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21. 发明授权

US5831293A Semiconductor thyristor switching device and power converter using same 失效
标题翻译：半导体晶闸管开关器件和功率转换器使用相同
公开(公告)号：US5831293A
公开(公告)日：1998-11-03
申请号：US709451
申请日：1996-09-06
申请人： Tetsuo Mizoguchi , Masahiro Nagasu , Hideo Kobayashi , Tsutomu Yatsuo
发明人： Tetsuo Mizoguchi , Masahiro Nagasu , Hideo Kobayashi , Tsutomu Yatsuo
IPC分类号： H01L29/744 , H01L29/74 , H01L31/111
CPC分类号： H01L29/744
摘要： There is provided a semiconductor substrate which includes a pair of main surfaces, a first semiconductor layer of a first conductivity type adjacent to one of the main surface, a second semiconductor layer of a second conducting type of which impurity concentration is lower than that of the first semiconductor layer and which is adjacent to the first semiconductivity, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor, and a fourth semiconductor of the second conductivity type of which impurity concentration is higher than that of the third semiconductor and which is adjacent to the other of the main surfaces and the third semiconductor. The device further includes one main electrode in ohmic-contact with the first semiconductor layer on one of the main surfaces of said semiconductor substrate, the other main electrode in ohmic-contact with the first semiconductor layer on the other of the main surfaces of said semiconductor substrate, and a control electrode connected electrically to the third semiconductor layer. The total amount of impurities of said third semiconductor layer is less than 10.sup.14 cm.sup.-2.
摘要翻译：提供了一种半导体衬底，其包括一对主表面，与主表面之一相邻的第一导电类型的第一半导体层，杂质浓度低于第二导电类型的第二导电类型的第二半导体层第一半导体层，其与第一半导体层相邻，第一导电类型与第二半导体相邻的第三半导体层以及杂质浓度高于第三半导体的第二导电类型的第四半导体，与另一个主表面和第三半导体相邻。所述器件还包括与所述半导体衬底的一个主表面上的第一半导体层欧姆接触的一个主电极，与所述半导体衬底的另一主表面上的第一半导体层欧姆接触的另一个主电极基板和与第三半导体层电连接的控制电极。所述第三半导体层的杂质总量小于1014cm-2。

22. 发明授权

US5736753A Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide 失效
标题翻译：用于改进功率转换的半导体器件具有六方晶系单晶碳化硅
公开(公告)号：US5736753A
公开(公告)日：1998-04-07
申请号：US521548
申请日：1995-08-30
申请人： Toshiyuki Ohno , Yohsuke Inoue , Daisuke Kawase , Yuzo Kozono , Takaya Suzuki , Tsutomu Yatsuo
发明人： Toshiyuki Ohno , Yohsuke Inoue , Daisuke Kawase , Yuzo Kozono , Takaya Suzuki , Tsutomu Yatsuo
IPC分类号： H01L21/04 , H01L29/24 , H01L29/78 , H01L29/808 , H01L31/0312 , H01L29/74 , H01L29/861
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/66068 , H01L29/7801 , H01L29/7813 , H01L29/8083
摘要： To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. �Selected Drawing!FIG. 1
摘要翻译：为了提供具有大的功率转换能力的场效应晶体管及其制造方法，当半导体器件的栅极电压被关断时，通过减小由六方晶系碳化硅制成的半导体器件的源极和漏极之间的漏电流并且当半导体器件的栅极电压导通时也降低半导体器件的电阻。形成场效应晶体管的主电流路径，使得在例如场效应晶体管的源极和漏极之间流动的电流沿与{0001}平面平行的方向流动，沟道形成面为与{1120}平面平行。 [所选图]

