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21. 发明申请

US20110042670A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110042670A1
公开(公告)日：2011-02-24
申请号：US12990408
申请日：2009-04-28
申请人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Masafumi Sano
发明人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Masafumi Sano
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/78621
摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.
摘要翻译：提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

22. 发明授权

US07855379B2 Electron device using oxide semiconductor and method of manufacturing the same 有权
标题翻译：使用氧化物半导体的电子器件及其制造方法
公开(公告)号：US07855379B2
公开(公告)日：2010-12-21
申请号：US12123103
申请日：2008-05-19
申请人： Ryo Hayashi , Masafumi Sano
发明人： Ryo Hayashi , Masafumi Sano
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225
摘要： In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
摘要翻译：在基板上设置有至少具有源电极，漏电极，包括沟道的半导体区域，栅极绝缘膜和栅极电极的多个薄膜晶体管的电子器件，设置在基板之间的器件分离区域多个薄膜晶体管和半导体区域由相同的金属氧化物层构成，半导体区域的电阻形成为低于器件分离区域的电阻。

23. 发明授权

US07851792B2 Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US07851792B2
公开(公告)日：2010-12-14
申请号：US12089907
申请日：2006-11-01
申请人： Toshiaki Aiba , Masafumi Sano , Nobuyuki Kaji
发明人： Toshiaki Aiba , Masafumi Sano , Nobuyuki Kaji
IPC分类号： H01L29/786
CPC分类号： H01L29/04 , H01L29/7869 , H01L29/78696
摘要： Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.
摘要翻译：提供了一种包括有源层和栅极绝缘膜的场效应晶体管，其中有源层包括含有非晶区域和结晶区域的非晶氧化物层，并且晶体区域在界面附近或与界面接触在非晶氧化物层和栅极绝缘膜之间。

24. 发明授权

US07829444B2 Field effect transistor manufacturing method 有权
标题翻译：场效应晶体管制造方法
公开(公告)号：US07829444B2
公开(公告)日：2010-11-09
申请号：US11269641
申请日：2005-11-09
申请人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L21/20
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/78693
摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译：提供一种用于制造场效应晶体管的新颖方法。在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

25. 发明申请

US20070184191A1 METHOD OF FORMING DEPOSITED FILM AND METHOD OF FORMING PHOTOVOLTAIC ELEMENT 失效
标题翻译：形成沉积膜的方法和形成光伏元件的方法
公开(公告)号：US20070184191A1
公开(公告)日：2007-08-09
申请号：US11627066
申请日：2007-01-25
申请人： Yasuyoshi Takai , Masafumi Sano , Keishi Saito
发明人： Yasuyoshi Takai , Masafumi Sano , Keishi Saito
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/545 , Y02E10/545 , Y02E10/548
摘要： Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.
摘要翻译：提供了通过等离子体CVD包含微晶硅的沉积膜，其包括改变选自高频功率密度，相对于电极间距离的偏置电压，相对于电极面积的偏置电流，高电平用于形成微晶区域的沉积膜的条件和相对于源气体流量的稀释气体流量的比率，稀释气体流量与源气体流量的比率，基板温度，压力和电极间距离形成非晶区沉积膜的条件; 以及在沉积膜的晶体系统在非晶态和微晶态之间基本上变化的边界条件附近的预定范围内的条件下形成沉积膜。

26. 发明申请

US20060113539A1 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US20060113539A1
公开(公告)日：2006-06-01
申请号：US11269647
申请日：2005-11-09
申请人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/04 , H01L27/12 , H01L31/0376
CPC分类号： H01L29/51 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要： A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
摘要翻译：提供了一种采用无定形氧化物的新型场效应晶体管。在本发明的一个实施例中，晶体管包括含有浓度小于1×10 -6 / cm 3的电子载流子的无定形氧化物层，栅极绝缘层包括与非晶氧化物接触的第一层和不同于第一层的第二层。

