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21. 发明授权

US08546210B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08546210B2
公开(公告)日：2013-10-01
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

22. 发明授权

US08044464B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08044464B2
公开(公告)日：2011-10-25
申请号：US12209739
申请日：2008-09-12
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/01
CPC分类号： H01L27/1266 , H01L21/823807 , H01L21/823871 , H01L23/433 , H01L23/481 , H01L23/552 , H01L27/0688 , H01L27/1214 , H01L27/1229 , H01L29/7843 , H01L2224/16 , H01L2224/73253 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195
摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.
摘要翻译：目的是在具有SOI结构的半导体器件中实现高性能和低功耗。此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管与可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

23. 发明授权

US07982250B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07982250B2
公开(公告)日：2011-07-19
申请号：US12209696
申请日：2008-09-12
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/12
CPC分类号： H01L21/8221 , H01L27/0688 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2924/00011 , H01L2924/00014 , H01L2224/29099 , H01L2224/13099 , H01L2224/80001
摘要： A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer which is prepared by a process including separation of the semiconductor layer from a semiconductor substrate followed by bonding thereof over the substrate. Each of the plurality of field-effect transistors is covered with an insulating film which provides distortion of the semiconductor layer. Furthermore, the crystal axis of the semiconductor layer, which is parallel to the crystal plane thereof, is set to a channel length direction of the semiconductor layer, which enables production of the semiconductor device with high performance and low power consumption having an SOI structure.
摘要翻译：示出了一种半导体器件，其中在具有绝缘表面的衬底上层叠多个场效应晶体管，层间绝缘层介于其间。多个场效应晶体管中的每一个具有半导体层，该半导体层通过包括将半导体层与半导体衬底分离并随后在衬底上结合的工艺制备。多个场效应晶体管中的每一个被覆盖有提供半导体层失真的绝缘膜。此外，将半导体层的与其晶面平行的晶轴设定为半导体层的沟道长度方向，能够制造具有SOI结构的高性能，低功耗的半导体器件。

24. 发明授权

US07692194B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07692194B2
公开(公告)日：2010-04-06
申请号：US12015362
申请日：2008-01-16
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a novel structure by which the operating characteristics and reliability are improved and a manufacturing method thereof. An island-shaped semiconductor layer provided over a substrate, including a channel formation region provided between a pair of impurity regions; a first insulating layer provided so as to be in contact with the side surface of the semiconductor layer; a gate electrode provided over the channel formation region so as to get across the semiconductor layer; and a second insulating layer provided between the channel formation region and the gate electrode are included. The semiconductor layer is locally thinned, the channel formation region is provided in the thinned region, and the second insulating layer covers the first insulating layer provided on the side surface of the semiconductor layer at least in the region which overlaps with the gate electrode.
摘要翻译：具有改善其操作特性和可靠性的新颖结构的半导体器件及其制造方法。一种岛状半导体层，设置在衬底上，包括设置在一对杂质区之间的沟道形成区; 设置成与半导体层的侧表面接触的第一绝缘层; 栅电极，设置在所述沟道形成区上方以穿过所述半导体层; 并且包括设置在沟道形成区域和栅电极之间的第二绝缘层。半导体层被局部变薄，沟道形成区域设置在减薄区域中，并且第二绝缘层至少在与栅电极重叠的区域中覆盖设置在半导体层的侧表面上的第一绝缘层。

25. 发明授权

US07312473B2 Display device and electronic device using the same 有权
标题翻译：显示装置和使用其的电子装置
公开(公告)号：US07312473B2
公开(公告)日：2007-12-25
申请号：US10329993
申请日：2002-12-27
申请人： Jun Koyama , Atsuo Isobe , Hiroshi Shibata , Shunpei Yamazaki
发明人： Jun Koyama , Atsuo Isobe , Hiroshi Shibata , Shunpei Yamazaki
IPC分类号： H01L29/00 , H01L29/94 , H01L33/00
CPC分类号： H01L29/78696 , H01L27/1296 , H01L27/3244 , H01L29/66757 , H01L29/78675
摘要： In display devices using thin film transistors, a graphoepitaxy is used for a semiconductor layer crystallizing process. Thus, a display device in which crystallinity is improved, a variation in characteristics of thin film transistors is reduced, display nonuniformity is less, and a display quality is superior is provided. Steps are formed on a substrate in advance and an amorphous silicon film is formed thereon, and then laser crystallization is conducted in a direction perpendicular to the steps.
摘要翻译：在使用薄膜晶体管的显示装置中，使用石墨刻蚀技术进行半导体层结晶工艺。因此，结晶度提高的显示装置，薄膜晶体管的特性变化减小，显示不均匀性低，显示质量优异。预先在基板上形成台阶，在其上形成非晶硅膜，然后在与台阶垂直的方向上进行激光结晶。

26. 发明申请

US20070120127A1 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20070120127A1
公开(公告)日：2007-05-31
申请号：US11698864
申请日：2007-01-29
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/76 , H01L29/04 , H01L29/06
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

27. 发明申请

US20070070346A1 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20070070346A1
公开(公告)日：2007-03-29
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： G01J3/30
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

28. 发明授权

US07166863B2 Semiconductor element, semiconductor device, electronic device, TV set and digital camera 有权
标题翻译：半导体元件，半导体器件，电子设备，电视机和数码相机
公开(公告)号：US07166863B2
公开(公告)日：2007-01-23
申请号：US10941823
申请日：2004-09-16
申请人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L29/78696
摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
摘要翻译：提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域区域，其中导电区域被设置成跨过线性条纹图案延伸的绝缘膜。

29. 发明申请

US20060270066A1 Organic transistor, manufacturing method of semiconductor device and organic transistor 审中-公开
标题翻译：有机晶体管，半导体器件和有机晶体管的制造方法
公开(公告)号：US20060270066A1
公开(公告)日：2006-11-30
申请号：US11405514
申请日：2006-04-18
申请人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
发明人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/0512 , H01L21/02175 , H01L21/02244 , H01L21/02247 , H01L21/02252 , H01L21/31683 , H01L51/0002 , H01L51/0055 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/0566
摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.
摘要翻译：本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜等离子体，其中电子密度为10〜30cm -3以上，等离子体激活时电子温度为0.2eV〜2.0eV，直接与作为要被绝缘的栅电极的导电层的一部分。

30. 发明授权

US07078768B2 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof 失效
公开(公告)号：US07078768B2
公开(公告)日：2006-07-18
申请号：US10815701
申请日：2004-04-02
申请人： Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
发明人： Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
IPC分类号： H01L27/12
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400–700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1–5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.

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