专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

AU9591698A Method for forming solar cell materials from particulates 未知
公开(公告)号：AU9591698A
公开(公告)日：1999-04-27
申请号：AU9591698
申请日：1998-09-30
申请人： CHRIS EBERSPACHER , KAREN L PAULS
发明人： EBERSPACHER CHRIS , PAULS KAREN L
IPC分类号： B05D20060101 , B05D3/02 , B05D5/12 , B05D7/00 , C01B13/18 , C01G3/00 , H01L31/032 , H01L31/18
摘要： A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

2. 发明申请

US20130034932A1 Thin-Film Devices Formed From Solid Group IIIA Particles 审中-公开
标题翻译：由固体IIIA族颗粒形成的薄膜器件
公开(公告)号：US20130034932A1
公开(公告)日：2013-02-07
申请号：US13571685
申请日：2012-08-10
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

3. 发明申请

US20110114182A1 THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA PARTICLES 审中-公开
标题翻译：从固体IIIA颗粒形成的薄膜装置
公开(公告)号：US20110114182A1
公开(公告)日：2011-05-19
申请号：US12776353
申请日：2010-05-07
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

4. 发明申请

US20110065227A1 COMMON LASER MODULE FOR A PHOTOVOLTAIC PRODUCTION LINE 审中-公开
标题翻译：用于光伏生产线的通用激光模块
公开(公告)号：US20110065227A1
公开(公告)日：2011-03-17
申请号：US12559838
申请日：2009-09-15
申请人： Tzay-Fa Su , David Morishige , David Tanner , Chris Eberspacher
发明人： Tzay-Fa Su , David Morishige , David Tanner , Chris Eberspacher
IPC分类号： H01L31/18 , B23K26/00
CPC分类号： H01L31/18 , B23K26/364 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： Embodiments of the present invention generally relate to an automated production line using a common laser scribe module for providing consistent scribe lines in multiple layers during the formation of thin film photovoltaic modules. The common laser scribe module includes a plurality of identical, programmable laser tools configured to emit radiation at a common wavelength. Substrates flowing through the production line are tracked by a system controller, which identifies available laser tools within the common laser scribe module and routes substrates to available tools for scribing features in one or more layers disposed on the substrates. The system controller also sets and controls laser parameters, such as power, pulse frequency, pulse width, and laser pattern, in order to accurately and consistently produce scribed lines in the appropriate material layer of the substrate.
摘要翻译：本发明的实施方案一般涉及使用公共激光划片模块的自动化生产线，用于在薄膜光伏模块的形成期间在多层中提供一致的划线。常见的激光划片模块包括多个相同的可编程激光工具，其被配置为发射共同波长的辐射。流经生产线的基板由系统控制器跟踪，系统控制器识别公共激光划片模块内的可用激光工具，并将基板路由到可用于在基板上设置的一个或多个层中的划线特征的工具。系统控制器还设置和控制诸如功率，脉冲频率，脉冲宽度和激光图案的激光器参数，以便准确且一致地在衬底的适当材料层中产生划线。

5. 发明申请

US20100291758A1 Thin-Film Devices Formed From Solid Particles 有权
标题翻译：固体颗粒形成的薄膜器件
公开(公告)号：US20100291758A1
公开(公告)日：2010-11-18
申请号：US12304683
申请日：2007-06-12
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
IPC分类号： H01L21/18 , C09D1/00
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

6. 发明申请

US20080057203A1 SOLID GROUP IIIA PARTICLES FORMED VIA QUENCHING 审中-公开
标题翻译：固体IIIA颗粒通过捣碎形成
公开(公告)号：US20080057203A1
公开(公告)日：2008-03-06
申请号：US11762058
申请日：2007-06-12
申请人： Matthew Robinson , Chris Eberspacher , Jeroen Van Duren
发明人： Matthew Robinson , Chris Eberspacher , Jeroen Van Duren
IPC分类号： B05D3/04
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a process for forming solid particles is provided. The method includes providing a first suspension of solid and/or liquid particles containing at least one group IIIA element. A material may be added to substantially increase the melting point of at least one set of group IIIA-containing particles in the suspension into higher-melting solid particles comprising an alloy of the group IIIA element and at least a part of the added material. The suspension may be deposited onto a substrate to form a precursor layer on the substrate and the precursor layer is reacted in a suitable atmosphere to form a film.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在一个实施方案中，提供了形成固体颗粒的方法。该方法包括提供含有至少一种IIIA族元素的固体和/或液体颗粒的第一悬浮液。可以加入材料以将悬浮液中至少一组含IIIA族颗粒的熔点大大增加到包含IIIA族元素和至少一部分添加材料的合金的更高熔点固体颗粒中。悬浮液可以沉积在基底上以在基底上形成前体层，并且前体层在合适的气氛中反应以形成膜。

