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21. 发明专利

JP2012030994A Apparatus and method for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：JP2012030994A
公开(公告)日：2012-02-16
申请号：JP2010170404
申请日：2010-07-29
申请人： Denso Corp , National Institute Of Advanced Industrial Science & Technology , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所 , 独立行政法人産業技術総合研究所
发明人： KOJIMA ATSUSHI , HIROSE FUSAO , KOJIMA KAZUSATO , KATO TOMOHISA , NISHIKAWA KOICHI , ADACHI AYUMI
IPC分类号： C30B29/36 , C30B23/06 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To suppress variation in dopant concentration when growing an SiC single crystal.SOLUTION: In the method for producing the SiC single crystal, an SiC raw material powder 3 and a dopant element 4 are arranged in different locations and the dopant element 4 is arranged in a separated position from a seed crystal 2 relative to the SiC raw material powder 3, and the temperature of an arrangement location of the dopant element 4 is lower than the arrangement location of the SiC raw material powder 3. Thereby, full evaporation of the dopant element 4 before the SiC raw material powder 3 starts sublimating is prevented and the dopant to be segregated only in the growth first stage of an ingot of the grown SiC single crystal is suppressed. Thus the SiC single crystal suppressible of the variation in the dopant concentration can be produced.
摘要翻译：要解决的问题：为了抑制生长SiC单晶时的掺杂剂浓度的变化。解决方案：在SiC单晶的制造方法中，SiC原料粉末3和掺杂剂元素4配置在不同的位置，掺杂剂元素4相对于晶种2配置在与晶种2分离的位置 SiC原料粉末3，并且掺杂剂元素4的配置位置的温度低于SiC原料粉末3的配置位置。由此，在SiC原料粉末3开始升华之前，掺杂剂元素4的充分蒸发并且仅在生长的SiC单晶的锭的生长第一阶段中偏析的掺杂剂被抑制。因此，可以制造抑制掺杂剂浓度变化的SiC单晶。版权所有（C）2012，JPO＆INPIT

22. 发明专利

JP2012020893A Apparatus for manufacturing silicon carbide single crystal, and method for manufacturing silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的装置，以及用于制造碳化硅单晶的方法
公开(公告)号：JP2012020893A
公开(公告)日：2012-02-02
申请号：JP2010158838
申请日：2010-07-13
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To enable to suppress the generation of a dissimilar polymorphic or a different orientation crystal by controlling the surface shape in the middle of the growth of a seed crystal and an SiC single crystal, even not arranging the seed crystal shifting from the center axis of a crucible.SOLUTION: A shielding part 6 which has a shielding plate 6a which is oppositely arranged to an SiC single crystal substrate 3 becoming a seed crystal is provided. In addition, a sublimation gas is made to be selectively supplied to a region 3a in which screw dislocation can be generated through a gas supply hole 6b prepared at the shielding plate 6a of the shielding part 6. In this way, it becomes possible to make the shape of a convex in which the amount of growth become largest at the side of the region 3a in which screw dislocation can be generated rather than the center of the SiC single crystal substrate 3, it is not necessary to make the thickness of a pedestal 1c unsymmetrical, and to prepare the temperature distribution on the surface 4a in the middle of growth, and the generation of a dissimilar polymorphism or a different orientation crystal can be suppressed.
摘要翻译：解决的问题为了能够通过控制晶种和SiC单晶生长中期的表面形状来抑制异种多晶型物或不同取向晶体的产生，即使不排列晶种从坩埚的中心轴线移动。解决方案：提供一种屏蔽部分6，其具有与形成晶种的SiC单晶衬底3相对布置的屏蔽板6a。此外，升华气体被选择性地供给到通过在屏蔽部6的屏蔽板6a处制备的供气孔6b可以产生螺旋位错的区域3a。这样，可以使在可以产生螺旋位错的区域3a侧的生长量变得最大的凸部的形状而不是SiC单晶基板3的中心，不需要使基座的厚度 1c不对称，并且在生长中期制备表面4a上的温度分布，并且可以抑制异种多晶型或不同取向晶体的产生。版权所有（C）2012，JPO＆INPIT