23. 发明授权

US5324967A Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same 失效
标题翻译：关闭型半导体器件及其制造方法以及采用该半导体器件的电力转换装置
公开(公告)号：US5324967A
公开(公告)日：1994-06-28
申请号：US742833
申请日：1991-08-08
申请人： Hideo Honma , Yukimasa Satou , Susumu Murakami , Tsutomu Yatsuo , Isamu Sanpei , Kenji Yagishita
发明人： Hideo Honma , Yukimasa Satou , Susumu Murakami , Tsutomu Yatsuo , Isamu Sanpei , Kenji Yagishita
IPC分类号： H01L21/28 , H01L29/423 , H01L29/45 , H01L29/74 , H01L29/744
CPC分类号： H01L29/42308 , H01L29/45 , H01L29/744
摘要： In a turn off type semiconductor device, an n-type emitter layer is divided into a plurality of elements by trenches. A silicide layer of a high melting point metal is provided on a p-type layer adjacent to the individual elements of the n-type emitter layer on a bottom of each of the trenches. A gate electrode is provided on the associated silicide layer so as to surround the plurality of elements of the n-type emitter layer obtained by the division of the emitter layer. An insulator is filled in each of the trenches dividing the n-type emitter layer surrounded by the gate electrode. A cathode electrode is provided on both the insulators and the n-type emitter layer.
摘要翻译：在关断型半导体器件中，n型发射极层通过沟槽被分成多个元件。在每个沟槽的底部上与n型发射极层的各个元件相邻的p型层上设置高熔点金属的硅化物层。在相关联的硅化物层上设置栅电极，以便围绕由发射极层划分得到的n型发射极层的多个元件。在由栅电极包围的n型发射极层划分的每个沟槽中填充绝缘体。在绝缘体和n型发射极层上设置阴极电极。

24. 发明授权

US4651189A Semiconductor device provided with electrically floating control electrode 失效
标题翻译：具有电浮动控制电极的半导体装置
公开(公告)号：US4651189A
公开(公告)日：1987-03-17
申请号：US680837
申请日：1984-12-12
申请人： Tsutomu Yatsuo , Takahiro Nagano , Saburo Oikawa , Yukimasa Sato , Shin Kimura , Hiroshi Fukui
发明人： Tsutomu Yatsuo , Takahiro Nagano , Saburo Oikawa , Yukimasa Sato , Shin Kimura , Hiroshi Fukui
IPC分类号： H01L29/08 , H01L29/10 , H01L29/167 , H01L29/32 , H01L29/423 , H01L29/744 , H01L29/74
CPC分类号： H01L29/744 , H01L29/0804 , H01L29/0834 , H01L29/0839 , H01L29/1004 , H01L29/102 , H01L29/167 , H01L29/32 , H01L29/42304 , H01L29/42308
摘要： A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region with a constant width, a second one of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode kept in ohmic contact with the second semiconductor layer on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal; a second control electrode kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance of the second semiconductor layer between the first control electrode and the second control electrode; a second main electrode kept in ohmic contact with a second principal surface of the semiconductor substrate; and means provided in the semiconductor substrate for accelerating the spatial biasing of a conductive region to the other side of the strip-shaped region in the direction of the width thereof when a current flowing across the semiconductor substrate is cut off, thereby enlarging the area of safety operation.
摘要翻译：公开了一种栅极截止晶闸管和晶体管，每个晶体管包括：半导体衬底，其在一对主表面之间包括至少三个半导体层，相邻的半导体层之间的导电类型彼此不同，第一一个半导体层由至少一个具有恒定宽度的条形区域形成，第二个半导体层与条形区域一起暴露于半导体衬底的第一主表面; 第一主电极与第一主表面处的带状区域欧姆接触; 第一控制电极在带状区域的宽度方向上与第二半导体层保持欧姆接触，并直接连接到控制端子; 第二控制电极在带状区域的另一侧沿其宽度方向与第二半导体层欧姆接触，并且通过第一控制电极连接到控制端子，并且第二控制电极与第二半导体层之间的电阻所述第一控制电极和所述第二控制电极; 与所述半导体衬底的第二主表面保持欧姆接触的第二主电极; 以及设置在半导体衬底中的装置，用于当切断流过半导体衬底的电流时，在导电区域的宽度方向上将导电区域的空间偏置加速到带状区域的另一侧，从而扩大安全运行。