7. 发明授权

US08617640B2 Thin-film devices formed from solid group IIIA alloy particles 失效
标题翻译：由固体IIIA族合金颗粒形成的薄膜器件
公开(公告)号：US08617640B2
公开(公告)日：2013-12-31
申请号：US11762056
申请日：2007-06-12
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
IPC分类号： B05D5/06
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range. The method may involve formulating a precursor material comprising of: a) particles of the first material and b) particles containing at least one element from one of the following: a group IB element, a group IIIA element, a group VIA element, alloys containing any of the foregoing elements, or combinations thereof.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在一个实施例中，提供了一种用于产生固体合金颗粒的方法。该方法可以包括提供包含至少一种合金的第一材料，其包含：a）IIIA族元素，b）至少一种不同于a）的IIIA族元素的IB，IIIA和/或VIA元素，c ）一组基于IA的材料。基于IA族的材料可以包括足够的量，使得在室温和高于室温的沉积温度之间的温度范围内不存在合金的液相，其中IIIA族元素在该温度下为液体范围。该方法可以包括配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，如下列之一：IB族元素，IIIA族元素，VIA族元素，含任何上述要素，或其组合。

8. 发明申请

US20130012030A1 METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION 审中-公开
标题翻译：远程等离子体源辅助含硅膜沉积的方法和装置
公开(公告)号：US20130012030A1
公开(公告)日：2013-01-10
申请号：US13634526
申请日：2010-03-17
申请人： Annamalai Lakshmanan , Jianshe Tang , Dustin W. Ho , Francimar C. Schmitt , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh , Hari K. Ponnekanti , Chris Eberspacher , Zheng Yuan
发明人： Annamalai Lakshmanan , Jianshe Tang , Dustin W. Ho , Francimar C. Schmitt , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh , Hari K. Ponnekanti , Chris Eberspacher , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/5096 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.
摘要翻译：提供了在形成太阳能电池期间沉积非晶硅和微晶硅膜的装置和方法。在一个实施方案中，提供了一种方法和装置，用于将氢自由基直接生成并引入到处理室的处理区域中，以与用于在基底上沉积膜的含硅前体反应。在一个实施方案中，氢自由基由远程等离子体源产生，并且经由视线路径直接引入处理区域，以在到达处理区域之前最小化氢自由基的能量损失。

9. 发明申请

US20120295440A1 LASER MATERIAL REMOVAL METHODS AND APPARATUS 失效
标题翻译：激光材料去除方法和装置
公开(公告)号：US20120295440A1
公开(公告)日：2012-11-22
申请号：US13565455
申请日：2012-08-02
申请人： ZHENHUA ZHANG , Virendra V.S. Rana , Vinay K. Shah , Chris Eberspacher
发明人： ZHENHUA ZHANG , Virendra V.S. Rana , Vinay K. Shah , Chris Eberspacher
IPC分类号： H01L21/768 , B23K26/36
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译：本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。在一个实施例中，提供了根据期望的图案去除沉积在太阳能电池基板上的电介质层的部分的装置。在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。

10. 发明申请

US20080175982A1 THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA ALLOY PARTICLES 失效
标题翻译：由固体IIIA族合金颗粒形成的薄膜装置
公开(公告)号：US20080175982A1
公开(公告)日：2008-07-24
申请号：US11762056
申请日：2007-06-12
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
IPC分类号： B05D3/00 , C22C1/00 , B22F9/16 , H01L31/18 , B05D1/02 , C09D11/00
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range. The method may involve formulating a precursor material comprising of: a) particles of the first material and b) particles containing at least one element from one of the following: a group IB element, a group IIIA element, a group VIA element, alloys containing any of the foregoing elements, or combinations thereof.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在一个实施例中，提供了一种用于产生固体合金颗粒的方法。该方法可以包括提供包含至少一种合金的第一材料，其包含：a）IIIA族元素，b）至少一种不同于a）的IIIA族元素的IB，IIIA和/或VIA元素，c ）一组基于IA的材料。基于IA族的材料可以包括足够的量，使得在室温和高于室温的沉积温度之间的温度范围内不存在合金的液相，其中IIIA族元素在该温度下为液体范围。该方法可以包括配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，如下列之一：IB族元素，IIIA族元素，VIA族元素，含任何上述要素，或其组合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式