23. 发明专利

JP2011105525A Apparatus for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置
公开(公告)号：JP2011105525A
公开(公告)日：2011-06-02
申请号：JP2009259235
申请日：2009-11-12
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： TAKAHANE HIDETAKA , KONDO HIROYUKI , HIROSE FUSAO , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing an SiC single crystal, which provides a single crystal having an enlarged diameter and an elongated length while keeping the quality of the crystal. SOLUTION: In the apparatus for producing an SiC single crystal, a guide part 40 is constituted by laminating a plurality of guide members 41-44 equipped with cylindrical parts 41a-44a each having a hollow part in the axis direction of a container body 10. In either one of opposing distal end faces of two guide members 41-44 adjacent in the lamination direction, a plurality of projected parts projecting toward the distal end face of other guide member are provided in a state separated in a circumferential direction, and the guide member on the seed crystal side is laminated on the guide member on the SiC raw material 30 side through the projected parts. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造SiC单晶的装置，其提供具有扩大直径和细长长度的单晶，同时保持晶体的质量。解决方案：在用于制造SiC单晶的装置中，引导部40通过层叠多个引导构件41-44而构成，多个引导构件41-44具有在容器的轴向方向上具有中空部的圆筒部41a〜44a 在沿着层叠方向相邻的两个引导构件41-44的相对的远端面中的任一个中，沿着圆周方向分离的状态设置有朝向另一个引导构件的前端面突出的多个突起部，并且晶种侧的引导构件通过突出部分层叠在SiC原料30侧的引导构件上。版权所有（C）2011，JPO＆INPIT

24. 发明专利

JP2010235390A DISLOCATION CONTROLLING SEED CRYSTAL, PRODUCTION METHOD OF THE SAME, AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL 有权
标题翻译：控制籽晶的分离，其生产方法和SiC单晶的生产方法
公开(公告)号：JP2010235390A
公开(公告)日：2010-10-21
申请号：JP2009085178
申请日：2009-03-31
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： GUNJISHIMA TSUKURU , URAGAMI YASUSHI , ADACHI AYUMI
IPC分类号： C30B29/36 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a dislocation controlling seed crystal and a production method of the seed crystal that has little possibility of inducing a defect in a SiC single crystal during growing, and to provide a production method of a SiC single crystal. SOLUTION: The dislocation controlling seed crystal 10, the method for producing the seed crystal, and the production method of a SiC single crystal using the seed crystal are configured as follows. (1) The dislocation controlling seed crystal 10 comprises α-type SiC. (2) The dislocation controlling seed crystal 10 has a growing face having an offset angle θ of 1° or larger and 15° or smaller. (3) The growing face includes a high quality region 12 having a low screw dislocation density and a screw dislocation region 14 having an area of not more than 50% of the growing face. (4) The screw dislocation region 14 is prepared by forming a receding part for forming the screw dislocation region 14 in a part of a primary growing face of a primary seed crystal to be the high quality region 12, preliminarily growing a SiC single crystal at least in the receding part so as to include the screw dislocation region 14 in a c-end in the offset direction of the growing face, and mirror-polishing the surface of the primary seed crystal to expose the growing face. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：为了提供在生长期间在SiC单晶中引起缺陷几乎没有可能性的晶种的位错控制晶种和晶种的制造方法，并且提供SiC单晶的制造方法。解决方案：使用晶种的位错控制晶种10，晶种的制造方法和SiC单晶的制造方法如下。（1）位错控制晶种10包含α型SiC。（2）位错控制晶种10具有偏移角θ为1°以上且15°以下的生长面。（3）生长面包括具有低螺旋位错密度的高质量区域12和面积不大于生长面的50％的螺旋位错区域14。（4）通过在初级晶种的初级生长面的一部分中形成用于形成螺旋位错区域14的后退部分作为高质量区域12，预先生长SiC单晶的方法来制备螺旋位错区域14 至少在后退部分中将螺旋位错区域14包括在生长面的偏移方向上的c端中，并且对主晶种的表面进行镜面抛光以暴露生长面。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2014043394A Method for manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的方法
公开(公告)号：JP2014043394A
公开(公告)日：2014-03-13
申请号：JP2013247714
申请日：2013-11-29
申请人： Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： KONDO HIROYUKI , TAKAHANE HIDETAKA , ADACHI AYUMI
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon carbide single crystal, in which a stable growth of a SiC single crystal is made possible when this SiC signal crystal is grown by using a manufacturing apparatus having a thermal insulator arranged around a crucible.SOLUTION: A Si content 21 is arranged in a container body 2a as a crucible 2, and a lid 2b is prepared. An insulator 20 made of graphite, in which Si is not absorbed to enclose the circumference of the crucible 2, is arranged at the outer circumference of the crucible 2. A Si-absorbing step is performed to make the insulator 20 absorb the sublimation gas having leaked from the crucible 2 by heating the crucible 2 and accordingly the Si content 21. After this, the crucible 2 is prepared by arranging a powdery raw material 5 in the container body 2a and by arranging a seed crystal 4 on a pedestal 3 disposed in the lid 2b. An insulator 11 having absorbed the Si obtained at the Si absorbing step is arranged around the outer circumference of that crucible 2, and the crucible 2 is heated to perform a growing step of growing a SiC single crystal 6 on the seed crystal 4.
摘要翻译：要解决的问题：提供一种制造碳化硅单晶的方法，其中当通过使用具有布置在坩埚周围的绝热体的制造装置生长该SiC信号晶体时，可以使SiC单晶的稳定生长成为可能。解决方案：将Si含量21设置在作为坩埚2的容器主体2a中，并制备盖2b。在坩埚2的外周配置由石墨制成的绝缘体20，其中Si不被吸收以包围坩埚2的周边。进行Si吸收步骤以使绝缘体20吸收具有通过加热坩埚2和Si含量21从坩埚2泄漏。之后，通过将粉末状原料5布置在容器主体2a中并通过将晶种4布置在设置在底座3上的基座3上来制备坩埚2 盖2b。吸收了在Si吸收步骤中获得的Si的绝缘体11围绕该坩埚2的外周布置，并且对坩埚2进行加热，以进行在籽晶4上生长SiC单晶6的生长步骤。

