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21. 发明申请

US20100314767A1 SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME 有权
标题翻译：自对准双DAMASCENE BEOL结构与方形低K材料及其形成方法
公开(公告)号：US20100314767A1
公开(公告)日：2010-12-16
申请号：US12485366
申请日：2009-06-16
申请人： Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
发明人： Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/4846 , H01L21/76801 , H01L21/76808 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/49894 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.
摘要翻译：提供了自对准的互连结构，其包括位于衬底的表面上的第一图案化和固化的低k材料，其中第一图案化和固化的低k材料包括至少一个第一互连图案（通孔或沟槽图案）其中。具有不同于第一互连图案的至少一个第二互连图案的第二图案化和固化的低k材料位于第一图案化和固化的低k材料的顶部。第二图案化和固化的低k材料的一部分部分地填充第一图案化和固化的低k材料内的至少一个第一互连。导电材料填充至少一个第一互连图案和至少一个第二互连图案。还提供了形成这种自对准互连结构的方法。

22. 发明授权

US07671470B2 Enhanced mechanical strength via contacts 失效
公开(公告)号：US07671470B2
公开(公告)日：2010-03-02
申请号：US12179057
申请日：2008-07-24
申请人： Chih-Chao Yang , Griselda Bonilla , Shyng-Tsong Chen , Kelly Malone
发明人： Chih-Chao Yang , Griselda Bonilla , Shyng-Tsong Chen , Kelly Malone
IPC分类号： H01L21/461
CPC分类号： H01L23/5226 , H01L21/76844 , H01L21/76847 , H01L21/76877 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

23. 发明授权

US07666753B2 Metal capping process for BEOL interconnect with air gaps 失效
标题翻译：带气隙的BEOL互连金属封盖工艺
公开(公告)号：US07666753B2
公开(公告)日：2010-02-23
申请号：US11622188
申请日：2007-01-11
申请人： Griselda Bonilla , Shyng-Tsong Chen , Matthew E. Colburn , Chih-Chao Yang
发明人： Griselda Bonilla , Shyng-Tsong Chen , Matthew E. Colburn , Chih-Chao Yang
IPC分类号： H01L21/76
CPC分类号： H01L23/53238 , H01L21/7682 , H01L21/76834 , H01L21/76849 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： The embodiments of the invention provide a metal capping process for a BEOL interconnect with air gaps. More specifically an apparatus is provided comprising metal lines within a first dielectric. Metal caps are over the metal lines, wherein the metal caps contact the metal lines. In addition, air gaps are between the metal lines, wherein the air gaps are between the metal caps. A second dielectric is also provided over the bottom portion of a first dielectric, wherein a top portion of the second dielectric is over the metal caps, and wherein top portions of the first dielectric and bottom portions of the second dielectric comprise sides of the air gap. The apparatus further includes dielectric caps over the metal lines, wherein the dielectric caps contact the metal caps.
摘要翻译：本发明的实施例提供了一种用于具有气隙的BEOL互连的金属封盖工艺。更具体地，提供了一种包括在第一电介质内的金属线的装置。金属盖在金属线上方，金属帽与金属线接触。此外，气隙在金属线之间，其中气隙在金属盖之间。第二电介质还设置在第一电介质的底部上方，其中第二电介质的顶部在金属帽之上，并且其中第二电介质的第一电介质和底部的顶部包括气隙的侧面。该装置还包括金属线上的电介质盖，其中介电帽与金属盖接触。

24. 发明申请

US20080284030A1 ENHANCED MECHANICAL STRENGTH VIA CONTACTS 失效
标题翻译：通过联系增强机械强度
公开(公告)号：US20080284030A1
公开(公告)日：2008-11-20
申请号：US12179057
申请日：2008-07-24
申请人： Chih-Chao Yang , Griselda Bonilla , Shyng-Tsong Chen , Kelly Malone
发明人： Chih-Chao Yang , Griselda Bonilla , Shyng-Tsong Chen , Kelly Malone
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L21/76844 , H01L21/76847 , H01L21/76877 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.
摘要翻译：本发明提供了一种改进的可靠性的互连结构。本发明的互连结构具有增强的由嵌入式金属衬垫提供的通孔触点的机械强度。嵌入的金属衬垫可以是连续的或不连续的。不连续的嵌入式金属衬垫由位于层间介质层内的通孔底部的不连续界面提供。