27. 发明授权

US07001460B2 Semiconductor element and its manufacturing method 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07001460B2
公开(公告)日：2006-02-21
申请号：US10625672
申请日：2003-07-24
申请人： Keishi Saito , Masafumi Sano
发明人： Keishi Saito , Masafumi Sano
IPC分类号： C30B25/14
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/03687 , H01L31/056 , H01L31/206 , Y02E10/52 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
摘要翻译：在包含微晶半导体的半导体元件中，在微晶晶粒内提供半导体结。此外，在包含微晶半导体的半导体元件中，作为混合物提供不同晶粒直径的微晶粒以形成半导体层。因此，半导体结的不连续性减小，从而提高半导体元件的特性，耐久性和耐热性。半导体层的失真也减少了。

28. 发明申请

US20050173704A1 Semiconductor element and its manufacturing method 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20050173704A1
公开(公告)日：2005-08-11
申请号：US10625672
申请日：2003-07-24
申请人： Keishi Saito , Masafumi Sano
发明人： Keishi Saito , Masafumi Sano
IPC分类号： H01L31/0368 , H01L31/052 , H01L31/076 , H01L31/20 , H01L29/04
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/03687 , H01L31/056 , H01L31/206 , Y02E10/52 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
摘要翻译：在包含微晶半导体的半导体元件中，在微晶晶粒内提供半导体结。此外，在包含微晶半导体的半导体元件中，提供作为混合物的不同粒径的微晶粒以形成半导体层。因此，提高了半导体结的不连续性以改善半导体元件的特性，耐久性和耐热性能。半导体层的失真也减少了。

29. 发明申请

US20050028860A1 Stacked photovoltaic device 失效
标题翻译：堆叠式光伏器件
公开(公告)号：US20050028860A1
公开(公告)日：2005-02-10
申请号：US10935173
申请日：2004-09-08
申请人： Masafumi Sano , Tetsuro Nakamura
发明人： Masafumi Sano , Tetsuro Nakamura
IPC分类号： H01L31/04 , H01L31/076 , H01L31/18 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/1816 , H01L31/1824 , H01L31/202 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： [Problem(s)] A stacked photovoltaic device can be provided which is practicable and low-cost and yet has a high reliability, and also has a high photoelectric conversion efficiency. [Means for Solving the Problem] A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon type non-single-crystal semiconductors. An amorphous silicon is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon is used as the i-type layer of a third p-i-n junction, the first to third layers being in the order from the light-incident side.
摘要翻译： [问题]可以提供切实可行且成本低并且具有高可靠性并且还具有高光电转换效率的叠层光伏器件。解决问题的手段堆叠式光伏器件包括层叠的至少三个pin结构成器件，每个具有由硅型非晶硅层形成的p型层，i型层和n型层，单晶半导体。非晶硅用作第一pin结的i型层，微晶硅用作第二pin结的i型层，微晶硅用作第三pin结的i型层第一至第三层的顺序为光入射侧。

30. 发明申请

US20050016862A1 Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device 审中-公开
标题翻译：生产氧化锌薄膜的方法，制造光伏器件的方法和制造半导体器件的方法
公开(公告)号：US20050016862A1
公开(公告)日：2005-01-27
申请号：US10920376
申请日：2004-08-18
申请人： Masafumi Sano , Yuichi Sonoda
发明人： Masafumi Sano , Yuichi Sonoda
IPC分类号： C01G9/02 , C25D9/04 , C25D9/08 , H01L31/0216 , H01L31/0236 , H01L31/04 , C25D3/22 , H02N6/00
CPC分类号： C25D9/04 , H01L31/02167 , H01L31/02363 , Y02E10/50
摘要： The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate.
摘要翻译：本发明提供一种氧化锌薄膜的制造方法，其中，在浸渍在至少含有锌离子，铵离子和锌氨络离子的水溶液中的导电性基板之间通过电流，以及作为阳极浸渍的电极该水溶液在导电基材上形成氧化锌薄膜。该方法稳定了氧化锌薄膜的形成，提高了薄膜与基板的粘合性。

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