26. 发明专利

JP2011216819A Method of manufacturing silicon carbide monocrystalline substrate 有权
标题翻译：制造碳化硅单晶衬底的方法
公开(公告)号：JP2011216819A
公开(公告)日：2011-10-27
申请号：JP2010086033
申请日：2010-04-02
申请人： Denso Corp , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー
发明人： KONDO HIROYUKI , MOTODA NOBUO , YAMAZAKI SEIJI , ADACHI AYUMI
IPC分类号： H01L21/304 , B24B27/06 , B28D5/04
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC monocrystalline substrate suppressing cracking of an SiC monocrystalline ingot when cutting the SiC monocrystalline ingot.SOLUTION: The method includes the step of preparing the silicon carbide monocrystalline ingot 1 having a side surface, the step of covering at least the side surface of the silicon carbide monocrystalline ingot 1 with a resin 3, the step of cutting the silicon carbide monocrystalline ingot 1 to form a plurality of silicon carbide monocrystalline substrates 4 by pressing the side surface of the silicon nitride monocrystalline ingot 1 against a wire while cutting the resin 3 by pressing the resin 3 against the wire by using the stretched wire in a state that the wire is traveled.
摘要翻译：要解决的问题：提供一种在切割SiC单晶锭时抑制SiC单晶锭的破裂的SiC单晶衬底的制造方法。解决方案：该方法包括制备具有侧表面的碳化硅单晶锭1的步骤，用树脂3至少覆盖碳化硅单晶锭1的侧面的步骤，通过将氮化硅单晶的侧面按压来切割碳化硅单晶锭1以形成多个碳化硅单晶基板4的步骤锭子1相对于线材切割，同时通过在导线行进的状态下使用拉伸丝来将树脂3压靠在线材上来切割树脂3。

