示装置，制造衬底的方法以及用于制造显示装置的方法
公开(公告)号：US06815720B2
公开(公告)日：2004-11-09
申请号：US10227121
申请日：2002-08-23
申请人： Kazuki Kobayashi , Kimiaki Fujino , Ikuo Sakono , Tadahiro Ohmi , Shigetoshi Sugawa , Akihiro Morimoto
发明人： Kazuki Kobayashi , Kimiaki Fujino , Ikuo Sakono , Tadahiro Ohmi , Shigetoshi Sugawa , Akihiro Morimoto
IPC分类号： H01L29786
CPC分类号： G02F1/136286 , G02F1/136213 , H01L29/41733 , H01L29/78633
摘要： A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.
摘要翻译：制造具有掩埋结构的基板的方法包括以下步骤：制备具有主表面的玻璃基板，通过湿蚀刻工艺在玻璃基板的主表面上形成凹槽，并且在第一材料的主表面上沉积第一材料玻璃基板并用第一材料填充凹槽，以形成具有与主表面基本齐平的表面的掩埋结构。形成凹槽的步骤包括通过使用包括氢氟酸，氟化铵和盐酸或草酸的蚀刻剂进行湿蚀刻工艺的步骤。

26. 发明授权

US06733732B2 Reactor for generating moisture 有权
标题翻译：反应器产生水分
公开(公告)号：US06733732B2
公开(公告)日：2004-05-11
申请号：US09783287
申请日：2001-02-15
申请人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Takahisa Nitta , Nobukazu Ikeda , Akihiro Morimoto , Keiji Hirao , Hiroshi Morokoshi , Yukio Minami
发明人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Takahisa Nitta , Nobukazu Ikeda , Akihiro Morimoto , Keiji Hirao , Hiroshi Morokoshi , Yukio Minami
IPC分类号： B01J802
CPC分类号： C01B5/00
摘要： A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.
摘要翻译：一种反应器，包括由耐热材料制成并具有用于水/湿气的入口和出口的本体，其具有设置在所述主体的内部空间中的气体扩散构件，并且在内壁表面上具有铂涂层的身体。从入口供给的氢气和氧气被气体扩散构件扩散，然后与铂涂层接触以提高反应性，从而产生水。反应器的温度保持在低于氢气或含氢气体的点火温度。反应器主体内壁上的铂涂层催化剂层是通过处理体内表面，清洁处理过的表面，在壁表面上形成氧化物或氮化物的非金属材料的阻挡涂层形成的，并在阻挡涂层上形成铂涂层。

27. 发明授权

US06408879B1 Fluid control device 失效
公开(公告)号：US06408879B1
公开(公告)日：2002-06-25
申请号：US09127817
申请日：1998-08-03
申请人： Tadahiro Ohmi , Yukio Minami , Akihiro Morimoto , Nobukazu Ikeda , Keiji Hirao , Takashi Hirose , Michio Yamaji , Kazuhiro Yoshikawa
发明人： Tadahiro Ohmi , Yukio Minami , Akihiro Morimoto , Nobukazu Ikeda , Keiji Hirao , Takashi Hirose , Michio Yamaji , Kazuhiro Yoshikawa
IPC分类号： F16K1100
CPC分类号： F16K27/003 , Y10T137/87684
摘要： A fluid control device comprises a first passageway, and a second passageway communicating therewith and having a terminating end closed with a fluid control unit or instrument. The first passageway is adapted to pass a fluid therethrough with a different fluid remaining in the second passageway. The first passageway comprises an upstream portion and a downstream portion communicating with the upstream portion at an approximate right angle therewith. The second passageway extends from a terminating end of the upstream portion of the first passageway in alignment with the upstream portion.

28. 发明授权

US06180067B2 Reactor for the generation of water 失效
标题翻译：反应堆生成水
公开(公告)号：US06180067B2
公开(公告)日：2001-01-30
申请号：US09160188
申请日：1998-09-25
申请人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami
发明人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami
IPC分类号： B01J1500
CPC分类号： B01J12/007 , C01B5/00
摘要： An improved reactor for generating water from hydrogen and oxygen which allows production of moisture at a high conversion rate exceeding 99 percent with the temperature kept under some 400° C. inside the reactor shell (1) and with the water vapor production being more than 1,000 sccm. One form of the reactor (FIG. 1) according to the invention is constructed with a closed cylinder divided into two compartments by an interior partition, a first reactor structural component (2) and a second reactor structural component (3), united to define a sealed interior space (1a). The sealed interior space (1a) of the reactor shell (1) is partitioned by a diffusion filter (10) into a first chamber (1b) provided with an inlet reflector unit (9) and a second chamber (1c) provided with an outlet reflector-diffuser unit (11). On the inside surface of the second reactor structural component (1c) is formed a platinum coated catalyst layer (13). The inlet reflector unit (9) comprises a cylindrical casing (9a) mounted over a starting material gas feed port (2c) on the inside surface of the first reactor structural component (2), side openings (9c) formed in the casing (9a) and a reflector (9b) closing the open end of the casing (9a). The outlet reflector-diffuser unit (11) has a cylindrical casing (11a) fixed over a water vapor gas outlet port (3c) on the inside surface of the second reactor structural component (3), side openings (11e) formed in the casing, a reflector (11b) closing the open end of the casing (11a), an outlet diffusion filter (11c) provided inside the casing (11a) and a platinum coated catalyst layer (11d) formed on the outlet diffusion filter (11c).
摘要翻译：一种用于从氢气和氧气产生水的改进的反应器，其允许在反应器壳（1）内保持在约400℃的温度下以高转化率生产超过99％的水分，并且水蒸汽产生量大于1,000 sccm。根据本发明的反应器（图1）的一种形式被构造成具有通过内部分隔件分成两个隔间的封闭圆筒，第一反应器结构部件（2）和第二反应器结构部件（3），所述第一反应器结构部件（2）和第二反应器结构部件密封的内部空间（1a）。反应器壳体（1）的密封内部空间（1a）被扩散过滤器（10）分隔成具有入口反射器单元（9）的第一室（1b）和设置有出口反射器 - 扩散器单元（11）。在第二反应器结构部件（1c）的内表面上形成有镀铂催化剂层（13）。入口反射器单元（9）包括安装在第一反应器结构部件（2）的内表面上的原料气体供给口（2c）上的圆柱形壳体（9a），形成在壳体（9a）中的侧开口（9c））和闭合壳体（9a）的开口端的反射器（9b）。出口反射器 - 扩散器单元（11）具有固定在第二反应器结构部件（3）的内表面上的水蒸汽气体出口（3c）上的圆筒形壳体（11a），形成在壳体中的侧开口（11e），封闭壳体（11a）的开口端的反射器（11b），设置在壳体（11a）内部的出口扩散过滤器（11c）和形成在出口扩散过滤器（11c）上的镀铂催化剂层（11d）意大利

