专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20090031955A1 VACUUM CHUCKING HEATER OF AXISYMMETRICAL AND UNIFORM THERMAL PROFILE 审中-公开
标题翻译：轴对称和均匀热轮廓的真空开关加热器
公开(公告)号：US20090031955A1
公开(公告)日：2009-02-05
申请号：US11830589
申请日：2007-07-30
申请人： Siqing Lu , Balaji Chandrasekaran , Paul Edward Gee , Nitin K. Ingle , Dmitry Lubomirsky , Zheng Yuan , Ellie Y. Yieh
发明人： Siqing Lu , Balaji Chandrasekaran , Paul Edward Gee , Nitin K. Ingle , Dmitry Lubomirsky , Zheng Yuan , Ellie Y. Yieh
IPC分类号： C23C16/00 , B23B31/30
CPC分类号： C23C16/4586 , C23C16/4584 , Y10T279/11
摘要： Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves.
摘要翻译：具有轴对称和/或更均匀的热分布的真空吸盘的实施例在此提供。在一些实施例中，真空卡盘包括具有用于支撑基板的支撑表面的主体; 形成在支撑表面中的多个轴对称布置的槽，至少一些槽相交; 以及在所述槽内形成的多个夹持孔，所述夹持孔用于在操作期间将所述槽流体耦合到真空源，其中所述夹紧孔设置在所述槽的非交叉部分中。

22. 发明授权

US07234079B2 Method and system for enabling recovery of data stored in a computer network; a method and a system for recovering data stored in a computer network 失效
标题翻译：用于恢复存储在计算机网络中的数据的方法和系统; 用于恢复存储在计算机网络中的数据的方法和系统
公开(公告)号：US07234079B2
公开(公告)日：2007-06-19
申请号：US10618170
申请日：2003-07-11
申请人： Heng Seng Cheng , Lek Heng Ngoh , Zheng Yuan
发明人： Heng Seng Cheng , Lek Heng Ngoh , Zheng Yuan
IPC分类号： G06F11/00
CPC分类号： H04L1/0041 , G06F11/2007 , H04L1/0045 , H04L1/0072 , H04L2001/0095
摘要： A method for enabling recovery of data stored in a computer network, the computer network comprises a plurality of computer nodes, the method comprising the steps of generating a set of redundancy data based on a predetermined relationship between a first set of data and a second set of data, injecting the first set of data, the second set of data and the set of redundancy data into separate looping paths of the computer network, wherein a looping path is a path along a plurality of computer nodes in which data is transported, and the looping paths are defined in separate communication channels between the computer nodes and pass through at least one common node of the computer network, such that the redundancy data and the second set of data can be used to reconstruct the first set of data based on the predetermined relationship between the first and second set of data when the first set of data is lost, thereby enabling the recovery of data stored in the computer network.
摘要翻译：一种能够恢复存储在计算机网络中的数据的方法，所述计算机网络包括多个计算机节点，所述方法包括以下步骤：基于第一组数据和第二组之间的预定关系生成一组冗余数据将第一组数据，第二组数据和冗余数据集合注入到计算机网络的分离的循环路径中，其中循环路径是沿数据传送的多个计算机节点的路径，以及循环路径在计算机节点之间的分开的通信信道中定义并且通过计算机网络的至少一个公共节点，使得冗余数据和第二组数据可以用于基于当第一组数据丢失时，第一组数据和第二组数据之间的预定关系，从而能够恢复存储在计算机网络中的数据。

23. 发明授权

US07087497B2 Low-thermal-budget gapfill process 有权
标题翻译：低热量预算的填隙过程
公开(公告)号：US07087497B2
公开(公告)日：2006-08-08
申请号：US10793559
申请日：2004-03-04
申请人： Zheng Yuan , Reza Arghavani , Ellie Y Yieh , Shankar Venkataraman
发明人： Zheng Yuan , Reza Arghavani , Ellie Y Yieh , Shankar Venkataraman
IPC分类号： H01L21/336
CPC分类号： H01L21/76224 , C23C16/403 , C23C16/45536 , C23C16/45544 , H01J37/32009 , H01L21/02178 , H01L21/0228 , H01L21/32055 , H01L21/67017 , H01L21/6719 , H01L21/763
摘要： A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.
摘要翻译：提供了一种低热预算的间隙填充方法，用于填充在应变硅衬底上形成的两个相邻隆起特征之间的间隙，作为浅沟槽隔离工艺的一部分。使用原子层沉积沉积电绝缘衬垫，并且将多晶硅沉积在电绝缘衬垫上，其中两个阶段在低于700℃的温度下进行。