25. 发明授权

US4646122A Semiconductor device with floating remote gate turn-off means 失效
标题翻译：半导体器件具有浮动远程门极关闭手段
公开(公告)号：US4646122A
公开(公告)日：1987-02-24
申请号：US585606
申请日：1984-03-02
申请人： Shin Kimura , Hiroshi Fukui , Hisao Amano , Tsutomu Yatsuo , Saburo Oikawa , Takahiro Nagano
发明人： Shin Kimura , Hiroshi Fukui , Hisao Amano , Tsutomu Yatsuo , Saburo Oikawa , Takahiro Nagano
IPC分类号： H01L29/423 , H01L29/74
CPC分类号： H01L29/42304 , H01L29/42308
摘要： A semiconductor device such as a transistor or gate turn-off thyristor provided with a control electrode for improving the current cut-off performance, is disclosed in which an emitter layer of a semiconductor substrate is formed of a plurality of strip-shaped regions, a base layer adjacent to the strip-shaped regions is exposed to one principal surface of the semiconductor substrate together with the strip-shaped regions, one main electrode is provided on each strip-shaped region, first and second control electrodes are provided on the base layer, on one and the other sides of each strip-shaped region viewed in the direction of the width thereof, respectively, the other main electrode is provided on the second principal surface of the semiconductor substrate, and a gate terminal is not connected to the first control electrode but connected to the second control electrode, in order to draw out carriers unequally by the first and second control electrodes at a turn-off period. At the initial stage of turn-off action, carriers are drawn out mainly by the second control terminal, and a conductive region contracts so as to be limited to the first control electrode side. At the final stage of turn-off action, carriers are drawn out considerably by the first control electrode, to complete the turn-off action.
摘要翻译：公开了一种半导体器件，例如晶体管或栅极截止晶闸管，其设置有用于提高电流截止性能的控制电极，其中半导体衬底的发射极层由多个条形区域形成，与带状区域相邻的基底层与条状区域一起暴露于半导体衬底的一个主表面，在每个条形区域上设置一个主电极，在基底层上设置第一和第二控制电极在从宽度方向观察的每个条形区域的一侧和另一侧上分别设置在该半导体衬底的第二主表面上，另一个主电极没有连接到第一控制电极，但是连接到第二控制电极，以便在关断周期期间由第一和第二控制电极不相等地引出载流子。在关断动作的初始阶段，主要由第二控制端子引出载体，并且导电区域收缩以限于第一控制电极侧。在关断动作的最后阶段，载体被第一控制电极显着地拉出，以完成关断动作。

26. 发明授权

US4388635A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US4388635A
公开(公告)日：1983-06-14
申请号：US164946
申请日：1980-07-01
申请人： Atsuo Watanabe , Masayoshi Naito , Tsutomu Yatsuo , Masahiro Okamura
发明人： Atsuo Watanabe , Masayoshi Naito , Tsutomu Yatsuo , Masahiro Okamura
IPC分类号： H01L29/06 , H01L29/40 , H01L29/74
CPC分类号： H01L29/408 , H01L29/0638 , H01L29/0661
摘要： A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.
摘要翻译：高击穿电压半导体器件的新颖结构具有一对主表面，其上形成有一对主电极，并且在一对主表面之间形成有PN结被暴露的侧表面覆盖的PN结钝化材料。提供了一种导电构件的辅助电极，其设置在半导体衬底的主表面的外围边缘的外侧，并与钝化材料接触并与主电极电连接。当在一对主电极之间施加用于反向偏置PN结的电压时，通过在钝化材料中建立的电场来收集钝化材料中的离子，从而防止半导体衬底的表面上的击穿劣化。

27. 发明授权

US4240091A Semiconductor controlled rectifier device with small area dV/dt self-protecting means 失效
标题翻译：具有小面积dV / dt自保护装置的半导体可控整流器件
公开(公告)号：US4240091A
公开(公告)日：1980-12-16
申请号：US68571
申请日：1979-08-22
申请人： Tsutomu Yatsuo , Atsuo Watanabe , Yoshiteru Shimizu
发明人： Tsutomu Yatsuo , Atsuo Watanabe , Yoshiteru Shimizu
IPC分类号： H01L29/74
CPC分类号： H01L29/7424 , H01L29/7428
摘要： A main thyristor region is formed which comprises four continuous layers of alternately different conductivities consisting of first, second, third and fourth layers, PNPN for example. The main thyristor region constitutes a main thyristor section together with a couple of main electrodes in ohmic contact with the outside ones of the four layers. A pilot thyristor section and an auxiliary pilot thyristor section are constituted by employing the first, second and third layers of the main thyristor section and the main electrode in ohmic contact with the outside of the first layer and further by introducing fifth and sixth layers for forming PH junctions with the third layer. Further, there are provided a gate means for turning on the pilot thyristor section and an auxiliary gate means being in contact with the fifth or sixth layer. The auxiliary pilot thyristor section, main thyristor section and pilot thyristor section are formed in such a way that the respective triggering voltages satisfy the following relation:.vertline.dV/dt.vertline.aux
摘要翻译：形成主晶闸管区域，其包括由例如PNPN组成的由第一层，第二层，第三层和第四层构成的交替不同导电性的四个连续层。主晶闸管区域与与四层中的外层电阻欧姆接触的一对主电极构成主晶闸管部分。通过使用主晶闸管部分的第一层，第二层和第三层与主电极与第一层的外部欧姆接触并进一步通过引入第五层和第六层来形成导引晶闸管部分和辅助导频晶闸管部分 PH结点与第三层。此外，提供了用于导通导频晶闸管部分的栅极装置和与第五或第六层接触的辅助栅极装置。辅助导频晶闸管部分，主晶闸管部分和导频晶闸管部分形成为使得各个触发电压满足以下关系：| dV / dt|aux <| dV / dt | main，| dV / dt | pil 形成在辅助先导晶闸管部分和第三层之间的PN结的整个外围区域被辅助导频晶闸管部分的栅极装置完全短路。