25. 发明申请

US20070117342A1 GCIB LINER AND HARDMASK REMOVAL PROCESS 有权
标题翻译： GCIB LINER和HARDMASK拆卸过程
公开(公告)号：US20070117342A1
公开(公告)日：2007-05-24
申请号：US11164423
申请日：2005-11-22
申请人： Shyng-Tsong Chen , John Fitzsimmons , Shom Ponoth , Terry Spooner
发明人： Shyng-Tsong Chen , John Fitzsimmons , Shom Ponoth , Terry Spooner
IPC分类号： H01L21/76
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/76802 , H01L21/7684
摘要： A method comprises depositing a dielectric film layer, a hard mask layer, and a patterned photo resist layer on a substrate. The method further includes selectively etching the dielectric film layer to form sub-lithographic features by reactive ion etch processing and depositing a barrier metal layer and a copper layer. The method further includes etching the barrier metal layer and hard mask layer by gas cluster ion beam (GCIB) processing.
摘要翻译：一种方法包括在衬底上沉积电介质膜层，硬掩模层和图案化光刻胶层。该方法还包括通过反应离子蚀刻处理选择性地蚀刻电介质膜层以形成亚光刻特征，并沉积阻挡金属层和铜层。该方法还包括通过气体簇离子束（GCIB）处理蚀刻阻挡金属层和硬掩模层。

26. 发明授权

US07186166B2 Fiber embedded polishing pad 失效
标题翻译：光纤嵌入式抛光垫
公开(公告)号：US07186166B2
公开(公告)日：2007-03-06
申请号：US11271744
申请日：2005-11-14
申请人： Shyng-Tsong Chen , Kenneth Davis , Oscar Kai Chi Hsu , Kenneth Rodbell , Jean Vangsness
发明人： Shyng-Tsong Chen , Kenneth Davis , Oscar Kai Chi Hsu , Kenneth Rodbell , Jean Vangsness
IPC分类号： B24B1/00
CPC分类号： B24D3/28 , B24B37/22 , B24B37/24 , B24B37/26 , B24D11/008 , B24D18/00 , B24D18/0009
摘要： A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The loose fibers define and the precursors were mixed first with curatives, then mold into a pad form. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers.
摘要翻译：一种抛光垫，其具有包含嵌入在通过聚合物前体的反应形成的基质聚合物中的纤维的主体。松散的纤维定义并且前体与固化剂混合，然后模制成垫形式。衬垫在其抛光表面可以包括薄层的自由纤维。至少一部分自由纤维的片段嵌入在聚合物和纤维的相邻体中。

27. 发明授权

US06383066B1 Multilayered polishing pad, method for fabricating, and use thereof 失效
标题翻译：多层抛光垫，其制造方法及其应用
公开(公告)号：US06383066B1
公开(公告)日：2002-05-07
申请号：US09599514
申请日：2000-06-23
申请人： Shyng-Tsong Chen , Alex Siu Keung Chung , Oscar Kai Chi Hsu , Kenneth P. Rodbell , Jean Vangsness
发明人： Shyng-Tsong Chen , Alex Siu Keung Chung , Oscar Kai Chi Hsu , Kenneth P. Rodbell , Jean Vangsness
IPC分类号： B24D1100
CPC分类号： B24B37/22 , B24B37/24 , B24D3/28
摘要： A multilayered polishing pad especially suitable for chemical-mechanical polishing or planarizing metal, semiconductor or optical surfaces is provided. The invention allows the mechanical and polishing properties of the several layers to be independently varied.
摘要翻译：提供了特别适用于化学机械抛光或平面化金属，半导体或光学表面的多层抛光垫。本发明允许独立地改变若干层的机械和抛光性能。