29. 发明授权

US5816285A Pressure type flow rate control apparatus 失效
标题翻译：压力式流量控制装置
公开(公告)号：US5816285A
公开(公告)日：1998-10-06
申请号：US907951
申请日：1997-08-11
申请人： Tadahiro Ohmi , Koji Nishino , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami , Koji Kawada , Ryosuke Dohi , Hiroyuki Fukuda
发明人： Tadahiro Ohmi , Koji Nishino , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami , Koji Kawada , Ryosuke Dohi , Hiroyuki Fukuda
IPC分类号： G05D7/06 , G05D16/20 , F16K31/12
CPC分类号： G05D7/0635 , Y10T137/7759 , Y10T137/7761
摘要： A pressure type flow rate control apparatus (1) controls flow rate of a fluid in an environment where a ratio of P2/P1 between an absolute pressure P1 at an upstream side of an orifice and an absolute pressure P2 at a downstream side of the orifice is maintained at a value less than about 0.7. The apparatus comprises: a plate for forming the orifice (5); a control valve (2) positioned upstream of the orifice; an orifice corresponding valve (9) positioned downstream of the orifice (5); a primary pressure detector (3) positioned between the control valve (2) and the orifice (5); a secondary pressure detector (11) positioned downstream of the orifice (5); a calculation control device (6) for calculating flow rate Qc on the basis of the measured pressure P1 of the primary pressure detector (3) by a formula Qc=KP1 (K being a constant) and for outputting as a control signal Qy a difference between a flow rate command signal Qs and the calculated flow rate signal Qc to a drive unit (14) of the control valve 2; and a pressure comparing, calculating apparatus (10) for calculating the ratio of P2/P1 between the detected pressure P1 of the primary pressure detector (3) and the detected pressure P2 of the secondary pressure detector (11). The pressure P1 upstream of the orifice is adjusted by opening and closing the control valve by the control signal Qy, thereby controlling the flow rate downstream of the orifice.
摘要翻译：压力式流量控制装置（1）控制在孔口上游侧的绝对压力P1和孔口下游侧的绝对压力P2之间的P2 / P1的比例的环境中的流体流量保持在小于约0.7的值。该装置包括：用于形成孔口（5）的板; 位于孔口上游的控制阀（2）; 位于孔口（5）下游的孔对应阀（9）; 位于控制阀（2）和孔（5）之间的主要压力检测器（3）; 位于孔口（5）下游的二次压力检测器（11）; 计算控制装置（6），用于通过公式Qc = KP1（K为常数）计算基于所测量的主压力检测器（3）的压力P1的流量Qc，并且作为控制信号Qy输出差在流量指令信号Qs和计算出的流量信号Qc之间，与控制阀2的驱动单元（14）之间; 以及压力比较计算装置（10），用于计算一次压力检测器（3）的检测压力P1与二次压力检测器（11）的检测压力P2之间的P2 / P1的比。通过控制信号Qy打开和关闭控制阀来调节孔口上游的压力P1，从而控制孔口下游的流速。

30. 发明授权

US08227912B2 Semiconductor device with Cu metal-base and manufacturing method thereof 失效
标题翻译：具有Cu金属基的半导体器件及其制造方法
公开(公告)号：US08227912B2
公开(公告)日：2012-07-24
申请号：US11664279
申请日：2004-10-10
申请人： Tadahiro Ohmi , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01L23/36
CPC分类号： H01L29/7813 , H01L21/84 , H01L27/12 , H01L29/045 , H01L29/41741 , H01L29/456 , H01L29/66734 , H01L29/732 , H01L29/7397 , H01L29/74 , H01L29/744 , H01L29/78603 , H01L2924/0002 , H05K1/053 , H01L2924/00
摘要： As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
摘要翻译：作为半导体装置的基板，使用金属基板，金属基板由第一金属制的金属基体和由覆盖金属基体的第二金属构成的连接金属层构成。基板具有其中在连接金属层上设置防止第一金属扩散的扩散防止层的结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式