24. 发明申请

US20060030165A1 Multi-step anneal of thin films for film densification and improved gap-fill 有权
标题翻译：用于膜致密化和改善间隙填充的薄膜的多步退火
公开(公告)号：US20060030165A1
公开(公告)日：2006-02-09
申请号：US10990002
申请日：2004-11-16
申请人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
发明人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/02164 , H01L21/02271 , H01L21/02337 , H01L21/31612 , H01L21/31662 , H01L21/67115 , H01L21/76224 , H01L21/76283
摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
摘要翻译：一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底，含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

25. 发明授权

US06465044B1 Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone 失效
标题翻译：使用具有臭氧的烷基硅氧烷低聚物的氧化硅膜的化学气相沉积
公开(公告)号：US06465044B1
公开(公告)日：2002-10-15
申请号：US09542612
申请日：2000-04-04
申请人： Sanjeev Jain , Zheng Yuan
发明人： Sanjeev Jain , Zheng Yuan
IPC分类号： C23C1600
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02216 , H01L21/02271 , H01L21/31612
摘要： This invention relates to a method of depositing silicon oxide films on the surface of semiconductor substrates, and more particularly to depositing such films by chemical vapor deposition using alkylsiloxane oligomers precursors with ozone.
摘要翻译：本发明涉及一种在半导体衬底的表面上沉积氧化硅膜的方法，更具体地说，涉及通过使用具有臭氧的烷基硅氧烷低聚物前体的化学气相沉积来沉积这种膜。

26. 发明授权

US09171578B2 Video skimming methods and systems 有权
标题翻译：视频剪辑方法和系统
公开(公告)号：US09171578B2
公开(公告)日：2015-10-27
申请号：US13103810
申请日：2011-05-09
申请人： Taoran Lu , Zheng Yuan , Yu Huang , Dapeng Oliver Wu , Hong Heather Yu
发明人： Taoran Lu , Zheng Yuan , Yu Huang , Dapeng Oliver Wu , Hong Heather Yu
IPC分类号： G06K9/62 , G11B27/034 , G11B27/28
CPC分类号： G11B27/031 , G06K9/00751 , G11B27/034 , G11B27/28
摘要： In an embodiment, a method of creating a skimming preview of a video includes electronically receiving a plurality of video shots, analyzing each frame in a video shot from the plurality of video shots, where analyzing includes determining a saliency of each frame of the video shot. The method also includes determining a key frame of the video shot based on the saliency of each frame the video shot, extracting visual features from the key frame, performing shot clustering of the plurality of video shots to determine concept patterns based on the visual features, and generating a reconstruction reference tree based on the shot clustering. The reconstruction reference tree includes video shots categorized according to each concept pattern.
摘要翻译：在一个实施例中，创建视频的撇取预览的方法包括电子地接收多个视频镜头，分析来自多个视频镜头的视频拍摄中的每个帧，其中分析包括确定视频拍摄的每个帧的显着性。该方法还包括基于视频拍摄的每帧的显着性来确定视频镜头的关键帧，从关键帧提取视觉特征，执行多个视频镜头的拍摄聚类，以基于视觉特征来确定概念模式，以及基于所述拍摄聚类生成重建参考树。重建参考树包括根据每个概念模式分类的视频镜头。

27. 发明授权

US08621352B2 Virtual meeting video sharing 有权
标题翻译：虚拟会议视频分享
公开(公告)号：US08621352B2
公开(公告)日：2013-12-31
申请号：US13155536
申请日：2011-06-08
申请人： Jianzhong Ding , Haitao Xin , Zheng Yuan , Guangbing Liu , Hailei Sheng
发明人： Jianzhong Ding , Haitao Xin , Zheng Yuan , Guangbing Liu , Hailei Sheng
IPC分类号： G06F15/16 , G06F3/00
CPC分类号： H04L65/403 , G06F3/1454 , G06F3/1462 , H04L12/1827 , H04L51/18 , H04L65/1069 , H04L65/4015 , H04L65/4023 , H04N7/157
摘要： A method is provided in one particular example that includes identifying an attempt by a first communications device to play video data within a virtual meeting session using a first media player. The first communications device can be sharing at least a portion of a desktop presented on the first communications device with one or more other remote communications devices participating in the virtual meeting session. The method can also include identifying a copy of the video data, and launching one or more media players to present at least a portion of the copy of the video data on the one or more other remote communications devices. The one or more media players are launched to correspond to a location of the first media player on the shared portion of the desktop.
摘要翻译：在一个特定示例中提供了一种方法，其包括识别第一通信设备尝试使用第一媒体播放器在虚拟会议会话内播放视频数据。第一通信设备可以与参与虚拟会话会话的一个或多个其他远程通信设备共享在第一通信设备上呈现的桌面的至少一部分。该方法还可以包括识别视频数据的副本，以及启动一个或多个媒体播放器以在一个或多个其他远程通信设备上呈现视频数据的副本的至少一部分。启动一个或多个媒体播放器以对应于桌面的共享部分上的第一媒体播放器的位置。