27. 发明专利

JP2011207691A Apparatus and method for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：JP2011207691A
公开(公告)日：2011-10-20
申请号：JP2010078222
申请日：2010-03-30
申请人： Denso Corp , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー
发明人： KONDO HIROYUKI , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for producing a silicon carbide single crystal, by which the growth of an SiC single crystal of different polymorphism is prevented and a high quality SiC single crystal is produced when the SiC single crystal is grown by using a seed crystal composed of an SiC single crystal of an ON-substrate in which the off-angle is almost zero, e.g., 0.5° or less.SOLUTION: A cavity part 3a is provided in a pedestal 3 where a seed crystal 4 is to be arranged so that the heat dissipation property in the cavity part 3a becomes higher than those of other parts of the pedestal 3. Then, a part on the seed crystal 4 side of the cavity part 3a is formed so as to be fitted within a circle having a diameter of 1-5 mm. Thereby, only one growth nucleus is formed on the surface of the seed crystal 4, and an SiC single crystal grows while enlarging from the growth nucleus. Consequently, although micropipe defects and spiral dislocations are generated in a part above the part serving as the growth nucleus initially formed, that is to say, a part where a facet is formed, it becomes possible to prevent the occurrence of basal plane dislocations and stacking faults and the occurrence of different polymorphism is prevented in the area other than the part.
摘要翻译：要解决的问题：提供一种用于制造碳化硅单晶的装置和方法，通过该装置和方法，当SiC单晶生长时，通过其抑制不同多晶型的SiC单晶的生长并产生高质量的SiC单晶使用由脱离角几乎为零的ON-衬底的SiC单晶构成的晶种，例如0.5°或更小。解决方案：在基座3中设置空腔部分3a，其中籽晶4是以使得空腔部3a中的散热特性变得比基座3的其它部分的散热性高。然后，形成空腔部3a的晶种4侧的部分，使其嵌入到圆直径为1-5毫米。由此，在籽晶4的表面仅形成一个生长核，在从生长核扩大的同时，SiC单晶生长。因此，虽然在起初形成的生长核的部分以上的部分产生微细管缺陷和螺旋位错，也就是说，形成小面的部分，可以防止基面位错和堆叠的发生在该部分以外的区域防止了不同多态性的发生。

28. 发明专利

JP2014058446A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2014058446A
公开(公告)日：2014-04-03
申请号：JP2013247715
申请日：2013-11-29
申请人： Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： KONDO HIROYUKI , TAKAHANE HIDETAKA , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal that enables a stable growth of the SiC single crystal on growing the SiC single crystal using a producing apparatus with a heat insulator disposed around a crucible.SOLUTION: A Si absorbing step is performed by providing a vessel body 2a in which an Si containing material 21 is charged and a lid 2b as a crucible 2, disposing a heat insulator 20 of graphite without Si absorbed at the circumference of the crucible 2 so that it surrounds the circumference of the crucible 2, heating the Si containing material 21 by heating the crucible 2 to make the heat insulator 20 absorb a sublimation gas leaked from the crucible 2. Then, a growing step for growing the SiC single crystal on a seed crystal is performed by providing a crucible in which a powdery raw material is charged in the vessel body 2a and the seed crystal is disposed on a pedestal 3 formed on the lid 2b as the crucible 2, and heating the crucible 2 with the Si absorbed heat insulator 20 obtained by the Si absorbing step disposed at the circumference of the crucible 2 so that it surrounds the circumference of the crucible 2.
摘要翻译：要解决的问题：提供一种制造SiC单晶的方法，其使用具有设置在坩埚周围的隔热材料的制造装置生长SiC单晶时能够稳定地生长SiC单晶。解决方案：Si吸收步骤通过提供其中装载有Si的材料21的容器主体2a和作为坩埚2的盖2b来进行，在坩埚2的周围设置没有Si的石墨的绝热体20，以使其围绕圆周坩埚2通过加热坩埚2来加热含Si材料21，以使绝热体20吸收从坩埚2泄漏的升华气体。然后，通过提供在晶种上生长SiC单晶的生长步骤其中将粉末状原料装入容器主体2a并将晶种设置在作为坩埚2的形成在盖2b上的基座3上的坩埚，并且用坩埚2加热坩埚2 e Si吸收通过设置在坩埚2的圆周处的Si吸收步骤获得的绝热体20，使得其围绕坩埚2的周围。