28. 发明授权

US4100562A Light coupled semiconductor device and method of manufacturing the same 失效
标题翻译：光耦合半导体器件及其制造方法
公开(公告)号：US4100562A
公开(公告)日：1978-07-11
申请号：US678171
申请日：1976-04-19
申请人： Yoshitaka Sugawara , Tsutomu Yatsuo , Nobutake Konishi
发明人： Yoshitaka Sugawara , Tsutomu Yatsuo , Nobutake Konishi
IPC分类号： H01L31/111 , G02B6/42 , H01L31/12 , H01L31/167
CPC分类号： G02B6/4295 , G02B6/4212 , G02B6/4248 , H01L31/167 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2924/1301
摘要： A light emitting semiconductor device and a light detecting semiconductor device are coupled optically with each other through a light guide. The light guide is made of a single piece of light transmissible insulating material and at least its end portion associated with the semiconductor light detector is brought into wet contact with a light sensing region of the semiconductor light detector including its neighboring area. While being in fluid state, the light transmissible insulator held in wet contact with the semiconductor light emitter and detector is shaped into a predetermined configuration and thereafter hardened to form the light guide.
摘要翻译：发光半导体器件和光检测半导体器件通过光导彼此光学耦合。光导由单片透光绝缘材料制成，并且至少其与半导体光检测器相关联的端部与包括其相邻区域的半导体光检测器的光感测区域湿式接触。在处于流体状态时，保持与半导体光发射器和检测器湿接触的透光性绝缘体成形为预定构造，然后硬化以形成光导。

29. 发明申请

US20050006649A1 Static induction transistor, method of manufacturing same and electric power conversion apparatus 审中-公开
标题翻译：静电感应晶体管，制造方法和电力转换装置
公开(公告)号：US20050006649A1
公开(公告)日：2005-01-13
申请号：US10824442
申请日：2004-04-15
申请人： Takayuki Iwasaki , Tsutomu Yatsuo , Hidekatsu Onose , Toshiyuki Oono
发明人： Takayuki Iwasaki , Tsutomu Yatsuo , Hidekatsu Onose , Toshiyuki Oono
IPC分类号： H01L29/772 , H02M7/00 , H01L31/0312
CPC分类号： H02M7/003 , H01L29/7722
摘要： A static induction transistor includes a semiconductor substrate with an energy band gap greater than that of silicon, and the semiconductor substrate has a first gate region to which a gate electrode is connected; and a second gate region positioned within a first semiconductor region which becomes a drain region, and the first gate region is in contact with a second semiconductor region which becomes a source region. According to this construction, the OFF characteristics of the static induction transistor are improved.
摘要翻译：静电感应晶体管包括具有比硅的能带隙大的能带隙的半导体衬底，并且半导体衬底具有连接有栅电极的第一栅极区域; 以及位于成为漏极区域的第一半导体区域内的第二栅极区域，并且第一栅极区域与成为源极区域的第二半导体区域接触。根据该结构，能够提高静电感应晶体管的OFF特性。

30. 发明授权

US06353236B1 Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same 失效
标题翻译：半导体浪涌吸收器，电子电器设备和使用其的功率模块
公开(公告)号：US06353236B1
公开(公告)日：2002-03-05
申请号：US09396733
申请日：1999-09-15
申请人： Tsutomu Yatsuo , Takayuki Iwasaki , Hidekatsu Onose , Shin Kimura
发明人： Tsutomu Yatsuo , Takayuki Iwasaki , Hidekatsu Onose , Shin Kimura
IPC分类号： H01L310312
CPC分类号： H01C7/10 , H01C7/12 , H01L29/8605 , H01L2224/49111 , H01L2224/49113 , H01L2224/49431
摘要： A wide bandgap semiconductor single crystal is applied as a semiconductor substrate material of a semiconductor surge absorber, and a surge absorption operation starting voltage is set by a punchthrough of a pn junction, to obtain a semiconductor surge absorber with a repetitive operation and a high surge endurance.
摘要翻译：应用宽带隙半导体单晶作为半导体浪涌吸收体的半导体衬底材料，通过pn结穿透来设置浪涌吸收操作启动电压，以获得具有重复操作和高浪涌的半导体浪涌吸收器耐力。

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