28. 发明授权

US08571189B2 Efficient transmission of audio and non-audio portions of a communication session for phones 有权
标题翻译：有效传输电话通信会话的音频和非音频部分
公开(公告)号：US08571189B2
公开(公告)日：2013-10-29
申请号：US12683079
申请日：2010-01-06
申请人： Zheng Yuan , Tejas Bhandarkar , Yongjian Tian
发明人： Zheng Yuan , Tejas Bhandarkar , Yongjian Tian
IPC分类号： H04M11/00 , H04M3/42 , H04N7/14
CPC分类号： H04L65/4015 , H04L65/602 , H04L65/604 , H04M7/0027
摘要： In one embodiment, a server may obtain source data for a communication session having a combined audio portion and non-audio portion. As such, the server may actively split the audio portion of the communication session from the non-audio portion of the communication session, and then provide the audio portion (to a first set of one or more phones) over a phone channel and the non-audio portion (to a second set of one or more phones) over a separate data channel. The second set of phones may then obtain and merge the audio portion from the phone channel and the non-audio portion from the data channel to reestablish the full communication session.
摘要翻译：在一个实施例中，服务器可以获得具有组合音频部分和非音频部分的通信会话的源数据。因此，服务器可以主动地从通信会话的非音频部分分离通信会话的音频部分，然后通过电话信道提供音频部分（到一个或多个电话的第一组），并且非 - 音频部分（到一个或多个电话的第二组）通过单独的数据信道。然后，第二组电话可以从数据信道获得并合并来自电话信道和非音频部分的音频部分，以重新建立完整的通信会话。

29. 发明申请

US20130012030A1 METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION 审中-公开
标题翻译：远程等离子体源辅助含硅膜沉积的方法和装置
公开(公告)号：US20130012030A1
公开(公告)日：2013-01-10
申请号：US13634526
申请日：2010-03-17
申请人： Annamalai Lakshmanan , Jianshe Tang , Dustin W. Ho , Francimar C. Schmitt , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh , Hari K. Ponnekanti , Chris Eberspacher , Zheng Yuan
发明人： Annamalai Lakshmanan , Jianshe Tang , Dustin W. Ho , Francimar C. Schmitt , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh , Hari K. Ponnekanti , Chris Eberspacher , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/5096 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.
摘要翻译：提供了在形成太阳能电池期间沉积非晶硅和微晶硅膜的装置和方法。在一个实施方案中，提供了一种方法和装置，用于将氢自由基直接生成并引入到处理室的处理区域中，以与用于在基底上沉积膜的含硅前体反应。在一个实施方案中，氢自由基由远程等离子体源产生，并且经由视线路径直接引入处理区域，以在到达处理区域之前最小化氢自由基的能量损失。

30. 发明申请

US20120171852A1 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含有薄膜沉积的硅离子等离子体源
公开(公告)号：US20120171852A1
公开(公告)日：2012-07-05
申请号：US13266978
申请日：2010-08-02
申请人： Zheng Yuan , Mandar B. Pandit , Francimar C. Schmitt , Yi Zheng , Fan Yang , Lipan Li , Alan Tso , Dustin W. Ho , Tom K. Cho , Randhir Thakur
发明人： Zheng Yuan , Mandar B. Pandit , Francimar C. Schmitt , Yi Zheng , Fan Yang , Lipan Li , Alan Tso , Dustin W. Ho , Tom K. Cho , Randhir Thakur
IPC分类号： H01L21/20 , C23C16/50
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，其耦合到处理室，向处理室施加小于17.5mW / cm 2的RF功率，并在基板上形成含硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式