29. 发明专利

JP2011213563A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2011213563A
公开(公告)日：2011-10-27
申请号：JP2010086032
申请日：2010-04-02
申请人： Denso Corp , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー
发明人： KONDO HIROYUKI , TAKAHANE HIDETAKA , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing SiC single crystals, which method enables stable growth of the SiC single crystals when growing the SiC single crystals by using an apparatus for producing wherein a heat insulating material is arranged around a crucible.SOLUTION: In the method for producing the SiC single crystals, an Si inclusion is allocated as a crucible 2 in a container body 2a and a cover body 2b is prepared; a heat insulation material made of black lead and not having absorbed Si is allocated at the outer circumference of the crucible 2 so as to surround the outer circumference of the crucible 2; and by heating the crucible 2, the Si inclusion is heated to cause a sublimated gas leaked from the crucible 2 to be adsorbed by a heat insulating material, thus causing Si to be adsorbed. Then, a powder raw material 5 is allocated in the container body 2a as the crucible 2 and the crucible 2 wherein seed crystals 4 are allocated on a pedestal 3 established on the cover body 2b is prepared; and in such a state that a heat insulating material 11 obtained by the Si-adsorbing process and having adsorbed Si is arranged in the outer circumference of the crucible 2 so as to embrace the outer circumference of the crucible 2, the crucible 2 is heated to vegetate SiC single crystals 6 on the seed crystals 4.
摘要翻译：要解决的问题：为了提供一种SiC单晶的制造方法，该方法能够通过使用绝热材料配置在坩埚周围的制造装置来生长SiC单晶时，可以稳定地生长SiC单晶。解决方案：在SiC单晶的制造方法中，将Si夹杂物作为坩埚2分配在容器主体2a中，制作盖体2b; 在坩埚2的外周配置由黑色铅构成的不具有吸收Si的绝热材料，以包围坩埚2的外周; 并且通过加热坩埚2，加热Si夹杂物，引起从坩埚2泄漏的升华气体被绝热材料吸附，从而使Si被吸附。然后，制作作为坩埚2的容器主体2a中的粉末原料5，并且准备在形成在盖体2b上的基座3上分配晶种4的坩埚2。并且在将坩埚2的外周配置为包围坩埚2的外周的状态下，将通过Si吸附法得到的吸附有Si的绝热材料11配置在坩埚2的外周，将坩埚2加热至种子晶体上植物SiC单晶6。

30. 发明专利

JP2011233780A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011233780A
公开(公告)日：2011-11-17
申请号：JP2010104148
申请日：2010-04-28
申请人： Kwansei Gakuin Univ , Toyota Motor Corp , トヨタ自動車株式会社 , 学校法人関西学院
发明人： KANEKO TADAAKI , OTANI NOBORU , MATSUDA KAZUHIRO , USHIO MASASHI , ADACHI AYUMI
IPC分类号： H01L21/265
CPC分类号： H01L21/3247 , H01L21/046
摘要： PROBLEM TO BE SOLVED: To provide an efficient manufacturing method that can realize a semiconductor device having flatness and sufficient electrical activity, in a method of manufacturing a semiconductor device using a substrate at least whose surface is configured by an SiC layer.SOLUTION: A method of manufacturing a semiconductor device includes an ion implantation step, a carbon layer formation step, an ion activation step, and a carbon layer removal step. In the ion implantation step, ion is implanted to the substrate. In the carbon layer formation step, a carbon layer is formed on the substrate surface to which the ion is implanted by the ion implantation step. In the ion activation step, the substrate on which the carbon layer is formed is heated to activate the ion. In the carbon layer removal step, the substrate to which the ion activation step is performed is heated at a temperature of 1500°C or more and 2300°C or less under an Si vapor pressure to remove the carbon layer.
摘要翻译：要解决的问题：提供一种能够实现具有平坦度和足够的电活动性的半导体器件的有效的制造方法，在使用至少其表面由SiC层构成的衬底的半导体器件的制造方法中。解决方案：制造半导体器件的方法包括离子注入步骤，碳层形成步骤，离子活化步骤和碳层去除步骤。在离子注入步骤中，将离子注入衬底。在碳层形成工序中，通过离子注入工序在离子注入的基板表面上形成碳层。在离子活化步骤中，加热形成有碳层的基板以活化离子。在碳层除去工序中，将进行了离子活化工序的基板在Si蒸汽压下在1500℃以上且2300℃以下的温度下加热以除去碳层。版权所有（C）2012，JPO＆INPIT

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