28. 发明申请

US20130171829A1 Titanium-Nitride Removal 有权
标题翻译：去除钛 - 氮化物
公开(公告)号：US20130171829A1
公开(公告)日：2013-07-04
申请号：US13343190
申请日：2012-01-04
申请人： John A. Fitzsimmons , Shyng-Tsong Chen , David L. Rath , Muthumanickam Sankarapandian , Oscar van der Straten
发明人： John A. Fitzsimmons , Shyng-Tsong Chen , David L. Rath , Muthumanickam Sankarapandian , Oscar van der Straten
IPC分类号： H01L21/3065 , C11D7/60
CPC分类号： C09K13/00 , H01L21/02063 , H01L21/31144 , H01L21/32134 , H01L21/76802 , H01L21/76804
摘要： A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.
摘要翻译：一种去除不需要的金属硬掩模的化学溶液，但仍然对器件布线冶金和电介质材料具有选择性。本发明通过在接收结构金属化之前选择性去除金属硬掩模而不损害限定半导体器件所需的任何现有金属或介电材料，从而降低纵横比，例如，铜冶金或器件电介质。因此，将导致金属填充物的改进的纵横比，而不会对设备的限定的金属接收结构引入任何过大的梯形横截面特征。

29. 发明授权

US08232195B2 Method for fabricating back end of the line structures with liner and seed materials 失效
标题翻译：用衬里和种子材料制造线结构后端的方法
公开(公告)号：US08232195B2
公开(公告)日：2012-07-31
申请号：US12137875
申请日：2008-06-12
申请人： Chih-Chao Yang , Shyng-Tsong Chen , Shom Ponoth , Terry A. Spooner
发明人： Chih-Chao Yang , Shyng-Tsong Chen , Shom Ponoth , Terry A. Spooner
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/76865
摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.
摘要翻译：用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。

30. 发明申请

US20110193230A1 FORMATION OF AIR GAP WITH PROTECTION OF METAL LINES 失效
标题翻译：形成有保护金属线的空气隙
公开(公告)号：US20110193230A1
公开(公告)日：2011-08-11
申请号：US12700792
申请日：2010-02-05
申请人： Takeshi Nogami , Shyng-Tsong Chen , David V. Horak , Son V. Nguyen , Shom Ponoth , Chih-Chao Yang
发明人： Takeshi Nogami , Shyng-Tsong Chen , David V. Horak , Son V. Nguyen , Shom Ponoth , Chih-Chao Yang
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L24/80 , H01L21/0337 , H01L21/31144 , H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L23/53295
摘要： A method is provided for fabricating a microelectronic element having an air gap in a dielectric layer thereof. A dielectric cap layer can be formed which has a first portion overlying surfaces of metal lines, the first portion extending a first height above a height of a surface of the dielectric layer and a second portion overlying the dielectric layer surface and extending a second height above the height of the surface of the dielectric layer, the second height being greater than the first height. After forming the cap layer, a mask can be formed over the cap layer. The mask can have a multiplicity of randomly disposed holes. Each hole may expose a surface of only the second portion of the cap layer which has the greater height. The mask may fully cover a surface of the first portion of the cap layer having the lower height. Subsequently, an etchant can be directed towards the first and second portions of the cap layer to form holes in the cap layer aligned with the holes in the mask. Material can be removed from the dielectric layer where exposed to the etchant by the holes in the cap layer. At such time, the mask can protect the first portion of the cap layer and the metal lines from being attacked by the etchant.
摘要翻译：提供了一种用于制造其电介质层中具有气隙的微电子元件的方法。可以形成介电盖层，其具有覆盖金属线表面的第一部分，第一部分在电介质层的表面的高度之上延伸第一高度，以及覆盖介电层表面的第二部分，并且延伸第二高度电介质层的表面的高度，第二高度大于第一高度。在形成盖层之后，可以在盖层之上形成掩模。掩模可以具有多个随机布置的孔。每个孔可以暴露仅具有较大高度的盖层的第二部分的表面。掩模可以完全覆盖具有较低高度的盖层的第一部分的表面。随后，可以将蚀刻剂引导到盖层的第一和第二部分，以在盖层中形成与掩模中的孔对准的孔。可以通过盖层中的孔从暴露于蚀刻剂的介电层去除材料。此时，掩模可以保护盖层的第一部分和金属线不被蚀刻剂侵蚀。

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